SM8S33CAJ WeEn Semiconductors


SM8S_ser.pdf Виробник: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 124A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
кількість в упаковці: 1 шт
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Технічний опис SM8S33CAJ WeEn Semiconductors

Category: Bidirectional SMD transil diodes, Description: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; bidirectional; DO218J; SM8S, Type of diode: TVS, Peak pulse power dissipation: 6.6kW, Max. off-state voltage: 33V, Breakdown voltage: 36.7...40.6V, Max. forward impulse current: 124A, Semiconductor structure: bidirectional, Case: DO218J, Mounting: SMD, Leakage current: 5µA, Kind of package: reel; tape, Manufacturer series: SM8S, кількість в упаковці: 1 шт.

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SM8S33CAJ Виробник : WeEn Semiconductors SM8S_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.6kW; 36.7÷40.6V; 124A; bidirectional; DO218J; SM8S
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 124A
Semiconductor structure: bidirectional
Case: DO218J
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: SM8S
товар відсутній