| Фото | Назва | Виробник | Інформація |
Доступність |
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VS-40HFR10 | VISHAY |
 Category: Stud mounting universal diodesDescription: Diode: rectifying; 100V; 1.3V; 40A; anode to stud; DO203AB,DO5 Type of diode: rectifying Semiconductor structure: anode to stud Max. off-state voltage: 100V Load current: 40A Case: DO5; DO203AB Max. forward voltage: 1.3V Max. forward impulse current: 570A Mounting: screw type Max. load current: 62A Kind of package: bulk Manufacturer series: VS-4xHF(R) Fastening thread: 1/4"-28UNF-2A |
на замовлення 226 шт: термін постачання 21-30 дні (днів) |
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VS-40HFR20 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 200V; 40A; anode to stud; DO203AB,DO5; 1.3V Type of diode: rectifying Max. off-state voltage: 200V Load current: 40A Semiconductor structure: anode to stud Case: DO5; DO203AB Fastening thread: 1/4"-28UNF-2A Mounting: screw type Max. forward voltage: 1.3V Max. load current: 62A Max. forward impulse current: 570A Manufacturer series: VS-4xHF(R) Kind of package: bulk |
на замовлення 99 шт: термін постачання 21-30 дні (днів) |
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VS-40HF120 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1.2kV; 40A; cathode to stud; DO203AB,DO5; 1.3V Type of diode: rectifying Semiconductor structure: cathode to stud Max. off-state voltage: 1.2kV Load current: 40A Case: DO5; DO203AB Max. forward voltage: 1.3V Max. forward impulse current: 570A Mounting: screw type Max. load current: 62A Kind of package: bulk Manufacturer series: VS-4xHF(R) Fastening thread: 1/4"-28UNF-2A |
на замовлення 99 шт: термін постачання 21-30 дні (днів) |
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| VS-40HFR100 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1kV; 1.3V; 40A; anode to stud; DO203AB,DO5; bulk Type of diode: rectifying Semiconductor structure: anode to stud Max. off-state voltage: 1kV Load current: 40A Case: DO5; DO203AB Max. forward voltage: 1.3V Max. forward impulse current: 570A Mounting: screw type Max. load current: 62A Kind of package: bulk Manufacturer series: VS-4xHF(R) Fastening thread: 1/4"-28UNF-2A |
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| VS-40HFR80 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 800V; 1.3V; 40A; anode to stud; DO203AB,DO5 Type of diode: rectifying Semiconductor structure: anode to stud Max. off-state voltage: 0.8kV Load current: 40A Case: DO5; DO203AB Max. forward voltage: 1.3V Max. forward impulse current: 570A Mounting: screw type Max. load current: 62A Kind of package: bulk Manufacturer series: VS-4xHF(R) Fastening thread: 1/4"-28UNF-2A |
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TZMB47-GS08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 47V; SMD; reel,tape; MiniMELF,SOD80 Type of diode: Zener Power dissipation: 0.5W Zener voltage: 47V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: MiniMELF; SOD80 Semiconductor structure: single diode |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
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GRC00AA3R31HTFL | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 3.3uF; 50VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 3.3µF Operating voltage: 50V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 5x11mm |
на замовлення 930 шт: термін постачання 21-30 дні (днів) |
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GRC00AA3R31HTNL | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 3.3uF; 50VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 3.3µF Operating voltage: 50V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 5x11mm |
на замовлення 1100 шт: термін постачання 21-30 дні (днів) |
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GSC00AB3R31HARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 3.3uF; 50VDC; ±20%; -55÷105°C; 2000h Mounting: SMD Tolerance: ±20% Operating temperature: -55...105°C Operating voltage: 50V DC Height: 5.7mm Dimensions: 4x5.7mm Capacitors series: GSC Nominal life: 2000h Capacitance: 3.3µF Type of capacitor: electrolytic |
на замовлення 1420 шт: термін постачання 21-30 дні (днів) |
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RCA040247K0FKED | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0402; 47kΩ; 63mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Case - inch: 0402 Case - mm: 1005 Resistance: 47kΩ Power: 63mW Tolerance: ±1% Max. operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC Q200 |
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| SI7772DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 35.6A Type of transistor: N-MOSFET + Schottky Mounting: SMD Case: PowerPAK® SO8 On-state resistance: 16.5mΩ Kind of package: reel; tape Technology: TrenchFET® Power dissipation: 29.8W Polarisation: unipolar Pulsed drain current: 50A Gate charge: 28nC Drain current: 35.6A Kind of channel: enhanced Drain-source voltage: 30V Gate-source voltage: ±20V |
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| TSOP94256 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 56kHz; 2÷3.6V; 45° Mounting: THT Supply voltage: 2...3.6V Frequency: 56kHz Viewing angle: 45° Type of photoelement: integrated IR receiver |
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| TSOP98256 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 56kHz; 2÷3.6V; 45° Type of photoelement: integrated IR receiver Frequency: 56kHz Mounting: THT Viewing angle: 45° Supply voltage: 2...3.6V |
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| TSFF6210 | VISHAY |
Category: IR LEDs Description: IR transmitter; 5mm; T-1 3/4; 870nm; transparent; 50mW; 10°; THT LED diameter: 5mm LED lens: transparent Case: T-1 3/4 Type of diode: IR transmitter Operating voltage: 1.5...1.8V LED current: 100mA Optical power: 50mW Mounting: THT Wavelength: 870nm Viewing angle: 10° |
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CRCW12064K53FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 4.53kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 4.53kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
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VS-8EWF10S-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 8A; 80ns; DPAK; Ufmax: 1.3V; Ifsm: 150A Mounting: SMD Semiconductor structure: single diode Reverse recovery time: 80ns Max. forward impulse current: 150A Case: DPAK Type of diode: rectifying Features of semiconductor devices: fast switching; glass passivated Max. off-state voltage: 1kV Max. forward voltage: 1.3V Load current: 8A |
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VLMD3100-GS08 | VISHAY |
Category: SMD colour LEDs Description: LED; SMD; PLCC2; red; 22mcd; 3x2.8x1.75mm; 60°; 1.8÷2.2V; 30mA Type of diode: LED Mounting: SMD Case: PLCC2 LED colour: red Luminosity: 22mcd Dimensions: 3x2.8x1.75mm Viewing angle: 60° LED current: 30mA Wavelength: 648nm Front: flat Operating voltage: 1.8...2.2V |
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VLMD31L2N1-GS08 | VISHAY |
Category: SMD colour LEDs Description: LED; SMD; PLCC2; red; 14÷22(typ)-35.5mcd; 3x2.8x1.75mm; 60°; 30mA Type of diode: LED Mounting: SMD Case: PLCC2 LED colour: red Luminosity: 14...22(typ)-35.5mcd Dimensions: 3x2.8x1.75mm Viewing angle: 60° LED current: 30mA Wavelength: 648nm Front: flat Operating voltage: 1.8...2.2V |
на замовлення 584 шт: термін постачання 21-30 дні (днів) |
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| VLMD31L2N1-GS18 | VISHAY |
Category: SMD colour LEDs Description: LED; SMD; PLCC2; red; 14÷22(typ)-35.5mcd; 3x2.8x1.75mm; 60°; 30mA Type of diode: LED Mounting: SMD Case: PLCC2 LED colour: red Luminosity: 14...22(typ)-35.5mcd Dimensions: 3x2.8x1.75mm Viewing angle: 60° LED current: 30mA Wavelength: 648nm Front: flat Operating voltage: 1.8...2.2V |
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| VLMD31L2P1-GS08 | VISHAY |
Category: SMD colour LEDs Description: LED; SMD; PLCC2; red; 14÷22(typ)-56mcd; 3x2.8x1.75mm; 60°; 1.8÷2.2V Type of diode: LED Mounting: SMD Case: PLCC2 LED colour: red Luminosity: 14...22(typ)-56mcd Dimensions: 3x2.8x1.75mm Viewing angle: 60° LED current: 30mA Wavelength: 648nm Front: flat Operating voltage: 1.8...2.2V |
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RCA0805220KFHEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0805; 220kΩ; 125mW; ±1%; -55÷155°C; 50ppm/°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 220kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Conform to the norm: AEC Q200 |
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RCA080568R0JNEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0805; 68Ω; 125mW; ±5%; -55÷155°C; 200ppm/°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 68Ω Power: 0.125W Tolerance: ±5% Max. operating voltage: 150V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C Conform to the norm: AEC Q200 |
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CRCW25123M60FKEG | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 3.6MΩ; 1W; ±1%; -55÷155°C Mounting: SMD Operating temperature: -55...155°C Power: 1W Case - mm: 6332 Case - inch: 2512 Type of resistor: thick film Resistance: 3.6MΩ Tolerance: ±1% Temperature coefficient: 100ppm/°C Max. operating voltage: 500V |
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| SISS10DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A; 36W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 150A Power dissipation: 36W Case: PowerPAK® 1212-8 Gate-source voltage: -16...20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhanced |
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VJ1206A222KXCAT | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 2.2nF; 200V; C0G (NP0); ±10%; SMD; 1206 Operating temperature: -55...125°C Mounting: SMD Tolerance: ±10% Type of capacitor: ceramic Dielectric: C0G (NP0) Capacitance: 2.2nF Operating voltage: 200V Case - mm: 3216 Case - inch: 1206 |
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VJ0805Y153KXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 15nF; 50V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Capacitance: 15nF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
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| SIA432DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 12A Pulsed drain current: 30A Power dissipation: 19.2W Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
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| AC03000003901JAC00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 3.9kΩ; 3W; ±5%; Ø4.8x13mm; axial Type of resistor: wire-wound Mounting: THT Resistance: 3.9kΩ Power: 3W Tolerance: ±5% Body dimensions: Ø4.8x13mm Leads: axial Conform to the norm: AEC Q200 |
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| AC07000003901JAC00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 3.9kΩ; 7W; ±5%; Ø7.5x26mm; axial Type of resistor: wire-wound Mounting: THT Resistance: 3.9kΩ Tolerance: ±5% Power: 7W Body dimensions: Ø7.5x26mm Conform to the norm: AEC Q200 Leads: axial |
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RCA12063K90JNEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 1206; 3.9kΩ; 250mW; ±5%; -55÷155°C; 200ppm/°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 3.9kΩ Power: 0.25W Tolerance: ±5% Max. operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C Conform to the norm: AEC Q200 |
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| SIR466DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 54W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 70A Power dissipation: 54W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhanced |
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| SFH6136-X001 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; 1Mbps; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 19-35%@16mA Transfer rate: 1Mbps Case: DIP8 Conform to the norm: UL Turn-on time: 0.3µs Turn-off time: 0.3µs Max. off-state voltage: 3V Output voltage: -500mV...25V Manufacturer series: SFH6136 |
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| MAL205258479E3 | VISHAY |
Category: SNAP-IN electrolytic capacitors Description: Capacitor: electrolytic; SNAP-IN; 47uF; 385VDC; Ø25x30mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 47µF Operating voltage: 385V DC Body dimensions: Ø25x30mm Tolerance: ±20% Service life: 15000h Operating temperature: -40...85°C |
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| AC04000002201JAC00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 2.2kΩ; 4W; ±5%; Ø5.5x16.5mm; axial Resistance: 2.2kΩ Power: 4W Tolerance: ±5% Mounting: THT Leads: axial Body dimensions: Ø5.5x16.5mm Conform to the norm: AEC Q200 Type of resistor: wire-wound |
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| AC05000002201JAC00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 2.2kΩ; 5W; ±5%; Ø7.5x18mm; axial Resistance: 2.2kΩ Power: 5W Tolerance: ±5% Mounting: THT Leads: axial Body dimensions: Ø7.5x18mm Conform to the norm: AEC Q200 Type of resistor: wire-wound |
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| AC03000004701JAC00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 4.7kΩ; 3W; ±5%; Ø4.8x13mm; axial Resistance: 4.7kΩ Power: 3W Tolerance: ±5% Mounting: THT Body dimensions: Ø4.8x13mm Leads: axial Conform to the norm: AEC Q200 Type of resistor: wire-wound |
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SI2333CDS-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -7.1A; Idm: -20A Kind of package: reel; tape Power dissipation: 2.5W Polarisation: unipolar Gate charge: 25nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Mounting: SMD Case: SOT23 Drain-source voltage: -12V Drain current: -7.1A On-state resistance: 59mΩ Type of transistor: P-MOSFET |
на замовлення 2488 шт: термін постачання 21-30 дні (днів) |
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SI2333CDS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5.7A; Idm: -20A; 1.6W; SOT23 Kind of package: reel; tape Power dissipation: 1.6W Polarisation: unipolar Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Mounting: SMD Case: SOT23 Drain-source voltage: -12V Drain current: -5.7A On-state resistance: 35mΩ Type of transistor: P-MOSFET |
на замовлення 2604 шт: термін постачання 21-30 дні (днів) |
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SI2333DDS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5.2A; Idm: -20A; 1.1W; SOT23 Kind of package: reel; tape Power dissipation: 1.1W Polarisation: unipolar Gate charge: 35nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Mounting: SMD Case: SOT23 Drain-source voltage: -12V Drain current: -5.2A On-state resistance: 0.15Ω Type of transistor: P-MOSFET |
на замовлення 2560 шт: термін постачання 21-30 дні (днів) |
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SI2333DS-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -5.3A; Idm: -20A Kind of package: reel; tape Power dissipation: 1.25W Polarisation: unipolar Gate charge: 18nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Mounting: SMD Case: SOT23 Drain-source voltage: -12V Drain current: -5.3A On-state resistance: 59mΩ Type of transistor: P-MOSFET |
на замовлення 2925 шт: термін постачання 21-30 дні (днів) |
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| SI2333DS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -5.3A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.3A Pulsed drain current: -20A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 59mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI7108DN-T1-E3 | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 22A; Idm: 60A; 3.8W Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 22A On-state resistance: 6.1mΩ Type of transistor: N-MOSFET Power dissipation: 3.8W Polarisation: unipolar Gate charge: 30nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 60A |
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| SI7108DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 22A; Idm: 60A; 3.8W Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 22A On-state resistance: 6.1mΩ Type of transistor: N-MOSFET Power dissipation: 3.8W Polarisation: unipolar Gate charge: 30nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 60A |
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RCA1206220RJNEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 1206; 220Ω; 250mW; ±5%; -55÷155°C; 200ppm/°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 220Ω Power: 0.25W Tolerance: ±5% Max. operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C Conform to the norm: AEC Q200 |
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TSOP98638 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 38kHz; 2÷3.6V; 45° Viewing angle: 45° Type of photoelement: integrated IR receiver Mounting: THT Supply voltage: 2...3.6V Frequency: 38kHz |
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RCA04022K20FKED | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0402; 2.2kΩ; 63mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Case - inch: 0402 Case - mm: 1005 Resistance: 2.2kΩ Power: 63mW Tolerance: ±1% Max. operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC Q200 |
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| GSC00AP1012EARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 100uF; 250VDC; ±20%; -40÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 100µF Operating voltage: 250V DC Tolerance: ±20% Operating temperature: -40...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 18x21.5mm Height: 21.5mm |
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| MAL204313101E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 100uF; 250VDC; Ø21x38mm; ±-10.5% Type of capacitor: electrolytic Mounting: THT Capacitance: 100µF Operating voltage: 250V DC Body dimensions: Ø21x38mm Tolerance: ±-10.5% Operating temperature: -40...85°C |
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| SI4838BDY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 34A; Idm: 70A; 5.7W Polarisation: unipolar Kind of package: reel; tape Case: SO8 Gate charge: 84nC Technology: TrenchFET® Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±8V Pulsed drain current: 70A Type of transistor: N-MOSFET Power dissipation: 5.7W On-state resistance: 4mΩ Drain current: 34A Drain-source voltage: 12V |
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| SI4838DY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 25A; Idm: 60A; 3.5W Polarisation: unipolar Kind of package: reel; tape Case: SO8 Gate charge: 60nC Technology: TrenchFET® Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±8V Pulsed drain current: 60A Type of transistor: N-MOSFET Power dissipation: 3.5W On-state resistance: 4mΩ Drain current: 25A Drain-source voltage: 12V |
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GL41B-E3/96 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; DO213AB,MELF plastic; Ufmax: 1.1V Type of diode: rectifying Max. off-state voltage: 100V Max. forward impulse current: 30A Semiconductor structure: single diode Case: DO213AB; MELF plastic Mounting: SMD Leakage current: 50µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Capacitance: 8pF Load current: 1A Max. forward voltage: 1.1V |
на замовлення 900 шт: термін постачання 21-30 дні (днів) |
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| V30D60C-M3/I | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 15Ax2; SMPD; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 15A x2 Max. load current: 30A Semiconductor structure: common cathode; double Max. forward voltage: 0.57V Case: SMPD Kind of package: reel; tape Max. forward impulse current: 170A |
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| Si9933CDY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4A; Idm: -20A Mounting: SMD Drain-source voltage: -20V Drain current: -4A On-state resistance: 94mΩ Type of transistor: P-MOSFET x2 Power dissipation: 3.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 26nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -20A Case: SO8 |
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CRCW2512270RFKEG | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 270Ω; 1W; ±1%; -55÷155°C; 100ppm/°C Operating temperature: -55...155°C Case - mm: 6332 Case - inch: 2512 Mounting: SMD Type of resistor: thick film Power: 1W Resistance: 270Ω Tolerance: ±1% Temperature coefficient: 100ppm/°C Max. operating voltage: 500V |
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CRCW2512270RFKEGHP | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 270Ω; 1.5W; ±1%; -55÷155°C Operating temperature: -55...155°C Case - mm: 6332 Case - inch: 2512 Mounting: SMD Type of resistor: thick film Power: 1.5W Resistance: 270Ω Tolerance: ±1% Temperature coefficient: 100ppm/°C Max. operating voltage: 500V |
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CRCW2512270RFKTHBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 270Ω; 1W; ±1%; -55÷155°C; 100ppm/°C Operating temperature: -55...155°C Case - mm: 6332 Case - inch: 2512 Mounting: SMD Type of resistor: thick film Power: 1W Resistance: 270Ω Tolerance: ±1% Temperature coefficient: 100ppm/°C Max. operating voltage: 500V |
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CRCW2512270RJNEGHP | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 270Ω; 1.5W; ±5%; -55÷155°C Operating temperature: -55...155°C Case - mm: 6332 Case - inch: 2512 Mounting: SMD Type of resistor: thick film Power: 1.5W Resistance: 270Ω Tolerance: ±5% Temperature coefficient: 200ppm/°C Max. operating voltage: 500V |
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| AC05000002207JAC00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 220mΩ; 5W; ±5%; Ø7.5x18mm; axial Type of resistor: wire-wound Mounting: THT Resistance: 0.22Ω Power: 5W Tolerance: ±5% Body dimensions: Ø7.5x18mm Leads: axial Conform to the norm: AEC Q200 |
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| SIR4606DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 16A; Idm: 40A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 16A Pulsed drain current: 40A Power dissipation: 31.2W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 22.5mΩ Mounting: SMD Gate charge: 13.5nC Kind of package: reel; tape Kind of channel: enhanced |
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| AC05000003309JAC00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 33Ω; 5W; ±5%; Ø7.5x18mm; axial Type of resistor: wire-wound Mounting: THT Resistance: 33Ω Power: 5W Tolerance: ±5% Body dimensions: Ø7.5x18mm Leads: axial Conform to the norm: AEC Q200 |
товар відсутній |
| VS-40HFR10 |
|
Виробник: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 100V; 1.3V; 40A; anode to stud; DO203AB,DO5
Type of diode: rectifying
Semiconductor structure: anode to stud
Max. off-state voltage: 100V
Load current: 40A
Case: DO5; DO203AB
Max. forward voltage: 1.3V
Max. forward impulse current: 570A
Mounting: screw type
Max. load current: 62A
Kind of package: bulk
Manufacturer series: VS-4xHF(R)
Fastening thread: 1/4"-28UNF-2A
Category: Stud mounting universal diodes
Description: Diode: rectifying; 100V; 1.3V; 40A; anode to stud; DO203AB,DO5
Type of diode: rectifying
Semiconductor structure: anode to stud
Max. off-state voltage: 100V
Load current: 40A
Case: DO5; DO203AB
Max. forward voltage: 1.3V
Max. forward impulse current: 570A
Mounting: screw type
Max. load current: 62A
Kind of package: bulk
Manufacturer series: VS-4xHF(R)
Fastening thread: 1/4"-28UNF-2A
на замовлення 226 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 512.86 грн |
| 3+ | 329.06 грн |
| 8+ | 310.95 грн |
| VS-40HFR20 |
|
Виробник: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 200V; 40A; anode to stud; DO203AB,DO5; 1.3V
Type of diode: rectifying
Max. off-state voltage: 200V
Load current: 40A
Semiconductor structure: anode to stud
Case: DO5; DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward voltage: 1.3V
Max. load current: 62A
Max. forward impulse current: 570A
Manufacturer series: VS-4xHF(R)
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 200V; 40A; anode to stud; DO203AB,DO5; 1.3V
Type of diode: rectifying
Max. off-state voltage: 200V
Load current: 40A
Semiconductor structure: anode to stud
Case: DO5; DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward voltage: 1.3V
Max. load current: 62A
Max. forward impulse current: 570A
Manufacturer series: VS-4xHF(R)
Kind of package: bulk
на замовлення 99 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 460.84 грн |
| 3+ | 327.55 грн |
| 8+ | 310.19 грн |
| VS-40HF120 |
|
Виробник: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1.2kV; 40A; cathode to stud; DO203AB,DO5; 1.3V
Type of diode: rectifying
Semiconductor structure: cathode to stud
Max. off-state voltage: 1.2kV
Load current: 40A
Case: DO5; DO203AB
Max. forward voltage: 1.3V
Max. forward impulse current: 570A
Mounting: screw type
Max. load current: 62A
Kind of package: bulk
Manufacturer series: VS-4xHF(R)
Fastening thread: 1/4"-28UNF-2A
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1.2kV; 40A; cathode to stud; DO203AB,DO5; 1.3V
Type of diode: rectifying
Semiconductor structure: cathode to stud
Max. off-state voltage: 1.2kV
Load current: 40A
Case: DO5; DO203AB
Max. forward voltage: 1.3V
Max. forward impulse current: 570A
Mounting: screw type
Max. load current: 62A
Kind of package: bulk
Manufacturer series: VS-4xHF(R)
Fastening thread: 1/4"-28UNF-2A
на замовлення 99 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 628.28 грн |
| 3+ | 332.83 грн |
| 8+ | 314.72 грн |
| VS-40HFR100 |
|
Виробник: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.3V; 40A; anode to stud; DO203AB,DO5; bulk
Type of diode: rectifying
Semiconductor structure: anode to stud
Max. off-state voltage: 1kV
Load current: 40A
Case: DO5; DO203AB
Max. forward voltage: 1.3V
Max. forward impulse current: 570A
Mounting: screw type
Max. load current: 62A
Kind of package: bulk
Manufacturer series: VS-4xHF(R)
Fastening thread: 1/4"-28UNF-2A
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.3V; 40A; anode to stud; DO203AB,DO5; bulk
Type of diode: rectifying
Semiconductor structure: anode to stud
Max. off-state voltage: 1kV
Load current: 40A
Case: DO5; DO203AB
Max. forward voltage: 1.3V
Max. forward impulse current: 570A
Mounting: screw type
Max. load current: 62A
Kind of package: bulk
Manufacturer series: VS-4xHF(R)
Fastening thread: 1/4"-28UNF-2A
товар відсутній
| VS-40HFR80 |
|
Виробник: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 800V; 1.3V; 40A; anode to stud; DO203AB,DO5
Type of diode: rectifying
Semiconductor structure: anode to stud
Max. off-state voltage: 0.8kV
Load current: 40A
Case: DO5; DO203AB
Max. forward voltage: 1.3V
Max. forward impulse current: 570A
Mounting: screw type
Max. load current: 62A
Kind of package: bulk
Manufacturer series: VS-4xHF(R)
Fastening thread: 1/4"-28UNF-2A
Category: Stud mounting universal diodes
Description: Diode: rectifying; 800V; 1.3V; 40A; anode to stud; DO203AB,DO5
Type of diode: rectifying
Semiconductor structure: anode to stud
Max. off-state voltage: 0.8kV
Load current: 40A
Case: DO5; DO203AB
Max. forward voltage: 1.3V
Max. forward impulse current: 570A
Mounting: screw type
Max. load current: 62A
Kind of package: bulk
Manufacturer series: VS-4xHF(R)
Fastening thread: 1/4"-28UNF-2A
товар відсутній
| TZMB47-GS08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 47V; SMD; reel,tape; MiniMELF,SOD80
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF; SOD80
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 47V; SMD; reel,tape; MiniMELF,SOD80
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF; SOD80
Semiconductor structure: single diode
на замовлення 39 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 9.81 грн |
| GRC00AA3R31HTFL |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3.3uF; 50VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3µF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 5x11mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3.3uF; 50VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3µF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 5x11mm
на замовлення 930 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 7.09 грн |
| 90+ | 4.28 грн |
| 120+ | 3.29 грн |
| 500+ | 1.75 грн |
| GRC00AA3R31HTNL |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3.3uF; 50VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3µF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 5x11mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3.3uF; 50VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3µF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 5x11mm
на замовлення 1100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 7.09 грн |
| 90+ | 4.28 грн |
| 120+ | 3.29 грн |
| 500+ | 1.75 грн |
| GSC00AB3R31HARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 3.3uF; 50VDC; ±20%; -55÷105°C; 2000h
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...105°C
Operating voltage: 50V DC
Height: 5.7mm
Dimensions: 4x5.7mm
Capacitors series: GSC
Nominal life: 2000h
Capacitance: 3.3µF
Type of capacitor: electrolytic
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 3.3uF; 50VDC; ±20%; -55÷105°C; 2000h
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...105°C
Operating voltage: 50V DC
Height: 5.7mm
Dimensions: 4x5.7mm
Capacitors series: GSC
Nominal life: 2000h
Capacitance: 3.3µF
Type of capacitor: electrolytic
на замовлення 1420 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 8.05 грн |
| 100+ | 4.76 грн |
| 380+ | 2.36 грн |
| 1020+ | 2.23 грн |
| RCA040247K0FKED |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0402; 47kΩ; 63mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 47kΩ
Power: 63mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 0402; 47kΩ; 63mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 47kΩ
Power: 63mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
товар відсутній
| SI7772DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 35.6A
Type of transistor: N-MOSFET + Schottky
Mounting: SMD
Case: PowerPAK® SO8
On-state resistance: 16.5mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Power dissipation: 29.8W
Polarisation: unipolar
Pulsed drain current: 50A
Gate charge: 28nC
Drain current: 35.6A
Kind of channel: enhanced
Drain-source voltage: 30V
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 35.6A
Type of transistor: N-MOSFET + Schottky
Mounting: SMD
Case: PowerPAK® SO8
On-state resistance: 16.5mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Power dissipation: 29.8W
Polarisation: unipolar
Pulsed drain current: 50A
Gate charge: 28nC
Drain current: 35.6A
Kind of channel: enhanced
Drain-source voltage: 30V
Gate-source voltage: ±20V
товар відсутній
| TSOP94256 |
|
Виробник: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 56kHz; 2÷3.6V; 45°
Mounting: THT
Supply voltage: 2...3.6V
Frequency: 56kHz
Viewing angle: 45°
Type of photoelement: integrated IR receiver
Category: IR receiver modules
Description: Integrated IR receiver; 56kHz; 2÷3.6V; 45°
Mounting: THT
Supply voltage: 2...3.6V
Frequency: 56kHz
Viewing angle: 45°
Type of photoelement: integrated IR receiver
товар відсутній
| TSOP98256 |
|
Виробник: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 56kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 56kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
Category: IR receiver modules
Description: Integrated IR receiver; 56kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 56kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
товар відсутній
| TSFF6210 |
|
Виробник: VISHAY
Category: IR LEDs
Description: IR transmitter; 5mm; T-1 3/4; 870nm; transparent; 50mW; 10°; THT
LED diameter: 5mm
LED lens: transparent
Case: T-1 3/4
Type of diode: IR transmitter
Operating voltage: 1.5...1.8V
LED current: 100mA
Optical power: 50mW
Mounting: THT
Wavelength: 870nm
Viewing angle: 10°
Category: IR LEDs
Description: IR transmitter; 5mm; T-1 3/4; 870nm; transparent; 50mW; 10°; THT
LED diameter: 5mm
LED lens: transparent
Case: T-1 3/4
Type of diode: IR transmitter
Operating voltage: 1.5...1.8V
LED current: 100mA
Optical power: 50mW
Mounting: THT
Wavelength: 870nm
Viewing angle: 10°
товар відсутній
| CRCW12064K53FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.53kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 4.53kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.53kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 4.53kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
товар відсутній
| VS-8EWF10S-M3 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 8A; 80ns; DPAK; Ufmax: 1.3V; Ifsm: 150A
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 80ns
Max. forward impulse current: 150A
Case: DPAK
Type of diode: rectifying
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 1kV
Max. forward voltage: 1.3V
Load current: 8A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 8A; 80ns; DPAK; Ufmax: 1.3V; Ifsm: 150A
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 80ns
Max. forward impulse current: 150A
Case: DPAK
Type of diode: rectifying
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 1kV
Max. forward voltage: 1.3V
Load current: 8A
товар відсутній
| VLMD3100-GS08 |
|
Виробник: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; PLCC2; red; 22mcd; 3x2.8x1.75mm; 60°; 1.8÷2.2V; 30mA
Type of diode: LED
Mounting: SMD
Case: PLCC2
LED colour: red
Luminosity: 22mcd
Dimensions: 3x2.8x1.75mm
Viewing angle: 60°
LED current: 30mA
Wavelength: 648nm
Front: flat
Operating voltage: 1.8...2.2V
Category: SMD colour LEDs
Description: LED; SMD; PLCC2; red; 22mcd; 3x2.8x1.75mm; 60°; 1.8÷2.2V; 30mA
Type of diode: LED
Mounting: SMD
Case: PLCC2
LED colour: red
Luminosity: 22mcd
Dimensions: 3x2.8x1.75mm
Viewing angle: 60°
LED current: 30mA
Wavelength: 648nm
Front: flat
Operating voltage: 1.8...2.2V
товар відсутній
| VLMD31L2N1-GS08 |
|
Виробник: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; PLCC2; red; 14÷22(typ)-35.5mcd; 3x2.8x1.75mm; 60°; 30mA
Type of diode: LED
Mounting: SMD
Case: PLCC2
LED colour: red
Luminosity: 14...22(typ)-35.5mcd
Dimensions: 3x2.8x1.75mm
Viewing angle: 60°
LED current: 30mA
Wavelength: 648nm
Front: flat
Operating voltage: 1.8...2.2V
Category: SMD colour LEDs
Description: LED; SMD; PLCC2; red; 14÷22(typ)-35.5mcd; 3x2.8x1.75mm; 60°; 30mA
Type of diode: LED
Mounting: SMD
Case: PLCC2
LED colour: red
Luminosity: 14...22(typ)-35.5mcd
Dimensions: 3x2.8x1.75mm
Viewing angle: 60°
LED current: 30mA
Wavelength: 648nm
Front: flat
Operating voltage: 1.8...2.2V
на замовлення 584 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 23.98 грн |
| 26+ | 15.02 грн |
| 100+ | 9.28 грн |
| 114+ | 7.77 грн |
| 312+ | 7.32 грн |
| VLMD31L2N1-GS18 |
|
Виробник: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; PLCC2; red; 14÷22(typ)-35.5mcd; 3x2.8x1.75mm; 60°; 30mA
Type of diode: LED
Mounting: SMD
Case: PLCC2
LED colour: red
Luminosity: 14...22(typ)-35.5mcd
Dimensions: 3x2.8x1.75mm
Viewing angle: 60°
LED current: 30mA
Wavelength: 648nm
Front: flat
Operating voltage: 1.8...2.2V
Category: SMD colour LEDs
Description: LED; SMD; PLCC2; red; 14÷22(typ)-35.5mcd; 3x2.8x1.75mm; 60°; 30mA
Type of diode: LED
Mounting: SMD
Case: PLCC2
LED colour: red
Luminosity: 14...22(typ)-35.5mcd
Dimensions: 3x2.8x1.75mm
Viewing angle: 60°
LED current: 30mA
Wavelength: 648nm
Front: flat
Operating voltage: 1.8...2.2V
товар відсутній
| VLMD31L2P1-GS08 |
|
Виробник: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; PLCC2; red; 14÷22(typ)-56mcd; 3x2.8x1.75mm; 60°; 1.8÷2.2V
Type of diode: LED
Mounting: SMD
Case: PLCC2
LED colour: red
Luminosity: 14...22(typ)-56mcd
Dimensions: 3x2.8x1.75mm
Viewing angle: 60°
LED current: 30mA
Wavelength: 648nm
Front: flat
Operating voltage: 1.8...2.2V
Category: SMD colour LEDs
Description: LED; SMD; PLCC2; red; 14÷22(typ)-56mcd; 3x2.8x1.75mm; 60°; 1.8÷2.2V
Type of diode: LED
Mounting: SMD
Case: PLCC2
LED colour: red
Luminosity: 14...22(typ)-56mcd
Dimensions: 3x2.8x1.75mm
Viewing angle: 60°
LED current: 30mA
Wavelength: 648nm
Front: flat
Operating voltage: 1.8...2.2V
товар відсутній
| RCA0805220KFHEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 220kΩ; 125mW; ±1%; -55÷155°C; 50ppm/°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 220kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 0805; 220kΩ; 125mW; ±1%; -55÷155°C; 50ppm/°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 220kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
товар відсутній
| RCA080568R0JNEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 68Ω; 125mW; ±5%; -55÷155°C; 200ppm/°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 68Ω
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 0805; 68Ω; 125mW; ±5%; -55÷155°C; 200ppm/°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 68Ω
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Conform to the norm: AEC Q200
товар відсутній
| CRCW25123M60FKEG |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 3.6MΩ; 1W; ±1%; -55÷155°C
Mounting: SMD
Operating temperature: -55...155°C
Power: 1W
Case - mm: 6332
Case - inch: 2512
Type of resistor: thick film
Resistance: 3.6MΩ
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 3.6MΩ; 1W; ±1%; -55÷155°C
Mounting: SMD
Operating temperature: -55...155°C
Power: 1W
Case - mm: 6332
Case - inch: 2512
Type of resistor: thick film
Resistance: 3.6MΩ
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
товар відсутній
| SISS10DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A; 36W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 36W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A; 36W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 36W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| VJ1206A222KXCAT |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 2.2nF; 200V; C0G (NP0); ±10%; SMD; 1206
Operating temperature: -55...125°C
Mounting: SMD
Tolerance: ±10%
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 2.2nF
Operating voltage: 200V
Case - mm: 3216
Case - inch: 1206
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 2.2nF; 200V; C0G (NP0); ±10%; SMD; 1206
Operating temperature: -55...125°C
Mounting: SMD
Tolerance: ±10%
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 2.2nF
Operating voltage: 200V
Case - mm: 3216
Case - inch: 1206
товар відсутній
| VJ0805Y153KXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 15nF; 50V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 15nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 15nF; 50V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 15nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
товар відсутній
| SIA432DJ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 19.2W
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 19.2W
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| AC03000003901JAC00 |
|
Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 3.9kΩ; 3W; ±5%; Ø4.8x13mm; axial
Type of resistor: wire-wound
Mounting: THT
Resistance: 3.9kΩ
Power: 3W
Tolerance: ±5%
Body dimensions: Ø4.8x13mm
Leads: axial
Conform to the norm: AEC Q200
Category: Power resistors
Description: Resistor: wire-wound; THT; 3.9kΩ; 3W; ±5%; Ø4.8x13mm; axial
Type of resistor: wire-wound
Mounting: THT
Resistance: 3.9kΩ
Power: 3W
Tolerance: ±5%
Body dimensions: Ø4.8x13mm
Leads: axial
Conform to the norm: AEC Q200
товар відсутній
| AC07000003901JAC00 |
|
Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 3.9kΩ; 7W; ±5%; Ø7.5x26mm; axial
Type of resistor: wire-wound
Mounting: THT
Resistance: 3.9kΩ
Tolerance: ±5%
Power: 7W
Body dimensions: Ø7.5x26mm
Conform to the norm: AEC Q200
Leads: axial
Category: Power resistors
Description: Resistor: wire-wound; THT; 3.9kΩ; 7W; ±5%; Ø7.5x26mm; axial
Type of resistor: wire-wound
Mounting: THT
Resistance: 3.9kΩ
Tolerance: ±5%
Power: 7W
Body dimensions: Ø7.5x26mm
Conform to the norm: AEC Q200
Leads: axial
товар відсутній
| RCA12063K90JNEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1206; 3.9kΩ; 250mW; ±5%; -55÷155°C; 200ppm/°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 3.9kΩ
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 1206; 3.9kΩ; 250mW; ±5%; -55÷155°C; 200ppm/°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 3.9kΩ
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Conform to the norm: AEC Q200
товар відсутній
| SIR466DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 54W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 54W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 54W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 54W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SFH6136-X001 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 19-35%@16mA
Transfer rate: 1Mbps
Case: DIP8
Conform to the norm: UL
Turn-on time: 0.3µs
Turn-off time: 0.3µs
Max. off-state voltage: 3V
Output voltage: -500mV...25V
Manufacturer series: SFH6136
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 19-35%@16mA
Transfer rate: 1Mbps
Case: DIP8
Conform to the norm: UL
Turn-on time: 0.3µs
Turn-off time: 0.3µs
Max. off-state voltage: 3V
Output voltage: -500mV...25V
Manufacturer series: SFH6136
товар відсутній
| MAL205258479E3 |
|
Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 47uF; 385VDC; Ø25x30mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 47µF
Operating voltage: 385V DC
Body dimensions: Ø25x30mm
Tolerance: ±20%
Service life: 15000h
Operating temperature: -40...85°C
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 47uF; 385VDC; Ø25x30mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 47µF
Operating voltage: 385V DC
Body dimensions: Ø25x30mm
Tolerance: ±20%
Service life: 15000h
Operating temperature: -40...85°C
товар відсутній
| AC04000002201JAC00 |
|
Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 2.2kΩ; 4W; ±5%; Ø5.5x16.5mm; axial
Resistance: 2.2kΩ
Power: 4W
Tolerance: ±5%
Mounting: THT
Leads: axial
Body dimensions: Ø5.5x16.5mm
Conform to the norm: AEC Q200
Type of resistor: wire-wound
Category: Power resistors
Description: Resistor: wire-wound; THT; 2.2kΩ; 4W; ±5%; Ø5.5x16.5mm; axial
Resistance: 2.2kΩ
Power: 4W
Tolerance: ±5%
Mounting: THT
Leads: axial
Body dimensions: Ø5.5x16.5mm
Conform to the norm: AEC Q200
Type of resistor: wire-wound
товар відсутній
| AC05000002201JAC00 |
|
Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 2.2kΩ; 5W; ±5%; Ø7.5x18mm; axial
Resistance: 2.2kΩ
Power: 5W
Tolerance: ±5%
Mounting: THT
Leads: axial
Body dimensions: Ø7.5x18mm
Conform to the norm: AEC Q200
Type of resistor: wire-wound
Category: Power resistors
Description: Resistor: wire-wound; THT; 2.2kΩ; 5W; ±5%; Ø7.5x18mm; axial
Resistance: 2.2kΩ
Power: 5W
Tolerance: ±5%
Mounting: THT
Leads: axial
Body dimensions: Ø7.5x18mm
Conform to the norm: AEC Q200
Type of resistor: wire-wound
товар відсутній
| AC03000004701JAC00 |
|
Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 4.7kΩ; 3W; ±5%; Ø4.8x13mm; axial
Resistance: 4.7kΩ
Power: 3W
Tolerance: ±5%
Mounting: THT
Body dimensions: Ø4.8x13mm
Leads: axial
Conform to the norm: AEC Q200
Type of resistor: wire-wound
Category: Power resistors
Description: Resistor: wire-wound; THT; 4.7kΩ; 3W; ±5%; Ø4.8x13mm; axial
Resistance: 4.7kΩ
Power: 3W
Tolerance: ±5%
Mounting: THT
Body dimensions: Ø4.8x13mm
Leads: axial
Conform to the norm: AEC Q200
Type of resistor: wire-wound
товар відсутній
| SI2333CDS-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -7.1A; Idm: -20A
Kind of package: reel; tape
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Mounting: SMD
Case: SOT23
Drain-source voltage: -12V
Drain current: -7.1A
On-state resistance: 59mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -7.1A; Idm: -20A
Kind of package: reel; tape
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Mounting: SMD
Case: SOT23
Drain-source voltage: -12V
Drain current: -7.1A
On-state resistance: 59mΩ
Type of transistor: P-MOSFET
на замовлення 2488 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 46.33 грн |
| 10+ | 37.96 грн |
| 25+ | 30.57 грн |
| 42+ | 21.06 грн |
| 116+ | 19.92 грн |
| 1000+ | 19.62 грн |
| SI2333CDS-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.7A; Idm: -20A; 1.6W; SOT23
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Mounting: SMD
Case: SOT23
Drain-source voltage: -12V
Drain current: -5.7A
On-state resistance: 35mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.7A; Idm: -20A; 1.6W; SOT23
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Mounting: SMD
Case: SOT23
Drain-source voltage: -12V
Drain current: -5.7A
On-state resistance: 35mΩ
Type of transistor: P-MOSFET
на замовлення 2604 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 39.01 грн |
| 12+ | 31.55 грн |
| 25+ | 27.92 грн |
| 78+ | 11.4 грн |
| 213+ | 10.79 грн |
| SI2333DDS-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.2A; Idm: -20A; 1.1W; SOT23
Kind of package: reel; tape
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Mounting: SMD
Case: SOT23
Drain-source voltage: -12V
Drain current: -5.2A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.2A; Idm: -20A; 1.1W; SOT23
Kind of package: reel; tape
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Mounting: SMD
Case: SOT23
Drain-source voltage: -12V
Drain current: -5.2A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
на замовлення 2560 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 24.15 грн |
| 18+ | 21.51 грн |
| 25+ | 18.04 грн |
| 71+ | 12.45 грн |
| 195+ | 11.77 грн |
| SI2333DS-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -5.3A; Idm: -20A
Kind of package: reel; tape
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 18nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Mounting: SMD
Case: SOT23
Drain-source voltage: -12V
Drain current: -5.3A
On-state resistance: 59mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -5.3A; Idm: -20A
Kind of package: reel; tape
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 18nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Mounting: SMD
Case: SOT23
Drain-source voltage: -12V
Drain current: -5.3A
On-state resistance: 59mΩ
Type of transistor: P-MOSFET
на замовлення 2925 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 57.71 грн |
| 10+ | 46.57 грн |
| 25+ | 40.91 грн |
| 32+ | 28.38 грн |
| 86+ | 26.87 грн |
| 1000+ | 25.89 грн |
| SI2333DS-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -5.3A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.3A
Pulsed drain current: -20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 59mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -5.3A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.3A
Pulsed drain current: -20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 59mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI7108DN-T1-E3 | |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 22A; Idm: 60A; 3.8W
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 22A
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Gate charge: 30nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 22A; Idm: 60A; 3.8W
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 22A
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Gate charge: 30nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 60A
товар відсутній
| SI7108DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 22A; Idm: 60A; 3.8W
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 22A
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Gate charge: 30nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 22A; Idm: 60A; 3.8W
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 22A
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Gate charge: 30nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 60A
товар відсутній
| RCA1206220RJNEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1206; 220Ω; 250mW; ±5%; -55÷155°C; 200ppm/°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 220Ω
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 1206; 220Ω; 250mW; ±5%; -55÷155°C; 200ppm/°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 220Ω
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Conform to the norm: AEC Q200
товар відсутній
| TSOP98638 |
|
Виробник: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2÷3.6V; 45°
Viewing angle: 45°
Type of photoelement: integrated IR receiver
Mounting: THT
Supply voltage: 2...3.6V
Frequency: 38kHz
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2÷3.6V; 45°
Viewing angle: 45°
Type of photoelement: integrated IR receiver
Mounting: THT
Supply voltage: 2...3.6V
Frequency: 38kHz
товар відсутній
| RCA04022K20FKED |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0402; 2.2kΩ; 63mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 2.2kΩ
Power: 63mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 0402; 2.2kΩ; 63mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 2.2kΩ
Power: 63mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
товар відсутній
| GSC00AP1012EARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 100uF; 250VDC; ±20%; -40÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 100µF
Operating voltage: 250V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 18x21.5mm
Height: 21.5mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 100uF; 250VDC; ±20%; -40÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 100µF
Operating voltage: 250V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 18x21.5mm
Height: 21.5mm
товар відсутній
| MAL204313101E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 250VDC; Ø21x38mm; ±-10.5%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 250V DC
Body dimensions: Ø21x38mm
Tolerance: ±-10.5%
Operating temperature: -40...85°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 250VDC; Ø21x38mm; ±-10.5%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 250V DC
Body dimensions: Ø21x38mm
Tolerance: ±-10.5%
Operating temperature: -40...85°C
товар відсутній
| SI4838BDY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 34A; Idm: 70A; 5.7W
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Gate charge: 84nC
Technology: TrenchFET®
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±8V
Pulsed drain current: 70A
Type of transistor: N-MOSFET
Power dissipation: 5.7W
On-state resistance: 4mΩ
Drain current: 34A
Drain-source voltage: 12V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 34A; Idm: 70A; 5.7W
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Gate charge: 84nC
Technology: TrenchFET®
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±8V
Pulsed drain current: 70A
Type of transistor: N-MOSFET
Power dissipation: 5.7W
On-state resistance: 4mΩ
Drain current: 34A
Drain-source voltage: 12V
товар відсутній
| SI4838DY-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 25A; Idm: 60A; 3.5W
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Gate charge: 60nC
Technology: TrenchFET®
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±8V
Pulsed drain current: 60A
Type of transistor: N-MOSFET
Power dissipation: 3.5W
On-state resistance: 4mΩ
Drain current: 25A
Drain-source voltage: 12V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 25A; Idm: 60A; 3.5W
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Gate charge: 60nC
Technology: TrenchFET®
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±8V
Pulsed drain current: 60A
Type of transistor: N-MOSFET
Power dissipation: 3.5W
On-state resistance: 4mΩ
Drain current: 25A
Drain-source voltage: 12V
товар відсутній
| GL41B-E3/96 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; DO213AB,MELF plastic; Ufmax: 1.1V
Type of diode: rectifying
Max. off-state voltage: 100V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: DO213AB; MELF plastic
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Capacitance: 8pF
Load current: 1A
Max. forward voltage: 1.1V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; DO213AB,MELF plastic; Ufmax: 1.1V
Type of diode: rectifying
Max. off-state voltage: 100V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: DO213AB; MELF plastic
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Capacitance: 8pF
Load current: 1A
Max. forward voltage: 1.1V
на замовлення 900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 21.13 грн |
| 50+ | 15.02 грн |
| 100+ | 13.36 грн |
| 102+ | 8.68 грн |
| 279+ | 8.21 грн |
| V30D60C-M3/I |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 15Ax2; SMPD; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.57V
Case: SMPD
Kind of package: reel; tape
Max. forward impulse current: 170A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 15Ax2; SMPD; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.57V
Case: SMPD
Kind of package: reel; tape
Max. forward impulse current: 170A
товар відсутній
| Si9933CDY-T1-E3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4A; Idm: -20A
Mounting: SMD
Drain-source voltage: -20V
Drain current: -4A
On-state resistance: 94mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Case: SO8
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4A; Idm: -20A
Mounting: SMD
Drain-source voltage: -20V
Drain current: -4A
On-state resistance: 94mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Case: SO8
товар відсутній
| CRCW2512270RFKEG |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 270Ω; 1W; ±1%; -55÷155°C; 100ppm/°C
Operating temperature: -55...155°C
Case - mm: 6332
Case - inch: 2512
Mounting: SMD
Type of resistor: thick film
Power: 1W
Resistance: 270Ω
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 270Ω; 1W; ±1%; -55÷155°C; 100ppm/°C
Operating temperature: -55...155°C
Case - mm: 6332
Case - inch: 2512
Mounting: SMD
Type of resistor: thick film
Power: 1W
Resistance: 270Ω
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
товар відсутній
| CRCW2512270RFKEGHP |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 270Ω; 1.5W; ±1%; -55÷155°C
Operating temperature: -55...155°C
Case - mm: 6332
Case - inch: 2512
Mounting: SMD
Type of resistor: thick film
Power: 1.5W
Resistance: 270Ω
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 270Ω; 1.5W; ±1%; -55÷155°C
Operating temperature: -55...155°C
Case - mm: 6332
Case - inch: 2512
Mounting: SMD
Type of resistor: thick film
Power: 1.5W
Resistance: 270Ω
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
товар відсутній
| CRCW2512270RFKTHBC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 270Ω; 1W; ±1%; -55÷155°C; 100ppm/°C
Operating temperature: -55...155°C
Case - mm: 6332
Case - inch: 2512
Mounting: SMD
Type of resistor: thick film
Power: 1W
Resistance: 270Ω
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 270Ω; 1W; ±1%; -55÷155°C; 100ppm/°C
Operating temperature: -55...155°C
Case - mm: 6332
Case - inch: 2512
Mounting: SMD
Type of resistor: thick film
Power: 1W
Resistance: 270Ω
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
товар відсутній
| CRCW2512270RJNEGHP |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 270Ω; 1.5W; ±5%; -55÷155°C
Operating temperature: -55...155°C
Case - mm: 6332
Case - inch: 2512
Mounting: SMD
Type of resistor: thick film
Power: 1.5W
Resistance: 270Ω
Tolerance: ±5%
Temperature coefficient: 200ppm/°C
Max. operating voltage: 500V
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 270Ω; 1.5W; ±5%; -55÷155°C
Operating temperature: -55...155°C
Case - mm: 6332
Case - inch: 2512
Mounting: SMD
Type of resistor: thick film
Power: 1.5W
Resistance: 270Ω
Tolerance: ±5%
Temperature coefficient: 200ppm/°C
Max. operating voltage: 500V
товар відсутній
| AC05000002207JAC00 |
|
Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 220mΩ; 5W; ±5%; Ø7.5x18mm; axial
Type of resistor: wire-wound
Mounting: THT
Resistance: 0.22Ω
Power: 5W
Tolerance: ±5%
Body dimensions: Ø7.5x18mm
Leads: axial
Conform to the norm: AEC Q200
Category: Power resistors
Description: Resistor: wire-wound; THT; 220mΩ; 5W; ±5%; Ø7.5x18mm; axial
Type of resistor: wire-wound
Mounting: THT
Resistance: 0.22Ω
Power: 5W
Tolerance: ±5%
Body dimensions: Ø7.5x18mm
Leads: axial
Conform to the norm: AEC Q200
товар відсутній
| SIR4606DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 16A; Idm: 40A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 31.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 22.5mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 16A; Idm: 40A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 31.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 22.5mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| AC05000003309JAC00 |
|
Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 33Ω; 5W; ±5%; Ø7.5x18mm; axial
Type of resistor: wire-wound
Mounting: THT
Resistance: 33Ω
Power: 5W
Tolerance: ±5%
Body dimensions: Ø7.5x18mm
Leads: axial
Conform to the norm: AEC Q200
Category: Power resistors
Description: Resistor: wire-wound; THT; 33Ω; 5W; ±5%; Ø7.5x18mm; axial
Type of resistor: wire-wound
Mounting: THT
Resistance: 33Ω
Power: 5W
Tolerance: ±5%
Body dimensions: Ø7.5x18mm
Leads: axial
Conform to the norm: AEC Q200
товар відсутній