| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| IRFR9010TRLPBF | VISHAY |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -5.3A Pulsed drain current: -21A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 9.1nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFR9010TRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -5.3A Pulsed drain current: -21A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 9.1nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFR9014TRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.1A Pulsed drain current: -20A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
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IRFR9014TRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.2A Pulsed drain current: -20A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFR9014TRPBF-BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.1A Pulsed drain current: -20A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFR9110TRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -3.1A; Idm: -12A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -3.1A Pulsed drain current: -12A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 8.7nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFR9214TRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -250V Drain current: -2.7A Pulsed drain current: -11A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFR9214TRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -250V Drain current: -2.7A Pulsed drain current: -11A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
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DG9424EDQ-T1-GE3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch; SPST-NO; Ch: 4; TSSOP16; 3÷8V,3÷16V; reel,tape Case: TSSOP16 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of integrated circuit: analog switch Resistance: 3Ω Output configuration: SPST-NO Number of channels: 4 Supply voltage: 3...8V; 3...16V |
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SI1424EDH-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.8W; SC70 Drain-source voltage: 20V Drain current: 4A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 11.5nC Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: SC70 |
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SI1427EDH-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1.8W; SC70 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.8W Case: SC70 Gate-source voltage: ±8V On-state resistance: 64mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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SI1428EDH-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.8W; SC70 Mounting: SMD Drain current: 4A On-state resistance: 45mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 4nC Kind of channel: enhanced Gate-source voltage: ±12V Case: SC70 Drain-source voltage: 30V |
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| SIB422EDK-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 9A; Idm: 25A; 13W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 9A Pulsed drain current: 25A Power dissipation: 13W Gate-source voltage: ±8V On-state resistance: 82mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced |
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| SQ1421EDH-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1A; 0.5W; SC70-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1A Power dissipation: 0.5W Case: SC70-6 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 3.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| SIA4265EDJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -9A Pulsed drain current: -20A Power dissipation: 15.6W Gate-source voltage: ±8V On-state resistance: 67.5mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced |
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1.5SMC200A-E3/57T | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 190÷210V; unidirectional; SMC; reel,tape; 1.5SMC Mounting: SMD Kind of package: reel; tape Manufacturer series: 1.5SMC Breakdown voltage: 190...210V Type of diode: TVS Features of semiconductor devices: glass passivated Technology: TransZorb® Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 171V Semiconductor structure: unidirectional |
на замовлення 1413 шт: термін постачання 21-30 дні (днів) |
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VR37000002004JA100 | VISHAY |
Category: THT Resistors Description: Resistor: metal glaze; THT; 2MΩ; 0.5W; ±5%; Ø4x10mm; 200ppm/°C Type of resistor: metal glaze Mounting: THT Resistance: 2MΩ Power: 0.5W Tolerance: ±5% Max. operating voltage: 3.5kV DC Body dimensions: Ø4x10mm Temperature coefficient: 200ppm/°C Leads: axial |
на замовлення 3890 шт: термін постачання 21-30 дні (днів) |
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VS-30CTQ060-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.56V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.56V Max. load current: 30A Max. forward impulse current: 260A Kind of package: tube |
на замовлення 206 шт: термін постачання 21-30 дні (днів) |
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VS-30CTQ060S-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 15Ax2; D2PAK; tube Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 15A x2 Semiconductor structure: common cathode; double Capacitance: 500pF Case: D2PAK Max. forward voltage: 0.82V Max. load current: 30A Leakage current: 7mA Max. forward impulse current: 1kA Kind of package: tube |
на замовлення 199 шт: термін постачання 21-30 дні (днів) |
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CRCW12062K00FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 2kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 2kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 11800 шт: термін постачання 21-30 дні (днів) |
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LCS964MCS04020DB00 | VISHAY |
Category: SMD resistors Description: Kit: resistors; SMD; 0402; ±0.1%; 47Ω÷221kΩ; No.of val: 90; 3600pcs. Tolerance: ±0.1% Mounting: SMD Case - inch: 0402 Type of kit: resistors Number of values: 90 Range of values: 47Ω...221kΩ Quantity in set/package: 3600pcs. Case - mm: 1005 |
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VJ0603Y103MXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 10nF; 50V; X7R; ±20%; SMD; 0603 Mounting: SMD Case - inch: 0603 Case - mm: 1608 Tolerance: ±20% Operating temperature: -55...125°C Operating voltage: 50V Kind of capacitor: MLCC Type of capacitor: ceramic Dielectric: X7R Capacitance: 10nF |
на замовлення 3500 шт: термін постачання 21-30 дні (днів) |
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CRCW06033M90FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 3.9MΩ; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 3.9MΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
на замовлення 1700 шт: термін постачання 21-30 дні (днів) |
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MAL215957471E3 | VISHAY |
Category: SNAP-IN electrolytic capacitors Description: Capacitor: electrolytic; 470uF; 450VDC; Ø35x50mm; ±20%; -40÷105°C Type of capacitor: electrolytic Capacitance: 470µF Operating voltage: 450V DC Body dimensions: Ø35x50mm Tolerance: ±20% Operating temperature: -40...105°C |
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| SI1965DH-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W Polarisation: unipolar Power dissipation: 1.25W Kind of package: reel; tape Gate charge: 4.2nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -3A Mounting: SMD Case: SC70-6; SOT363 Drain-source voltage: -12V Drain current: -1.3A On-state resistance: 710mΩ Type of transistor: P-MOSFET x2 |
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| SI1965DH-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W Polarisation: unipolar Power dissipation: 1.25W Kind of package: reel; tape Gate charge: 4.2nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -3A Mounting: SMD Case: SC70-6; SOT363 Drain-source voltage: -12V Drain current: -1.3A On-state resistance: 710mΩ Type of transistor: P-MOSFET x2 |
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SMBJ78A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 91.25V; 4.8A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 78V Breakdown voltage: 91.25V Max. forward impulse current: 4.8A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
на замовлення 2780 шт: термін постачання 21-30 дні (днів) |
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SMBJ78D-M3/H | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 88.1V; 4.86A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 78V Breakdown voltage: 88.1V Max. forward impulse current: 4.86A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
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MRS25000C2103FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 210kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 210kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
на замовлення 4890 шт: термін постачання 21-30 дні (днів) |
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| SI1040X-T1-GE3 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.43A; Ch: 1; P-Channel; SMD; SC89-6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.43A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SC89-6 On-state resistance: 0.5Ω Kind of package: reel; tape Supply voltage: 1.8...8V DC |
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S1FLM-GS08 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1.5A; 1.8us; DO219AB,SMF; Ufmax: 1.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: DO219AB; SMF Max. forward voltage: 1.1V Max. forward impulse current: 22A Leakage current: 50µA Kind of package: reel; tape |
на замовлення 29716 шт: термін постачання 21-30 дні (днів) |
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SQ4284EY-T1_GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.9W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.4A Power dissipation: 3.9W Case: SO8 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
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MBB02070C1503FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 150kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C |
на замовлення 3028 шт: термін постачання 21-30 дні (днів) |
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T73XX104KT20 | VISHAY |
Category: Single turn THT trimmers Description: Potentiometer: mounting; single turn,vertical; 100kΩ; 500mW; ±10% Type of potentiometer: mounting Kind of potentiometer: single turn; vertical Resistance: 100kΩ Power: 0.5W Mounting: THT Tolerance: ±10% Characteristics: linear Potentiometer series: T73RXXX Track material: cermet Operating temperature: -55...125°C Potentiometer standard: 1/4" Temperature coefficient: 100ppm/°C Terminal pitch: 2.54x2.54mm Max. operating voltage: 250V IP rating: IP67 Torque: 2Ncm Electrical rotation angle: 250 ±15° Mechanical rotation angle: 290 ±5° Potentiometer features: clear scale reading |
на замовлення 337 шт: термін постачання 21-30 дні (днів) |
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T73YE104KT20 | VISHAY |
Category: Single turn THT trimmers Description: Potentiometer: mounting; single turn,horizontal; 100kΩ; 500mW Type of potentiometer: mounting Kind of potentiometer: horizontal; single turn Resistance: 100kΩ Power: 0.5W Tolerance: ±10% Characteristics: linear Potentiometer series: T73RYE Potentiometer standard: 1/4" Mechanical rotation angle: 290 ±5° Torque: 2Ncm Max. operating voltage: 250V Operating temperature: -55...125°C Mounting: THT Terminal pitch: 2.54x2.54mm Track material: cermet Electrical rotation angle: 250 ±15° Temperature coefficient: 100ppm/°C Potentiometer features: clear scale reading IP rating: IP67 |
на замовлення 978 шт: термін постачання 21-30 дні (днів) |
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T73YP104KT20 | VISHAY |
Category: Single turn THT trimmers Description: Potentiometer: mounting; single turn,horizontal; 100kΩ; 500mW Type of potentiometer: mounting Kind of potentiometer: horizontal; single turn Resistance: 100kΩ Power: 0.5W Tolerance: ±10% Characteristics: linear Potentiometer series: T73RYP Potentiometer standard: 1/4" Mechanical rotation angle: 290 ±5° Torque: 2Ncm Max. operating voltage: 250V Operating temperature: -55...125°C Mounting: THT Terminal pitch: 2.54x2.54mm Track material: cermet Electrical rotation angle: 250 ±15° Temperature coefficient: 100ppm/°C Potentiometer features: clear scale reading IP rating: IP67 |
на замовлення 1164 шт: термін постачання 21-30 дні (днів) |
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SMF26A-E3-08 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 200W; 28.9V; 4.8A; unidirectional; SMF; reel,tape; eSMP® Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 26V Breakdown voltage: 28.9V Max. forward impulse current: 4.8A Semiconductor structure: unidirectional Case: SMF Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Technology: eSMP® |
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| RS2J-E3/52T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1.5A; 250ns; DO214AA,SMB; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1.5A Reverse recovery time: 250ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Case: DO214AA; SMB Max. forward voltage: 1.3V Max. forward impulse current: 50A Leakage current: 0.2mA Kind of package: reel; tape |
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RS2J-E3/5BT | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1.5A; 250ns; DO214AA,SMB; Ufmax: 1.3V Mounting: SMD Semiconductor structure: single diode Load current: 1.5A Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Capacitance: 17pF Case: DO214AA; SMB Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching; glass passivated Reverse recovery time: 250ns Max. forward impulse current: 50A Leakage current: 0.2mA |
на замовлення 2552 шт: термін постачання 21-30 дні (днів) |
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| RS2JHE3_A/H | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1.5A; 250ns; DO214AA,SMB; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1.5A Reverse recovery time: 250ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 17pF Case: DO214AA; SMB Max. forward voltage: 1.3V Max. forward impulse current: 50A Leakage current: 0.2mA Kind of package: reel; tape |
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| SI8817DB-T2-E1 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.9A; Idm: -15A Type of transistor: P-MOSFET Mounting: SMD Kind of package: reel; tape Power dissipation: 0.9W On-state resistance: 0.32Ω Polarisation: unipolar Technology: TrenchFET® Pulsed drain current: -15A Gate charge: 19nC Drain current: -2.9A Kind of channel: enhanced Drain-source voltage: -20V Gate-source voltage: ±8V |
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MBB02070C8251FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 8.25kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 8.25kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
на замовлення 670 шт: термін постачання 21-30 дні (днів) |
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VJ0402A820GXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±2%; SMD; 0402 Mounting: SMD Operating temperature: -55...125°C Case - mm: 1005 Tolerance: ±2% Case - inch: 0402 Type of capacitor: ceramic Dielectric: C0G (NP0) Capacitance: 82pF Operating voltage: 50V |
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VJ0402A820GXXAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 82pF; 25V; C0G (NP0); ±2%; SMD; 0402 Mounting: SMD Operating temperature: -55...125°C Case - mm: 1005 Tolerance: ±2% Case - inch: 0402 Type of capacitor: ceramic Dielectric: C0G (NP0) Capacitance: 82pF Operating voltage: 25V |
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VJ0402A820JXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±5%; SMD; 0402 Mounting: SMD Operating temperature: -55...125°C Case - mm: 1005 Tolerance: ±5% Case - inch: 0402 Type of capacitor: ceramic Dielectric: C0G (NP0) Capacitance: 82pF Operating voltage: 50V |
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VJ0603A820FXAPW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±1%; SMD; 0603 Mounting: SMD Operating temperature: -55...125°C Case - mm: 1608 Tolerance: ±1% Case - inch: 0603 Type of capacitor: ceramic Dielectric: C0G (NP0) Capacitance: 82pF Operating voltage: 50V |
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VJ0603A820JXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±5%; SMD; 0603 Mounting: SMD Operating temperature: -55...125°C Case - mm: 1608 Tolerance: ±5% Case - inch: 0603 Type of capacitor: ceramic Dielectric: C0G (NP0) Capacitance: 82pF Operating voltage: 50V |
на замовлення 5600 шт: термін постачання 21-30 дні (днів) |
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VJ1206A820FXBCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 82pF; 100V; C0G (NP0); ±1%; SMD; 1206 Mounting: SMD Operating temperature: -55...125°C Case - mm: 3216 Tolerance: ±1% Case - inch: 1206 Type of capacitor: ceramic Dielectric: C0G (NP0) Capacitance: 82pF Operating voltage: 100V |
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TSHG8200 | VISHAY |
Category: IR LEDs Description: IR transmitter; 5mm; 830nm; transparent; 50mW; 20°; THT; 100mA Type of diode: IR transmitter LED diameter: 5mm Wavelength: 830nm LED lens: transparent Optical power: 50mW Viewing angle: 20° Mounting: THT LED current: 100mA Operating voltage: 1.5...1.8V |
на замовлення 2179 шт: термін постачання 21-30 дні (днів) |
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| ILQ615-4X009 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 4.42kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 4 Kind of output: transistor Insulation voltage: 4.42kV CTR@If: 160-320%@10mA Collector-emitter voltage: 70V Case: SMD16 Conform to the norm: UL Turn-on time: 6µs Turn-off time: 25µs Max. off-state voltage: 6V Manufacturer series: ILQ615 |
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| MCT62H | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Manufacturer series: MCT62H Mounting: THT Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-200%@5mA Turn-off time: 5µs Turn-on time: 6µs Collector-emitter voltage: 70V Max. off-state voltage: 6V Type of optocoupler: optocoupler Number of channels: 2 Case: DIP8 |
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RCA040222K0JNED | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0402; 22kΩ; 63mW; ±5%; -55÷155°C; 200ppm/°C Resistance: 22kΩ Power: 63mW Tolerance: ±5% Max. operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C Type of resistor: thick film Conform to the norm: AEC Q200 Case - mm: 1005 Case - inch: 0402 |
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RCA060322K0FHEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 22kΩ; 100mW; ±1%; -55÷155°C; 50ppm/°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 22kΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Conform to the norm: AEC Q200 |
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RCA060322K0FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 22kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 22kΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC Q200 |
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RCA060322K0JNEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 22kΩ; 100mW; ±5%; -55÷155°C; 200ppm/°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 22kΩ Power: 0.1W Tolerance: ±5% Max. operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C Conform to the norm: AEC Q200 |
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RCA06031M00FHEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 1MΩ; 100mW; ±1%; -55÷155°C; 50ppm/°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 1MΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Conform to the norm: AEC Q200 |
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RCA06031M00FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 1MΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 1MΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC Q200 |
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| IRFD224PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 630mA; Idm: 5A; 1W; HVMDIP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 0.63A Pulsed drain current: 5A Power dissipation: 1W Case: HVMDIP Gate-source voltage: ±20V On-state resistance: 1.1Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced |
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| IRFI634GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 5.6A; Idm: 22A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 5.6A Pulsed drain current: 22A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Gate charge: 41nC Kind of package: tube Kind of channel: enhanced |
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| IRFU214PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 2.2A; Idm: 8.8A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 2.2A Pulsed drain current: 8.8A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: THT Gate charge: 8.2nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
| IRFR9010TRLPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR9010TRPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR9014TRLPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR9014TRPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR9014TRPBF-BE3 |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR9110TRLPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.1A; Idm: -12A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.1A
Pulsed drain current: -12A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.1A; Idm: -12A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.1A
Pulsed drain current: -12A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR9214TRLPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.7A
Pulsed drain current: -11A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.7A
Pulsed drain current: -11A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR9214TRPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.7A
Pulsed drain current: -11A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.7A
Pulsed drain current: -11A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| DG9424EDQ-T1-GE3 |
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Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; TSSOP16; 3÷8V,3÷16V; reel,tape
Case: TSSOP16
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: analog switch
Resistance: 3Ω
Output configuration: SPST-NO
Number of channels: 4
Supply voltage: 3...8V; 3...16V
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; TSSOP16; 3÷8V,3÷16V; reel,tape
Case: TSSOP16
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: analog switch
Resistance: 3Ω
Output configuration: SPST-NO
Number of channels: 4
Supply voltage: 3...8V; 3...16V
товар відсутній
| SI1424EDH-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.8W; SC70
Drain-source voltage: 20V
Drain current: 4A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 11.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SC70
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.8W; SC70
Drain-source voltage: 20V
Drain current: 4A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 11.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SC70
товар відсутній
| SI1427EDH-T1-GE3 |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1.8W; SC70
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.8W
Case: SC70
Gate-source voltage: ±8V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1.8W; SC70
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.8W
Case: SC70
Gate-source voltage: ±8V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| SI1428EDH-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.8W; SC70
Mounting: SMD
Drain current: 4A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: SC70
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.8W; SC70
Mounting: SMD
Drain current: 4A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: SC70
Drain-source voltage: 30V
товар відсутній
| SIB422EDK-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 9A; Idm: 25A; 13W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9A
Pulsed drain current: 25A
Power dissipation: 13W
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 9A; Idm: 25A; 13W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9A
Pulsed drain current: 25A
Power dissipation: 13W
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SQ1421EDH-T1_GE3 |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1A; 0.5W; SC70-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1A
Power dissipation: 0.5W
Case: SC70-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1A; 0.5W; SC70-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1A
Power dissipation: 0.5W
Case: SC70-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| SIA4265EDJ-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -20A
Power dissipation: 15.6W
Gate-source voltage: ±8V
On-state resistance: 67.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -20A
Power dissipation: 15.6W
Gate-source voltage: ±8V
On-state resistance: 67.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| 1.5SMC200A-E3/57T |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 190÷210V; unidirectional; SMC; reel,tape; 1.5SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: 1.5SMC
Breakdown voltage: 190...210V
Type of diode: TVS
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 171V
Semiconductor structure: unidirectional
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 190÷210V; unidirectional; SMC; reel,tape; 1.5SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: 1.5SMC
Breakdown voltage: 190...210V
Type of diode: TVS
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 171V
Semiconductor structure: unidirectional
на замовлення 1413 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 30.07 грн |
| 19+ | 20.08 грн |
| 25+ | 19.92 грн |
| VR37000002004JA100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal glaze; THT; 2MΩ; 0.5W; ±5%; Ø4x10mm; 200ppm/°C
Type of resistor: metal glaze
Mounting: THT
Resistance: 2MΩ
Power: 0.5W
Tolerance: ±5%
Max. operating voltage: 3.5kV DC
Body dimensions: Ø4x10mm
Temperature coefficient: 200ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal glaze; THT; 2MΩ; 0.5W; ±5%; Ø4x10mm; 200ppm/°C
Type of resistor: metal glaze
Mounting: THT
Resistance: 2MΩ
Power: 0.5W
Tolerance: ±5%
Max. operating voltage: 3.5kV DC
Body dimensions: Ø4x10mm
Temperature coefficient: 200ppm/°C
Leads: axial
на замовлення 3890 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 12.84 грн |
| 50+ | 10.42 грн |
| 130+ | 7.09 грн |
| 350+ | 6.72 грн |
| VS-30CTQ060-M3 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.56V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.56V
Max. load current: 30A
Max. forward impulse current: 260A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.56V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.56V
Max. load current: 30A
Max. forward impulse current: 260A
Kind of package: tube
на замовлення 206 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 108.1 грн |
| 5+ | 92.08 грн |
| 10+ | 80.76 грн |
| 12+ | 75.47 грн |
| 32+ | 71.7 грн |
| VS-30CTQ060S-M3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 15Ax2; D2PAK; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Capacitance: 500pF
Case: D2PAK
Max. forward voltage: 0.82V
Max. load current: 30A
Leakage current: 7mA
Max. forward impulse current: 1kA
Kind of package: tube
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 15Ax2; D2PAK; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Capacitance: 500pF
Case: D2PAK
Max. forward voltage: 0.82V
Max. load current: 30A
Leakage current: 7mA
Max. forward impulse current: 1kA
Kind of package: tube
на замовлення 199 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 102.41 грн |
| 10+ | 70.19 грн |
| 14+ | 66.42 грн |
| 37+ | 62.64 грн |
| 100+ | 60.38 грн |
| CRCW12062K00FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 2kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 2kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 2kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 2kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 11800 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.39 грн |
| 500+ | 1.3 грн |
| 1000+ | 0.83 грн |
| 2300+ | 0.39 грн |
| 5000+ | 0.35 грн |
| LCS964MCS04020DB00 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Kit: resistors; SMD; 0402; ±0.1%; 47Ω÷221kΩ; No.of val: 90; 3600pcs.
Tolerance: ±0.1%
Mounting: SMD
Case - inch: 0402
Type of kit: resistors
Number of values: 90
Range of values: 47Ω...221kΩ
Quantity in set/package: 3600pcs.
Case - mm: 1005
Category: SMD resistors
Description: Kit: resistors; SMD; 0402; ±0.1%; 47Ω÷221kΩ; No.of val: 90; 3600pcs.
Tolerance: ±0.1%
Mounting: SMD
Case - inch: 0402
Type of kit: resistors
Number of values: 90
Range of values: 47Ω...221kΩ
Quantity in set/package: 3600pcs.
Case - mm: 1005
товар відсутній
| VJ0603Y103MXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 10nF; 50V; X7R; ±20%; SMD; 0603
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Tolerance: ±20%
Operating temperature: -55...125°C
Operating voltage: 50V
Kind of capacitor: MLCC
Type of capacitor: ceramic
Dielectric: X7R
Capacitance: 10nF
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 10nF; 50V; X7R; ±20%; SMD; 0603
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Tolerance: ±20%
Operating temperature: -55...125°C
Operating voltage: 50V
Kind of capacitor: MLCC
Type of capacitor: ceramic
Dielectric: X7R
Capacitance: 10nF
на замовлення 3500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 59+ | 6.95 грн |
| 622+ | 0.61 грн |
| 807+ | 0.47 грн |
| 863+ | 0.44 грн |
| 1090+ | 0.35 грн |
| CRCW06033M90FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.9MΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 3.9MΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.9MΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 3.9MΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
на замовлення 1700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.82 грн |
| 500+ | 0.88 грн |
| 1000+ | 0.52 грн |
| MAL215957471E3 |
|
Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; 470uF; 450VDC; Ø35x50mm; ±20%; -40÷105°C
Type of capacitor: electrolytic
Capacitance: 470µF
Operating voltage: 450V DC
Body dimensions: Ø35x50mm
Tolerance: ±20%
Operating temperature: -40...105°C
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; 470uF; 450VDC; Ø35x50mm; ±20%; -40÷105°C
Type of capacitor: electrolytic
Capacitance: 470µF
Operating voltage: 450V DC
Body dimensions: Ø35x50mm
Tolerance: ±20%
Operating temperature: -40...105°C
товар відсутній
| SI1965DH-T1-E3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W
Polarisation: unipolar
Power dissipation: 1.25W
Kind of package: reel; tape
Gate charge: 4.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -3A
Mounting: SMD
Case: SC70-6; SOT363
Drain-source voltage: -12V
Drain current: -1.3A
On-state resistance: 710mΩ
Type of transistor: P-MOSFET x2
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W
Polarisation: unipolar
Power dissipation: 1.25W
Kind of package: reel; tape
Gate charge: 4.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -3A
Mounting: SMD
Case: SC70-6; SOT363
Drain-source voltage: -12V
Drain current: -1.3A
On-state resistance: 710mΩ
Type of transistor: P-MOSFET x2
товар відсутній
| SI1965DH-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W
Polarisation: unipolar
Power dissipation: 1.25W
Kind of package: reel; tape
Gate charge: 4.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -3A
Mounting: SMD
Case: SC70-6; SOT363
Drain-source voltage: -12V
Drain current: -1.3A
On-state resistance: 710mΩ
Type of transistor: P-MOSFET x2
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W
Polarisation: unipolar
Power dissipation: 1.25W
Kind of package: reel; tape
Gate charge: 4.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -3A
Mounting: SMD
Case: SC70-6; SOT363
Drain-source voltage: -12V
Drain current: -1.3A
On-state resistance: 710mΩ
Type of transistor: P-MOSFET x2
товар відсутній
| SMBJ78A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 91.25V; 4.8A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 91.25V
Max. forward impulse current: 4.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 91.25V; 4.8A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 91.25V
Max. forward impulse current: 4.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
на замовлення 2780 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 13.33 грн |
| 55+ | 7.32 грн |
| 100+ | 6.49 грн |
| 155+ | 5.61 грн |
| 430+ | 5.3 грн |
| SMBJ78D-M3/H |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 88.1V; 4.86A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 88.1V
Max. forward impulse current: 4.86A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 88.1V; 4.86A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 88.1V
Max. forward impulse current: 4.86A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
товар відсутній
| MRS25000C2103FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 210kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 210kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 210kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 210kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
на замовлення 4890 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 7.82 грн |
| 130+ | 2.99 грн |
| 1000+ | 1.86 грн |
| SI1040X-T1-GE3 |
|
Виробник: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.43A; Ch: 1; P-Channel; SMD; SC89-6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.43A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SC89-6
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 1.8...8V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.43A; Ch: 1; P-Channel; SMD; SC89-6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.43A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SC89-6
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 1.8...8V DC
товар відсутній
| S1FLM-GS08 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 1.8us; DO219AB,SMF; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO219AB; SMF
Max. forward voltage: 1.1V
Max. forward impulse current: 22A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 1.8us; DO219AB,SMF; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO219AB; SMF
Max. forward voltage: 1.1V
Max. forward impulse current: 22A
Leakage current: 50µA
Kind of package: reel; tape
на замовлення 29716 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 19.51 грн |
| 30+ | 12.91 грн |
| 49+ | 7.73 грн |
| 100+ | 6.09 грн |
| 250+ | 4.96 грн |
| 393+ | 2.23 грн |
| 1080+ | 2.11 грн |
| SQ4284EY-T1_GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.9W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Power dissipation: 3.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.9W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Power dissipation: 3.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MBB02070C1503FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 150kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Category: THT Resistors
Description: Resistor: metal film; THT; 150kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
на замовлення 3028 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 10.57 грн |
| 68+ | 5.58 грн |
| 83+ | 4.56 грн |
| 100+ | 4.18 грн |
| 500+ | 3.38 грн |
| 578+ | 1.52 грн |
| 1588+ | 1.44 грн |
| T73XX104KT20 |
|
Виробник: VISHAY
Category: Single turn THT trimmers
Description: Potentiometer: mounting; single turn,vertical; 100kΩ; 500mW; ±10%
Type of potentiometer: mounting
Kind of potentiometer: single turn; vertical
Resistance: 100kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Potentiometer series: T73RXXX
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard: 1/4"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.54x2.54mm
Max. operating voltage: 250V
IP rating: IP67
Torque: 2Ncm
Electrical rotation angle: 250 ±15°
Mechanical rotation angle: 290 ±5°
Potentiometer features: clear scale reading
Category: Single turn THT trimmers
Description: Potentiometer: mounting; single turn,vertical; 100kΩ; 500mW; ±10%
Type of potentiometer: mounting
Kind of potentiometer: single turn; vertical
Resistance: 100kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Potentiometer series: T73RXXX
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard: 1/4"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.54x2.54mm
Max. operating voltage: 250V
IP rating: IP67
Torque: 2Ncm
Electrical rotation angle: 250 ±15°
Mechanical rotation angle: 290 ±5°
Potentiometer features: clear scale reading
на замовлення 337 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 75.91 грн |
| 7+ | 61.06 грн |
| 24+ | 37.13 грн |
| 65+ | 35.09 грн |
| T73YE104KT20 |
|
Виробник: VISHAY
Category: Single turn THT trimmers
Description: Potentiometer: mounting; single turn,horizontal; 100kΩ; 500mW
Type of potentiometer: mounting
Kind of potentiometer: horizontal; single turn
Resistance: 100kΩ
Power: 0.5W
Tolerance: ±10%
Characteristics: linear
Potentiometer series: T73RYE
Potentiometer standard: 1/4"
Mechanical rotation angle: 290 ±5°
Torque: 2Ncm
Max. operating voltage: 250V
Operating temperature: -55...125°C
Mounting: THT
Terminal pitch: 2.54x2.54mm
Track material: cermet
Electrical rotation angle: 250 ±15°
Temperature coefficient: 100ppm/°C
Potentiometer features: clear scale reading
IP rating: IP67
Category: Single turn THT trimmers
Description: Potentiometer: mounting; single turn,horizontal; 100kΩ; 500mW
Type of potentiometer: mounting
Kind of potentiometer: horizontal; single turn
Resistance: 100kΩ
Power: 0.5W
Tolerance: ±10%
Characteristics: linear
Potentiometer series: T73RYE
Potentiometer standard: 1/4"
Mechanical rotation angle: 290 ±5°
Torque: 2Ncm
Max. operating voltage: 250V
Operating temperature: -55...125°C
Mounting: THT
Terminal pitch: 2.54x2.54mm
Track material: cermet
Electrical rotation angle: 250 ±15°
Temperature coefficient: 100ppm/°C
Potentiometer features: clear scale reading
IP rating: IP67
на замовлення 978 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 81.28 грн |
| 6+ | 65.51 грн |
| 20+ | 45.36 грн |
| 54+ | 42.87 грн |
| 500+ | 41.21 грн |
| T73YP104KT20 |
|
Виробник: VISHAY
Category: Single turn THT trimmers
Description: Potentiometer: mounting; single turn,horizontal; 100kΩ; 500mW
Type of potentiometer: mounting
Kind of potentiometer: horizontal; single turn
Resistance: 100kΩ
Power: 0.5W
Tolerance: ±10%
Characteristics: linear
Potentiometer series: T73RYP
Potentiometer standard: 1/4"
Mechanical rotation angle: 290 ±5°
Torque: 2Ncm
Max. operating voltage: 250V
Operating temperature: -55...125°C
Mounting: THT
Terminal pitch: 2.54x2.54mm
Track material: cermet
Electrical rotation angle: 250 ±15°
Temperature coefficient: 100ppm/°C
Potentiometer features: clear scale reading
IP rating: IP67
Category: Single turn THT trimmers
Description: Potentiometer: mounting; single turn,horizontal; 100kΩ; 500mW
Type of potentiometer: mounting
Kind of potentiometer: horizontal; single turn
Resistance: 100kΩ
Power: 0.5W
Tolerance: ±10%
Characteristics: linear
Potentiometer series: T73RYP
Potentiometer standard: 1/4"
Mechanical rotation angle: 290 ±5°
Torque: 2Ncm
Max. operating voltage: 250V
Operating temperature: -55...125°C
Mounting: THT
Terminal pitch: 2.54x2.54mm
Track material: cermet
Electrical rotation angle: 250 ±15°
Temperature coefficient: 100ppm/°C
Potentiometer features: clear scale reading
IP rating: IP67
на замовлення 1164 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 87.78 грн |
| 6+ | 70.94 грн |
| 20+ | 46.04 грн |
| 53+ | 43.02 грн |
| SMF26A-E3-08 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 200W; 28.9V; 4.8A; unidirectional; SMF; reel,tape; eSMP®
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 4.8A
Semiconductor structure: unidirectional
Case: SMF
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Technology: eSMP®
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 200W; 28.9V; 4.8A; unidirectional; SMF; reel,tape; eSMP®
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 4.8A
Semiconductor structure: unidirectional
Case: SMF
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Technology: eSMP®
товар відсутній
| RS2J-E3/52T |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 250ns; DO214AA,SMB; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DO214AA; SMB
Max. forward voltage: 1.3V
Max. forward impulse current: 50A
Leakage current: 0.2mA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 250ns; DO214AA,SMB; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DO214AA; SMB
Max. forward voltage: 1.3V
Max. forward impulse current: 50A
Leakage current: 0.2mA
Kind of package: reel; tape
товар відсутній
| RS2J-E3/5BT |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 250ns; DO214AA,SMB; Ufmax: 1.3V
Mounting: SMD
Semiconductor structure: single diode
Load current: 1.5A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Capacitance: 17pF
Case: DO214AA; SMB
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching; glass passivated
Reverse recovery time: 250ns
Max. forward impulse current: 50A
Leakage current: 0.2mA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 250ns; DO214AA,SMB; Ufmax: 1.3V
Mounting: SMD
Semiconductor structure: single diode
Load current: 1.5A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Capacitance: 17pF
Case: DO214AA; SMB
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching; glass passivated
Reverse recovery time: 250ns
Max. forward impulse current: 50A
Leakage current: 0.2mA
на замовлення 2552 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 26.42 грн |
| 50+ | 18.48 грн |
| 135+ | 17.47 грн |
| RS2JHE3_A/H |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 250ns; DO214AA,SMB; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 17pF
Case: DO214AA; SMB
Max. forward voltage: 1.3V
Max. forward impulse current: 50A
Leakage current: 0.2mA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 250ns; DO214AA,SMB; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 17pF
Case: DO214AA; SMB
Max. forward voltage: 1.3V
Max. forward impulse current: 50A
Leakage current: 0.2mA
Kind of package: reel; tape
товар відсутній
| SI8817DB-T2-E1 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.9A; Idm: -15A
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.9W
On-state resistance: 0.32Ω
Polarisation: unipolar
Technology: TrenchFET®
Pulsed drain current: -15A
Gate charge: 19nC
Drain current: -2.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.9A; Idm: -15A
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.9W
On-state resistance: 0.32Ω
Polarisation: unipolar
Technology: TrenchFET®
Pulsed drain current: -15A
Gate charge: 19nC
Drain current: -2.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Gate-source voltage: ±8V
товар відсутній
| MBB02070C8251FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 8.25kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 8.25kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 8.25kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 8.25kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
на замовлення 670 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 43.65 грн |
| 80+ | 11.48 грн |
| 220+ | 10.85 грн |
| VJ0402A820GXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±2%; SMD; 0402
Mounting: SMD
Operating temperature: -55...125°C
Case - mm: 1005
Tolerance: ±2%
Case - inch: 0402
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 82pF
Operating voltage: 50V
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±2%; SMD; 0402
Mounting: SMD
Operating temperature: -55...125°C
Case - mm: 1005
Tolerance: ±2%
Case - inch: 0402
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 82pF
Operating voltage: 50V
товар відсутній
| VJ0402A820GXXAC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 25V; C0G (NP0); ±2%; SMD; 0402
Mounting: SMD
Operating temperature: -55...125°C
Case - mm: 1005
Tolerance: ±2%
Case - inch: 0402
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 82pF
Operating voltage: 25V
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 25V; C0G (NP0); ±2%; SMD; 0402
Mounting: SMD
Operating temperature: -55...125°C
Case - mm: 1005
Tolerance: ±2%
Case - inch: 0402
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 82pF
Operating voltage: 25V
товар відсутній
| VJ0402A820JXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±5%; SMD; 0402
Mounting: SMD
Operating temperature: -55...125°C
Case - mm: 1005
Tolerance: ±5%
Case - inch: 0402
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 82pF
Operating voltage: 50V
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±5%; SMD; 0402
Mounting: SMD
Operating temperature: -55...125°C
Case - mm: 1005
Tolerance: ±5%
Case - inch: 0402
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 82pF
Operating voltage: 50V
товар відсутній
| VJ0603A820FXAPW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±1%; SMD; 0603
Mounting: SMD
Operating temperature: -55...125°C
Case - mm: 1608
Tolerance: ±1%
Case - inch: 0603
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 82pF
Operating voltage: 50V
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±1%; SMD; 0603
Mounting: SMD
Operating temperature: -55...125°C
Case - mm: 1608
Tolerance: ±1%
Case - inch: 0603
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 82pF
Operating voltage: 50V
товар відсутній
| VJ0603A820JXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±5%; SMD; 0603
Mounting: SMD
Operating temperature: -55...125°C
Case - mm: 1608
Tolerance: ±5%
Case - inch: 0603
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 82pF
Operating voltage: 50V
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±5%; SMD; 0603
Mounting: SMD
Operating temperature: -55...125°C
Case - mm: 1608
Tolerance: ±5%
Case - inch: 0603
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 82pF
Operating voltage: 50V
на замовлення 5600 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 57+ | 7.17 грн |
| 334+ | 1.13 грн |
| 417+ | 0.91 грн |
| 463+ | 0.82 грн |
| 2703+ | 0.32 грн |
| VJ1206A820FXBCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 100V; C0G (NP0); ±1%; SMD; 1206
Mounting: SMD
Operating temperature: -55...125°C
Case - mm: 3216
Tolerance: ±1%
Case - inch: 1206
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 82pF
Operating voltage: 100V
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 100V; C0G (NP0); ±1%; SMD; 1206
Mounting: SMD
Operating temperature: -55...125°C
Case - mm: 3216
Tolerance: ±1%
Case - inch: 1206
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 82pF
Operating voltage: 100V
товар відсутній
| TSHG8200 |
|
Виробник: VISHAY
Category: IR LEDs
Description: IR transmitter; 5mm; 830nm; transparent; 50mW; 20°; THT; 100mA
Type of diode: IR transmitter
LED diameter: 5mm
Wavelength: 830nm
LED lens: transparent
Optical power: 50mW
Viewing angle: 20°
Mounting: THT
LED current: 100mA
Operating voltage: 1.5...1.8V
Category: IR LEDs
Description: IR transmitter; 5mm; 830nm; transparent; 50mW; 20°; THT; 100mA
Type of diode: IR transmitter
LED diameter: 5mm
Wavelength: 830nm
LED lens: transparent
Optical power: 50mW
Viewing angle: 20°
Mounting: THT
LED current: 100mA
Operating voltage: 1.5...1.8V
на замовлення 2179 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 30.07 грн |
| 17+ | 22.94 грн |
| 50+ | 19.7 грн |
| 55+ | 16.15 грн |
| 151+ | 15.32 грн |
| ILQ615-4X009 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 4.42kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 4
Kind of output: transistor
Insulation voltage: 4.42kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: SMD16
Conform to the norm: UL
Turn-on time: 6µs
Turn-off time: 25µs
Max. off-state voltage: 6V
Manufacturer series: ILQ615
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 4.42kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 4
Kind of output: transistor
Insulation voltage: 4.42kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: SMD16
Conform to the norm: UL
Turn-on time: 6µs
Turn-off time: 25µs
Max. off-state voltage: 6V
Manufacturer series: ILQ615
товар відсутній
| MCT62H |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Manufacturer series: MCT62H
Mounting: THT
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@5mA
Turn-off time: 5µs
Turn-on time: 6µs
Collector-emitter voltage: 70V
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Number of channels: 2
Case: DIP8
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Manufacturer series: MCT62H
Mounting: THT
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@5mA
Turn-off time: 5µs
Turn-on time: 6µs
Collector-emitter voltage: 70V
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Number of channels: 2
Case: DIP8
товар відсутній
| RCA040222K0JNED |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0402; 22kΩ; 63mW; ±5%; -55÷155°C; 200ppm/°C
Resistance: 22kΩ
Power: 63mW
Tolerance: ±5%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Type of resistor: thick film
Conform to the norm: AEC Q200
Case - mm: 1005
Case - inch: 0402
Category: SMD resistors
Description: Resistor: thick film; 0402; 22kΩ; 63mW; ±5%; -55÷155°C; 200ppm/°C
Resistance: 22kΩ
Power: 63mW
Tolerance: ±5%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Type of resistor: thick film
Conform to the norm: AEC Q200
Case - mm: 1005
Case - inch: 0402
товар відсутній
| RCA060322K0FHEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 22kΩ; 100mW; ±1%; -55÷155°C; 50ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 22kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 22kΩ; 100mW; ±1%; -55÷155°C; 50ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 22kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
товар відсутній
| RCA060322K0FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 22kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 22kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 22kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 22kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
товар відсутній
| RCA060322K0JNEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 22kΩ; 100mW; ±5%; -55÷155°C; 200ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 22kΩ
Power: 0.1W
Tolerance: ±5%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 22kΩ; 100mW; ±5%; -55÷155°C; 200ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 22kΩ
Power: 0.1W
Tolerance: ±5%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Conform to the norm: AEC Q200
товар відсутній
| RCA06031M00FHEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 1MΩ; 100mW; ±1%; -55÷155°C; 50ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 1MΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 1MΩ; 100mW; ±1%; -55÷155°C; 50ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 1MΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
товар відсутній
| RCA06031M00FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 1MΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 1MΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 1MΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 1MΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
товар відсутній
| IRFD224PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 630mA; Idm: 5A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.63A
Pulsed drain current: 5A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 630mA; Idm: 5A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.63A
Pulsed drain current: 5A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFI634GPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5.6A; Idm: 22A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5.6A; Idm: 22A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFU214PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 2.2A; Idm: 8.8A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 2.2A
Pulsed drain current: 8.8A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 2.2A; Idm: 8.8A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 2.2A
Pulsed drain current: 8.8A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhanced
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