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SISS10DN-T1-GE3 Vishay / Siliconix
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
5+ | 73.96 грн |
10+ | 59.97 грн |
100+ | 40.63 грн |
500+ | 37.53 грн |
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Технічний опис SISS10DN-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 40V 60A PPAK 1212-8S, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 20 V.
Інші пропозиції SISS10DN-T1-GE3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SISS10DN-T1-GE3 | Виробник : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A; 36W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 150A Power dissipation: 36W Case: PowerPAK® 1212-8 Gate-source voltage: -16...20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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SISS10DN-T1-GE3 | Виробник : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 20 V |
товар відсутній |
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SISS10DN-T1-GE3 | Виробник : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 20 V |
товар відсутній |
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SISS10DN-T1-GE3 | Виробник : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A; 36W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 150A Power dissipation: 36W Case: PowerPAK® 1212-8 Gate-source voltage: -16...20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |