| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SIA400EDJ-T1-GE3 | VISHAY |
 SIA400EDJ-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIA413ADJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -12A; Idm: -40A Mounting: SMD Kind of package: reel; tape Gate charge: 57nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A Drain-source voltage: -12V Drain current: -12A On-state resistance: 0.1Ω Type of transistor: P-MOSFET Power dissipation: 19W Polarisation: unipolar кількість в упаковці: 3000 шт |
товару немає в наявності |
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| SIA413DJ-T1-GE3 | VISHAY |
SIA413DJ-T1-GE3 SMD P channel transistors |
товару немає в наявності |
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| SIA414DJ-T1-GE3 | VISHAY |
SIA414DJ-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIA416DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11.3A; Idm: 15A; 12W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11.3A Pulsed drain current: 15A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±20V On-state resistance: 83mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товару немає в наявності |
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| SIA421DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -35A; 12W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -12A Pulsed drain current: -35A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товару немає в наявності |
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| SIA4263DJ-T1-GE3 | VISHAY |
SIA4263DJ-T1-GE3 SMD P channel transistors |
товару немає в наявності |
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| SIA4265EDJ-T1-GE3 | VISHAY | SIA4265EDJ-T1-GE3 SMD P channel transistors |
товару немає в наявності |
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| SIA427ADJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -12A; Idm: -50A; 12W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -8V Drain current: -12A Pulsed drain current: -50A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±5V On-state resistance: 16mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товару немає в наявності |
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| SIA429DJT-T1-GE3 | VISHAY |
SIA429DJT-T1-GE3 SMD P channel transistors |
товару немає в наявності |
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| SIA430DJT-T1-GE3 | VISHAY | SIA430DJT-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIA431DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -12A; Idm: -30A; 12W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -12A Pulsed drain current: -30A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±8V On-state resistance: 25mΩ Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товару немає в наявності |
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| SIA432DJ-T1-GE3 | VISHAY |
SIA432DJ-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIA433EDJ-T1-GE3 | VISHAY |
SIA433EDJ-T1-GE3 SMD P channel transistors |
товару немає в наявності |
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| SIA436DJ-T1-GE3 | VISHAY |
SIA436DJ-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIA437DJ-T1-GE3 | VISHAY |
SIA437DJ-T1-GE3 SMD P channel transistors |
товару немає в наявності |
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| SIA440DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 12A; Idm: 50A; 12W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 12A Pulsed drain current: 50A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±12V On-state resistance: 26mΩ Mounting: SMD Gate charge: 21.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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| SIA441DJ-T1-GE3 | VISHAY |
SIA441DJ-T1-GE3 SMD P channel transistors |
товару немає в наявності |
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| SIA445EDJ-T1-GE3 | VISHAY |
SIA445EDJ-T1-GE3 SMD P channel transistors |
товару немає в наявності |
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| SiA445EDJT-T1-GE3 | VISHAY |
SIA445EDJT-T1-GE3 SMD P channel transistors |
товару немає в наявності |
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| SIA446DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 7.7A; Idm: 10A; 12W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 7.7A Pulsed drain current: 10A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±20V On-state resistance: 177mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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| SIA447DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -50A; 12W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -12A Pulsed drain current: -50A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±8V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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| SIA449DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -30A; 12W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -12A Pulsed drain current: -30A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±12V On-state resistance: 20mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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| SIA456DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 2A; 12W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 2.6A Pulsed drain current: 2A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±16V On-state resistance: 1.38Ω Mounting: SMD Gate charge: 14.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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| SIA459EDJ-T1-GE3 | VISHAY |
SIA459EDJ-T1-GE3 SMD P channel transistors |
товару немає в наявності |
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| SIA461DJ-T1-GE3 | VISHAY |
SIA461DJ-T1-GE3 SMD P channel transistors |
товару немає в наявності |
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| SIA462DJ-T1-GE3 | VISHAY |
SIA462DJ-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIA466EDJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 25A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 25A Pulsed drain current: 50A Power dissipation: 19.2W Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товару немає в наявності |
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| SIA468DJ-T1-GE3 | VISHAY |
SIA468DJ-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SiA469DJ-T1-GE3 | VISHAY |
SIA469DJ-T1-GE3 SMD P channel transistors |
на замовлення 2742 шт: термін постачання 14-21 дні (днів) |
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| SIA471DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -30.3A; Idm: -70A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -30.3A Pulsed drain current: -70A Power dissipation: 19.2W On-state resistance: 24.1mΩ Mounting: SMD Gate charge: 27.8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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| SIA472EDJ-T1-GE3 | VISHAY | SIA472EDJ-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIA477EDJ-T1-GE3 | VISHAY |
SIA477EDJ-T1-GE3 SMD P channel transistors |
товару немає в наявності |
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| SIA477EDJT-T1-GE3 | VISHAY |
SIA477EDJT-T1-GE3 SMD P channel transistors |
товару немає в наявності |
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| SIA483ADJ-T1-GE3 | VISHAY |
SIA483ADJ-T1-GE3 SMD P channel transistors |
товару немає в наявності |
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 |
SIA483DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -40A; 12W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -12A Pulsed drain current: -40A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2949 шт: термін постачання 14-21 дні (днів) |
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| SIA485DJ-T1-GE3 | VISHAY |
SIA485DJ-T1-GE3 SMD P channel transistors |
товару немає в наявності |
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| SIA517DJ-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-12V; 4.5/-4.5A Type of transistor: N/P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 12/-12V Drain current: 4.5/-4.5A Power dissipation: 6.5W Gate-source voltage: ±8V On-state resistance: 170/65mΩ Mounting: SMD Gate charge: 20/15nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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| SIA519EDJ-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4.5/-4.5A Type of transistor: N/P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 4.5/-4.5A Power dissipation: 7.8W Gate-source voltage: ±12V On-state resistance: 137/65mΩ Mounting: SMD Gate charge: 16/12nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товару немає в наявності |
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| SIA527DJ-T1-GE3 | VISHAY |
SIA527DJ-T1-GE3 Multi channel transistors |
товару немає в наявності |
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| SIA533EDJ-T1-GE3 | VISHAY |
SIA533EDJ-T1-GE3 Multi channel transistors |
товару немає в наявності |
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| SIA537EDJ-T1-GE3 | VISHAY |
SIA537EDJ-T1-GE3 Multi channel transistors |
товару немає в наявності |
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| SIA811ADJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; TrenchFET®; unipolar; -20V; 6.8W Type of transistor: P-MOSFET + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Pulsed drain current: -8A Power dissipation: 6.8W Gate-source voltage: ±8V On-state resistance: 0.205Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товару немає в наявності |
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| SIA817EDJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; TrenchFET®; unipolar; -30V; 6.5W Type of transistor: P-MOSFET + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.5A Pulsed drain current: -15A Power dissipation: 6.5W Gate-source voltage: ±12V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товару немає в наявності |
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| SIA906EDJ-T1-GE3 | VISHAY |
SIA906EDJ-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIA910EDJ-T1-GE3 | VISHAY |
SIA910EDJ-T1-GE3 Multi channel transistors |
товару немає в наявності |
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| SIA913ADJ-T1-GE3 | VISHAY |
SIA913ADJ-T1-GE3 Multi channel transistors |
товару немає в наявності |
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| SiA918EDJ-T1-GE3 | VISHAY |
SIA918EDJ-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIA921EDJ-T1-GE3 | VISHAY |
SIA921EDJ-T1-GE3 SMD P channel transistors |
товару немає в наявності |
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| SIA923AEDJ-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4.5A; 7.8W Mounting: SMD Polarisation: unipolar Power dissipation: 7.8W Kind of package: reel; tape Gate charge: 25nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -15A Drain-source voltage: -20V Drain current: -4.5A On-state resistance: 0.165Ω Type of transistor: P-MOSFET x2 кількість в упаковці: 3000 шт |
товару немає в наявності |
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| SIA923EDJ-T1-GE3 | VISHAY |
SIA923EDJ-T1-GE3 Multi channel transistors |
товару немає в наявності |
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| SiA928DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.5A; Idm: 30A Mounting: SMD Kind of package: reel; tape On-state resistance: 33mΩ Power dissipation: 7.8W Drain current: 4.5A Drain-source voltage: 30V Polarisation: unipolar Gate charge: 10nC Technology: TrenchFET® Kind of channel: enhanced Type of transistor: N-MOSFET x2 Pulsed drain current: 30A кількість в упаковці: 3000 шт |
товару немає в наявності |
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| SIA929DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.5A; Idm: -15A; 5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.5A Pulsed drain current: -15A Power dissipation: 5W Case: PowerPAK® SC70 Gate-source voltage: ±12V On-state resistance: 64mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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| SIA931DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.3A; Idm: -28A; 5W Mounting: SMD Drain current: -4.3A On-state resistance: 65mΩ Type of transistor: P-MOSFET Case: PowerPAK® SC70 Power dissipation: 5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 13nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -28A Drain-source voltage: -30V кількість в упаковці: 3000 шт |
товару немає в наявності |
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| SIA938DJT-T1-GE3 | VISHAY |
SIA938DJT-T1-GE3 Multi channel transistors |
товару немає в наявності |
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| SIA975DJ-T1-GE3 | VISHAY |
SIA975DJ-T1-GE3 SMD P channel transistors |
товару немає в наявності |
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| SIAA00DJ-T1-GE3 | VISHAY |
SIAA00DJ-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIAA02DJ-T1-GE3 | VISHAY |
SIAA02DJ-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIAA40DJ-T1-GE3 | VISHAY |
SIAA40DJ-T1-GE3 SMD N channel transistors |
товару немає в наявності |
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| SIB406EDK-T1-GE3 | VISHAY |
SIB406EDK-T1-GE3 SMD N channel transistors |
товару немає в наявності |
| SIA400EDJ-T1-GE3 |
|
Виробник: VISHAY
SIA400EDJ-T1-GE3 SMD N channel transistors
SIA400EDJ-T1-GE3 SMD N channel transistors
товару немає в наявності
| SIA413ADJ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -12A; Idm: -40A
Mounting: SMD
Kind of package: reel; tape
Gate charge: 57nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Drain-source voltage: -12V
Drain current: -12A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 19W
Polarisation: unipolar
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -12A; Idm: -40A
Mounting: SMD
Kind of package: reel; tape
Gate charge: 57nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Drain-source voltage: -12V
Drain current: -12A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 19W
Polarisation: unipolar
кількість в упаковці: 3000 шт
товару немає в наявності
| SIA416DJ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.3A; Idm: 15A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.3A
Pulsed drain current: 15A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.3A; Idm: 15A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.3A
Pulsed drain current: 15A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товару немає в наявності
| SIA421DJ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -35A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -35A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -35A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -35A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товару немає в наявності
| SIA4263DJ-T1-GE3 |
|
Виробник: VISHAY
SIA4263DJ-T1-GE3 SMD P channel transistors
SIA4263DJ-T1-GE3 SMD P channel transistors
товару немає в наявності
| SIA4265EDJ-T1-GE3 |
Виробник: VISHAY
SIA4265EDJ-T1-GE3 SMD P channel transistors
SIA4265EDJ-T1-GE3 SMD P channel transistors
товару немає в наявності
| SIA427ADJ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -12A; Idm: -50A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±5V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -12A; Idm: -50A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±5V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товару немає в наявності
| SIA429DJT-T1-GE3 |
|
Виробник: VISHAY
SIA429DJT-T1-GE3 SMD P channel transistors
SIA429DJT-T1-GE3 SMD P channel transistors
товару немає в наявності
| SIA430DJT-T1-GE3 |
Виробник: VISHAY
SIA430DJT-T1-GE3 SMD N channel transistors
SIA430DJT-T1-GE3 SMD N channel transistors
товару немає в наявності
| SIA431DJ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12A; Idm: -30A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12A
Pulsed drain current: -30A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12A; Idm: -30A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12A
Pulsed drain current: -30A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товару немає в наявності
| SIA433EDJ-T1-GE3 |
|
Виробник: VISHAY
SIA433EDJ-T1-GE3 SMD P channel transistors
SIA433EDJ-T1-GE3 SMD P channel transistors
товару немає в наявності
| SIA440DJ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; Idm: 50A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; Idm: 50A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
| SIA445EDJ-T1-GE3 |
|
Виробник: VISHAY
SIA445EDJ-T1-GE3 SMD P channel transistors
SIA445EDJ-T1-GE3 SMD P channel transistors
товару немає в наявності
| SiA445EDJT-T1-GE3 |
|
Виробник: VISHAY
SIA445EDJT-T1-GE3 SMD P channel transistors
SIA445EDJT-T1-GE3 SMD P channel transistors
товару немає в наявності
| SIA446DJ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 7.7A; Idm: 10A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 7.7A
Pulsed drain current: 10A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 177mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 7.7A; Idm: 10A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 7.7A
Pulsed drain current: 10A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 177mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
| SIA447DJ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -50A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -50A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
| SIA449DJ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -30A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -30A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -30A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -30A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
| SIA456DJ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 2A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 2A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±16V
On-state resistance: 1.38Ω
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 2A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 2A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±16V
On-state resistance: 1.38Ω
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
| SIA459EDJ-T1-GE3 |
|
Виробник: VISHAY
SIA459EDJ-T1-GE3 SMD P channel transistors
SIA459EDJ-T1-GE3 SMD P channel transistors
товару немає в наявності
| SIA466EDJ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 25A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 25A
Pulsed drain current: 50A
Power dissipation: 19.2W
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 25A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 25A
Pulsed drain current: 50A
Power dissipation: 19.2W
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товару немає в наявності
| SiA469DJ-T1-GE3 |
|
Виробник: VISHAY
SIA469DJ-T1-GE3 SMD P channel transistors
SIA469DJ-T1-GE3 SMD P channel transistors
на замовлення 2742 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 24.46 грн |
| 71+ | 14.64 грн |
| 195+ | 13.84 грн |
| SIA471DJ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -30.3A; Idm: -70A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30.3A
Pulsed drain current: -70A
Power dissipation: 19.2W
On-state resistance: 24.1mΩ
Mounting: SMD
Gate charge: 27.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -30.3A; Idm: -70A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30.3A
Pulsed drain current: -70A
Power dissipation: 19.2W
On-state resistance: 24.1mΩ
Mounting: SMD
Gate charge: 27.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
| SIA472EDJ-T1-GE3 |
Виробник: VISHAY
SIA472EDJ-T1-GE3 SMD N channel transistors
SIA472EDJ-T1-GE3 SMD N channel transistors
товару немає в наявності
| SIA477EDJ-T1-GE3 |
|
Виробник: VISHAY
SIA477EDJ-T1-GE3 SMD P channel transistors
SIA477EDJ-T1-GE3 SMD P channel transistors
товару немає в наявності
| SIA477EDJT-T1-GE3 |
|
Виробник: VISHAY
SIA477EDJT-T1-GE3 SMD P channel transistors
SIA477EDJT-T1-GE3 SMD P channel transistors
товару немає в наявності
| SIA483ADJ-T1-GE3 |
|
Виробник: VISHAY
SIA483ADJ-T1-GE3 SMD P channel transistors
SIA483ADJ-T1-GE3 SMD P channel transistors
товару немає в наявності
| SIA483DJ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -40A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -40A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -40A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -40A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2949 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 26.08 грн |
| 25+ | 22.48 грн |
| 63+ | 16.59 грн |
| 172+ | 15.7 грн |
| SIA517DJ-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-12V; 4.5/-4.5A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 12/-12V
Drain current: 4.5/-4.5A
Power dissipation: 6.5W
Gate-source voltage: ±8V
On-state resistance: 170/65mΩ
Mounting: SMD
Gate charge: 20/15nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-12V; 4.5/-4.5A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 12/-12V
Drain current: 4.5/-4.5A
Power dissipation: 6.5W
Gate-source voltage: ±8V
On-state resistance: 170/65mΩ
Mounting: SMD
Gate charge: 20/15nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
| SIA519EDJ-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4.5/-4.5A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.5/-4.5A
Power dissipation: 7.8W
Gate-source voltage: ±12V
On-state resistance: 137/65mΩ
Mounting: SMD
Gate charge: 16/12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4.5/-4.5A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.5/-4.5A
Power dissipation: 7.8W
Gate-source voltage: ±12V
On-state resistance: 137/65mΩ
Mounting: SMD
Gate charge: 16/12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товару немає в наявності
| SIA533EDJ-T1-GE3 |
|
Виробник: VISHAY
SIA533EDJ-T1-GE3 Multi channel transistors
SIA533EDJ-T1-GE3 Multi channel transistors
товару немає в наявності
| SIA537EDJ-T1-GE3 |
|
Виробник: VISHAY
SIA537EDJ-T1-GE3 Multi channel transistors
SIA537EDJ-T1-GE3 Multi channel transistors
товару немає в наявності
| SIA811ADJ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; TrenchFET®; unipolar; -20V; 6.8W
Type of transistor: P-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -8A
Power dissipation: 6.8W
Gate-source voltage: ±8V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; TrenchFET®; unipolar; -20V; 6.8W
Type of transistor: P-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -8A
Power dissipation: 6.8W
Gate-source voltage: ±8V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товару немає в наявності
| SIA817EDJ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; TrenchFET®; unipolar; -30V; 6.5W
Type of transistor: P-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.5A
Pulsed drain current: -15A
Power dissipation: 6.5W
Gate-source voltage: ±12V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; TrenchFET®; unipolar; -30V; 6.5W
Type of transistor: P-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.5A
Pulsed drain current: -15A
Power dissipation: 6.5W
Gate-source voltage: ±12V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товару немає в наявності
| SIA906EDJ-T1-GE3 |
|
Виробник: VISHAY
SIA906EDJ-T1-GE3 SMD N channel transistors
SIA906EDJ-T1-GE3 SMD N channel transistors
товару немає в наявності
| SIA910EDJ-T1-GE3 |
|
Виробник: VISHAY
SIA910EDJ-T1-GE3 Multi channel transistors
SIA910EDJ-T1-GE3 Multi channel transistors
товару немає в наявності
| SIA913ADJ-T1-GE3 |
|
Виробник: VISHAY
SIA913ADJ-T1-GE3 Multi channel transistors
SIA913ADJ-T1-GE3 Multi channel transistors
товару немає в наявності
| SiA918EDJ-T1-GE3 |
|
Виробник: VISHAY
SIA918EDJ-T1-GE3 SMD N channel transistors
SIA918EDJ-T1-GE3 SMD N channel transistors
товару немає в наявності
| SIA921EDJ-T1-GE3 |
|
Виробник: VISHAY
SIA921EDJ-T1-GE3 SMD P channel transistors
SIA921EDJ-T1-GE3 SMD P channel transistors
товару немає в наявності
| SIA923AEDJ-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4.5A; 7.8W
Mounting: SMD
Polarisation: unipolar
Power dissipation: 7.8W
Kind of package: reel; tape
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Drain-source voltage: -20V
Drain current: -4.5A
On-state resistance: 0.165Ω
Type of transistor: P-MOSFET x2
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4.5A; 7.8W
Mounting: SMD
Polarisation: unipolar
Power dissipation: 7.8W
Kind of package: reel; tape
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Drain-source voltage: -20V
Drain current: -4.5A
On-state resistance: 0.165Ω
Type of transistor: P-MOSFET x2
кількість в упаковці: 3000 шт
товару немає в наявності
| SIA923EDJ-T1-GE3 |
|
Виробник: VISHAY
SIA923EDJ-T1-GE3 Multi channel transistors
SIA923EDJ-T1-GE3 Multi channel transistors
товару немає в наявності
| SiA928DJ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.5A; Idm: 30A
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 33mΩ
Power dissipation: 7.8W
Drain current: 4.5A
Drain-source voltage: 30V
Polarisation: unipolar
Gate charge: 10nC
Technology: TrenchFET®
Kind of channel: enhanced
Type of transistor: N-MOSFET x2
Pulsed drain current: 30A
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.5A; Idm: 30A
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 33mΩ
Power dissipation: 7.8W
Drain current: 4.5A
Drain-source voltage: 30V
Polarisation: unipolar
Gate charge: 10nC
Technology: TrenchFET®
Kind of channel: enhanced
Type of transistor: N-MOSFET x2
Pulsed drain current: 30A
кількість в упаковці: 3000 шт
товару немає в наявності
| SIA929DJ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.5A; Idm: -15A; 5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.5A
Pulsed drain current: -15A
Power dissipation: 5W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.5A; Idm: -15A; 5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.5A
Pulsed drain current: -15A
Power dissipation: 5W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
| SIA931DJ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.3A; Idm: -28A; 5W
Mounting: SMD
Drain current: -4.3A
On-state resistance: 65mΩ
Type of transistor: P-MOSFET
Case: PowerPAK® SC70
Power dissipation: 5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -28A
Drain-source voltage: -30V
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.3A; Idm: -28A; 5W
Mounting: SMD
Drain current: -4.3A
On-state resistance: 65mΩ
Type of transistor: P-MOSFET
Case: PowerPAK® SC70
Power dissipation: 5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -28A
Drain-source voltage: -30V
кількість в упаковці: 3000 шт
товару немає в наявності
| SIA938DJT-T1-GE3 |
|
Виробник: VISHAY
SIA938DJT-T1-GE3 Multi channel transistors
SIA938DJT-T1-GE3 Multi channel transistors
товару немає в наявності
| SIB406EDK-T1-GE3 |
|
Виробник: VISHAY
SIB406EDK-T1-GE3 SMD N channel transistors
SIB406EDK-T1-GE3 SMD N channel transistors
товару немає в наявності