SIA413ADJ-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
Description: MOSFET P-CH 12V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
5+ | 61.81 грн |
10+ | 48.57 грн |
100+ | 37.8 грн |
500+ | 30.07 грн |
1000+ | 24.49 грн |
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Технічний опис SIA413ADJ-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 12V 12A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V, Power Dissipation (Max): 19W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Single, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V.
Інші пропозиції SIA413ADJ-T1-GE3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
SIA413ADJ-T1-GE3 | Виробник : Vishay | Trans MOSFET P-CH 12V 12A 6-Pin PowerPAK SC-70 T/R |
товар відсутній |
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SIA413ADJ-T1-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -12A; Idm: -40A Mounting: SMD Power dissipation: 19W Polarisation: unipolar Kind of package: reel; tape Gate charge: 57nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A Drain-source voltage: -12V Drain current: -12A On-state resistance: 0.1Ω Type of transistor: P-MOSFET кількість в упаковці: 3000 шт |
товар відсутній |
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SIA413ADJ-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 12V 12A PPAK SC70-6 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V Power Dissipation (Max): 19W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Single Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V |
товар відсутній |
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SIA413ADJ-T1-GE3 | Виробник : Vishay / Siliconix | MOSFET -12V Vds 8V Vgs PowerPAK SC-70 |
товар відсутній |
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SIA413ADJ-T1-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -12A; Idm: -40A Mounting: SMD Power dissipation: 19W Polarisation: unipolar Kind of package: reel; tape Gate charge: 57nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A Drain-source voltage: -12V Drain current: -12A On-state resistance: 0.1Ω Type of transistor: P-MOSFET |
товар відсутній |