SIA421DJ-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.3A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
Description: MOSFET P-CH 30V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.3A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 28.99 грн |
6000+ | 26.52 грн |
15000+ | 25.53 грн |
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Технічний опис SIA421DJ-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 5.3A, 10V, Power Dissipation (Max): 3.5W (Ta), 19W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V.
Інші пропозиції SIA421DJ-T1-GE3 за ціною від 27.82 грн до 69.3 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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SIA421DJ-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 30V 12A PPAK SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 5.3A, 10V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V |
на замовлення 53213 шт: термін постачання 21-31 дні (днів) |
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SIA421DJ-T1-GE3 | Виробник : Vishay Semiconductors | MOSFET -30V Vds 20V Vgs PowerPAK SC-70 |
на замовлення 5934 шт: термін постачання 21-30 дні (днів) |
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SIA421DJ-T1-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -35A; 12W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -12A Pulsed drain current: -35A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товару немає в наявності |
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SIA421DJ-T1-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -35A; 12W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -12A Pulsed drain current: -35A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced |
товару немає в наявності |