Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (99822) > Сторінка 1661 з 1664
Фото | Назва | Виробник | Інформація |
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RU1C002UNTCL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 200mA; Idm: 0.4A; 150mW Mounting: SMD Kind of package: reel; tape Case: SOT323F Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 0.4A Polarisation: unipolar Power dissipation: 0.15W Type of transistor: N-MOSFET On-state resistance: 4.8Ω Drain current: 0.2A Drain-source voltage: 20V |
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RV1C002UNT2CL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 150mA; Idm: 0.6A; 100mW Mounting: SMD Kind of package: reel; tape Case: X2-DFN0806-3 Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 0.6A Polarisation: unipolar Power dissipation: 0.1W Type of transistor: N-MOSFET On-state resistance: 11.4Ω Drain current: 0.15A Drain-source voltage: 20V |
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RV3C002UNT2CL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 150mA; Idm: 600A; 100mW Mounting: SMD Kind of package: reel; tape Case: X2-DFN0604-3 Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 600A Polarisation: unipolar Power dissipation: 0.1W Type of transistor: N-MOSFET On-state resistance: 5.4Ω Drain current: 0.15A Drain-source voltage: 20V |
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BZX84C10VLYT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 10V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.2µA |
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RB085T-60HZC9 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; THT; 60V; 5Ax2; ITO220AB,TO220FN; tube Mounting: THT Case: ITO220AB; TO220FN Max. off-state voltage: 60V Max. forward voltage: 0.58V Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 100A Leakage current: 0.3mA Kind of package: tube Type of diode: Schottky rectifying |
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DTA113ZCAT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 33 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ |
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DTA113ZKAT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 33 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ |
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DTA113ZU3T106 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 33 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ |
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BD4832G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: Supervisor Integrated Circuit; voltage detector; open drain Mounting: SMD Case: SSOP5 Operating temperature: -40...105°C Supply voltage: 950mV DC...10V DC Type of integrated circuit: Supervisor Integrated Circuit Number of channels: 1 Active logical level: low Kind of RESET output: open drain Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 3.2V Manufacturer series: BD48 Kind of integrated circuit: voltage detector |
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BU4832F-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: Supervisor Integrated Circuit; voltage detector; open drain Mounting: SMD Case: SOP4 Operating temperature: -40...125°C Supply voltage: 700mV DC...7V DC Type of integrated circuit: Supervisor Integrated Circuit Number of channels: 1 Active logical level: low Kind of RESET output: open drain Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 3.2V Manufacturer series: BU48 Kind of integrated circuit: voltage detector |
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BU4832G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: Supervisor Integrated Circuit; voltage detector; open drain Mounting: SMD Case: SSOP5 Operating temperature: -40...125°C Supply voltage: 700mV DC...7V DC Type of integrated circuit: Supervisor Integrated Circuit Number of channels: 1 Active logical level: low Kind of RESET output: open drain Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 3.2V Manufacturer series: BU48 Kind of integrated circuit: voltage detector |
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CDZVT2R10B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 100mW; 10V; SMD; reel,tape; SOD923; single diode Mounting: SMD Case: SOD923 Tolerance: ±2% Kind of package: reel; tape Power dissipation: 0.1W Type of diode: Zener Semiconductor structure: single diode Zener voltage: 10V Leakage current: 0.1µA |
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CDZVT2R11B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 100mW; 11V; SMD; reel,tape; SOD923; single diode Mounting: SMD Case: SOD923 Tolerance: ±2% Kind of package: reel; tape Power dissipation: 0.1W Type of diode: Zener Semiconductor structure: single diode Zener voltage: 11V Leakage current: 0.1µA |
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CDZVT2R13B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 100mW; 13V; SMD; reel,tape; SOD923; single diode Mounting: SMD Case: SOD923 Tolerance: ±2% Kind of package: reel; tape Power dissipation: 0.1W Type of diode: Zener Semiconductor structure: single diode Zener voltage: 13V Leakage current: 0.1µA |
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CDZVT2R15B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 100mW; 15V; SMD; reel,tape; SOD923; single diode Mounting: SMD Case: SOD923 Tolerance: ±2% Kind of package: reel; tape Power dissipation: 0.1W Type of diode: Zener Semiconductor structure: single diode Zener voltage: 15V Leakage current: 0.1µA |
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CDZVT2R16B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 100mW; 16V; SMD; reel,tape; SOD923; single diode Mounting: SMD Case: SOD923 Tolerance: ±2% Kind of package: reel; tape Power dissipation: 0.1W Type of diode: Zener Semiconductor structure: single diode Zener voltage: 16V Leakage current: 0.1µA |
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CDZVT2R2.2B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 100mW; 2.2V; SMD; reel,tape; SOD923; single diode Mounting: SMD Case: SOD923 Tolerance: ±2% Kind of package: reel; tape Power dissipation: 0.1W Type of diode: Zener Semiconductor structure: single diode Zener voltage: 2.2V Leakage current: 120µA |
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CDZVT2R3.0B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 100mW; 3V; SMD; reel,tape; SOD923; single diode; 50uA Mounting: SMD Case: SOD923 Tolerance: ±2% Kind of package: reel; tape Power dissipation: 0.1W Type of diode: Zener Semiconductor structure: single diode Zener voltage: 3V Leakage current: 50µA |
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CDZVT2R3.9B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 100mW; 3.9V; SMD; reel,tape; SOD923; single diode; 5uA Mounting: SMD Case: SOD923 Tolerance: ±2% Kind of package: reel; tape Power dissipation: 0.1W Type of diode: Zener Semiconductor structure: single diode Zener voltage: 3.9V Leakage current: 5µA |
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CDZVT2R7.5B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 100mW; 7.5V; SMD; reel,tape; SOD923; single diode Mounting: SMD Case: SOD923 Tolerance: ±2% Kind of package: reel; tape Power dissipation: 0.1W Type of diode: Zener Semiconductor structure: single diode Zener voltage: 7.5V Leakage current: 0.5µA |
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RF305BM6SFHTL | ROHM SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 600V; 3A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 30ns Semiconductor structure: single diode Case: DPAK Max. forward voltage: 1.7V Max. forward impulse current: 50A Kind of package: reel; tape |
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RF305BM6STL | ROHM SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 600V; 3A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 30ns Semiconductor structure: single diode Case: DPAK Max. forward voltage: 1.7V Max. forward impulse current: 50A Kind of package: reel; tape |
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BU4312F-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: Supervisor Integrated Circuit; voltage detector; CMOS; SSOP5 Mounting: SMD Case: SSOP5 Operating temperature: -40...125°C Manufacturer series: BU43 Supply voltage: 700mV DC...7V DC Type of integrated circuit: Supervisor Integrated Circuit Number of channels: 1 Active logical level: low Kind of RESET output: CMOS Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 1.2V Kind of integrated circuit: voltage detector |
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BZX84C22VLYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 22V; SMD; reel,tape; SOT23; single diode; 0.1uA Case: SOT23 Mounting: SMD Tolerance: ±6% Application: automotive industry Leakage current: 0.1µA Power dissipation: 0.25W Kind of package: reel; tape Type of diode: Zener Semiconductor structure: single diode Zener voltage: 22V |
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RSX101MM-30TFTR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Semiconductor structure: single diode Max. forward impulse current: 45A Leakage current: 0.2mA Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward voltage: 0.39V Load current: 1A |
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RSX101MM-30TR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Semiconductor structure: single diode Max. forward impulse current: 45A Leakage current: 0.2mA Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward voltage: 0.39V Load current: 1A |
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IMB11AT110 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457 Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC74; SOT457 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
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RRR040P03FRATL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -16A; 1W; SOT346 Mounting: SMD Application: automotive industry On-state resistance: 45mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 10.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -16A Case: SOT346 Drain-source voltage: -30V Drain current: -4A |
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R6524ENJTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 72A; 245W; D2PAK Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A On-state resistance: 0.185Ω Type of transistor: N-MOSFET Power dissipation: 245W Kind of package: reel; tape Gate charge: 70nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 72A Mounting: SMD Case: D2PAK |
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BR24G16F-3AGTE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 16kbEEPROM; 2-wire,I2C; 2kx8bit; 1MHz; SOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: 2-wire; I2C Memory organisation: 2kx8bit Clock frequency: 1MHz Mounting: SMD Case: SOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 5ms Kind of package: reel; tape Supply voltage: 1.6...5.5V DC |
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BR24G16FJ-3GTE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 16kbEEPROM; 2-wire,I2C; 2kx8bit; 400kHz; SOP-J8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: 2-wire; I2C Memory organisation: 2kx8bit Clock frequency: 400kHz Mounting: SMD Case: SOP-J8 Kind of interface: serial Operating temperature: -40...85°C Access time: 5ms Kind of package: reel; tape Supply voltage: 1.6...5.5V DC |
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BR24G16FVJ-3AGTE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 16kbEEPROM; 2-wire,I2C; 2kx8bit; 1MHz; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: 2-wire; I2C Memory organisation: 2kx8bit Clock frequency: 1MHz Mounting: SMD Case: TSSOP-B8J Kind of interface: serial Operating temperature: -40...85°C Access time: 5ms Kind of package: reel; tape Supply voltage: 1.6...5.5V DC |
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BR24G16FVM-3GTTR | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 16kbEEPROM; 2-wire,I2C; 2kx8bit; 400kHz; MSOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: 2-wire; I2C Memory organisation: 2kx8bit Clock frequency: 400kHz Mounting: SMD Case: MSOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 5ms Kind of package: reel; tape Supply voltage: 1.6...5.5V DC |
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BR24G16FVT-3AGE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 16kbEEPROM; 2-wire,I2C; 2kx8bit; 1MHz; TSSOP-B8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: 2-wire; I2C Memory organisation: 2kx8bit Clock frequency: 1MHz Mounting: SMD Case: TSSOP-B8 Kind of interface: serial Operating temperature: -40...85°C Access time: 5ms Kind of package: reel; tape Supply voltage: 1.6...5.5V DC |
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BR24G16FVT-3GE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 16kbEEPROM; 2-wire,I2C; 2kx8bit; 400kHz; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: 2-wire; I2C Memory organisation: 2kx8bit Clock frequency: 400kHz Mounting: SMD Case: TSSOP-B8 Kind of interface: serial Operating temperature: -40...85°C Access time: 5ms Kind of package: reel; tape Supply voltage: 1.6...5.5V DC |
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BR24G16NUX-3ATTR | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 16kbEEPROM; 2-wire,I2C; 2kx8bit; 1MHz; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: 2-wire; I2C Memory organisation: 2kx8bit Clock frequency: 1MHz Mounting: SMD Case: VSON08AX2030 Kind of interface: serial Operating temperature: -40...85°C Access time: 5ms Kind of package: reel; tape Supply voltage: 1.6...5.5V DC |
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BR24G16NUX-3TTR | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 16kbEEPROM; 2-wire,I2C; 2kx8bit; 400kHz; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: 2-wire; I2C Memory organisation: 2kx8bit Clock frequency: 400kHz Mounting: SMD Case: VSON008X2030 Kind of interface: serial Operating temperature: -40...85°C Access time: 5ms Kind of package: reel; tape Supply voltage: 1.6...5.5V DC |
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BZX84C6V8LYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 6.8V; SMD; reel,tape; SOT23; single diode; 2uA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 6.8V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 2µA Application: automotive industry |
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RRL035P03FRATR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363 Mounting: SMD Application: automotive industry Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 50mΩ Drain current: -3.5A Kind of package: reel; tape Drain-source voltage: -30V Features of semiconductor devices: ESD protected gate Gate charge: 14nC Case: SOT363 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -14A Power dissipation: 1W |
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RRL035P03TR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363 Mounting: SMD Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 50mΩ Drain current: -3.5A Kind of package: reel; tape Drain-source voltage: -30V Features of semiconductor devices: ESD protected gate Gate charge: 8nC Case: SOT363 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -14A Power dissipation: 1W |
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SML-212YTT86 | ROHM SEMICONDUCTOR |
![]() Description: LED; SMD; 0805; yellow; 22÷63mcd; 2x1.25x0.8mm; 2.05V; 20mA; 75mW Type of diode: LED Mounting: SMD Case: 0805 LED colour: yellow Luminosity: 22...63mcd Dimensions: 2x1.25x0.8mm LED current: 20mA Wavelength: 584...590nm LED lens: transparent Power: 75mW Front: flat Operating voltage: 2.05V |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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BR24G256F-3GTE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz; SOP8 Kind of package: reel; tape Supply voltage: 1.7...5.5V DC Type of integrated circuit: EEPROM memory Interface: 2-wire; I2C Kind of memory: EEPROM Memory organisation: 32kx8bit Access time: 5ms Clock frequency: 400kHz Case: SOP8 Operating temperature: -40...85°C Mounting: SMD Kind of interface: serial Memory: 256kb EEPROM |
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BR24G256FJ-3AGTE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 1MHz; SOP-J8 Kind of package: reel; tape Supply voltage: 1.7...5.5V DC Type of integrated circuit: EEPROM memory Interface: 2-wire; I2C Kind of memory: EEPROM Memory organisation: 32kx8bit Access time: 5ms Clock frequency: 1MHz Case: SOP-J8 Operating temperature: -40...85°C Mounting: SMD Kind of interface: serial Memory: 256kb EEPROM |
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BR24G256FJ-3GTE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz Kind of package: reel; tape Supply voltage: 1.7...5.5V DC Type of integrated circuit: EEPROM memory Interface: 2-wire; I2C Kind of memory: EEPROM Memory organisation: 32kx8bit Access time: 5ms Clock frequency: 400kHz Case: SOP-J8 Operating temperature: -40...85°C Mounting: SMD Kind of interface: serial Memory: 256kb EEPROM |
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BR24G256FJ-5E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 1MHz; SOP-J8 Kind of package: reel; tape Supply voltage: 1.6...5.5V DC Type of integrated circuit: EEPROM memory Interface: 2-wire; I2C Kind of memory: EEPROM Memory organisation: 32kx8bit Access time: 5ms Clock frequency: 1MHz Case: SOP-J8 Operating temperature: -40...85°C Mounting: SMD Kind of interface: serial Memory: 256kb EEPROM |
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BR24G256FVT-3GE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz Kind of package: reel; tape Supply voltage: 1.7...5.5V DC Type of integrated circuit: EEPROM memory Interface: 2-wire; I2C Kind of memory: EEPROM Memory organisation: 32kx8bit Access time: 5ms Clock frequency: 400kHz Case: TSSOP-B8 Operating temperature: -40...85°C Mounting: SMD Kind of interface: serial Memory: 256kb EEPROM |
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BR24G256NUX-5TR | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 1MHz; serial Kind of package: reel; tape Supply voltage: 1.6...5.5V DC Type of integrated circuit: EEPROM memory Interface: 2-wire; I2C Kind of memory: EEPROM Memory organisation: 32kx8bit Access time: 5ms Clock frequency: 1MHz Case: VSON08AX2030 Operating temperature: -40...85°C Mounting: SMD Kind of interface: serial Memory: 256kb EEPROM |
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BR25G256FJ-3GE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 20MHz; SOP-J8 Kind of package: reel; tape Supply voltage: 1.6...5.5V DC Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 32kx8bit Access time: 5ms Clock frequency: 20MHz Case: SOP-J8 Operating temperature: -40...85°C Mounting: SMD Kind of interface: serial Memory: 256kb EEPROM |
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BR25G256FVT-3GE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 20MHz; TSSOP-B8 Kind of package: reel; tape Supply voltage: 1.6...5.5V DC Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 32kx8bit Access time: 5ms Clock frequency: 20MHz Case: TSSOP-B8 Operating temperature: -40...85°C Mounting: SMD Kind of interface: serial Memory: 256kb EEPROM |
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RQ3C150BCTB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -37A; Idm: -60A; 20W; HSMT8 Power dissipation: 20W Mounting: SMD Kind of package: reel; tape Case: HSMT8 Drain-source voltage: -20V Drain current: -37A On-state resistance: 14mΩ Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -60A |
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RQ3E150BNTB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 60A; 17W; HSMT8 Drain-source voltage: 30V Drain current: 39A Case: HSMT8 Polarisation: unipolar On-state resistance: 7.4mΩ Pulsed drain current: 60A Power dissipation: 17W Kind of channel: enhanced Gate charge: 45nC Gate-source voltage: ±20V Kind of package: reel; tape Mounting: SMD Type of transistor: N-MOSFET |
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BD4936G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: Supervisor Integrated Circuit; voltage detector; CMOS; SSOP5 Case: SSOP5 Mounting: SMD Kind of package: reel; tape Manufacturer series: BD49 Operating temperature: -40...105°C Type of integrated circuit: Supervisor Integrated Circuit Number of channels: 1 Active logical level: low Kind of RESET output: CMOS Integrated circuit features: ±1% accuracy Threshold on-voltage: 3.6V Kind of integrated circuit: voltage detector Supply voltage: 950mV DC...10V DC |
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BZX84C3V3LYT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 3.3V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 5µA |
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BR24G02F-3GTE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 2kbEEPROM; 2-wire,I2C; 256x8bit; 400kHz; SOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: 2-wire; I2C Memory organisation: 256x8bit Clock frequency: 400kHz Mounting: SMD Case: SOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 5ms Kind of package: reel; tape Supply voltage: 1.6...5.5V DC |
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BR24G04F-3GTE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 4kbEEPROM; 2-wire,I2C; 512x8bit; 400kHz; SOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: 2-wire; I2C Memory organisation: 512x8bit Clock frequency: 400kHz Mounting: SMD Case: SOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 5ms Kind of package: reel; tape Supply voltage: 1.6...5.5V DC |
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BR24G08F-3GTE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 8kbEEPROM; 2-wire,I2C; 1kx8bit; 400kHz; SOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: 2-wire; I2C Memory organisation: 1kx8bit Access time: 5ms Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.6...5.5V DC Clock frequency: 400kHz Kind of package: reel; tape |
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R8003KND3TL1 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 9A; 48W; TO252 Mounting: SMD Power dissipation: 48W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 9A Case: TO252 Drain-source voltage: 800V Drain current: 3A On-state resistance: 1.8Ω Type of transistor: N-MOSFET |
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R8003KNXC7G | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 9A; 36W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Pulsed drain current: 9A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: THT Gate charge: 11.5nC Kind of package: tube Kind of channel: enhanced |
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RB705DT146 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SC59,SOT346; reel,tape Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Semiconductor structure: common cathode; double Max. off-state voltage: 40V Type of diode: Schottky rectifying Max. forward voltage: 0.37V Load current: 30mA Max. forward impulse current: 0.2A Leakage current: 1µA |
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BR24T256F-WE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz; SOP8 Supply voltage: 1.6...5.5V DC Mounting: SMD Operating temperature: -40...85°C Memory: 256kb EEPROM Case: SOP8 Type of integrated circuit: EEPROM memory Interface: 2-wire; I2C Kind of memory: EEPROM Memory organisation: 32kx8bit Access time: 5ms Clock frequency: 400kHz Kind of package: reel; tape Kind of interface: serial |
товар відсутній |
RU1C002UNTCL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 200mA; Idm: 0.4A; 150mW
Mounting: SMD
Kind of package: reel; tape
Case: SOT323F
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 0.4A
Polarisation: unipolar
Power dissipation: 0.15W
Type of transistor: N-MOSFET
On-state resistance: 4.8Ω
Drain current: 0.2A
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 200mA; Idm: 0.4A; 150mW
Mounting: SMD
Kind of package: reel; tape
Case: SOT323F
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 0.4A
Polarisation: unipolar
Power dissipation: 0.15W
Type of transistor: N-MOSFET
On-state resistance: 4.8Ω
Drain current: 0.2A
Drain-source voltage: 20V
товар відсутній
RV1C002UNT2CL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 150mA; Idm: 0.6A; 100mW
Mounting: SMD
Kind of package: reel; tape
Case: X2-DFN0806-3
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 0.6A
Polarisation: unipolar
Power dissipation: 0.1W
Type of transistor: N-MOSFET
On-state resistance: 11.4Ω
Drain current: 0.15A
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 150mA; Idm: 0.6A; 100mW
Mounting: SMD
Kind of package: reel; tape
Case: X2-DFN0806-3
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 0.6A
Polarisation: unipolar
Power dissipation: 0.1W
Type of transistor: N-MOSFET
On-state resistance: 11.4Ω
Drain current: 0.15A
Drain-source voltage: 20V
товар відсутній
RV3C002UNT2CL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 150mA; Idm: 600A; 100mW
Mounting: SMD
Kind of package: reel; tape
Case: X2-DFN0604-3
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 600A
Polarisation: unipolar
Power dissipation: 0.1W
Type of transistor: N-MOSFET
On-state resistance: 5.4Ω
Drain current: 0.15A
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 150mA; Idm: 600A; 100mW
Mounting: SMD
Kind of package: reel; tape
Case: X2-DFN0604-3
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 600A
Polarisation: unipolar
Power dissipation: 0.1W
Type of transistor: N-MOSFET
On-state resistance: 5.4Ω
Drain current: 0.15A
Drain-source voltage: 20V
товар відсутній
BZX84C10VLYT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
товар відсутній
RB085T-60HZC9 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 5Ax2; ITO220AB,TO220FN; tube
Mounting: THT
Case: ITO220AB; TO220FN
Max. off-state voltage: 60V
Max. forward voltage: 0.58V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.3mA
Kind of package: tube
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 5Ax2; ITO220AB,TO220FN; tube
Mounting: THT
Case: ITO220AB; TO220FN
Max. off-state voltage: 60V
Max. forward voltage: 0.58V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.3mA
Kind of package: tube
Type of diode: Schottky rectifying
товар відсутній
DTA113ZCAT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
товар відсутній
DTA113ZKAT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
товар відсутній
DTA113ZU3T106 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
товар відсутній
BD4832G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; voltage detector; open drain
Mounting: SMD
Case: SSOP5
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: Supervisor Integrated Circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.2V
Manufacturer series: BD48
Kind of integrated circuit: voltage detector
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; voltage detector; open drain
Mounting: SMD
Case: SSOP5
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: Supervisor Integrated Circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.2V
Manufacturer series: BD48
Kind of integrated circuit: voltage detector
товар відсутній
BU4832F-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; voltage detector; open drain
Mounting: SMD
Case: SOP4
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: Supervisor Integrated Circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.2V
Manufacturer series: BU48
Kind of integrated circuit: voltage detector
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; voltage detector; open drain
Mounting: SMD
Case: SOP4
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: Supervisor Integrated Circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.2V
Manufacturer series: BU48
Kind of integrated circuit: voltage detector
товар відсутній
BU4832G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; voltage detector; open drain
Mounting: SMD
Case: SSOP5
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: Supervisor Integrated Circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.2V
Manufacturer series: BU48
Kind of integrated circuit: voltage detector
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; voltage detector; open drain
Mounting: SMD
Case: SSOP5
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: Supervisor Integrated Circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.2V
Manufacturer series: BU48
Kind of integrated circuit: voltage detector
товар відсутній
CDZVT2R10B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 10V; SMD; reel,tape; SOD923; single diode
Mounting: SMD
Case: SOD923
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 10V
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 10V; SMD; reel,tape; SOD923; single diode
Mounting: SMD
Case: SOD923
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 10V
Leakage current: 0.1µA
товар відсутній
CDZVT2R11B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 11V; SMD; reel,tape; SOD923; single diode
Mounting: SMD
Case: SOD923
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 11V
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 11V; SMD; reel,tape; SOD923; single diode
Mounting: SMD
Case: SOD923
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 11V
Leakage current: 0.1µA
товар відсутній
CDZVT2R13B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 13V; SMD; reel,tape; SOD923; single diode
Mounting: SMD
Case: SOD923
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 13V
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 13V; SMD; reel,tape; SOD923; single diode
Mounting: SMD
Case: SOD923
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 13V
Leakage current: 0.1µA
товар відсутній
CDZVT2R15B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 15V; SMD; reel,tape; SOD923; single diode
Mounting: SMD
Case: SOD923
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 15V
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 15V; SMD; reel,tape; SOD923; single diode
Mounting: SMD
Case: SOD923
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 15V
Leakage current: 0.1µA
товар відсутній
CDZVT2R16B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 16V; SMD; reel,tape; SOD923; single diode
Mounting: SMD
Case: SOD923
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 16V
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 16V; SMD; reel,tape; SOD923; single diode
Mounting: SMD
Case: SOD923
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 16V
Leakage current: 0.1µA
товар відсутній
CDZVT2R2.2B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 2.2V; SMD; reel,tape; SOD923; single diode
Mounting: SMD
Case: SOD923
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 2.2V
Leakage current: 120µA
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 2.2V; SMD; reel,tape; SOD923; single diode
Mounting: SMD
Case: SOD923
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 2.2V
Leakage current: 120µA
товар відсутній
CDZVT2R3.0B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 3V; SMD; reel,tape; SOD923; single diode; 50uA
Mounting: SMD
Case: SOD923
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 3V
Leakage current: 50µA
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 3V; SMD; reel,tape; SOD923; single diode; 50uA
Mounting: SMD
Case: SOD923
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 3V
Leakage current: 50µA
товар відсутній
CDZVT2R3.9B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 3.9V; SMD; reel,tape; SOD923; single diode; 5uA
Mounting: SMD
Case: SOD923
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 3.9V
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 3.9V; SMD; reel,tape; SOD923; single diode; 5uA
Mounting: SMD
Case: SOD923
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 3.9V
Leakage current: 5µA
товар відсутній
CDZVT2R7.5B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 7.5V; SMD; reel,tape; SOD923; single diode
Mounting: SMD
Case: SOD923
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 7.5V
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 7.5V; SMD; reel,tape; SOD923; single diode
Mounting: SMD
Case: SOD923
Tolerance: ±2%
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 7.5V
Leakage current: 0.5µA
товар відсутній
RF305BM6SFHTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
товар відсутній
RF305BM6STL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
товар відсутній
BU4312F-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; voltage detector; CMOS; SSOP5
Mounting: SMD
Case: SSOP5
Operating temperature: -40...125°C
Manufacturer series: BU43
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: Supervisor Integrated Circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 1.2V
Kind of integrated circuit: voltage detector
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; voltage detector; CMOS; SSOP5
Mounting: SMD
Case: SSOP5
Operating temperature: -40...125°C
Manufacturer series: BU43
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: Supervisor Integrated Circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 1.2V
Kind of integrated circuit: voltage detector
товар відсутній
BZX84C22VLYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 22V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Mounting: SMD
Tolerance: ±6%
Application: automotive industry
Leakage current: 0.1µA
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 22V
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 22V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Mounting: SMD
Tolerance: ±6%
Application: automotive industry
Leakage current: 0.1µA
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 22V
товар відсутній
RSX101MM-30TFTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 0.2mA
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.39V
Load current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 0.2mA
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.39V
Load current: 1A
товар відсутній
RSX101MM-30TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 0.2mA
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.39V
Load current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 0.2mA
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.39V
Load current: 1A
товар відсутній
IMB11AT110 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
товар відсутній
RRR040P03FRATL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -16A; 1W; SOT346
Mounting: SMD
Application: automotive industry
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -16A
Case: SOT346
Drain-source voltage: -30V
Drain current: -4A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -16A; 1W; SOT346
Mounting: SMD
Application: automotive industry
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -16A
Case: SOT346
Drain-source voltage: -30V
Drain current: -4A
товар відсутній
R6524ENJTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 72A; 245W; D2PAK
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
On-state resistance: 0.185Ω
Type of transistor: N-MOSFET
Power dissipation: 245W
Kind of package: reel; tape
Gate charge: 70nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 72A
Mounting: SMD
Case: D2PAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 72A; 245W; D2PAK
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
On-state resistance: 0.185Ω
Type of transistor: N-MOSFET
Power dissipation: 245W
Kind of package: reel; tape
Gate charge: 70nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 72A
Mounting: SMD
Case: D2PAK
товар відсутній
BR24G16F-3AGTE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; 2-wire,I2C; 2kx8bit; 1MHz; SOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: 2-wire; I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; 2-wire,I2C; 2kx8bit; 1MHz; SOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: 2-wire; I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
товар відсутній
BR24G16FJ-3GTE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; 2-wire,I2C; 2kx8bit; 400kHz; SOP-J8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: 2-wire; I2C
Memory organisation: 2kx8bit
Clock frequency: 400kHz
Mounting: SMD
Case: SOP-J8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; 2-wire,I2C; 2kx8bit; 400kHz; SOP-J8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: 2-wire; I2C
Memory organisation: 2kx8bit
Clock frequency: 400kHz
Mounting: SMD
Case: SOP-J8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
товар відсутній
BR24G16FVJ-3AGTE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; 2-wire,I2C; 2kx8bit; 1MHz; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: 2-wire; I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP-B8J
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; 2-wire,I2C; 2kx8bit; 1MHz; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: 2-wire; I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP-B8J
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
товар відсутній
BR24G16FVM-3GTTR |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; 2-wire,I2C; 2kx8bit; 400kHz; MSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: 2-wire; I2C
Memory organisation: 2kx8bit
Clock frequency: 400kHz
Mounting: SMD
Case: MSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; 2-wire,I2C; 2kx8bit; 400kHz; MSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: 2-wire; I2C
Memory organisation: 2kx8bit
Clock frequency: 400kHz
Mounting: SMD
Case: MSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
товар відсутній
BR24G16FVT-3AGE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; 2-wire,I2C; 2kx8bit; 1MHz; TSSOP-B8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: 2-wire; I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP-B8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; 2-wire,I2C; 2kx8bit; 1MHz; TSSOP-B8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: 2-wire; I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP-B8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
товар відсутній
BR24G16FVT-3GE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; 2-wire,I2C; 2kx8bit; 400kHz; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: 2-wire; I2C
Memory organisation: 2kx8bit
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP-B8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; 2-wire,I2C; 2kx8bit; 400kHz; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: 2-wire; I2C
Memory organisation: 2kx8bit
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP-B8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
товар відсутній
BR24G16NUX-3ATTR |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; 2-wire,I2C; 2kx8bit; 1MHz; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: 2-wire; I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: VSON08AX2030
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; 2-wire,I2C; 2kx8bit; 1MHz; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: 2-wire; I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: VSON08AX2030
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
товар відсутній
BR24G16NUX-3TTR |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; 2-wire,I2C; 2kx8bit; 400kHz; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: 2-wire; I2C
Memory organisation: 2kx8bit
Clock frequency: 400kHz
Mounting: SMD
Case: VSON008X2030
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; 2-wire,I2C; 2kx8bit; 400kHz; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: 2-wire; I2C
Memory organisation: 2kx8bit
Clock frequency: 400kHz
Mounting: SMD
Case: VSON008X2030
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
товар відсутній
BZX84C6V8LYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 6.8V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 6.8V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
Application: automotive industry
товар відсутній
RRL035P03FRATR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363
Mounting: SMD
Application: automotive industry
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 50mΩ
Drain current: -3.5A
Kind of package: reel; tape
Drain-source voltage: -30V
Features of semiconductor devices: ESD protected gate
Gate charge: 14nC
Case: SOT363
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -14A
Power dissipation: 1W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363
Mounting: SMD
Application: automotive industry
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 50mΩ
Drain current: -3.5A
Kind of package: reel; tape
Drain-source voltage: -30V
Features of semiconductor devices: ESD protected gate
Gate charge: 14nC
Case: SOT363
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -14A
Power dissipation: 1W
товар відсутній
RRL035P03TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363
Mounting: SMD
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 50mΩ
Drain current: -3.5A
Kind of package: reel; tape
Drain-source voltage: -30V
Features of semiconductor devices: ESD protected gate
Gate charge: 8nC
Case: SOT363
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -14A
Power dissipation: 1W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363
Mounting: SMD
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 50mΩ
Drain current: -3.5A
Kind of package: reel; tape
Drain-source voltage: -30V
Features of semiconductor devices: ESD protected gate
Gate charge: 8nC
Case: SOT363
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -14A
Power dissipation: 1W
товар відсутній
SML-212YTT86 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 0805; yellow; 22÷63mcd; 2x1.25x0.8mm; 2.05V; 20mA; 75mW
Type of diode: LED
Mounting: SMD
Case: 0805
LED colour: yellow
Luminosity: 22...63mcd
Dimensions: 2x1.25x0.8mm
LED current: 20mA
Wavelength: 584...590nm
LED lens: transparent
Power: 75mW
Front: flat
Operating voltage: 2.05V
Category: SMD colour LEDs
Description: LED; SMD; 0805; yellow; 22÷63mcd; 2x1.25x0.8mm; 2.05V; 20mA; 75mW
Type of diode: LED
Mounting: SMD
Case: 0805
LED colour: yellow
Luminosity: 22...63mcd
Dimensions: 2x1.25x0.8mm
LED current: 20mA
Wavelength: 584...590nm
LED lens: transparent
Power: 75mW
Front: flat
Operating voltage: 2.05V
на замовлення 26 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 44.15 грн |
15+ | 24.89 грн |
25+ | 16.55 грн |
BR24G256F-3GTE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz; SOP8
Kind of package: reel; tape
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 400kHz
Case: SOP8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz; SOP8
Kind of package: reel; tape
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 400kHz
Case: SOP8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
товар відсутній
BR24G256FJ-3AGTE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 1MHz; SOP-J8
Kind of package: reel; tape
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 1MHz
Case: SOP-J8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 1MHz; SOP-J8
Kind of package: reel; tape
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 1MHz
Case: SOP-J8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
товар відсутній
BR24G256FJ-3GTE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz
Kind of package: reel; tape
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 400kHz
Case: SOP-J8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz
Kind of package: reel; tape
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 400kHz
Case: SOP-J8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
товар відсутній
BR24G256FJ-5E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 1MHz; SOP-J8
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 1MHz
Case: SOP-J8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 1MHz; SOP-J8
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 1MHz
Case: SOP-J8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
товар відсутній
BR24G256FVT-3GE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz
Kind of package: reel; tape
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 400kHz
Case: TSSOP-B8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz
Kind of package: reel; tape
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 400kHz
Case: TSSOP-B8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
товар відсутній
BR24G256NUX-5TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 1MHz; serial
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 1MHz
Case: VSON08AX2030
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 1MHz; serial
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 1MHz
Case: VSON08AX2030
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
товар відсутній
BR25G256FJ-3GE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 20MHz; SOP-J8
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 20MHz
Case: SOP-J8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 20MHz; SOP-J8
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 20MHz
Case: SOP-J8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
товар відсутній
BR25G256FVT-3GE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 20MHz; TSSOP-B8
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 20MHz
Case: TSSOP-B8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 20MHz; TSSOP-B8
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 20MHz
Case: TSSOP-B8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
товар відсутній
RQ3C150BCTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -37A; Idm: -60A; 20W; HSMT8
Power dissipation: 20W
Mounting: SMD
Kind of package: reel; tape
Case: HSMT8
Drain-source voltage: -20V
Drain current: -37A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -60A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -37A; Idm: -60A; 20W; HSMT8
Power dissipation: 20W
Mounting: SMD
Kind of package: reel; tape
Case: HSMT8
Drain-source voltage: -20V
Drain current: -37A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -60A
товар відсутній
RQ3E150BNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 60A; 17W; HSMT8
Drain-source voltage: 30V
Drain current: 39A
Case: HSMT8
Polarisation: unipolar
On-state resistance: 7.4mΩ
Pulsed drain current: 60A
Power dissipation: 17W
Kind of channel: enhanced
Gate charge: 45nC
Gate-source voltage: ±20V
Kind of package: reel; tape
Mounting: SMD
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 60A; 17W; HSMT8
Drain-source voltage: 30V
Drain current: 39A
Case: HSMT8
Polarisation: unipolar
On-state resistance: 7.4mΩ
Pulsed drain current: 60A
Power dissipation: 17W
Kind of channel: enhanced
Gate charge: 45nC
Gate-source voltage: ±20V
Kind of package: reel; tape
Mounting: SMD
Type of transistor: N-MOSFET
товар відсутній
BD4936G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; voltage detector; CMOS; SSOP5
Case: SSOP5
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: BD49
Operating temperature: -40...105°C
Type of integrated circuit: Supervisor Integrated Circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Threshold on-voltage: 3.6V
Kind of integrated circuit: voltage detector
Supply voltage: 950mV DC...10V DC
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; voltage detector; CMOS; SSOP5
Case: SSOP5
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: BD49
Operating temperature: -40...105°C
Type of integrated circuit: Supervisor Integrated Circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Threshold on-voltage: 3.6V
Kind of integrated circuit: voltage detector
Supply voltage: 950mV DC...10V DC
товар відсутній
BZX84C3V3LYT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
товар відсутній
BR24G02F-3GTE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; 2-wire,I2C; 256x8bit; 400kHz; SOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: 2-wire; I2C
Memory organisation: 256x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: SOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; 2-wire,I2C; 256x8bit; 400kHz; SOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: 2-wire; I2C
Memory organisation: 256x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: SOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
товар відсутній
BR24G04F-3GTE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; 2-wire,I2C; 512x8bit; 400kHz; SOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: 2-wire; I2C
Memory organisation: 512x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: SOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; 2-wire,I2C; 512x8bit; 400kHz; SOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: 2-wire; I2C
Memory organisation: 512x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: SOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
товар відсутній
BR24G08F-3GTE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; 2-wire,I2C; 1kx8bit; 400kHz; SOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: 2-wire; I2C
Memory organisation: 1kx8bit
Access time: 5ms
Case: SOP8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.6...5.5V DC
Clock frequency: 400kHz
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; 2-wire,I2C; 1kx8bit; 400kHz; SOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: 2-wire; I2C
Memory organisation: 1kx8bit
Access time: 5ms
Case: SOP8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.6...5.5V DC
Clock frequency: 400kHz
Kind of package: reel; tape
товар відсутній
R8003KND3TL1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 9A; 48W; TO252
Mounting: SMD
Power dissipation: 48W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 9A
Case: TO252
Drain-source voltage: 800V
Drain current: 3A
On-state resistance: 1.8Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 9A; 48W; TO252
Mounting: SMD
Power dissipation: 48W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 9A
Case: TO252
Drain-source voltage: 800V
Drain current: 3A
On-state resistance: 1.8Ω
Type of transistor: N-MOSFET
товар відсутній
R8003KNXC7G |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 9A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 9A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: THT
Gate charge: 11.5nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 9A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 9A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: THT
Gate charge: 11.5nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
RB705DT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SC59,SOT346; reel,tape
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Max. off-state voltage: 40V
Type of diode: Schottky rectifying
Max. forward voltage: 0.37V
Load current: 30mA
Max. forward impulse current: 0.2A
Leakage current: 1µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SC59,SOT346; reel,tape
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Max. off-state voltage: 40V
Type of diode: Schottky rectifying
Max. forward voltage: 0.37V
Load current: 30mA
Max. forward impulse current: 0.2A
Leakage current: 1µA
товар відсутній
BR24T256F-WE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz; SOP8
Supply voltage: 1.6...5.5V DC
Mounting: SMD
Operating temperature: -40...85°C
Memory: 256kb EEPROM
Case: SOP8
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of package: reel; tape
Kind of interface: serial
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz; SOP8
Supply voltage: 1.6...5.5V DC
Mounting: SMD
Operating temperature: -40...85°C
Memory: 256kb EEPROM
Case: SOP8
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of package: reel; tape
Kind of interface: serial
товар відсутній