Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (100235) > Сторінка 1658 з 1671
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
2SCR554P5T100 | ROHM SEMICONDUCTOR |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 1.5A; 500mW; SC62,SOT89 Frequency: 300MHz Case: SC62; SOT89 Polarisation: bipolar Power dissipation: 0.5W Type of transistor: NPN Collector current: 1.5A Current gain: 120...390 Collector-emitter voltage: 80V Kind of package: reel; tape Mounting: SMD |
товар відсутній |
|||||||||||||||||
|
|
2SCR554PFRAT100 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 1.5A; 500mW; SC62,SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 0.5W Case: SC62; SOT89 Current gain: 120...390 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товар відсутній |
|||||||||||||||||
|
|
2SCR372P5T100Q | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 120V; 0.7A; 500mW; SC62,SOT89 Mounting: SMD Collector current: 0.7A Type of transistor: NPN Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape Case: SC62; SOT89 Frequency: 390MHz Collector-emitter voltage: 120V Current gain: 120...270 |
товар відсутній |
|||||||||||||||||
| RB558VYM150FHTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 150V; 0.5A; SOD323HE; reel,tape Mounting: SMD Case: SOD323HE Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 150V Max. forward voltage: 0.95V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 3A Leakage current: 0.5µA |
товар відсутній |
||||||||||||||||||
| RGT40NS65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 20A; 70W; LPDS Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 70W Case: LPDS Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Turn-on time: 51ns Turn-off time: 204ns Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |
||||||||||||||||||
 |
KDZVTR2.0B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 2V; SMD; reel,tape; SOD123F; single diode; 200uA Type of diode: Zener Power dissipation: 1W Zener voltage: 2V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 0.2mA |
товар відсутній |
|||||||||||||||||
|
|
RBR3MM30ATR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 3A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: SOD123F Max. forward voltage: 0.51V Leakage current: 0.1mA |
товар відсутній |
|||||||||||||||||
|
|
RBR3MM60ATFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.66V Case: SOD123F Kind of package: reel; tape Leakage current: 0.1mA Max. forward impulse current: 30A |
товар відсутній |
|||||||||||||||||
|
|
RBR3MM60ATR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.66V Case: SOD123F Kind of package: reel; tape Leakage current: 0.1mA Max. forward impulse current: 30A |
товар відсутній |
|||||||||||||||||
|
|
RBR3MM60BTFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.61V Case: SOD123F Kind of package: reel; tape Leakage current: 120µA Max. forward impulse current: 30A |
товар відсутній |
|||||||||||||||||
|
|
RBR3MM60BTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.61V Case: SOD123F Kind of package: reel; tape Leakage current: 120µA Max. forward impulse current: 30A |
товар відсутній |
|||||||||||||||||
| R6011END3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 22A; 124W; TO252 Mounting: SMD Pulsed drain current: 22A Power dissipation: 124W Gate charge: 32nC Polarisation: unipolar Drain current: 11A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252 On-state resistance: 720mΩ |
товар відсутній |
||||||||||||||||||
| R6011KND3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 124W; TO252 Mounting: SMD Pulsed drain current: 33A Power dissipation: 124W Gate charge: 22nC Polarisation: unipolar Drain current: 11A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252 On-state resistance: 720mΩ |
товар відсутній |
||||||||||||||||||
 |
RE1C002UNTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.2A; Idm: 0.4A; 0.15W; SC89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.2A Pulsed drain current: 0.4A Power dissipation: 0.15W Case: SC89 Gate-source voltage: ±8V On-state resistance: 1.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 2155 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
 |
DTB123EKT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346 Kind of package: reel; tape Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Mounting: SMD Case: SC59; SOT346 Frequency: 200MHz Collector-emitter voltage: 50V Current gain: 39 Collector current: 0.5A |
товар відсутній |
|||||||||||||||||
|
|
DTB123TKT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 40V; 0.5A; 200mW; SC59,SOT346; 2.2kΩ Mounting: SMD Case: SC59; SOT346 Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Frequency: 200MHz Collector-emitter voltage: 40V Current gain: 100...600 Collector current: 0.5A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar |
товар відсутній |
|||||||||||||||||
 |
DTB123YCT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
товар відсутній |
|||||||||||||||||
|
|
DTB123YKT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
товар відсутній |
|||||||||||||||||
|
|
DTB123YUT106 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
товар відсутній |
|||||||||||||||||
| RTF025N03FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 0.8W Case: TUMT3 Gate-source voltage: ±12V On-state resistance: 98mΩ Mounting: SMD Gate charge: 3.7nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||||
| RTF025N03TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 0.8W Case: TUMT3 Gate-source voltage: ±12V On-state resistance: 98mΩ Mounting: SMD Gate charge: 3.7nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||||
| RSJ400N10TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 80A; 50W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 50W Drain-source voltage: 100V Drain current: 40A On-state resistance: 30mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 90nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A |
товар відсутній |
||||||||||||||||||
 |
SCS106AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; 65W; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 0.6kV Load current: 6A Max. load current: 29A Semiconductor structure: single diode Max. forward voltage: 1.7V Case: TO220AC Kind of package: tube Max. forward impulse current: 86A Power dissipation: 65W Heatsink thickness: max. 1.27mm |
товар відсутній |
|||||||||||||||||
|
|
SCS108AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220AC; Ufmax: 1.7V Power dissipation: 75W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Heatsink thickness: max. 1.27mm Mounting: THT Case: TO220AC Max. off-state voltage: 0.6kV Max. load current: 35A Max. forward voltage: 1.7V Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 110A |
товар відсутній |
|||||||||||||||||
|
|
SCS110AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; 83W; TO220AC; tube Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Heatsink thickness: max. 1.27mm Mounting: THT Case: TO220AC Max. off-state voltage: 0.6kV Max. load current: 42A Max. forward voltage: 1.7V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 160A Power dissipation: 83W |
товар відсутній |
|||||||||||||||||
|
|
SCS206AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; 51W; tube Mounting: THT Case: TO220AC Kind of package: tube Technology: SiC Power dissipation: 51W Max. forward impulse current: 90A Type of diode: Schottky rectifying Max. off-state voltage: 650V Max. load current: 27A Max. forward voltage: 1.55V Load current: 6A Semiconductor structure: single diode |
товар відсутній |
|||||||||||||||||
|
|
SCS210AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 78W; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Max. load current: 44A Power dissipation: 78W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 150A Max. forward voltage: 1.55V |
товар відсутній |
|||||||||||||||||
|
|
SCS212AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 93W; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 12A Max. load current: 52A Power dissipation: 93W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 170A Max. forward voltage: 1.55V |
товар відсутній |
|||||||||||||||||
|
|
SCS220AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 136W; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Max. load current: 81A Power dissipation: 136W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 260A Max. forward voltage: 1.55V |
товар відсутній |
|||||||||||||||||
| DTA044EEBTL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC89 Current gain: 80 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
товар відсутній |
||||||||||||||||||
| RQ3E100BNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 40A; 15W; HSMT8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Pulsed drain current: 40A Power dissipation: 15W Case: HSMT8 Gate-source voltage: ±20V On-state resistance: 15.3mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||||
|
|
2SD2704KT146 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 0.3A; 200mW; SC59,SOT346 Power dissipation: 0.2W Mounting: SMD Kind of package: reel; tape Case: SC59; SOT346 Polarisation: bipolar Frequency: 35MHz Collector-emitter voltage: 20V Current gain: 820...2700 Collector current: 0.3A Type of transistor: NPN |
товар відсутній |
|||||||||||||||||
|
|
SSTA28T116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; Darlington; 80V; 0.3A; 200mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 0.3A Power dissipation: 0.2W Case: SOT23 Current gain: 10k Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
на замовлення 7140 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
|
RBR2MM40BTFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 2A; SOD123F; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Max. forward impulse current: 30A Leakage current: 80µA Type of diode: Schottky rectifying Max. off-state voltage: 40V Max. forward voltage: 0.55V Load current: 2A Semiconductor structure: single diode |
товар відсутній |
|||||||||||||||||
|
|
RBR2MM40BTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 2A; SOD123F; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Max. forward impulse current: 30A Leakage current: 80µA Type of diode: Schottky rectifying Max. off-state voltage: 40V Max. forward voltage: 0.55V Load current: 2A Semiconductor structure: single diode |
товар відсутній |
|||||||||||||||||
| RBS3LAM40BTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 3A; SOD128; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: SOD128 Max. off-state voltage: 20V Max. forward voltage: 0.45V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 60A Leakage current: 0.6mA |
товар відсутній |
||||||||||||||||||
 |
RQ5H020SPTL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -45V; -2A; Idm: -8A; 1W; TSMT3 Power dissipation: 1W Mounting: SMD Kind of package: reel; tape Case: TSMT3 Polarisation: unipolar Gate charge: 4.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -8A Drain-source voltage: -45V Drain current: -2A On-state resistance: 0.28Ω Type of transistor: P-MOSFET |
на замовлення 2842 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| RQ6L020SPTCR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2A; Idm: -8A; 1.25W; TSMT6 Mounting: SMD Case: TSMT6 Drain-source voltage: -60V Drain current: -2A On-state resistance: 266mΩ Type of transistor: P-MOSFET Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -8A |
товар відсутній |
||||||||||||||||||
|
|
2SC3838KT146N | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 11V; 50mA; 200mW; SC59,SOT346 Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Frequency: 3.2GHz Type of transistor: NPN Collector current: 50mA Current gain: 56...120 Collector-emitter voltage: 11V Power dissipation: 0.2W Polarisation: bipolar |
товар відсутній |
|||||||||||||||||
|
|
2SC3838KT146P | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 11V; 50mA; 200mW; SOT346 Case: SOT346 Mounting: SMD Kind of package: reel; tape Frequency: 3.2GHz Type of transistor: NPN Collector current: 50mA Current gain: 56...270 Collector-emitter voltage: 11V Power dissipation: 0.2W Kind of transistor: RF Polarisation: bipolar |
товар відсутній |
|||||||||||||||||
|
|
KDZLVTFTR120 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 120V; SMD; reel,tape; SOD123F; single diode; 5uA Type of diode: Zener Power dissipation: 1W Zener voltage: 120V Mounting: SMD Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 5µA |
товар відсутній |
|||||||||||||||||
 |
SML812BCTT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 1305; blue; 22÷56mcd; 3.4x1.25x1.1mm; 3.3V; 20mA; 80mW Type of diode: LED Mounting: SMD Case: 1305 LED colour: blue Luminosity: 22...56mcd Dimensions: 3.4x1.25x1.1mm LED current: 20mA Wavelength: 464...476nm LED lens: transparent Power: 80mW Front: flat Operating voltage: 3.3V |
товар відсутній |
|||||||||||||||||
 |
RBR2L60BDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 2A; DO214AC,SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 2A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.52V Max. forward impulse current: 50A Leakage current: 0.15mA Kind of package: reel; tape |
товар відсутній |
|||||||||||||||||
|
|
RBR3L60BDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; DO214AC,SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.56V Max. forward impulse current: 50A Leakage current: 0.15mA Kind of package: reel; tape |
товар відсутній |
|||||||||||||||||
| 2SB1710TL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SC96 Mounting: SMD Case: SC96 Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape Frequency: 320MHz Collector-emitter voltage: 30V Current gain: 270...680 Collector current: 1A Type of transistor: PNP |
товар відсутній |
||||||||||||||||||
|
|
2SD1484KT146R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.5A; 200mW; SC59,SOT346 Kind of package: reel; tape Mounting: SMD Frequency: 250MHz Case: SC59; SOT346 Polarisation: bipolar Collector-emitter voltage: 50V Current gain: 180...390 Collector current: 0.5A Type of transistor: NPN Power dissipation: 0.2W |
товар відсутній |
|||||||||||||||||
|
|
2SCR533P5T100 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 3A; 500mW; SC62,SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 0.5W Case: SC62; SOT89 Current gain: 180...450 Mounting: SMD Kind of package: reel; tape Frequency: 320MHz |
товар відсутній |
|||||||||||||||||
|
|
2SCR553P5T100 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 2A; 500mW; SC62,SOT89 Mounting: SMD Case: SC62; SOT89 Frequency: 360MHz Collector-emitter voltage: 50V Current gain: 180...450 Collector current: 2A Type of transistor: NPN Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape |
на замовлення 941 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| 2SCR544PFRAT100 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 2.5A; 500mW; SC96 Mounting: SMD Collector current: 2.5A Type of transistor: NPN Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape Case: SC96 Frequency: 280MHz Collector-emitter voltage: 80V Current gain: 120...390 |
товар відсутній |
||||||||||||||||||
|
|
2SCR552PFRAT100 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 3A; 500mW; SC62,SOT89 Frequency: 280MHz Case: SC62; SOT89 Polarisation: bipolar Power dissipation: 0.5W Type of transistor: NPN Collector current: 3A Current gain: 200...500 Collector-emitter voltage: 30V Kind of package: reel; tape Mounting: SMD |
товар відсутній |
|||||||||||||||||
|
|
2SCR553PFRAT100 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 2A; 500mW; SC62,SOT89 Frequency: 360MHz Case: SC62; SOT89 Polarisation: bipolar Power dissipation: 0.5W Type of transistor: NPN Collector current: 2A Current gain: 180...450 Collector-emitter voltage: 50V Kind of package: reel; tape Mounting: SMD |
товар відсутній |
|||||||||||||||||
 |
BU2500FV-E2 | ROHM SEMICONDUCTOR |
 Category: D/A converters - integrated circuitsDescription: IC: D/A converter; 8bit; Ch: 12; 4.5÷5.5V; SSOP20 Operating voltage: 4.5...5.5V Type of integrated circuit: D/A converter Interface: 3-wire Converter resolution: 8bit Number of channels: 12 Integrated circuit features: rail-to-rail output Mounting: SMD Case: SSOP20 |
товар відсутній |
|||||||||||||||||
|
|
RF201L2SDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A Mounting: SMD Case: SMA Max. off-state voltage: 200V Max. forward voltage: 0.87V Load current: 2A Semiconductor structure: single diode Reverse recovery time: 25ns Max. forward impulse current: 20A Kind of package: reel; tape Type of diode: rectifying |
товар відсутній |
|||||||||||||||||
|
|
RB050L-60DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; DO214AC,SMA; reel,tape Case: DO214AC; SMA Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 60V Max. forward voltage: 0.56V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 70A Leakage current: 0.1mA |
товар відсутній |
|||||||||||||||||
|
|
RB058L-60DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; DO214AC,SMA; reel,tape Kind of package: reel; tape Max. off-state voltage: 60V Max. forward voltage: 0.64V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 120A Leakage current: 4µA Type of diode: Schottky rectifying Mounting: SMD Case: DO214AC; SMA |
на замовлення 1073 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
 |
RB531SM-30FHT2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC79,SOD523; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.35V Case: SC79; SOD523 Kind of package: reel; tape Leakage current: 10µA Max. forward impulse current: 1A |
товар відсутній |
|||||||||||||||||
| RB095BGE-40TL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 3Ax2; DPAK,SC63,TO252 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.55V Case: DPAK; SC63; TO252 Kind of package: reel; tape Leakage current: 0.1mA Max. forward impulse current: 50A |
товар відсутній |
||||||||||||||||||
| RB095BGE-60TL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3Ax2; DPAK,SC63,TO252 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.58V Case: DPAK; SC63; TO252 Kind of package: reel; tape Leakage current: 0.3mA Max. forward impulse current: 50A |
товар відсутній |
||||||||||||||||||
| RB095BM-40FHTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 3Ax2; DPAK,SC63,TO252 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.55V Case: DPAK; SC63; TO252 Kind of package: reel; tape Leakage current: 0.1mA Max. forward impulse current: 50A |
товар відсутній |
||||||||||||||||||
| RB095BM-60FHTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3Ax2; DPAK,SC63,TO252 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.58V Case: DPAK; SC63; TO252 Kind of package: reel; tape Leakage current: 0.3mA Max. forward impulse current: 50A |
товар відсутній |
| 2SCR554P5T100 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 500mW; SC62,SOT89
Frequency: 300MHz
Case: SC62; SOT89
Polarisation: bipolar
Power dissipation: 0.5W
Type of transistor: NPN
Collector current: 1.5A
Current gain: 120...390
Collector-emitter voltage: 80V
Kind of package: reel; tape
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 500mW; SC62,SOT89
Frequency: 300MHz
Case: SC62; SOT89
Polarisation: bipolar
Power dissipation: 0.5W
Type of transistor: NPN
Collector current: 1.5A
Current gain: 120...390
Collector-emitter voltage: 80V
Kind of package: reel; tape
Mounting: SMD
товар відсутній
| 2SCR554PFRAT100 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 500mW; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 120...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 500mW; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 120...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товар відсутній
| 2SCR372P5T100Q |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.7A; 500mW; SC62,SOT89
Mounting: SMD
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC62; SOT89
Frequency: 390MHz
Collector-emitter voltage: 120V
Current gain: 120...270
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.7A; 500mW; SC62,SOT89
Mounting: SMD
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC62; SOT89
Frequency: 390MHz
Collector-emitter voltage: 120V
Current gain: 120...270
товар відсутній
| RB558VYM150FHTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 0.5A; SOD323HE; reel,tape
Mounting: SMD
Case: SOD323HE
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 150V
Max. forward voltage: 0.95V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 3A
Leakage current: 0.5µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 0.5A; SOD323HE; reel,tape
Mounting: SMD
Case: SOD323HE
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 150V
Max. forward voltage: 0.95V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 3A
Leakage current: 0.5µA
товар відсутній
| RGT40NS65DGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 70W; LPDS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 70W
Case: LPDS
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Turn-on time: 51ns
Turn-off time: 204ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 70W; LPDS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 70W
Case: LPDS
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Turn-on time: 51ns
Turn-off time: 204ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| KDZVTR2.0B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 2V; SMD; reel,tape; SOD123F; single diode; 200uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 0.2mA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 2V; SMD; reel,tape; SOD123F; single diode; 200uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 0.2mA
товар відсутній
| RBR3MM30ATR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: SOD123F
Max. forward voltage: 0.51V
Leakage current: 0.1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: SOD123F
Max. forward voltage: 0.51V
Leakage current: 0.1mA
товар відсутній
| RBR3MM60ATFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 30A
товар відсутній
| RBR3MM60ATR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 30A
товар відсутній
| RBR3MM60BTFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.61V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 120µA
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.61V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 120µA
Max. forward impulse current: 30A
товар відсутній
| RBR3MM60BTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.61V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 120µA
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.61V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 120µA
Max. forward impulse current: 30A
товар відсутній
| R6011END3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 22A; 124W; TO252
Mounting: SMD
Pulsed drain current: 22A
Power dissipation: 124W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 720mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 22A; 124W; TO252
Mounting: SMD
Pulsed drain current: 22A
Power dissipation: 124W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 720mΩ
товар відсутній
| R6011KND3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 124W; TO252
Mounting: SMD
Pulsed drain current: 33A
Power dissipation: 124W
Gate charge: 22nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 720mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 124W; TO252
Mounting: SMD
Pulsed drain current: 33A
Power dissipation: 124W
Gate charge: 22nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 720mΩ
товар відсутній
| RE1C002UNTCL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.2A; Idm: 0.4A; 0.15W; SC89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.2A
Pulsed drain current: 0.4A
Power dissipation: 0.15W
Case: SC89
Gate-source voltage: ±8V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.2A; Idm: 0.4A; 0.15W; SC89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.2A
Pulsed drain current: 0.4A
Power dissipation: 0.15W
Case: SC89
Gate-source voltage: ±8V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 2155 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 14.63 грн |
| 33+ | 11.47 грн |
| 39+ | 9.89 грн |
| 62+ | 6.17 грн |
| 100+ | 4.95 грн |
| 355+ | 2.49 грн |
| 500+ | 2.48 грн |
| 974+ | 2.35 грн |
| DTB123EKT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Mounting: SMD
Case: SC59; SOT346
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 39
Collector current: 0.5A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Mounting: SMD
Case: SC59; SOT346
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 39
Collector current: 0.5A
товар відсутній
| DTB123TKT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 40V; 0.5A; 200mW; SC59,SOT346; 2.2kΩ
Mounting: SMD
Case: SC59; SOT346
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Frequency: 200MHz
Collector-emitter voltage: 40V
Current gain: 100...600
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 40V; 0.5A; 200mW; SC59,SOT346; 2.2kΩ
Mounting: SMD
Case: SC59; SOT346
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Frequency: 200MHz
Collector-emitter voltage: 40V
Current gain: 100...600
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
товар відсутній
| DTB123YCT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
товар відсутній
| DTB123YKT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
товар відсутній
| DTB123YUT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
товар відсутній
| RTF025N03FRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±12V
On-state resistance: 98mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±12V
On-state resistance: 98mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RTF025N03TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±12V
On-state resistance: 98mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±12V
On-state resistance: 98mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RSJ400N10TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 80A; 50W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 50W
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 90nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 80A; 50W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 50W
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 90nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
товар відсутній
| SCS106AGC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; 65W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Max. load current: 29A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 86A
Power dissipation: 65W
Heatsink thickness: max. 1.27mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; 65W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Max. load current: 29A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 86A
Power dissipation: 65W
Heatsink thickness: max. 1.27mm
товар відсутній
| SCS108AGC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220AC; Ufmax: 1.7V
Power dissipation: 75W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Heatsink thickness: max. 1.27mm
Mounting: THT
Case: TO220AC
Max. off-state voltage: 0.6kV
Max. load current: 35A
Max. forward voltage: 1.7V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 110A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220AC; Ufmax: 1.7V
Power dissipation: 75W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Heatsink thickness: max. 1.27mm
Mounting: THT
Case: TO220AC
Max. off-state voltage: 0.6kV
Max. load current: 35A
Max. forward voltage: 1.7V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 110A
товар відсутній
| SCS110AGC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; 83W; TO220AC; tube
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Heatsink thickness: max. 1.27mm
Mounting: THT
Case: TO220AC
Max. off-state voltage: 0.6kV
Max. load current: 42A
Max. forward voltage: 1.7V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 160A
Power dissipation: 83W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; 83W; TO220AC; tube
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Heatsink thickness: max. 1.27mm
Mounting: THT
Case: TO220AC
Max. off-state voltage: 0.6kV
Max. load current: 42A
Max. forward voltage: 1.7V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 160A
Power dissipation: 83W
товар відсутній
| SCS206AGC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; 51W; tube
Mounting: THT
Case: TO220AC
Kind of package: tube
Technology: SiC
Power dissipation: 51W
Max. forward impulse current: 90A
Type of diode: Schottky rectifying
Max. off-state voltage: 650V
Max. load current: 27A
Max. forward voltage: 1.55V
Load current: 6A
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; 51W; tube
Mounting: THT
Case: TO220AC
Kind of package: tube
Technology: SiC
Power dissipation: 51W
Max. forward impulse current: 90A
Type of diode: Schottky rectifying
Max. off-state voltage: 650V
Max. load current: 27A
Max. forward voltage: 1.55V
Load current: 6A
Semiconductor structure: single diode
товар відсутній
| SCS210AGC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 78W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 44A
Power dissipation: 78W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 1.55V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 78W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 44A
Power dissipation: 78W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 1.55V
товар відсутній
| SCS212AGC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 93W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Max. load current: 52A
Power dissipation: 93W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 170A
Max. forward voltage: 1.55V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 93W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Max. load current: 52A
Power dissipation: 93W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 170A
Max. forward voltage: 1.55V
товар відсутній
| SCS220AGC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 136W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Max. load current: 81A
Power dissipation: 136W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 260A
Max. forward voltage: 1.55V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 136W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Max. load current: 81A
Power dissipation: 136W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 260A
Max. forward voltage: 1.55V
товар відсутній
| DTA044EEBTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC89
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC89
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
товар відсутній
| RQ3E100BNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 40A; 15W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Pulsed drain current: 40A
Power dissipation: 15W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 40A; 15W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Pulsed drain current: 40A
Power dissipation: 15W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| 2SD2704KT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 0.3A; 200mW; SC59,SOT346
Power dissipation: 0.2W
Mounting: SMD
Kind of package: reel; tape
Case: SC59; SOT346
Polarisation: bipolar
Frequency: 35MHz
Collector-emitter voltage: 20V
Current gain: 820...2700
Collector current: 0.3A
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 0.3A; 200mW; SC59,SOT346
Power dissipation: 0.2W
Mounting: SMD
Kind of package: reel; tape
Case: SC59; SOT346
Polarisation: bipolar
Frequency: 35MHz
Collector-emitter voltage: 20V
Current gain: 820...2700
Collector current: 0.3A
Type of transistor: NPN
товар відсутній
| SSTA28T116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 0.3A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 0.3A
Power dissipation: 0.2W
Case: SOT23
Current gain: 10k
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 0.3A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 0.3A
Power dissipation: 0.2W
Case: SOT23
Current gain: 10k
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
на замовлення 7140 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 7.32 грн |
| 66+ | 5.74 грн |
| 100+ | 3.81 грн |
| 371+ | 2.37 грн |
| 1020+ | 2.24 грн |
| RBR2MM40BTFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Max. forward impulse current: 30A
Leakage current: 80µA
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward voltage: 0.55V
Load current: 2A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Max. forward impulse current: 30A
Leakage current: 80µA
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward voltage: 0.55V
Load current: 2A
Semiconductor structure: single diode
товар відсутній
| RBR2MM40BTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Max. forward impulse current: 30A
Leakage current: 80µA
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward voltage: 0.55V
Load current: 2A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Max. forward impulse current: 30A
Leakage current: 80µA
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward voltage: 0.55V
Load current: 2A
Semiconductor structure: single diode
товар відсутній
| RBS3LAM40BTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 3A; SOD128; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD128
Max. off-state voltage: 20V
Max. forward voltage: 0.45V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 60A
Leakage current: 0.6mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 3A; SOD128; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD128
Max. off-state voltage: 20V
Max. forward voltage: 0.45V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 60A
Leakage current: 0.6mA
товар відсутній
| RQ5H020SPTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -2A; Idm: -8A; 1W; TSMT3
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Case: TSMT3
Polarisation: unipolar
Gate charge: 4.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -8A
Drain-source voltage: -45V
Drain current: -2A
On-state resistance: 0.28Ω
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -2A; Idm: -8A; 1W; TSMT3
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Case: TSMT3
Polarisation: unipolar
Gate charge: 4.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -8A
Drain-source voltage: -45V
Drain current: -2A
On-state resistance: 0.28Ω
Type of transistor: P-MOSFET
на замовлення 2842 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 38.2 грн |
| 82+ | 10.79 грн |
| 225+ | 10.26 грн |
| RQ6L020SPTCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; Idm: -8A; 1.25W; TSMT6
Mounting: SMD
Case: TSMT6
Drain-source voltage: -60V
Drain current: -2A
On-state resistance: 266mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -8A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; Idm: -8A; 1.25W; TSMT6
Mounting: SMD
Case: TSMT6
Drain-source voltage: -60V
Drain current: -2A
On-state resistance: 266mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -8A
товар відсутній
| 2SC3838KT146N |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 11V; 50mA; 200mW; SC59,SOT346
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 3.2GHz
Type of transistor: NPN
Collector current: 50mA
Current gain: 56...120
Collector-emitter voltage: 11V
Power dissipation: 0.2W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 11V; 50mA; 200mW; SC59,SOT346
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 3.2GHz
Type of transistor: NPN
Collector current: 50mA
Current gain: 56...120
Collector-emitter voltage: 11V
Power dissipation: 0.2W
Polarisation: bipolar
товар відсутній
| 2SC3838KT146P |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 11V; 50mA; 200mW; SOT346
Case: SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 3.2GHz
Type of transistor: NPN
Collector current: 50mA
Current gain: 56...270
Collector-emitter voltage: 11V
Power dissipation: 0.2W
Kind of transistor: RF
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 11V; 50mA; 200mW; SOT346
Case: SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 3.2GHz
Type of transistor: NPN
Collector current: 50mA
Current gain: 56...270
Collector-emitter voltage: 11V
Power dissipation: 0.2W
Kind of transistor: RF
Polarisation: bipolar
товар відсутній
| KDZLVTFTR120 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 120V; SMD; reel,tape; SOD123F; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 120V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 120V; SMD; reel,tape; SOD123F; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 120V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 5µA
товар відсутній
| SML812BCTT86 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 1305; blue; 22÷56mcd; 3.4x1.25x1.1mm; 3.3V; 20mA; 80mW
Type of diode: LED
Mounting: SMD
Case: 1305
LED colour: blue
Luminosity: 22...56mcd
Dimensions: 3.4x1.25x1.1mm
LED current: 20mA
Wavelength: 464...476nm
LED lens: transparent
Power: 80mW
Front: flat
Operating voltage: 3.3V
Category: SMD colour LEDs
Description: LED; SMD; 1305; blue; 22÷56mcd; 3.4x1.25x1.1mm; 3.3V; 20mA; 80mW
Type of diode: LED
Mounting: SMD
Case: 1305
LED colour: blue
Luminosity: 22...56mcd
Dimensions: 3.4x1.25x1.1mm
LED current: 20mA
Wavelength: 464...476nm
LED lens: transparent
Power: 80mW
Front: flat
Operating voltage: 3.3V
товар відсутній
| RBR2L60BDDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; DO214AC,SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.52V
Max. forward impulse current: 50A
Leakage current: 0.15mA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; DO214AC,SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.52V
Max. forward impulse current: 50A
Leakage current: 0.15mA
Kind of package: reel; tape
товар відсутній
| RBR3L60BDDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; DO214AC,SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 50A
Leakage current: 0.15mA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; DO214AC,SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 50A
Leakage current: 0.15mA
Kind of package: reel; tape
товар відсутній
| 2SB1710TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SC96
Mounting: SMD
Case: SC96
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 320MHz
Collector-emitter voltage: 30V
Current gain: 270...680
Collector current: 1A
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SC96
Mounting: SMD
Case: SC96
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 320MHz
Collector-emitter voltage: 30V
Current gain: 270...680
Collector current: 1A
Type of transistor: PNP
товар відсутній
| 2SD1484KT146R |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 200mW; SC59,SOT346
Kind of package: reel; tape
Mounting: SMD
Frequency: 250MHz
Case: SC59; SOT346
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 180...390
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.2W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 200mW; SC59,SOT346
Kind of package: reel; tape
Mounting: SMD
Frequency: 250MHz
Case: SC59; SOT346
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 180...390
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.2W
товар відсутній
| 2SCR533P5T100 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 500mW; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 180...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 500mW; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 180...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
товар відсутній
| 2SCR553P5T100 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 500mW; SC62,SOT89
Mounting: SMD
Case: SC62; SOT89
Frequency: 360MHz
Collector-emitter voltage: 50V
Current gain: 180...450
Collector current: 2A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 500mW; SC62,SOT89
Mounting: SMD
Case: SC62; SOT89
Frequency: 360MHz
Collector-emitter voltage: 50V
Current gain: 180...450
Collector current: 2A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
на замовлення 941 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 29.26 грн |
| 100+ | 16.68 грн |
| 104+ | 8.57 грн |
| 284+ | 8.1 грн |
| 2SCR544PFRAT100 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 2.5A; 500mW; SC96
Mounting: SMD
Collector current: 2.5A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC96
Frequency: 280MHz
Collector-emitter voltage: 80V
Current gain: 120...390
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 2.5A; 500mW; SC96
Mounting: SMD
Collector current: 2.5A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC96
Frequency: 280MHz
Collector-emitter voltage: 80V
Current gain: 120...390
товар відсутній
| 2SCR552PFRAT100 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 3A; 500mW; SC62,SOT89
Frequency: 280MHz
Case: SC62; SOT89
Polarisation: bipolar
Power dissipation: 0.5W
Type of transistor: NPN
Collector current: 3A
Current gain: 200...500
Collector-emitter voltage: 30V
Kind of package: reel; tape
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 3A; 500mW; SC62,SOT89
Frequency: 280MHz
Case: SC62; SOT89
Polarisation: bipolar
Power dissipation: 0.5W
Type of transistor: NPN
Collector current: 3A
Current gain: 200...500
Collector-emitter voltage: 30V
Kind of package: reel; tape
Mounting: SMD
товар відсутній
| 2SCR553PFRAT100 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 500mW; SC62,SOT89
Frequency: 360MHz
Case: SC62; SOT89
Polarisation: bipolar
Power dissipation: 0.5W
Type of transistor: NPN
Collector current: 2A
Current gain: 180...450
Collector-emitter voltage: 50V
Kind of package: reel; tape
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 500mW; SC62,SOT89
Frequency: 360MHz
Case: SC62; SOT89
Polarisation: bipolar
Power dissipation: 0.5W
Type of transistor: NPN
Collector current: 2A
Current gain: 180...450
Collector-emitter voltage: 50V
Kind of package: reel; tape
Mounting: SMD
товар відсутній
| BU2500FV-E2 | |
|
Виробник: ROHM SEMICONDUCTOR
Category: D/A converters - integrated circuits
Description: IC: D/A converter; 8bit; Ch: 12; 4.5÷5.5V; SSOP20
Operating voltage: 4.5...5.5V
Type of integrated circuit: D/A converter
Interface: 3-wire
Converter resolution: 8bit
Number of channels: 12
Integrated circuit features: rail-to-rail output
Mounting: SMD
Case: SSOP20
Category: D/A converters - integrated circuits
Description: IC: D/A converter; 8bit; Ch: 12; 4.5÷5.5V; SSOP20
Operating voltage: 4.5...5.5V
Type of integrated circuit: D/A converter
Interface: 3-wire
Converter resolution: 8bit
Number of channels: 12
Integrated circuit features: rail-to-rail output
Mounting: SMD
Case: SSOP20
товар відсутній
| RF201L2SDDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Mounting: SMD
Case: SMA
Max. off-state voltage: 200V
Max. forward voltage: 0.87V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 20A
Kind of package: reel; tape
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Mounting: SMD
Case: SMA
Max. off-state voltage: 200V
Max. forward voltage: 0.87V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 20A
Kind of package: reel; tape
Type of diode: rectifying
товар відсутній
| RB050L-60DDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; DO214AC,SMA; reel,tape
Case: DO214AC; SMA
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward voltage: 0.56V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Leakage current: 0.1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; DO214AC,SMA; reel,tape
Case: DO214AC; SMA
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward voltage: 0.56V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Leakage current: 0.1mA
товар відсутній
| RB058L-60DDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; DO214AC,SMA; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 60V
Max. forward voltage: 0.64V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Leakage current: 4µA
Type of diode: Schottky rectifying
Mounting: SMD
Case: DO214AC; SMA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; DO214AC,SMA; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 60V
Max. forward voltage: 0.64V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Leakage current: 4µA
Type of diode: Schottky rectifying
Mounting: SMD
Case: DO214AC; SMA
на замовлення 1073 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 39.01 грн |
| 12+ | 32 грн |
| 70+ | 12.66 грн |
| 192+ | 11.97 грн |
| RB531SM-30FHT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC79,SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.35V
Case: SC79; SOD523
Kind of package: reel; tape
Leakage current: 10µA
Max. forward impulse current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC79,SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.35V
Case: SC79; SOD523
Kind of package: reel; tape
Leakage current: 10µA
Max. forward impulse current: 1A
товар відсутній
| RB095BGE-40TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3Ax2; DPAK,SC63,TO252
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.55V
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3Ax2; DPAK,SC63,TO252
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.55V
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 50A
товар відсутній
| RB095BGE-60TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3Ax2; DPAK,SC63,TO252
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.58V
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Leakage current: 0.3mA
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3Ax2; DPAK,SC63,TO252
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.58V
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Leakage current: 0.3mA
Max. forward impulse current: 50A
товар відсутній
| RB095BM-40FHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3Ax2; DPAK,SC63,TO252
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.55V
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3Ax2; DPAK,SC63,TO252
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.55V
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 50A
товар відсутній
| RB095BM-60FHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3Ax2; DPAK,SC63,TO252
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.58V
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Leakage current: 0.3mA
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3Ax2; DPAK,SC63,TO252
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.58V
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Leakage current: 0.3mA
Max. forward impulse current: 50A
товар відсутній