на замовлення 8185 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 170.35 грн |
| 10+ | 140.34 грн |
| 100+ | 97.34 грн |
| 250+ | 88.88 грн |
| 500+ | 81.12 грн |
| 1000+ | 78.3 грн |
| 2500+ | 66.24 грн |
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Технічний опис R8003KND3TL1 ROHM Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 3A, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V, Power Dissipation (Max): 45W (Ta), Vgs(th) (Max) @ Id: 4.5V @ 2mA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V.
Інші пропозиції R8003KND3TL1 за ціною від 94.78 грн до 177.03 грн
| Фото | Назва | Виробник | Інформація |
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R8003KND3TL1 | Виробник : Rohm Semiconductor |
 Description: HIGH-SPEED SWITCHING NCH 800V 3APackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V Power Dissipation (Max): 45W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 2mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V |
на замовлення 988 шт: термін постачання 21-31 дні (днів) |
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| R8003KND3TL1 | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 9A; 48W; TO252 Mounting: SMD Power dissipation: 48W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 9A Case: TO252 Drain-source voltage: 800V Drain current: 3A On-state resistance: 1.8Ω Type of transistor: N-MOSFET кількість в упаковці: 2500 шт |
товар відсутній |
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R8003KND3TL1 | Виробник : Rohm Semiconductor |
Description: HIGH-SPEED SWITCHING NCH 800V 3A Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V Power Dissipation (Max): 45W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 2mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V |
товар відсутній |
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| R8003KND3TL1 | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 9A; 48W; TO252 Mounting: SMD Power dissipation: 48W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 9A Case: TO252 Drain-source voltage: 800V Drain current: 3A On-state resistance: 1.8Ω Type of transistor: N-MOSFET |
товар відсутній |