Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1270) > Сторінка 18 з 22
| Фото | Назва | Виробник | Інформація |
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PJX138K_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.35A Pulsed drain current: 1.2A Power dissipation: 223mW Case: SOT563 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 1nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 3985 шт: термін постачання 21-30 дні (днів) |
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| PJX138L_R1_00002 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; SOT563 Type of transistor: N-MOSFET x2 Polarisation: unipolar Case: SOT563 Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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| PJX138L_R1_00002 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; SOT563 Type of transistor: N-MOSFET x2 Polarisation: unipolar Case: SOT563 Mounting: SMD Kind of package: tape Kind of channel: enhanced |
товару немає в наявності |
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PJX8603_R1_00001 | PanJit Semiconductor |
 Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 50/-60V Drain current: 360/-200mA Power dissipation: 0.3W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 2.5/7Ω Mounting: SMD Gate charge: 0.95/1.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 3950 шт: термін постачання 14-21 дні (днів) |
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PJX8603_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 50/-60V Drain current: 360/-200mA Power dissipation: 0.3W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 2.5/7Ω Mounting: SMD Gate charge: 0.95/1.1nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 3950 шт: термін постачання 21-30 дні (днів) |
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| PMS410_R2_00601 | PanJit Semiconductor |
PMS410-R2 SMD/THT sing. phase diode bridge rectif. |
товару немає в наявності |
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| PSDH60120S1B_T0_00601 | PanJit Semiconductor | PSDH60120S1B-T0 THT universal diodes |
товару немає в наявності |
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| PSMB050N10NS2_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 138W Case: TO263 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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| PSMB050N10NS2_T0_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 138W Case: TO263 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 53nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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| PSMB050N10NS2_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 138W Case: TO263 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhanced |
товару немає в наявності |
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| PSMB050N10NS2_T0_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 138W Case: TO263 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 53nC Kind of package: tube Kind of channel: enhanced |
товару немає в наявності |
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| PSMB055N08NS1_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 108A Pulsed drain current: 360A Power dissipation: 113.6W Case: TO263 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 65.8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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| PSMB055N08NS1_T0_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 108A Pulsed drain current: 360A Power dissipation: 113.6W Case: TO263 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 65.8nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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| PSMB055N08NS1_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 108A Pulsed drain current: 360A Power dissipation: 113.6W Case: TO263 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 65.8nC Kind of package: reel; tape Kind of channel: enhanced |
товару немає в наявності |
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| PSMB055N08NS1_T0_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 108A Pulsed drain current: 360A Power dissipation: 113.6W Case: TO263 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 65.8nC Kind of package: tube Kind of channel: enhanced |
товару немає в наявності |
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| PSMN015N10NS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Case: TOLL Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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| PSMN015N10NS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Case: TOLL Mounting: SMD Kind of package: tape Kind of channel: enhanced |
товару немає в наявності |
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| PSMN028N10NS2_R2_00201 | PanJit Semiconductor |
PSMN028N10NS2-R2 SMD N channel transistors |
товару немає в наявності |
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PSMP050N10NS2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 138W Case: TO220ABL Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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PSMP050N10NS2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 138W Case: TO220ABL Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhanced |
товару немає в наявності |
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PSMP055N08NS1_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 111A Pulsed drain current: 360A Power dissipation: 136W Case: TO220ABL Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 65.8nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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PSMP055N08NS1_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 111A Pulsed drain current: 360A Power dissipation: 136W Case: TO220ABL Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 65.8nC Kind of package: tube Kind of channel: enhanced |
товару немає в наявності |
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| PSMP075N15NS1_T0_00601 | PanJit Semiconductor |
PSMP075N15NS1-T0 THT N channel transistors |
товару немає в наявності |
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PSMQC040N10NS2_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 122A Pulsed drain current: 488A Power dissipation: 125W Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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PSMQC040N10NS2_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 122A Pulsed drain current: 488A Power dissipation: 125W Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhanced |
товару немає в наявності |
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| PTGH4065S1_T0_00201 | PanJit Semiconductor | PTGH4065S1-T0 THT IGBT transistors |
товару немає в наявності |
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| PZ1AL3V6B_R1_00001 | PanJit Semiconductor | PZ1AL3V6B-R1 SMD Zener diodes |
товару немає в наявності |
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PZS1112BES_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 12V; SMD; reel,tape; SOD523; single diode; 50nA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode Leakage current: 50nA кількість в упаковці: 30000 шт |
товару немає в наявності |
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PZS1112BES_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 12V; SMD; reel,tape; SOD523; single diode; 50nA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode Leakage current: 50nA |
товару немає в наявності |
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| PZS516V2BAS_R1_00001 | PanJit Semiconductor |
PZS516V2BAS-R1 SMD Zener diodes |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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RB500V-40_R1_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 45V; 0.1A; SOD323; reel,tape Mounting: SMD Case: SOD323 Kind of package: reel; tape Type of diode: Schottky switching Features of semiconductor devices: ultrafast switching Max. off-state voltage: 45V Max. forward voltage: 0.45V Load current: 0.1A Semiconductor structure: single diode Max. forward impulse current: 1A Leakage current: 1µA |
на замовлення 2200 шт: термін постачання 21-30 дні (днів) |
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RB500V-40_R1_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 45V; 0.1A; SOD323; reel,tape Mounting: SMD Case: SOD323 Kind of package: reel; tape Type of diode: Schottky switching Features of semiconductor devices: ultrafast switching Max. off-state voltage: 45V Max. forward voltage: 0.45V Load current: 0.1A Semiconductor structure: single diode Max. forward impulse current: 1A Leakage current: 1µA кількість в упаковці: 1 шт |
на замовлення 2200 шт: термін постачання 14-21 дні (днів) |
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| RB501V-40_R1_00001 | PanJit Semiconductor |
RB501V-40-R1 SMD Schottky diodes |
на замовлення 5330 шт: термін постачання 14-21 дні (днів) |
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| RB520S30_R1_00001 | PanJit Semiconductor |
RB520S30-R1 SMD Schottky diodes |
на замовлення 4980 шт: термін постачання 14-21 дні (днів) |
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| RB520S40-AU_R1_000A1 | PanJit Semiconductor |
RB520S40-AU-R1 SMD Schottky diodes |
на замовлення 6950 шт: термін постачання 14-21 дні (днів) |
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RB521S30_R1_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD523; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Case: SOD523 Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.5V Leakage current: 0.1mA Max. forward impulse current: 1A Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 9370 шт: термін постачання 14-21 дні (днів) |
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RB521S30_R1_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD523; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Case: SOD523 Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.5V Leakage current: 0.1mA Max. forward impulse current: 1A Kind of package: reel; tape |
на замовлення 9370 шт: термін постачання 21-30 дні (днів) |
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| RB720M-30_R1_00001 | PanJit Semiconductor |
RB720M-30-R1 SMD Schottky diodes |
товару немає в наявності |
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| RB751S40-AU_R1_000A1 | PanJit Semiconductor |
RB751S40-AU-R1 SMD Schottky diodes |
на замовлення 4340 шт: термін постачання 14-21 дні (днів) |
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| RB751S40_R1_00001 | PanJit Semiconductor |
RB751S40-R1 SMD Schottky diodes |
товару немає в наявності |
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RB751V-40-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD323; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 40V Load current: 0.3A Semiconductor structure: single diode Case: SOD323 Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.55V Leakage current: 22µA Max. forward impulse current: 0.6A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
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RB751V-40X_R1_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 40V; 30mA; SOD323; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Case: SOD323 Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.37V Max. load current: 0.2A Leakage current: 0.5µA Kind of package: reel; tape |
на замовлення 4538 шт: термін постачання 21-30 дні (днів) |
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RB751V-40_R1_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD323; reel,tape; 200mW Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 40V Load current: 0.3A Semiconductor structure: single diode Case: SOD323 Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.34V Leakage current: 0.5µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.2W |
на замовлення 2675 шт: термін постачання 21-30 дні (днів) |
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RB751V-40-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD323; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 40V Load current: 0.3A Semiconductor structure: single diode Case: SOD323 Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.55V Leakage current: 22µA Max. forward impulse current: 0.6A Kind of package: reel; tape Application: automotive industry кількість в упаковці: 1 шт |
товару немає в наявності |
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RB751V-40_R1_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD323; reel,tape; 200mW Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 40V Load current: 0.3A Semiconductor structure: single diode Case: SOD323 Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.34V Leakage current: 0.5µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.2W кількість в упаковці: 1 шт |
на замовлення 2675 шт: термін постачання 14-21 дні (днів) |
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RB751V-40X_R1_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 40V; 30mA; SOD323; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Case: SOD323 Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.37V Max. load current: 0.2A Leakage current: 0.5µA Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 4538 шт: термін постачання 14-21 дні (днів) |
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| RDXK210_T0_00601 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 100A; flat Max. off-state voltage: 1kV Load current: 2A Case: DXK Max. forward voltage: 1.3V Max. forward impulse current: 100A Kind of package: tube Leads: flat pin Electrical mounting: THT Version: flat Type of bridge rectifier: single-phase кількість в упаковці: 1 шт |
товару немає в наявності |
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| RDXK210_T0_00601 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 100A; flat Max. off-state voltage: 1kV Load current: 2A Case: DXK Max. forward voltage: 1.3V Max. forward impulse current: 100A Kind of package: tube Leads: flat pin Electrical mounting: THT Version: flat Type of bridge rectifier: single-phase |
товару немає в наявності |
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| RDXK410_T0_00601 | PanJit Semiconductor | RDXK410-T0 Flat single phase diode bridge rectif. |
товару немає в наявності |
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| RDXK610_T0_00601 | PanJit Semiconductor | RDXK610-T0 Flat single phase diode bridge rectif. |
товару немає в наявності |
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| RDXK810_T0_00601 | PanJit Semiconductor | RDXK810-T0 Flat single phase diode bridge rectif. |
товару немає в наявності |
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| RPMS210_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 100A; M4 Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 2A Max. forward impulse current: 100A Case: M4 Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.3V Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
товару немає в наявності |
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| RPMS210_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 100A; M4 Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 2A Max. forward impulse current: 100A Case: M4 Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.3V Features of semiconductor devices: glass passivated |
товару немає в наявності |
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| RPMS310_R2_00601 | PanJit Semiconductor |
RPMS310-R2 SMD/THT sing. phase diode bridge rectif. |
товару немає в наявності |
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| RPMS410_R2_00601 | PanJit Semiconductor |
RPMS410-R2 SMD/THT sing. phase diode bridge rectif. |
товару немає в наявності |
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RS1002FL_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 500ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Case: SOD123F Features of semiconductor devices: fast switching; glass passivated Max. forward voltage: 1.3V Leakage current: 50µA Max. forward impulse current: 30A Reverse recovery time: 0.5µs Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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RS1002FL_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 500ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Case: SOD123F Features of semiconductor devices: fast switching; glass passivated Max. forward voltage: 1.3V Leakage current: 50µA Max. forward impulse current: 30A Reverse recovery time: 0.5µs Kind of package: reel; tape |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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RS1004FL_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 500ns; SOD123F; Ufmax: 1.3V Mounting: SMD Case: SOD123F Kind of package: reel; tape Features of semiconductor devices: fast switching; glass passivated Max. off-state voltage: 0.4kV Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 0.5µs Max. forward impulse current: 30A Leakage current: 50µA Type of diode: rectifying кількість в упаковці: 1 шт |
на замовлення 2880 шт: термін постачання 14-21 дні (днів) |
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RS1004FL_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 500ns; SOD123F; Ufmax: 1.3V Mounting: SMD Case: SOD123F Kind of package: reel; tape Features of semiconductor devices: fast switching; glass passivated Max. off-state voltage: 0.4kV Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 0.5µs Max. forward impulse current: 30A Leakage current: 50µA Type of diode: rectifying |
на замовлення 2880 шт: термін постачання 21-30 дні (днів) |
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| RS1006FL_R1_00001 | PanJit Semiconductor |
RS1006FL-R1 SMD universal diodes |
товару немає в наявності |
| PJX138K_R1_00001 |
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 3985 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 11.08 грн |
| 62+ | 5.95 грн |
| 100+ | 5.36 грн |
| 193+ | 4.42 грн |
| 500+ | 4.25 грн |
| 531+ | 4.18 грн |
| 1000+ | 4.02 грн |
| PJX138L_R1_00002 |
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Case: SOT563
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Case: SOT563
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
| PJX138L_R1_00002 |
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Case: SOT563
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Case: SOT563
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
товару немає в наявності
| PJX8603_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Gate charge: 0.95/1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Gate charge: 0.95/1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 3950 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 13.29 грн |
| 33+ | 8.42 грн |
| 100+ | 7.32 грн |
| 170+ | 6.08 грн |
| 466+ | 5.73 грн |
| 1000+ | 5.47 грн |
| PJX8603_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Gate charge: 0.95/1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Gate charge: 0.95/1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 3950 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 11.08 грн |
| 55+ | 6.76 грн |
| 100+ | 6.1 грн |
| 170+ | 5.07 грн |
| 466+ | 4.78 грн |
| 1000+ | 4.56 грн |
| PMS410_R2_00601 |
|
Виробник: PanJit Semiconductor
PMS410-R2 SMD/THT sing. phase diode bridge rectif.
PMS410-R2 SMD/THT sing. phase diode bridge rectif.
товару немає в наявності
| PSDH60120S1B_T0_00601 |
Виробник: PanJit Semiconductor
PSDH60120S1B-T0 THT universal diodes
PSDH60120S1B-T0 THT universal diodes
товару немає в наявності
| PSMB050N10NS2_R2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
| PSMB050N10NS2_T0_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
| PSMB050N10NS2_R2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
товару немає в наявності
| PSMB050N10NS2_T0_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
товару немає в наявності
| PSMB055N08NS1_R2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
| PSMB055N08NS1_T0_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
| PSMB055N08NS1_R2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: reel; tape
Kind of channel: enhanced
товару немає в наявності
| PSMB055N08NS1_T0_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhanced
товару немає в наявності
| PSMN015N10NS2_R2_00201 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TOLL
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TOLL
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
| PSMN015N10NS2_R2_00201 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TOLL
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TOLL
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
товару немає в наявності
| PSMN028N10NS2_R2_00201 |
|
Виробник: PanJit Semiconductor
PSMN028N10NS2-R2 SMD N channel transistors
PSMN028N10NS2-R2 SMD N channel transistors
товару немає в наявності
| PSMP050N10NS2_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
| PSMP050N10NS2_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 138W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
товару немає в наявності
| PSMP055N08NS1_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
| PSMP055N08NS1_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhanced
товару немає в наявності
| PSMP075N15NS1_T0_00601 |
|
Виробник: PanJit Semiconductor
PSMP075N15NS1-T0 THT N channel transistors
PSMP075N15NS1-T0 THT N channel transistors
товару немає в наявності
| PSMQC040N10NS2_R2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
| PSMQC040N10NS2_R2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
товару немає в наявності
| PTGH4065S1_T0_00201 |
Виробник: PanJit Semiconductor
PTGH4065S1-T0 THT IGBT transistors
PTGH4065S1-T0 THT IGBT transistors
товару немає в наявності
| PZ1AL3V6B_R1_00001 |
Виробник: PanJit Semiconductor
PZ1AL3V6B-R1 SMD Zener diodes
PZ1AL3V6B-R1 SMD Zener diodes
товару немає в наявності
| PZS1112BES_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 12V; SMD; reel,tape; SOD523; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Leakage current: 50nA
кількість в упаковці: 30000 шт
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 12V; SMD; reel,tape; SOD523; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Leakage current: 50nA
кількість в упаковці: 30000 шт
товару немає в наявності
| PZS1112BES_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 12V; SMD; reel,tape; SOD523; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 12V; SMD; reel,tape; SOD523; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Leakage current: 50nA
товару немає в наявності
| PZS516V2BAS_R1_00001 |
|
Виробник: PanJit Semiconductor
PZS516V2BAS-R1 SMD Zener diodes
PZS516V2BAS-R1 SMD Zener diodes
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 41+ | 6.97 грн |
| 284+ | 3.63 грн |
| 781+ | 3.44 грн |
| 9000+ | 3.43 грн |
| RB500V-40_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 45V; 0.1A; SOD323; reel,tape
Mounting: SMD
Case: SOD323
Kind of package: reel; tape
Type of diode: Schottky switching
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 45V
Max. forward voltage: 0.45V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Leakage current: 1µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 45V; 0.1A; SOD323; reel,tape
Mounting: SMD
Case: SOD323
Kind of package: reel; tape
Type of diode: Schottky switching
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 45V
Max. forward voltage: 0.45V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Leakage current: 1µA
на замовлення 2200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 120+ | 3.3 грн |
| 162+ | 2.28 грн |
| 177+ | 2.08 грн |
| 250+ | 1.75 грн |
| 500+ | 1.57 грн |
| 659+ | 1.3 грн |
| 1811+ | 1.23 грн |
| RB500V-40_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 45V; 0.1A; SOD323; reel,tape
Mounting: SMD
Case: SOD323
Kind of package: reel; tape
Type of diode: Schottky switching
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 45V
Max. forward voltage: 0.45V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Leakage current: 1µA
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 45V; 0.1A; SOD323; reel,tape
Mounting: SMD
Case: SOD323
Kind of package: reel; tape
Type of diode: Schottky switching
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 45V
Max. forward voltage: 0.45V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Leakage current: 1µA
кількість в упаковці: 1 шт
на замовлення 2200 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 3.96 грн |
| 97+ | 2.84 грн |
| 107+ | 2.5 грн |
| 250+ | 2.1 грн |
| 500+ | 1.89 грн |
| 659+ | 1.56 грн |
| 1811+ | 1.48 грн |
| RB501V-40_R1_00001 |
|
Виробник: PanJit Semiconductor
RB501V-40-R1 SMD Schottky diodes
RB501V-40-R1 SMD Schottky diodes
на замовлення 5330 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 3.96 грн |
| 646+ | 1.6 грн |
| 1774+ | 1.51 грн |
| RB520S30_R1_00001 |
|
Виробник: PanJit Semiconductor
RB520S30-R1 SMD Schottky diodes
RB520S30-R1 SMD Schottky diodes
на замовлення 4980 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 49+ | 5.89 грн |
| 452+ | 2.28 грн |
| 1243+ | 2.16 грн |
| RB520S40-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
RB520S40-AU-R1 SMD Schottky diodes
RB520S40-AU-R1 SMD Schottky diodes
на замовлення 6950 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 11.87 грн |
| 408+ | 2.53 грн |
| 1121+ | 2.39 грн |
| RB521S30_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD523; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD523
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.5V
Leakage current: 0.1mA
Max. forward impulse current: 1A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD523; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD523
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.5V
Leakage current: 0.1mA
Max. forward impulse current: 1A
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 9370 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 71+ | 4.04 грн |
| 89+ | 3.11 грн |
| 100+ | 2.69 грн |
| 250+ | 2.5 грн |
| 499+ | 2.07 грн |
| 1370+ | 1.96 грн |
| 10000+ | 1.89 грн |
| RB521S30_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD523; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD523
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.5V
Leakage current: 0.1mA
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD523; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD523
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.5V
Leakage current: 0.1mA
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 9370 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 118+ | 3.36 грн |
| 148+ | 2.5 грн |
| 164+ | 2.24 грн |
| 250+ | 2.09 грн |
| 499+ | 1.73 грн |
| 1370+ | 1.63 грн |
| RB720M-30_R1_00001 |
|
Виробник: PanJit Semiconductor
RB720M-30-R1 SMD Schottky diodes
RB720M-30-R1 SMD Schottky diodes
товару немає в наявності
| RB751S40-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
RB751S40-AU-R1 SMD Schottky diodes
RB751S40-AU-R1 SMD Schottky diodes
на замовлення 4340 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 59+ | 4.87 грн |
| 390+ | 2.65 грн |
| 1072+ | 2.5 грн |
| RB751S40_R1_00001 |
|
Виробник: PanJit Semiconductor
RB751S40-R1 SMD Schottky diodes
RB751S40-R1 SMD Schottky diodes
товару немає в наявності
| RB751V-40-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Case: SOD323
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.55V
Leakage current: 22µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Case: SOD323
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.55V
Leakage current: 22µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
| RB751V-40X_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 30mA; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Case: SOD323
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.37V
Max. load current: 0.2A
Leakage current: 0.5µA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 30mA; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Case: SOD323
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.37V
Max. load current: 0.2A
Leakage current: 0.5µA
Kind of package: reel; tape
на замовлення 4538 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 81+ | 4.91 грн |
| 107+ | 3.45 грн |
| 119+ | 3.09 грн |
| 250+ | 2.59 грн |
| 452+ | 1.9 грн |
| 1243+ | 1.79 грн |
| RB751V-40_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD323; reel,tape; 200mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Case: SOD323
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.34V
Leakage current: 0.5µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD323; reel,tape; 200mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Case: SOD323
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.34V
Leakage current: 0.5µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.2W
на замовлення 2675 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 86+ | 4.63 грн |
| 112+ | 3.31 грн |
| 126+ | 2.92 грн |
| 250+ | 2.45 грн |
| 480+ | 1.79 грн |
| 1319+ | 1.69 грн |
| RB751V-40-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Case: SOD323
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.55V
Leakage current: 22µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Case: SOD323
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.55V
Leakage current: 22µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
кількість в упаковці: 1 шт
товару немає в наявності
| RB751V-40_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD323; reel,tape; 200mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Case: SOD323
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.34V
Leakage current: 0.5µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.2W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.3A; SOD323; reel,tape; 200mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Case: SOD323
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.34V
Leakage current: 0.5µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.2W
кількість в упаковці: 1 шт
на замовлення 2675 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 52+ | 5.55 грн |
| 67+ | 4.12 грн |
| 100+ | 3.5 грн |
| 250+ | 2.95 грн |
| 480+ | 2.14 грн |
| 1319+ | 2.03 грн |
| RB751V-40X_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 30mA; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Case: SOD323
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.37V
Max. load current: 0.2A
Leakage current: 0.5µA
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 30mA; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Case: SOD323
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.37V
Max. load current: 0.2A
Leakage current: 0.5µA
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 4538 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 49+ | 5.89 грн |
| 64+ | 4.3 грн |
| 100+ | 3.71 грн |
| 250+ | 3.11 грн |
| 452+ | 2.27 грн |
| 1243+ | 2.15 грн |
| RDXK210_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 100A; flat
Max. off-state voltage: 1kV
Load current: 2A
Case: DXK
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: tube
Leads: flat pin
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
кількість в упаковці: 1 шт
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 100A; flat
Max. off-state voltage: 1kV
Load current: 2A
Case: DXK
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: tube
Leads: flat pin
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
кількість в упаковці: 1 шт
товару немає в наявності
| RDXK210_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 100A; flat
Max. off-state voltage: 1kV
Load current: 2A
Case: DXK
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: tube
Leads: flat pin
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 100A; flat
Max. off-state voltage: 1kV
Load current: 2A
Case: DXK
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: tube
Leads: flat pin
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
товару немає в наявності
| RDXK410_T0_00601 |
Виробник: PanJit Semiconductor
RDXK410-T0 Flat single phase diode bridge rectif.
RDXK410-T0 Flat single phase diode bridge rectif.
товару немає в наявності
| RDXK610_T0_00601 |
Виробник: PanJit Semiconductor
RDXK610-T0 Flat single phase diode bridge rectif.
RDXK610-T0 Flat single phase diode bridge rectif.
товару немає в наявності
| RDXK810_T0_00601 |
Виробник: PanJit Semiconductor
RDXK810-T0 Flat single phase diode bridge rectif.
RDXK810-T0 Flat single phase diode bridge rectif.
товару немає в наявності
| RPMS210_R2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 100A; M4
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 100A
Case: M4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.3V
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 100A; M4
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 100A
Case: M4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.3V
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
товару немає в наявності
| RPMS210_R2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 100A; M4
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 100A
Case: M4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.3V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 100A; M4
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 100A
Case: M4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.3V
Features of semiconductor devices: glass passivated
товару немає в наявності
| RPMS310_R2_00601 |
|
Виробник: PanJit Semiconductor
RPMS310-R2 SMD/THT sing. phase diode bridge rectif.
RPMS310-R2 SMD/THT sing. phase diode bridge rectif.
товару немає в наявності
| RPMS410_R2_00601 |
|
Виробник: PanJit Semiconductor
RPMS410-R2 SMD/THT sing. phase diode bridge rectif.
RPMS410-R2 SMD/THT sing. phase diode bridge rectif.
товару немає в наявності
| RS1002FL_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Features of semiconductor devices: fast switching; glass passivated
Max. forward voltage: 1.3V
Leakage current: 50µA
Max. forward impulse current: 30A
Reverse recovery time: 0.5µs
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Features of semiconductor devices: fast switching; glass passivated
Max. forward voltage: 1.3V
Leakage current: 50µA
Max. forward impulse current: 30A
Reverse recovery time: 0.5µs
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 17.09 грн |
| 29+ | 9.71 грн |
| 100+ | 5.21 грн |
| 250+ | 4.68 грн |
| 257+ | 4.01 грн |
| 707+ | 3.79 грн |
| 1000+ | 3.72 грн |
| RS1002FL_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Features of semiconductor devices: fast switching; glass passivated
Max. forward voltage: 1.3V
Leakage current: 50µA
Max. forward impulse current: 30A
Reverse recovery time: 0.5µs
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Features of semiconductor devices: fast switching; glass passivated
Max. forward voltage: 1.3V
Leakage current: 50µA
Max. forward impulse current: 30A
Reverse recovery time: 0.5µs
Kind of package: reel; tape
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 14.24 грн |
| 48+ | 7.79 грн |
| 100+ | 4.34 грн |
| 250+ | 3.9 грн |
| 257+ | 3.34 грн |
| 707+ | 3.16 грн |
| 1000+ | 3.1 грн |
| 3000+ | 3.03 грн |
| RS1004FL_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 0.5µs
Max. forward impulse current: 30A
Leakage current: 50µA
Type of diode: rectifying
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 0.5µs
Max. forward impulse current: 30A
Leakage current: 50µA
Type of diode: rectifying
кількість в упаковці: 1 шт
на замовлення 2880 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 17.09 грн |
| 29+ | 9.71 грн |
| 100+ | 5.21 грн |
| 250+ | 4.68 грн |
| 271+ | 3.82 грн |
| 744+ | 3.61 грн |
| 3000+ | 3.47 грн |
| RS1004FL_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 0.5µs
Max. forward impulse current: 30A
Leakage current: 50µA
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 0.5µs
Max. forward impulse current: 30A
Leakage current: 50µA
Type of diode: rectifying
на замовлення 2880 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 14.24 грн |
| 48+ | 7.79 грн |
| 100+ | 4.34 грн |
| 250+ | 3.9 грн |
| 271+ | 3.18 грн |
| 744+ | 3.01 грн |
| RS1006FL_R1_00001 |
|
Виробник: PanJit Semiconductor
RS1006FL-R1 SMD universal diodes
RS1006FL-R1 SMD universal diodes
товару немає в наявності