Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1533) > Сторінка 13 з 26
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P6SMBJ28A_R1_00001 | PanJit Semiconductor |
 Category: Unidirectional SMD transil diodesDescription: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ кількість в упаковці: 1 шт |
на замовлення 795 шт: термін постачання 14-21 дні (днів) |
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P6SMBJ28A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
на замовлення 795 шт: термін постачання 21-30 дні (днів) |
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P6SMBJ28CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P6SMBJ |
на замовлення 1600 шт: термін постачання 21-30 дні (днів) |
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P6SMBJ28CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P6SMBJ кількість в упаковці: 1 шт |
на замовлення 1600 шт: термін постачання 14-21 дні (днів) |
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P6SMBJ30A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ кількість в упаковці: 1 шт |
на замовлення 630 шт: термін постачання 14-21 дні (днів) |
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P6SMBJ30A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
на замовлення 630 шт: термін постачання 21-30 дні (днів) |
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P6SMBJ33A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ кількість в упаковці: 1 шт |
на замовлення 70 шт: термін постачання 14-21 дні (днів) |
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P6SMBJ33A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
на замовлення 70 шт: термін постачання 21-30 дні (днів) |
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P6SMBJ33CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P6SMBJ |
на замовлення 480 шт: термін постачання 21-30 дні (днів) |
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P6SMBJ33CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P6SMBJ кількість в упаковці: 1 шт |
на замовлення 480 шт: термін постачання 14-21 дні (днів) |
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P6SMBJ33CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ кількість в упаковці: 1 шт |
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P6SMBJ33CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ |
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P6SMBJ36CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ кількість в упаковці: 1 шт |
на замовлення 775 шт: термін постачання 14-21 дні (днів) |
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P6SMBJ36CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
на замовлення 775 шт: термін постачання 21-30 дні (днів) |
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P6SMBJ40CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 9.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ кількість в упаковці: 1 шт |
на замовлення 5997 шт: термін постачання 14-21 дні (днів) |
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P6SMBJ40CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 9.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ |
на замовлення 5997 шт: термін постачання 21-30 дні (днів) |
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P6SMBJ48A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 53.3...58.9V Max. forward impulse current: 7.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ кількість в упаковці: 1 шт |
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P6SMBJ48A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 53.3...58.9V Max. forward impulse current: 7.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ |
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P6SMBJ5.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ кількість в упаковці: 1 шт |
на замовлення 245 шт: термін постачання 14-21 дні (днів) |
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P6SMBJ5.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
на замовлення 245 шт: термін постачання 21-30 дні (днів) |
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P6SMBJ5.0CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1.6mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ кількість в упаковці: 1 шт |
на замовлення 635 шт: термін постачання 14-21 дні (днів) |
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P6SMBJ5.0CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1.6mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
на замовлення 635 шт: термін постачання 21-30 дні (днів) |
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P6SMBJ6.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 58.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ кількість в упаковці: 1 шт |
на замовлення 745 шт: термін постачання 14-21 дні (днів) |
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P6SMBJ6.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 58.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
на замовлення 745 шт: термін постачання 21-30 дні (днів) |
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P6SMBJ7.5CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.21V Max. forward impulse current: 46.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.2mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ кількість в упаковці: 1 шт |
на замовлення 800 шт: термін постачання 14-21 дні (днів) |
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P6SMBJ7.5CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.21V Max. forward impulse current: 46.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.2mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
на замовлення 800 шт: термін постачання 21-30 дні (днів) |
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PBHV8110DA-AU_R1_000A1 | PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23 Mounting: SMD Collector current: 1A Pulsed collector current: 3A Type of transistor: NPN Power dissipation: 1.25W Polarisation: bipolar Case: SOT23 Frequency: 100MHz Collector-emitter voltage: 100V Current gain: 100...300 |
на замовлення 3133 шт: термін постачання 21-30 дні (днів) |
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PBHV8110DA-AU_R1_000A1 | PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23 Mounting: SMD Collector current: 1A Pulsed collector current: 3A Type of transistor: NPN Power dissipation: 1.25W Polarisation: bipolar Case: SOT23 Frequency: 100MHz Collector-emitter voltage: 100V Current gain: 100...300 кількість в упаковці: 1 шт |
на замовлення 3133 шт: термін постачання 14-21 дні (днів) |
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| PCDB0665G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape Mounting: SMD Power dissipation: 62.5W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Case: TO263 Max. off-state voltage: 650V Max. load current: 28A Max. forward voltage: 1.8V Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 320A Leakage current: 50µA кількість в упаковці: 1 шт |
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| PCDB0665G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape Mounting: SMD Power dissipation: 62.5W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Case: TO263 Max. off-state voltage: 650V Max. load current: 28A Max. forward voltage: 1.8V Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 320A Leakage current: 50µA |
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| PCDB0865G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 8A Max. load current: 36A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO263 Kind of package: reel; tape Leakage current: 60µA Max. forward impulse current: 0.48kA Power dissipation: 78.5W кількість в упаковці: 1 шт |
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| PCDB0865G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 8A Max. load current: 36A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO263 Kind of package: reel; tape Leakage current: 60µA Max. forward impulse current: 0.48kA Power dissipation: 78.5W |
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| PCDB10120G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO263 Max. forward voltage: 2V Max. load current: 76A Leakage current: 0.1mA Max. forward impulse current: 640A Kind of package: reel; tape Power dissipation: 164.8W кількість в упаковці: 1 шт |
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| PCDB10120G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO263 Max. forward voltage: 2V Max. load current: 76A Leakage current: 0.1mA Max. forward impulse current: 640A Kind of package: reel; tape Power dissipation: 164.8W |
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| PCDB1065G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 650V; 10A; TO263; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO263 Max. forward voltage: 1.8V Max. load current: 40A Leakage current: 50µA Max. forward impulse current: 0.55kA Kind of package: reel; tape кількість в упаковці: 1 шт |
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| PCDB1065G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 650V; 10A; TO263; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO263 Max. forward voltage: 1.8V Max. load current: 40A Leakage current: 50µA Max. forward impulse current: 0.55kA Kind of package: reel; tape |
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| PCDB20120G1_R2_00001 | PanJit Semiconductor |
PCDB20120G1-R2 SMD Schottky diodes |
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PCDD0465G1_L2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Max. load current: 20A Power dissipation: 46W Semiconductor structure: single diode Case: TO252AA Kind of package: reel; tape Max. forward impulse current: 280A Max. forward voltage: 1.8V Leakage current: 40µA кількість в упаковці: 1 шт |
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PCDD0465G1_L2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Max. load current: 20A Power dissipation: 46W Semiconductor structure: single diode Case: TO252AA Kind of package: reel; tape Max. forward impulse current: 280A Max. forward voltage: 1.8V Leakage current: 40µA |
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| PCDD0465GB_L2_00601 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Max. load current: 17A Power dissipation: 51W Semiconductor structure: single diode Case: TO252AA Kind of package: reel; tape Max. forward impulse current: 320A Max. forward voltage: 1.4V Leakage current: 0.1mA кількість в упаковці: 1 шт |
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| PCDD0465GB_L2_00601 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Max. load current: 17A Power dissipation: 51W Semiconductor structure: single diode Case: TO252AA Kind of package: reel; tape Max. forward impulse current: 320A Max. forward voltage: 1.4V Leakage current: 0.1mA |
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PCDD05120G1_L2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252AA; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Max. load current: 40A Semiconductor structure: single diode Max. forward voltage: 2V Case: TO252AA Kind of package: reel; tape Leakage current: 50µA Max. forward impulse current: 520A Power dissipation: 120W кількість в упаковці: 1 шт |
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PCDD05120G1_L2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252AA; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Max. load current: 40A Semiconductor structure: single diode Max. forward voltage: 2V Case: TO252AA Kind of package: reel; tape Leakage current: 50µA Max. forward impulse current: 520A Power dissipation: 120W |
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| PCDD0665G1_L2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO252AA; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Max. load current: 28A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO252AA Kind of package: reel; tape Leakage current: 50µA Max. forward impulse current: 320A Power dissipation: 64.9W кількість в упаковці: 1 шт |
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| PCDD0665G1_L2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO252AA; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Max. load current: 28A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO252AA Kind of package: reel; tape Leakage current: 50µA Max. forward impulse current: 320A Power dissipation: 64.9W |
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| PCDD0665GB_L2_00601 | PanJit Semiconductor | PCDD0665GB-L2 SMD Schottky diodes |
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| PCDD08120G1_L2_00001 | PanJit Semiconductor |
PCDD08120G1-L2 SMD Schottky diodes |
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| PCDD0865G1_L2_00001 | PanJit Semiconductor | PCDD0865G1-L2 SMD Schottky diodes |
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| PCDD0865GB_L2_00601 | PanJit Semiconductor | PCDD0865GB-L2 SMD Schottky diodes |
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| PCDD10120G1_L2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO252AA; 200W Mounting: SMD Max. forward impulse current: 640A Leakage current: 0.1mA Case: TO252AA Kind of package: reel; tape Power dissipation: 200W Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. load current: 72A Max. forward voltage: 2V Load current: 10A Semiconductor structure: single diode кількість в упаковці: 3000 шт |
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| PCDD10120G1_L2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO252AA; 200W Mounting: SMD Max. forward impulse current: 640A Leakage current: 0.1mA Case: TO252AA Kind of package: reel; tape Power dissipation: 200W Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. load current: 72A Max. forward voltage: 2V Load current: 10A Semiconductor structure: single diode |
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PCDD1065G1_L2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Max. load current: 44A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO252AA Kind of package: reel; tape Leakage current: 70µA Max. forward impulse current: 0.55kA Power dissipation: 99.3W кількість в упаковці: 1 шт |
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PCDD1065G1_L2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Max. load current: 44A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO252AA Kind of package: reel; tape Leakage current: 70µA Max. forward impulse current: 0.55kA Power dissipation: 99.3W |
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| PCDD1065GB_L2_00601 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Max. load current: 36A Semiconductor structure: single diode Max. forward voltage: 1.4V Case: TO252AA Kind of package: reel; tape Leakage current: 0.1mA Max. forward impulse current: 664A Power dissipation: 90W кількість в упаковці: 1 шт |
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| PCDD1065GB_L2_00601 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Max. load current: 36A Semiconductor structure: single diode Max. forward voltage: 1.4V Case: TO252AA Kind of package: reel; tape Leakage current: 0.1mA Max. forward impulse current: 664A Power dissipation: 90W |
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| PCDE0465G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO263; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Max. load current: 20A Power dissipation: 46W Semiconductor structure: single diode Case: TO263 Kind of package: reel; tape Max. forward impulse current: 280A Max. forward voltage: 1.8V Leakage current: 40µA кількість в упаковці: 800 шт |
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| PCDE0465G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO263; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Max. load current: 20A Power dissipation: 46W Semiconductor structure: single diode Case: TO263 Kind of package: reel; tape Max. forward impulse current: 280A Max. forward voltage: 1.8V Leakage current: 40µA |
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| PCDE0665G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Max. load current: 28A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO263 Kind of package: reel; tape Leakage current: 50µA Max. forward impulse current: 320A Power dissipation: 62.5W кількість в упаковці: 800 шт |
товар відсутній |
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| PCDE0665G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Max. load current: 28A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO263 Kind of package: reel; tape Leakage current: 50µA Max. forward impulse current: 320A Power dissipation: 62.5W |
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| PCDE0865G1_R2_00001 | PanJit Semiconductor | PCDE0865G1-R2 SMD Schottky diodes |
товар відсутній |
| P6SMBJ28A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
на замовлення 795 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 13.56 грн |
| 32+ | 8.78 грн |
| 100+ | 7.64 грн |
| 167+ | 6.29 грн |
| 458+ | 6.02 грн |
| P6SMBJ28A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 795 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 11.3 грн |
| 54+ | 7.04 грн |
| 100+ | 6.37 грн |
| 167+ | 5.25 грн |
| 458+ | 5.02 грн |
| P6SMBJ28CA-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMBJ
на замовлення 1600 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 14.52 грн |
| 34+ | 11.24 грн |
| 100+ | 10.12 грн |
| 107+ | 8.24 грн |
| 295+ | 7.79 грн |
| P6SMBJ28CA-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
на замовлення 1600 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 17.43 грн |
| 20+ | 14.01 грн |
| 100+ | 12.14 грн |
| 107+ | 9.89 грн |
| 295+ | 9.35 грн |
| 2400+ | 8.99 грн |
| P6SMBJ30A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
на замовлення 630 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 13.56 грн |
| 32+ | 8.78 грн |
| 100+ | 7.64 грн |
| 167+ | 6.29 грн |
| 458+ | 6.02 грн |
| 2400+ | 5.75 грн |
| P6SMBJ30A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 630 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 11.3 грн |
| 54+ | 7.04 грн |
| 100+ | 6.37 грн |
| 167+ | 5.25 грн |
| 458+ | 5.02 грн |
| P6SMBJ33A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
на замовлення 70 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 15.49 грн |
| 27+ | 10.64 грн |
| 100+ | 8.63 грн |
| 167+ | 6.29 грн |
| 458+ | 6.02 грн |
| P6SMBJ33A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 70 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 12.91 грн |
| 44+ | 8.54 грн |
| P6SMBJ33CA-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMBJ
на замовлення 480 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 14.52 грн |
| 34+ | 11.24 грн |
| 100+ | 10.12 грн |
| 103+ | 8.54 грн |
| 282+ | 8.09 грн |
| P6SMBJ33CA-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
на замовлення 480 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 17.43 грн |
| 20+ | 14.01 грн |
| 100+ | 12.14 грн |
| 103+ | 10.25 грн |
| 282+ | 9.71 грн |
| 500+ | 9.62 грн |
| 800+ | 9.35 грн |
| P6SMBJ33CA_R2_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
товар відсутній
| P6SMBJ33CA_R2_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товар відсутній
| P6SMBJ36CA_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
на замовлення 775 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 13.56 грн |
| 26+ | 10.83 грн |
| 100+ | 9.44 грн |
| 140+ | 7.55 грн |
| 385+ | 7.1 грн |
| 2400+ | 6.92 грн |
| 9600+ | 6.83 грн |
| P6SMBJ36CA_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 775 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 11.3 грн |
| 44+ | 8.69 грн |
| 100+ | 7.87 грн |
| 140+ | 6.29 грн |
| 385+ | 5.92 грн |
| P6SMBJ40CA_R2_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
на замовлення 5997 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 27.11 грн |
| 16+ | 18.02 грн |
| 25+ | 13.94 грн |
| 100+ | 10.43 грн |
| 141+ | 7.46 грн |
| 389+ | 7.01 грн |
| P6SMBJ40CA_R2_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
на замовлення 5997 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 22.59 грн |
| 26+ | 14.46 грн |
| 33+ | 11.61 грн |
| 100+ | 8.69 грн |
| 141+ | 6.22 грн |
| 389+ | 5.84 грн |
| P6SMBJ48A_R2_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
товар відсутній
| P6SMBJ48A_R2_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товар відсутній
| P6SMBJ5.0A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
на замовлення 245 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 15.49 грн |
| 27+ | 10.64 грн |
| 100+ | 8.63 грн |
| 167+ | 6.29 грн |
| 458+ | 5.93 грн |
| P6SMBJ5.0A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 245 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 12.91 грн |
| 44+ | 8.54 грн |
| 100+ | 7.19 грн |
| 167+ | 5.25 грн |
| P6SMBJ5.0CA_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
на замовлення 635 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 19.37 грн |
| 22+ | 13.17 грн |
| 100+ | 10.61 грн |
| 135+ | 7.82 грн |
| 370+ | 7.46 грн |
| 9600+ | 7.37 грн |
| P6SMBJ5.0CA_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 635 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 16.14 грн |
| 36+ | 10.57 грн |
| 100+ | 8.84 грн |
| 135+ | 6.52 грн |
| 370+ | 6.22 грн |
| P6SMBJ6.0A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
на замовлення 745 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 15.49 грн |
| 27+ | 10.64 грн |
| 100+ | 8.63 грн |
| 167+ | 6.29 грн |
| 458+ | 6.02 грн |
| P6SMBJ6.0A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 745 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 12.91 грн |
| 44+ | 8.54 грн |
| 100+ | 7.19 грн |
| 167+ | 5.25 грн |
| 458+ | 5.02 грн |
| P6SMBJ7.5CA_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
на замовлення 800 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 19.37 грн |
| 22+ | 13.17 грн |
| 100+ | 10.61 грн |
| 135+ | 7.82 грн |
| 369+ | 7.46 грн |
| 9600+ | 7.37 грн |
| P6SMBJ7.5CA_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 800 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 16.14 грн |
| 36+ | 10.57 грн |
| 100+ | 8.84 грн |
| 135+ | 6.52 грн |
| 369+ | 6.22 грн |
| PBHV8110DA-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Collector current: 1A
Pulsed collector current: 3A
Type of transistor: NPN
Power dissipation: 1.25W
Polarisation: bipolar
Case: SOT23
Frequency: 100MHz
Collector-emitter voltage: 100V
Current gain: 100...300
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Collector current: 1A
Pulsed collector current: 3A
Type of transistor: NPN
Power dissipation: 1.25W
Polarisation: bipolar
Case: SOT23
Frequency: 100MHz
Collector-emitter voltage: 100V
Current gain: 100...300
на замовлення 3133 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 16.14 грн |
| 30+ | 12.89 грн |
| 100+ | 5.41 грн |
| 222+ | 3.95 грн |
| 610+ | 3.74 грн |
| PBHV8110DA-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Collector current: 1A
Pulsed collector current: 3A
Type of transistor: NPN
Power dissipation: 1.25W
Polarisation: bipolar
Case: SOT23
Frequency: 100MHz
Collector-emitter voltage: 100V
Current gain: 100...300
кількість в упаковці: 1 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Collector current: 1A
Pulsed collector current: 3A
Type of transistor: NPN
Power dissipation: 1.25W
Polarisation: bipolar
Case: SOT23
Frequency: 100MHz
Collector-emitter voltage: 100V
Current gain: 100...300
кількість в упаковці: 1 шт
на замовлення 3133 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 19.37 грн |
| 18+ | 16.06 грн |
| 100+ | 6.49 грн |
| 222+ | 4.74 грн |
| 610+ | 4.49 грн |
| 9000+ | 4.33 грн |
| PCDB0665G1_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape
Mounting: SMD
Power dissipation: 62.5W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Case: TO263
Max. off-state voltage: 650V
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 320A
Leakage current: 50µA
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape
Mounting: SMD
Power dissipation: 62.5W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Case: TO263
Max. off-state voltage: 650V
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 320A
Leakage current: 50µA
кількість в упаковці: 1 шт
товар відсутній
| PCDB0665G1_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape
Mounting: SMD
Power dissipation: 62.5W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Case: TO263
Max. off-state voltage: 650V
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 320A
Leakage current: 50µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape
Mounting: SMD
Power dissipation: 62.5W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Case: TO263
Max. off-state voltage: 650V
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 320A
Leakage current: 50µA
товар відсутній
| PCDB0865G1_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Max. load current: 36A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO263
Kind of package: reel; tape
Leakage current: 60µA
Max. forward impulse current: 0.48kA
Power dissipation: 78.5W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Max. load current: 36A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO263
Kind of package: reel; tape
Leakage current: 60µA
Max. forward impulse current: 0.48kA
Power dissipation: 78.5W
кількість в упаковці: 1 шт
товар відсутній
| PCDB0865G1_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Max. load current: 36A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO263
Kind of package: reel; tape
Leakage current: 60µA
Max. forward impulse current: 0.48kA
Power dissipation: 78.5W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Max. load current: 36A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO263
Kind of package: reel; tape
Leakage current: 60µA
Max. forward impulse current: 0.48kA
Power dissipation: 78.5W
товар відсутній
| PCDB10120G1_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO263
Max. forward voltage: 2V
Max. load current: 76A
Leakage current: 0.1mA
Max. forward impulse current: 640A
Kind of package: reel; tape
Power dissipation: 164.8W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO263
Max. forward voltage: 2V
Max. load current: 76A
Leakage current: 0.1mA
Max. forward impulse current: 640A
Kind of package: reel; tape
Power dissipation: 164.8W
кількість в упаковці: 1 шт
товар відсутній
| PCDB10120G1_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO263
Max. forward voltage: 2V
Max. load current: 76A
Leakage current: 0.1mA
Max. forward impulse current: 640A
Kind of package: reel; tape
Power dissipation: 164.8W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO263
Max. forward voltage: 2V
Max. load current: 76A
Leakage current: 0.1mA
Max. forward impulse current: 640A
Kind of package: reel; tape
Power dissipation: 164.8W
товар відсутній
| PCDB1065G1_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 650V; 10A; TO263; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO263
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 650V; 10A; TO263; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO263
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| PCDB1065G1_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 650V; 10A; TO263; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO263
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 650V; 10A; TO263; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO263
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
товар відсутній
| PCDB20120G1_R2_00001 |
|
Виробник: PanJit Semiconductor
PCDB20120G1-R2 SMD Schottky diodes
PCDB20120G1-R2 SMD Schottky diodes
товар відсутній
| PCDD0465G1_L2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 46W
Semiconductor structure: single diode
Case: TO252AA
Kind of package: reel; tape
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 46W
Semiconductor structure: single diode
Case: TO252AA
Kind of package: reel; tape
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
кількість в упаковці: 1 шт
товар відсутній
| PCDD0465G1_L2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 46W
Semiconductor structure: single diode
Case: TO252AA
Kind of package: reel; tape
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 46W
Semiconductor structure: single diode
Case: TO252AA
Kind of package: reel; tape
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
товар відсутній
| PCDD0465GB_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 17A
Power dissipation: 51W
Semiconductor structure: single diode
Case: TO252AA
Kind of package: reel; tape
Max. forward impulse current: 320A
Max. forward voltage: 1.4V
Leakage current: 0.1mA
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 17A
Power dissipation: 51W
Semiconductor structure: single diode
Case: TO252AA
Kind of package: reel; tape
Max. forward impulse current: 320A
Max. forward voltage: 1.4V
Leakage current: 0.1mA
кількість в упаковці: 1 шт
товар відсутній
| PCDD0465GB_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 17A
Power dissipation: 51W
Semiconductor structure: single diode
Case: TO252AA
Kind of package: reel; tape
Max. forward impulse current: 320A
Max. forward voltage: 1.4V
Leakage current: 0.1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 17A
Power dissipation: 51W
Semiconductor structure: single diode
Case: TO252AA
Kind of package: reel; tape
Max. forward impulse current: 320A
Max. forward voltage: 1.4V
Leakage current: 0.1mA
товар відсутній
| PCDD05120G1_L2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Max. load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 2V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 520A
Power dissipation: 120W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Max. load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 2V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 520A
Power dissipation: 120W
кількість в упаковці: 1 шт
товар відсутній
| PCDD05120G1_L2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Max. load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 2V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 520A
Power dissipation: 120W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Max. load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 2V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 520A
Power dissipation: 120W
товар відсутній
| PCDD0665G1_L2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 64.9W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 64.9W
кількість в упаковці: 1 шт
товар відсутній
| PCDD0665G1_L2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 64.9W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 64.9W
товар відсутній
| PCDD08120G1_L2_00001 |
|
Виробник: PanJit Semiconductor
PCDD08120G1-L2 SMD Schottky diodes
PCDD08120G1-L2 SMD Schottky diodes
товар відсутній
| PCDD10120G1_L2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO252AA; 200W
Mounting: SMD
Max. forward impulse current: 640A
Leakage current: 0.1mA
Case: TO252AA
Kind of package: reel; tape
Power dissipation: 200W
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. load current: 72A
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
кількість в упаковці: 3000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO252AA; 200W
Mounting: SMD
Max. forward impulse current: 640A
Leakage current: 0.1mA
Case: TO252AA
Kind of package: reel; tape
Power dissipation: 200W
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. load current: 72A
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
кількість в упаковці: 3000 шт
товар відсутній
| PCDD10120G1_L2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO252AA; 200W
Mounting: SMD
Max. forward impulse current: 640A
Leakage current: 0.1mA
Case: TO252AA
Kind of package: reel; tape
Power dissipation: 200W
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. load current: 72A
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO252AA; 200W
Mounting: SMD
Max. forward impulse current: 640A
Leakage current: 0.1mA
Case: TO252AA
Kind of package: reel; tape
Power dissipation: 200W
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. load current: 72A
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
товар відсутній
| PCDD1065G1_L2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 44A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 70µA
Max. forward impulse current: 0.55kA
Power dissipation: 99.3W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 44A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 70µA
Max. forward impulse current: 0.55kA
Power dissipation: 99.3W
кількість в упаковці: 1 шт
товар відсутній
| PCDD1065G1_L2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 44A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 70µA
Max. forward impulse current: 0.55kA
Power dissipation: 99.3W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 44A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 70µA
Max. forward impulse current: 0.55kA
Power dissipation: 99.3W
товар відсутній
| PCDD1065GB_L2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 36A
Semiconductor structure: single diode
Max. forward voltage: 1.4V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 664A
Power dissipation: 90W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 36A
Semiconductor structure: single diode
Max. forward voltage: 1.4V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 664A
Power dissipation: 90W
кількість в упаковці: 1 шт
товар відсутній
| PCDD1065GB_L2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 36A
Semiconductor structure: single diode
Max. forward voltage: 1.4V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 664A
Power dissipation: 90W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 36A
Semiconductor structure: single diode
Max. forward voltage: 1.4V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 664A
Power dissipation: 90W
товар відсутній
| PCDE0465G1_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 46W
Semiconductor structure: single diode
Case: TO263
Kind of package: reel; tape
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
кількість в упаковці: 800 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 46W
Semiconductor structure: single diode
Case: TO263
Kind of package: reel; tape
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
кількість в упаковці: 800 шт
товар відсутній
| PCDE0465G1_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 46W
Semiconductor structure: single diode
Case: TO263
Kind of package: reel; tape
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 46W
Semiconductor structure: single diode
Case: TO263
Kind of package: reel; tape
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
товар відсутній
| PCDE0665G1_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO263
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 62.5W
кількість в упаковці: 800 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO263
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 62.5W
кількість в упаковці: 800 шт
товар відсутній
| PCDE0665G1_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO263
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 62.5W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO263
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 62.5W
товар відсутній