Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1270) > Сторінка 16 з 22
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PJMF390N65EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 22A Power dissipation: 29.5W Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced |
товару немає в наявності |
||||||||||
PJMF580N60E1_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Pulsed drain current: 24A Power dissipation: 28W Gate-source voltage: ±30V On-state resistance: 0.58Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||
PJMF580N60E1_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Pulsed drain current: 24A Power dissipation: 28W Gate-source voltage: ±30V On-state resistance: 0.58Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced |
товару немає в наявності |
||||||||||
PJMF600N65E1_T0_00001 | PanJit Semiconductor | PJMF600N65E1-T0 THT N channel transistors |
товару немає в наявності |
||||||||||
PJMF990N65EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.7A Pulsed drain current: 9.5A Power dissipation: 22.5W Gate-source voltage: ±30V On-state resistance: 990mΩ Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||
PJMF990N65EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.7A Pulsed drain current: 9.5A Power dissipation: 22.5W Gate-source voltage: ±30V On-state resistance: 990mΩ Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhanced |
товару немає в наявності |
||||||||||
PJMH040N60EC_T0_00201 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Case: TO247-3 Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||
PJMH040N60EC_T0_00201 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Case: TO247-3 Mounting: THT Kind of package: tube Kind of channel: enhanced |
товару немає в наявності |
||||||||||
PJMH074N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Pulsed drain current: 117A Power dissipation: 446W Gate-source voltage: ±30V On-state resistance: 74mΩ Mounting: THT Gate charge: 84nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||
PJMH074N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Pulsed drain current: 117A Power dissipation: 446W Gate-source voltage: ±30V On-state resistance: 74mΩ Mounting: THT Gate charge: 84nC Kind of package: tube Kind of channel: enhanced |
товару немає в наявності |
||||||||||
PJMH120N60EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Pulsed drain current: 69A Power dissipation: 235W Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||
PJMH120N60EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Pulsed drain current: 69A Power dissipation: 235W Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced |
товару немає в наявності |
||||||||||
PJMH190N60E1_T0_00601 | PanJit Semiconductor | PJMH190N60E1-T0 THT N channel transistors |
товару немає в наявності |
||||||||||
PJMP120N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Pulsed drain current: 69A Power dissipation: 235W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
|
|||||||||
PJMP120N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Pulsed drain current: 69A Power dissipation: 235W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
|
|||||||||
PJMP210N65EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 42A Power dissipation: 150W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||
PJMP210N65EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 42A Power dissipation: 150W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhanced |
товару немає в наявності |
||||||||||
PJMP360N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 87.5W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18.7nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||
PJMP360N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 87.5W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18.7nC Kind of package: tube Kind of channel: enhanced |
товару немає в наявності |
||||||||||
PJMP390N65EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 22A Power dissipation: 87.5W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||
PJMP390N65EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 22A Power dissipation: 87.5W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced |
товару немає в наявності |
||||||||||
PJMP900N60EC_T0_00001 | PanJit Semiconductor | PJMP900N60EC-T0 THT N channel transistors |
товару немає в наявності |
||||||||||
PJMP990N65EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.7A Pulsed drain current: 9.5A Power dissipation: 47.5W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 990mΩ Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||
PJMP990N65EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.7A Pulsed drain current: 9.5A Power dissipation: 47.5W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 990mΩ Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhanced |
товару немає в наявності |
||||||||||
PJQ1908-AU_R1_002A1 | PanJit Semiconductor | PJQ1908-AU-R1 SMD N channel transistors |
товару немає в наявності |
||||||||||
PJQ1908_R1_00201 | PanJit Semiconductor | PJQ1908-R1 SMD N channel transistors |
товару немає в наявності |
||||||||||
PJQ2460-AU_R1_000A1 | PanJit Semiconductor | PJQ2460-AU-R1 SMD N channel transistors |
товару немає в наявності |
||||||||||
PJQ4401P-AU_R2_000A1 | PanJit Semiconductor | PJQ4401P-AU-R2 SMD P channel transistors |
товару немає в наявності |
||||||||||
PJQ4403P_R2_00001 | PanJit Semiconductor | PJQ4403P-R2 SMD P channel transistors |
товару немає в наявності |
||||||||||
PJQ4433EP-AU_R2_002A1 | PanJit Semiconductor | PJQ4433EP-AU-R2 SMD P channel transistors |
товару немає в наявності |
||||||||||
PJQ4433EP_R2_00201 | PanJit Semiconductor | PJQ4433EP-R2 SMD P channel transistors |
товару немає в наявності |
||||||||||
PJQ4435EP_R2_00201 | PanJit Semiconductor | PJQ4435EP-R2 SMD P channel transistors |
товару немає в наявності |
||||||||||
PJQ4437EP_R2_00201 | PanJit Semiconductor | PJQ4437EP-R2 SMD P channel transistors |
товару немає в наявності |
||||||||||
PJQ4439EP_R2_00201 | PanJit Semiconductor | PJQ4439EP-R2 SMD P channel transistors |
товару немає в наявності |
||||||||||
PJQ4465AP-AU_R2_000A1 | PanJit Semiconductor | PJQ4465AP-AU-R2 SMD P channel transistors |
товару немає в наявності |
||||||||||
PJQ4524P-AU_R2_002A1 | PanJit Semiconductor | PJQ4524P-AU-R2 SMD N channel transistors |
товару немає в наявності |
||||||||||
PJQ4526P-AU_R2_002A1 | PanJit Semiconductor | PJQ4526P-AU-R2 SMD N channel transistors |
товару немає в наявності |
||||||||||
PJQ4528P-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; DFN8 Kind of package: tape Polarisation: unipolar Kind of channel: enhanced Mounting: SMD Case: DFN8 Type of transistor: N-MOSFET |
товару немає в наявності |
||||||||||
PJQ4528P-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; DFN8 Kind of package: tape Polarisation: unipolar Kind of channel: enhanced Mounting: SMD Case: DFN8 Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||
PJQ4530P-AU_R2_002A1 | PanJit Semiconductor | PJQ4530P-AU-R2 SMD N channel transistors |
товару немає в наявності |
||||||||||
PJQ4534P-AU_R2_002A1 | PanJit Semiconductor | PJQ4534P-AU-R2 SMD N channel transistors |
товару немає в наявності |
||||||||||
PJQ4534P_R2_00201 | PanJit Semiconductor | PJQ4534P-R2 SMD N channel transistors |
товару немає в наявності |
||||||||||
PJQ4546P-AU_R2_002A1 | PanJit Semiconductor | PJQ4546P-AU-R2 SMD N channel transistors |
товару немає в наявності |
||||||||||
PJQ4546VP-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 61A; Idm: 244A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 61A Pulsed drain current: 244A Power dissipation: 42W Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товару немає в наявності |
||||||||||
PJQ4546VP-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 61A; Idm: 244A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 61A Pulsed drain current: 244A Power dissipation: 42W Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||
PJQ4548P-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 172A; 30W Power dissipation: 30W Mounting: SMD Kind of package: reel; tape Application: automotive industry Drain-source voltage: 40V Drain current: 43A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 13nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 172A |
товару немає в наявності |
||||||||||
PJQ4548P-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 172A; 30W Power dissipation: 30W Mounting: SMD Kind of package: reel; tape Application: automotive industry Drain-source voltage: 40V Drain current: 43A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 13nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 172A кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||
PJQ4548VP-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 30W Power dissipation: 30W Mounting: SMD Kind of package: reel; tape Application: automotive industry Drain-source voltage: 40V Drain current: 40A On-state resistance: 12.7mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 9.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 160A |
товару немає в наявності |
||||||||||
PJQ4548VP-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 30W Power dissipation: 30W Mounting: SMD Kind of package: reel; tape Application: automotive industry Drain-source voltage: 40V Drain current: 40A On-state resistance: 12.7mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 9.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 160A кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||
PJQ4576AP-AU_R2_002A1 | PanJit Semiconductor | PJQ4576AP-AU-R2 SMD N channel transistors |
товару немає в наявності |
||||||||||
PJQ4848P_R2_00001 | PanJit Semiconductor | PJQ4848P-R2 Multi channel transistors |
товару немає в наявності |
||||||||||
PJQ5439E-AU_R2_006A1 | PanJit Semiconductor | PJQ5439E-AU-R2 SMD P channel transistors |
товару немає в наявності |
||||||||||
PJQ5520-AU_R2_002A1 | PanJit Semiconductor | PJQ5520-AU-R2 SMD N channel transistors |
товару немає в наявності |
||||||||||
PJQ5522-AU_R2_002A1 | PanJit Semiconductor | PJQ5522-AU-R2 SMD N channel transistors |
товару немає в наявності |
||||||||||
PJQ5528-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; DFN5060-8 Kind of package: tape Polarisation: unipolar Case: DFN5060-8 Mounting: SMD Kind of channel: enhanced Type of transistor: N-MOSFET |
товару немає в наявності |
||||||||||
PJQ5528-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; DFN5060-8 Kind of package: tape Polarisation: unipolar Case: DFN5060-8 Mounting: SMD Kind of channel: enhanced Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||
PJQ5534-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; DFN5060-8 Polarisation: unipolar Kind of package: tape Kind of channel: enhanced Mounting: SMD Case: DFN5060-8 Type of transistor: N-MOSFET |
товару немає в наявності |
||||||||||
PJQ5534-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; DFN5060-8 Polarisation: unipolar Kind of package: tape Kind of channel: enhanced Mounting: SMD Case: DFN5060-8 Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||
PJQ5540V-AU_R2_002A1 | PanJit Semiconductor | PJQ5540V-AU-R2 SMD N channel transistors |
товару немає в наявності |
||||||||||
PJQ5542V-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 544A; 100W Application: automotive industry Power dissipation: 100W Polarisation: unipolar Kind of package: reel; tape Gate charge: 43nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 544A Mounting: SMD Drain-source voltage: 40V Drain current: 136A On-state resistance: 3.6mΩ Type of transistor: N-MOSFET |
товару немає в наявності |
PJMF390N65EC_T0_00001 |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 29.5W
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 29.5W
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
товару немає в наявності
PJMF580N60E1_T0_00001 |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
PJMF580N60E1_T0_00001 |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
товару немає в наявності
PJMF600N65E1_T0_00001 |
Виробник: PanJit Semiconductor
PJMF600N65E1-T0 THT N channel transistors
PJMF600N65E1-T0 THT N channel transistors
товару немає в наявності
PJMF990N65EC_T0_00001 |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
PJMF990N65EC_T0_00001 |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhanced
товару немає в наявності
PJMH040N60EC_T0_00201 |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
PJMH040N60EC_T0_00201 |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товару немає в наявності
PJMH074N60FRC_T0_00601 |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
PJMH074N60FRC_T0_00601 |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhanced
товару немає в наявності
PJMH120N60EC_T0_00601 |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 235W
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 235W
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
PJMH120N60EC_T0_00601 |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 235W
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 235W
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
товару немає в наявності
PJMH190N60E1_T0_00601 |
Виробник: PanJit Semiconductor
PJMH190N60E1-T0 THT N channel transistors
PJMH190N60E1-T0 THT N channel transistors
товару немає в наявності
PJMP120N60EC_T0_00001 |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 262.08 грн |
8+ | 144.67 грн |
21+ | 132.26 грн |
1000+ | 130.5 грн |
PJMP120N60EC_T0_00001 |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 30 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 218.4 грн |
8+ | 116.1 грн |
21+ | 110.22 грн |
PJMP210N65EC_T0_00601 |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
PJMP210N65EC_T0_00601 |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
товару немає в наявності
PJMP360N60EC_T0_00001 |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
PJMP360N60EC_T0_00001 |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhanced
товару немає в наявності
PJMP390N65EC_T0_00001 |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
PJMP390N65EC_T0_00001 |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
товару немає в наявності
PJMP900N60EC_T0_00001 |
Виробник: PanJit Semiconductor
PJMP900N60EC-T0 THT N channel transistors
PJMP900N60EC-T0 THT N channel transistors
товару немає в наявності
PJMP990N65EC_T0_00001 |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 47.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 47.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
PJMP990N65EC_T0_00001 |
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 47.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 47.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhanced
товару немає в наявності
PJQ1908-AU_R1_002A1 |
Виробник: PanJit Semiconductor
PJQ1908-AU-R1 SMD N channel transistors
PJQ1908-AU-R1 SMD N channel transistors
товару немає в наявності
PJQ1908_R1_00201 |
Виробник: PanJit Semiconductor
PJQ1908-R1 SMD N channel transistors
PJQ1908-R1 SMD N channel transistors
товару немає в наявності
PJQ2460-AU_R1_000A1 |
Виробник: PanJit Semiconductor
PJQ2460-AU-R1 SMD N channel transistors
PJQ2460-AU-R1 SMD N channel transistors
товару немає в наявності
PJQ4401P-AU_R2_000A1 |
Виробник: PanJit Semiconductor
PJQ4401P-AU-R2 SMD P channel transistors
PJQ4401P-AU-R2 SMD P channel transistors
товару немає в наявності
PJQ4403P_R2_00001 |
Виробник: PanJit Semiconductor
PJQ4403P-R2 SMD P channel transistors
PJQ4403P-R2 SMD P channel transistors
товару немає в наявності
PJQ4433EP-AU_R2_002A1 |
Виробник: PanJit Semiconductor
PJQ4433EP-AU-R2 SMD P channel transistors
PJQ4433EP-AU-R2 SMD P channel transistors
товару немає в наявності
PJQ4433EP_R2_00201 |
Виробник: PanJit Semiconductor
PJQ4433EP-R2 SMD P channel transistors
PJQ4433EP-R2 SMD P channel transistors
товару немає в наявності
PJQ4435EP_R2_00201 |
Виробник: PanJit Semiconductor
PJQ4435EP-R2 SMD P channel transistors
PJQ4435EP-R2 SMD P channel transistors
товару немає в наявності
PJQ4437EP_R2_00201 |
Виробник: PanJit Semiconductor
PJQ4437EP-R2 SMD P channel transistors
PJQ4437EP-R2 SMD P channel transistors
товару немає в наявності
PJQ4439EP_R2_00201 |
Виробник: PanJit Semiconductor
PJQ4439EP-R2 SMD P channel transistors
PJQ4439EP-R2 SMD P channel transistors
товару немає в наявності
PJQ4465AP-AU_R2_000A1 |
Виробник: PanJit Semiconductor
PJQ4465AP-AU-R2 SMD P channel transistors
PJQ4465AP-AU-R2 SMD P channel transistors
товару немає в наявності
PJQ4524P-AU_R2_002A1 |
Виробник: PanJit Semiconductor
PJQ4524P-AU-R2 SMD N channel transistors
PJQ4524P-AU-R2 SMD N channel transistors
товару немає в наявності
PJQ4526P-AU_R2_002A1 |
Виробник: PanJit Semiconductor
PJQ4526P-AU-R2 SMD N channel transistors
PJQ4526P-AU-R2 SMD N channel transistors
товару немає в наявності
PJQ4528P-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; DFN8
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Mounting: SMD
Case: DFN8
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; DFN8
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Mounting: SMD
Case: DFN8
Type of transistor: N-MOSFET
товару немає в наявності
PJQ4528P-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; DFN8
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Mounting: SMD
Case: DFN8
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; DFN8
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Mounting: SMD
Case: DFN8
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товару немає в наявності
PJQ4530P-AU_R2_002A1 |
Виробник: PanJit Semiconductor
PJQ4530P-AU-R2 SMD N channel transistors
PJQ4530P-AU-R2 SMD N channel transistors
товару немає в наявності
PJQ4534P-AU_R2_002A1 |
Виробник: PanJit Semiconductor
PJQ4534P-AU-R2 SMD N channel transistors
PJQ4534P-AU-R2 SMD N channel transistors
товару немає в наявності
PJQ4534P_R2_00201 |
Виробник: PanJit Semiconductor
PJQ4534P-R2 SMD N channel transistors
PJQ4534P-R2 SMD N channel transistors
товару немає в наявності
PJQ4546P-AU_R2_002A1 |
Виробник: PanJit Semiconductor
PJQ4546P-AU-R2 SMD N channel transistors
PJQ4546P-AU-R2 SMD N channel transistors
товару немає в наявності
PJQ4546VP-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61A; Idm: 244A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 42W
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61A; Idm: 244A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 42W
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товару немає в наявності
PJQ4546VP-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61A; Idm: 244A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 42W
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61A; Idm: 244A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 42W
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товару немає в наявності
PJQ4548P-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 172A; 30W
Power dissipation: 30W
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 40V
Drain current: 43A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 172A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 172A; 30W
Power dissipation: 30W
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 40V
Drain current: 43A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 172A
товару немає в наявності
PJQ4548P-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 172A; 30W
Power dissipation: 30W
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 40V
Drain current: 43A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 172A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 172A; 30W
Power dissipation: 30W
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 40V
Drain current: 43A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 172A
кількість в упаковці: 1 шт
товару немає в наявності
PJQ4548VP-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 30W
Power dissipation: 30W
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 12.7mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 30W
Power dissipation: 30W
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 12.7mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
товару немає в наявності
PJQ4548VP-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 30W
Power dissipation: 30W
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 12.7mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 30W
Power dissipation: 30W
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 12.7mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
кількість в упаковці: 1 шт
товару немає в наявності
PJQ4576AP-AU_R2_002A1 |
Виробник: PanJit Semiconductor
PJQ4576AP-AU-R2 SMD N channel transistors
PJQ4576AP-AU-R2 SMD N channel transistors
товару немає в наявності
PJQ4848P_R2_00001 |
Виробник: PanJit Semiconductor
PJQ4848P-R2 Multi channel transistors
PJQ4848P-R2 Multi channel transistors
товару немає в наявності
PJQ5439E-AU_R2_006A1 |
Виробник: PanJit Semiconductor
PJQ5439E-AU-R2 SMD P channel transistors
PJQ5439E-AU-R2 SMD P channel transistors
товару немає в наявності
PJQ5520-AU_R2_002A1 |
Виробник: PanJit Semiconductor
PJQ5520-AU-R2 SMD N channel transistors
PJQ5520-AU-R2 SMD N channel transistors
товару немає в наявності
PJQ5522-AU_R2_002A1 |
Виробник: PanJit Semiconductor
PJQ5522-AU-R2 SMD N channel transistors
PJQ5522-AU-R2 SMD N channel transistors
товару немає в наявності
PJQ5528-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; DFN5060-8
Kind of package: tape
Polarisation: unipolar
Case: DFN5060-8
Mounting: SMD
Kind of channel: enhanced
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; DFN5060-8
Kind of package: tape
Polarisation: unipolar
Case: DFN5060-8
Mounting: SMD
Kind of channel: enhanced
Type of transistor: N-MOSFET
товару немає в наявності
PJQ5528-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; DFN5060-8
Kind of package: tape
Polarisation: unipolar
Case: DFN5060-8
Mounting: SMD
Kind of channel: enhanced
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; DFN5060-8
Kind of package: tape
Polarisation: unipolar
Case: DFN5060-8
Mounting: SMD
Kind of channel: enhanced
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товару немає в наявності
PJQ5534-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; DFN5060-8
Polarisation: unipolar
Kind of package: tape
Kind of channel: enhanced
Mounting: SMD
Case: DFN5060-8
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; DFN5060-8
Polarisation: unipolar
Kind of package: tape
Kind of channel: enhanced
Mounting: SMD
Case: DFN5060-8
Type of transistor: N-MOSFET
товару немає в наявності
PJQ5534-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; DFN5060-8
Polarisation: unipolar
Kind of package: tape
Kind of channel: enhanced
Mounting: SMD
Case: DFN5060-8
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; DFN5060-8
Polarisation: unipolar
Kind of package: tape
Kind of channel: enhanced
Mounting: SMD
Case: DFN5060-8
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товару немає в наявності
PJQ5540V-AU_R2_002A1 |
Виробник: PanJit Semiconductor
PJQ5540V-AU-R2 SMD N channel transistors
PJQ5540V-AU-R2 SMD N channel transistors
товару немає в наявності
PJQ5542V-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 544A; 100W
Application: automotive industry
Power dissipation: 100W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 544A
Mounting: SMD
Drain-source voltage: 40V
Drain current: 136A
On-state resistance: 3.6mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 544A; 100W
Application: automotive industry
Power dissipation: 100W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 544A
Mounting: SMD
Drain-source voltage: 40V
Drain current: 136A
On-state resistance: 3.6mΩ
Type of transistor: N-MOSFET
товару немає в наявності