Продукція > PANJIT SEMICONDUCTOR > PSMB055N08NS1_T0_00601

PSMB055N08NS1_T0_00601 PanJit Semiconductor


Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис PSMB055N08NS1_T0_00601 PanJit Semiconductor

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 80V, Drain current: 108A, Pulsed drain current: 360A, Power dissipation: 113.6W, Case: TO263, Gate-source voltage: ±20V, On-state resistance: 7mΩ, Mounting: SMD, Gate charge: 65.8nC, Kind of package: tube, Kind of channel: enhanced, кількість в упаковці: 1 шт.

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PSMB055N08NS1_T0_00601 Виробник : PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній