PCDD05120G1_L2_00001 Panjit International Inc.
Виробник: Panjit International Inc.Description: 1200V SIC SCHOTTKY BARRIER DIODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 252pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 3537 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 335.57 грн |
| 10+ | 271.29 грн |
| 100+ | 219.5 грн |
| 500+ | 183.1 грн |
| 1000+ | 156.78 грн |
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Технічний опис PCDD05120G1_L2_00001 Panjit International Inc.
Description: 1200V SIC SCHOTTKY BARRIER DIODE, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 252pF @ 1V, 1MHz, Current - Average Rectified (Io): 5A, Supplier Device Package: TO-252AA, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V.
Інші пропозиції PCDD05120G1_L2_00001 за ціною від 151.9 грн до 364.42 грн
| Фото | Назва | Виробник | Інформація |
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PCDD05120G1_L2_00001 | Виробник : Panjit |
Schottky Diodes & Rectifiers 1200V SiC Schottky Barrier Diode |
на замовлення 4033 шт: термін постачання 21-30 дні (днів) |
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PCDD05120G1_L2_00001 | Виробник : PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252AA; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Max. load current: 40A Semiconductor structure: single diode Max. forward voltage: 2V Case: TO252AA Kind of package: reel; tape Leakage current: 50µA Max. forward impulse current: 520A Power dissipation: 120W кількість в упаковці: 1 шт |
товар відсутній |
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PCDD05120G1_L2_00001 | Виробник : Panjit International Inc. |
Description: 1200V SIC SCHOTTKY BARRIER DIODE Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 252pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
товар відсутній |
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PCDD05120G1_L2_00001 | Виробник : PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252AA; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Max. load current: 40A Semiconductor structure: single diode Max. forward voltage: 2V Case: TO252AA Kind of package: reel; tape Leakage current: 50µA Max. forward impulse current: 520A Power dissipation: 120W |
товар відсутній |