PCDE0465G1_R2_00001 PanJit Semiconductor


Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 46W
Semiconductor structure: single diode
Case: TO263
Kind of package: reel; tape
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
кількість в упаковці: 800 шт
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Технічний опис PCDE0465G1_R2_00001 PanJit Semiconductor

Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO263; reel,tape, Type of diode: Schottky rectifying, Technology: SiC, Mounting: SMD, Max. off-state voltage: 650V, Load current: 4A, Max. load current: 20A, Power dissipation: 46W, Semiconductor structure: single diode, Case: TO263, Kind of package: reel; tape, Max. forward impulse current: 280A, Max. forward voltage: 1.8V, Leakage current: 40µA, кількість в упаковці: 800 шт.

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PCDE0465G1_R2_00001 Виробник : PanJit Semiconductor Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 46W
Semiconductor structure: single diode
Case: TO263
Kind of package: reel; tape
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
товар відсутній