PCDB0665G1_R2_00001 Panjit International Inc.
Виробник: Panjit International Inc.Description: 650V SIC SCHOTTKY BARRIER DIODE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 228pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 94.36 грн |
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Технічний опис PCDB0665G1_R2_00001 Panjit International Inc.
Description: 650V SIC SCHOTTKY BARRIER DIODE, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 228pF @ 1V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: TO-263, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.
Інші пропозиції PCDB0665G1_R2_00001 за ціною від 91.28 грн до 219.65 грн
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PCDB0665G1_R2_00001 | Виробник : Panjit International Inc. |
Description: 650V SIC SCHOTTKY BARRIER DIODE Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 228pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-263 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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PCDB0665G1_R2_00001 | Виробник : Panjit |
Schottky Diodes & Rectifiers 650V SiC Schottky Barrier Diode |
на замовлення 2400 шт: термін постачання 21-30 дні (днів) |
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| PCDB0665G1_R2_00001 | Виробник : PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape Mounting: SMD Power dissipation: 62.5W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Case: TO263 Max. off-state voltage: 650V Max. load current: 28A Max. forward voltage: 1.8V Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 320A Leakage current: 50µA кількість в упаковці: 1 шт |
товар відсутній |
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| PCDB0665G1_R2_00001 | Виробник : PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape Mounting: SMD Power dissipation: 62.5W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Case: TO263 Max. off-state voltage: 650V Max. load current: 28A Max. forward voltage: 1.8V Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 320A Leakage current: 50µA |
товар відсутній |