Продукція > IXX
Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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IXX0107100 | UT | QFP | на замовлення 1600 шт: термін постачання 14-28 дні (днів) | |||||||||||||||
IXX0107100 | UT | на замовлення 800 шт: термін постачання 14-28 дні (днів) | ||||||||||||||||
IXX0107100 | UT | QFP | на замовлення 3800 шт: термін постачання 14-28 дні (днів) | |||||||||||||||
IXX0169600 | 07+ | на замовлення 1000 шт: термін постачання 14-28 дні (днів) | ||||||||||||||||
IXX0169600 | 07+ | на замовлення 1000 шт: термін постачання 14-28 дні (днів) | ||||||||||||||||
IXXA30N65C3HV | IXYS | Description: IGBT | товар відсутній | |||||||||||||||
IXXA30N65C3HV | IXYS | IGBTs TO263 650V 30A XPT | товар відсутній | |||||||||||||||
IXXA50N60B3 | Littelfuse | Trans IGBT Chip N-CH 600V 120A 600000mW 3-Pin(2+Tab) TO-263AA | товар відсутній | |||||||||||||||
IXXA50N60B3 | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO263 Type of transistor: IGBT Technology: GenX3™; XPT™ Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 600W Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: SMD Gate charge: 70nC Kind of package: tube Turn-on time: 75ns Turn-off time: 320ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXA50N60B3 | IXYS | IGBTs TO220 600V 50A XPT | товар відсутній | |||||||||||||||
IXXA50N60B3 | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO263 Type of transistor: IGBT Technology: GenX3™; XPT™ Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 600W Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: SMD Gate charge: 70nC Kind of package: tube Turn-on time: 75ns Turn-off time: 320ns | товар відсутній | |||||||||||||||
IXXA50N60B3 | IXYS | Description: IGBT Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A Supplier Device Package: TO-263AA Td (on/off) @ 25°C: 27ns/150ns Switching Energy: 670µJ (on), 1.2mJ (off) Test Condition: 360V, 36A, 5Ohm, 15V Gate Charge: 70 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 600 W | товар відсутній | |||||||||||||||
IXXH100N60B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3 Mounting: THT Gate charge: 143nC Technology: GenX3™; Planar; XPT™ Case: TO247-3 Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 480A Turn-on time: 92ns Turn-off time: 350ns Type of transistor: IGBT Power dissipation: 830W Kind of package: tube кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXH100N60B3 | IXYS | IGBTs XPT IGBT B3-Class 600V/210Amp | на замовлення 260 шт: термін постачання 21-30 дні (днів) |
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IXXH100N60B3 | Littelfuse | Trans IGBT Chip N-CH 600V 220A 830000mW 3-Pin(3+Tab) TO-247AD | товар відсутній | |||||||||||||||
IXXH100N60B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3 Mounting: THT Gate charge: 143nC Technology: GenX3™; Planar; XPT™ Case: TO247-3 Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 480A Turn-on time: 92ns Turn-off time: 350ns Type of transistor: IGBT Power dissipation: 830W Kind of package: tube | товар відсутній | |||||||||||||||
IXXH100N60B3 | IXYS | Description: IGBT 600V 220A 830W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 30ns/120ns Switching Energy: 1.9mJ (on), 2mJ (off) Test Condition: 360V, 70A, 2Ohm, 15V Gate Charge: 143 nC Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 480 A Power - Max: 830 W | на замовлення 16 шт: термін постачання 21-31 дні (днів) |
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IXXH100N60B3 | Littelfuse | Trans IGBT Chip N-CH 600V 220A 830000mW 3-Pin(3+Tab) TO-247AD | на замовлення 14 шт: термін постачання 21-31 дні (днів) |
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IXXH100N60B3 | Littelfuse | Trans IGBT Chip N-CH 600V 220A 830000mW 3-Pin(3+Tab) TO-247AD | товар відсутній | |||||||||||||||
IXXH100N60C3 | IXYS | Description: IGBT 600V 190A 830W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 30ns/90ns Switching Energy: 2mJ (on), 950µJ (off) Test Condition: 360V, 70A, 2Ohm, 15V Gate Charge: 150 nC Part Status: Active Current - Collector (Ic) (Max): 190 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 380 A Power - Max: 830 W | на замовлення 19 шт: термін постачання 21-31 дні (днів) |
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IXXH100N60C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3 Mounting: THT Power dissipation: 830W Kind of package: tube Gate charge: 150nC Technology: GenX3™; Planar; XPT™ Case: TO247-3 Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 380A Turn-on time: 95s Turn-off time: 0.22µs Type of transistor: IGBT кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXH100N60C3 | IXYS | IGBT Transistors XPT IGBT C3-Class 600V/190Amp | на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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IXXH100N60C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3 Mounting: THT Power dissipation: 830W Kind of package: tube Gate charge: 150nC Technology: GenX3™; Planar; XPT™ Case: TO247-3 Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 380A Turn-on time: 95s Turn-off time: 0.22µs Type of transistor: IGBT | товар відсутній | |||||||||||||||
IXXH110N65B4 | IXYS | IGBTs TO247 650V 110A XPT | товар відсутній | |||||||||||||||
IXXH110N65B4 | IXYS | Description: DISC IGBT XPT-GENX4 TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 26ns/146ns Switching Energy: 2.2mJ (on), 1.05mJ (off) Test Condition: 400V, 55A, 2Ohm, 15V Gate Charge: 183 nC Part Status: Active Current - Collector (Ic) (Max): 250 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 570 A Power - Max: 880 W | товар відсутній | |||||||||||||||
IXXH110N65C4 | IXYS | Description: IGBT 650V 234A 880W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 35ns/143ns Switching Energy: 2.3mJ (on), 600µJ (off) Test Condition: 400V, 55A, 2Ohm, 15V Gate Charge: 180 nC Part Status: Active Current - Collector (Ic) (Max): 234 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 600 A Power - Max: 880 W | товар відсутній | |||||||||||||||
IXXH110N65C4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 110A Power dissipation: 880W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 600A Mounting: THT Gate charge: 167nC Kind of package: tube Turn-on time: 71ns Turn-off time: 160ns кількість в упаковці: 1 шт | на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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IXXH110N65C4 | Littelfuse | Trans IGBT Chip N-CH 650V 234A 880000mW 3-Pin(3+Tab) TO-247AD | товар відсутній | |||||||||||||||
IXXH110N65C4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 110A Power dissipation: 880W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 600A Mounting: THT Gate charge: 167nC Kind of package: tube Turn-on time: 71ns Turn-off time: 160ns | на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXXH110N65C4 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXXH110N65C4 - IGBT, 235 A, 2.06 V, 880 W, 650 V, TO-247AD, 3 Pin(s) Kollektor-Emitter-Spannung, max.: 650 Verlustleistung: 880 Anzahl der Pins: 3 Kontinuierlicher Kollektorstrom: 235 Bauform - Transistor: TO-247AD Kollektor-Emitter-Sättigungsspannung: 2.06 Betriebstemperatur, max.: 175 Produktpalette: XPT GenX4 SVHC: No SVHC (16-Jan-2020) | на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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IXXH110N65C4 | Littelfuse | Trans IGBT Chip N-CH 650V 234A 880000mW 3-Pin(3+Tab) TO-247AD | на замовлення 2 шт: термін постачання 21-31 дні (днів) | |||||||||||||||
IXXH110N65C4 | IXYS | IGBTs 650V/234A TRENCH IGBT GENX4 XPT | на замовлення 300 шт: термін постачання 343-352 дні (днів) |
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IXXH140N65B4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 140A Power dissipation: 1.2kW Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 840A Mounting: THT Gate charge: 250nC Kind of package: tube Turn-on time: 128ns Turn-off time: 340ns | товар відсутній | |||||||||||||||
IXXH140N65B4 | IXYS | IGBTs TO247 650V 140A XPT | товар відсутній | |||||||||||||||
IXXH140N65B4 | IXYS | Description: DISC IGBT XPT-GENX4 TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 54ns/270ns Switching Energy: 5.75mJ (on), 2.67mJ (off) Test Condition: 400V, 100A, 4.7Ohm, 15V Gate Charge: 250 nC Current - Collector (Ic) (Max): 340 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 840 A Power - Max: 1200 W | товар відсутній | |||||||||||||||
IXXH140N65B4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 140A Power dissipation: 1.2kW Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 840A Mounting: THT Gate charge: 250nC Kind of package: tube Turn-on time: 128ns Turn-off time: 340ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXH140N65C4 | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | товар відсутній | |||||||||||||||
IXXH140N65C4 | IXYS | IGBTs IGBT XPT | товар відсутній | |||||||||||||||
IXXH140N65C4 | IXYS | Description: DISC IGBT XPT-GENX4 TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 120A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 43ns/240ns Switching Energy: 4.9mJ (on), 1.7mJ (off) Test Condition: 400V, 75A, 4.7Ohm, 15V Gate Charge: 250 nC Current - Collector (Ic) (Max): 320 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 730 A Power - Max: 1200 W | товар відсутній | |||||||||||||||
IXXH140N65C4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 140A Power dissipation: 1.2kW Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 730A Mounting: THT Gate charge: 250nC Kind of package: tube Turn-on time: 114ns Turn-off time: 273ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXH140N65C4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 140A Power dissipation: 1.2kW Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 730A Mounting: THT Gate charge: 250nC Kind of package: tube Turn-on time: 114ns Turn-off time: 273ns | товар відсутній | |||||||||||||||
IXXH150N60C3 | IXYS | Description: IGBT 600V TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 34ns/120ns Switching Energy: 3.4mJ (on), 1.8mJ (off) Test Condition: 400V, 75A, 2Ohm, 15V Gate Charge: 200 nC Part Status: Active Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 1360 W | на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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IXXH150N60C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 150A Power dissipation: 1.36kW Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 700A Mounting: THT Gate charge: 200nC Kind of package: tube Turn-on time: 0.1µs Turn-off time: 230ns кількість в упаковці: 1 шт | на замовлення 63 шт: термін постачання 14-21 дні (днів) |
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IXXH150N60C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 150A Power dissipation: 1.36kW Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 700A Mounting: THT Gate charge: 200nC Kind of package: tube Turn-on time: 0.1µs Turn-off time: 230ns | на замовлення 63 шт: термін постачання 21-30 дні (днів) |
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IXXH150N60C3 | Littelfuse | Trans IGBT Chip N-CH 600V 300A 1360000mW | на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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IXXH150N60C3 | IXYS | IGBTs TO247 600V 150A XPT | на замовлення 307 шт: термін постачання 21-30 дні (днів) |
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IXXH30N60B3 | Littelfuse | Trans IGBT Chip N-CH 600V 60A 270000mW 3-Pin(3+Tab) TO-247AD | товар відсутній | |||||||||||||||
IXXH30N60B3 | IXYS | IGBTs TO247 600V 30A XPT | товар відсутній | |||||||||||||||
IXXH30N60B3 | IXYS | Description: IGBT 600V TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 23ns/97ns Switching Energy: 550µJ (on), 500µJ (off) Test Condition: 400V, 24A, 10Ohm, 15V Gate Charge: 39 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 115 A Power - Max: 270 W | товар відсутній | |||||||||||||||
IXXH30N60B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 270W Case: TO247AD Gate-emitter voltage: ±20V Pulsed collector current: 115A Mounting: THT Gate charge: 39nC Kind of package: tube Turn-on time: 23ns Turn-off time: 125ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXH30N60B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 270W Case: TO247AD Gate-emitter voltage: ±20V Pulsed collector current: 115A Mounting: THT Gate charge: 39nC Kind of package: tube Turn-on time: 23ns Turn-off time: 125ns | товар відсутній | |||||||||||||||
IXXH30N60B3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 60A 270W 3-Pin(3+Tab) TO-247AD | товар відсутній | |||||||||||||||
IXXH30N60B3D1 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXXH30N60B3D1 - IGBT, 60 A, 1.66 V, 270 W, 600 V, TO-247AD, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.66V usEccn: EAR99 euEccn: NLR Verlustleistung: 270W Bauform - Transistor: TO-247AD Anzahl der Pins: 3Pin(s) Produktpalette: XPT GenX3 Kollektor-Emitter-Spannung, max.: 600V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 60A SVHC: No SVHC (12-Jan-2017) | на замовлення 153 шт: термін постачання 21-31 дні (днів) |
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IXXH30N60B3D1 | IXYS | Description: IGBT 600V 60A 270W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 23ns/97ns Switching Energy: 550µJ (on), 500µJ (off) Test Condition: 400V, 24A, 10Ohm, 15V Gate Charge: 39 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 115 A Power - Max: 270 W | на замовлення 1169 шт: термін постачання 21-31 дні (днів) |
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IXXH30N60B3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 270W Case: TO247AD Gate-emitter voltage: ±20V Pulsed collector current: 115A Mounting: THT Gate charge: 39nC Kind of package: tube Turn-on time: 23ns Turn-off time: 125ns кількість в упаковці: 1 шт | на замовлення 106 шт: термін постачання 14-21 дні (днів) |
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IXXH30N60B3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 60A 270W 3-Pin(3+Tab) TO-247AD | на замовлення 26 шт: термін постачання 21-31 дні (днів) |
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IXXH30N60B3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 270W Case: TO247AD Gate-emitter voltage: ±20V Pulsed collector current: 115A Mounting: THT Gate charge: 39nC Kind of package: tube Turn-on time: 23ns Turn-off time: 125ns | на замовлення 106 шт: термін постачання 21-30 дні (днів) |
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IXXH30N60B3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 60A 270000mW 3-Pin(3+Tab) TO-247AD | товар відсутній | |||||||||||||||
IXXH30N60B3D1 | IXYS | IGBTs XPT 600V IGBT GenX3 XPT IGBT | на замовлення 467 шт: термін постачання 21-30 дні (днів) |
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IXXH30N60C3 | IXYS | IGBTs TO247 600V 60A IGBT | товар відсутній | |||||||||||||||
IXXH30N60C3 | IXYS | Description: DISC IGBT XPT-GENX3 TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 33 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 24A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 23ns/77ns Switching Energy: 500µJ (on), 270µJ (off) Test Condition: 400V, 24A, 10Ohm, 15V Gate Charge: 37 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 110 A Power - Max: 270 W | товар відсутній | |||||||||||||||
IXXH30N60C3D1 | IXYS | IGBTs XPT 600V IGBT 30A | на замовлення 173 шт: термін постачання 21-30 дні (днів) |
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IXXH30N60C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 270W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 110A Mounting: THT Gate charge: 37nC Kind of package: tube Turn-on time: 37ns Turn-off time: 166ns | товар відсутній | |||||||||||||||
IXXH30N60C3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 60A 270000mW 3-Pin(3+Tab) TO-247AD | товар відсутній | |||||||||||||||
IXXH30N60C3D1 | IXYS | Description: IGBT 600V 60A 270W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 23ns/77ns Switching Energy: 500µJ (on), 270µJ (off) Test Condition: 400V, 24A, 10Ohm, 15V Gate Charge: 37 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 110 A Power - Max: 270 W | на замовлення 66 шт: термін постачання 21-31 дні (днів) |
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IXXH30N60C3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 60A 270000mW 3-Pin(3+Tab) TO-247AD | на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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IXXH30N60C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 270W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 110A Mounting: THT Gate charge: 37nC Kind of package: tube Turn-on time: 37ns Turn-off time: 166ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXH30N65B4 | Littelfuse | Trans IGBT Chip N-CH 650V 70A 230000mW 3-Pin(3+Tab) TO-247AD | товар відсутній | |||||||||||||||
IXXH30N65B4 | IXYS | Description: IGBT PT 650V 65A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 32ns/170ns Switching Energy: 1.55mJ (on), 480µJ (off) Test Condition: 400V, 30A, 15Ohm, 15V Gate Charge: 52 nC Part Status: Active Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 146 A Power - Max: 230 W | на замовлення 58 шт: термін постачання 21-31 дні (днів) |
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IXXH30N65B4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 230W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 146A Mounting: THT Gate charge: 52nC Kind of package: tube Turn-on time: 65ns Turn-off time: 206ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXH30N65B4 | IXYS | IGBTs 650V/65A Trench IGBT GenX4 XPT | на замовлення 349 шт: термін постачання 21-30 дні (днів) |
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IXXH30N65B4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 230W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 146A Mounting: THT Gate charge: 52nC Kind of package: tube Turn-on time: 65ns Turn-off time: 206ns | товар відсутній | |||||||||||||||
IXXH30N65B4D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 230W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 146A Mounting: THT Gate charge: 52nC Kind of package: tube Turn-on time: 65ns Turn-off time: 206ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXH30N65B4D1 | IXYS | IGBTs Disc IGBT XPT-GenX4 TO-247AD | товар відсутній | |||||||||||||||
IXXH30N65B4D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 230W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 146A Mounting: THT Gate charge: 52nC Kind of package: tube Turn-on time: 65ns Turn-off time: 206ns | товар відсутній | |||||||||||||||
IXXH30N65B4D1 | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | товар відсутній | |||||||||||||||
IXXH30N65C4D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 230W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 136A Mounting: THT Gate charge: 47nC Kind of package: tube Turn-on time: 65ns Turn-off time: 161ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXH30N65C4D1 | IXYS | IGBTs Disc IGBT XPT-GenX4 TO-247AD | товар відсутній | |||||||||||||||
IXXH30N65C4D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 230W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 136A Mounting: THT Gate charge: 47nC Kind of package: tube Turn-on time: 65ns Turn-off time: 161ns | товар відсутній | |||||||||||||||
IXXH40N65B4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 455W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-on time: 67ns Turn-off time: 252ns кількість в упаковці: 1 шт | на замовлення 138 шт: термін постачання 14-21 дні (днів) |
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IXXH40N65B4 | IXYS | IGBTs 650V/120A TRENCH IGBT GENX4 XPT | на замовлення 298 шт: термін постачання 21-30 дні (днів) |
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IXXH40N65B4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 455W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-on time: 67ns Turn-off time: 252ns | на замовлення 138 шт: термін постачання 21-30 дні (днів) |
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IXXH40N65B4 | IXYS | Description: IGBT 650V 120A 455W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 28ns/144ns Switching Energy: 1.4mJ (on), 560µJ (off) Test Condition: 400V, 40A, 5Ohm, 15V Gate Charge: 77 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 455 W | на замовлення 750 шт: термін постачання 21-31 дні (днів) |
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IXXH40N65B4D1 | IXYS | IGBTs Disc IGBT XPT-GenX4 TO-247AD | товар відсутній | |||||||||||||||
IXXH40N65B4D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 455W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-on time: 67ns Turn-off time: 252ns | товар відсутній | |||||||||||||||
IXXH40N65B4D1 | IXYS | Description: IGBT Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 20ns/115ns Switching Energy: 1.4mJ (on), 800µJ (off) Test Condition: 400V, 40A, 5Ohm, 15V Gate Charge: 66 nC Current - Collector (Ic) (Max): 115 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 225 A Power - Max: 455 W | товар відсутній | |||||||||||||||
IXXH40N65B4D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 455W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-on time: 67ns Turn-off time: 252ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXH40N65B4H1 | Littelfuse | Trans IGBT Chip N-CH 650V 120A 455W 3-Pin(3+Tab) TO-247AD | товар відсутній | |||||||||||||||
IXXH40N65B4H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 455W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-on time: 61ns Turn-off time: 207ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXH40N65B4H1 | IXYS | IGBTs TO247 650V 40A GENX4 | товар відсутній | |||||||||||||||
IXXH40N65B4H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 455W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-on time: 61ns Turn-off time: 207ns | товар відсутній | |||||||||||||||
IXXH40N65B4H1 | IXYS | Description: IGBT 650V 120A 455W TO247AD Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 120 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 28ns/144ns Switching Energy: 1.4mJ (on), 560µJ (off) Test Condition: 400V, 40A, 5Ohm, 15V Gate Charge: 77 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 455 W | товар відсутній | |||||||||||||||
IXXH40N65C4D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 455W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 215A Mounting: THT Gate charge: 68nC Kind of package: tube Turn-on time: 71ns Turn-off time: 142ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXH40N65C4D1 | IXYS | IGBTs Disc IGBT XPT-GenX4 TO-247AD | товар відсутній | |||||||||||||||
IXXH40N65C4D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 455W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 215A Mounting: THT Gate charge: 68nC Kind of package: tube Turn-on time: 71ns Turn-off time: 142ns | товар відсутній | |||||||||||||||
IXXH40N65C4D1 | IXYS | Description: DISC IGBT XPT-GENX4 TO-247AD | на замовлення 540 шт: термін постачання 21-31 дні (днів) | |||||||||||||||
IXXH50N60B3 | IXYS | Description: IGBT 600V 120A 600W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 27ns/100ns Switching Energy: 670µJ (on), 740µJ (off) Test Condition: 360V, 36A, 5Ohm, 15V Gate Charge: 70 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 600 W | товар відсутній | |||||||||||||||
IXXH50N60B3 | Littelfuse | Trans IGBT Chip N-CH 600V 120A 600000mW 3-Pin(3+Tab) TO-247 | товар відсутній | |||||||||||||||
IXXH50N60B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 70nC Kind of package: tube Turn-on time: 75ns Turn-off time: 320ns кількість в упаковці: 300 шт | товар відсутній | |||||||||||||||
IXXH50N60B3 | IXYS | IGBTs GenX3 600V XPT IGBTs | на замовлення 181 шт: термін постачання 21-30 дні (днів) |
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IXXH50N60B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 70nC Kind of package: tube Turn-on time: 75ns Turn-off time: 320ns | товар відсутній | |||||||||||||||
IXXH50N60B3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 120A 600W 3-Pin(3+Tab) TO-247AD | товар відсутній | |||||||||||||||
IXXH50N60B3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 70nC Kind of package: tube Turn-on time: 75ns Turn-off time: 320ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXH50N60B3D1 | IXYS | IGBTs XPT 600V IGBT GenX3 XPT IGBT | на замовлення 210 шт: термін постачання 21-30 дні (днів) |
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IXXH50N60B3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 70nC Kind of package: tube Turn-on time: 75ns Turn-off time: 320ns | товар відсутній | |||||||||||||||
IXXH50N60B3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 120A 600W 3-Pin(3+Tab) TO-247AD | товар відсутній | |||||||||||||||
IXXH50N60B3D1 | IXYS | Description: IGBT 600V 120A 600W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 27ns/100ns Switching Energy: 670µJ (on), 740µJ (off) Test Condition: 360V, 36A, 5Ohm, 15V Gate Charge: 70 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 600 W | на замовлення 306 шт: термін постачання 21-31 дні (днів) |
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IXXH50N60B3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 120A 600000mW 3-Pin(3+Tab) TO-247AD | товар відсутній | |||||||||||||||
IXXH50N60B3D1 | Ixys Corporation | Trans IGBT Chip N-CH 600V 120A 600W 3-Pin(3+Tab) TO-247AD | на замовлення 750 шт: термін постачання 21-31 дні (днів) |
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IXXH50N60C3 | IXYS | IGBTs XPT IGBT C3-Class 600V/100 Amp | товар відсутній | |||||||||||||||
IXXH50N60C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 64nC Kind of package: tube Turn-on time: 69ns Turn-off time: 170ns | товар відсутній | |||||||||||||||
IXXH50N60C3 | IXYS | Description: IGBT 600V 100A 600W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 24ns/62ns Switching Energy: 720µJ (on), 330µJ (off) Test Condition: 360V, 36A, 5Ohm, 15V Gate Charge: 64 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 600 W | товар відсутній | |||||||||||||||
IXXH50N60C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 64nC Kind of package: tube Turn-on time: 69ns Turn-off time: 170ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXH50N60C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 64nC Kind of package: tube Turn-on time: 69ns Turn-off time: 170ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXH50N60C3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 100A 600000mW 3-Pin(3+Tab) TO-247AD | товар відсутній | |||||||||||||||
IXXH50N60C3D1 | IXYS | IGBTs XPT IGBT C3-Class 600V/100Amp CoPacked | на замовлення 410 шт: термін постачання 21-30 дні (днів) |
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IXXH50N60C3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 100A 600000mW 3-Pin(3+Tab) TO-247AD | товар відсутній | |||||||||||||||
IXXH50N60C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 64nC Kind of package: tube Turn-on time: 69ns Turn-off time: 170ns | товар відсутній | |||||||||||||||
IXXH50N60C3D1 | IXYS | Description: IGBT 600V 100A 600W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 24ns/62ns Switching Energy: 720µJ (on), 330µJ (off) Test Condition: 360V, 36A, 5Ohm, 15V Gate Charge: 64 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 600 W | товар відсутній | |||||||||||||||
IXXH60N60B4 | IXYS | IGBTs GenX3 600V XPT IGBTs | товар відсутній | |||||||||||||||
IXXH60N60B4H1 | IXYS | IGBTs 40 Amps 900V 2.5 Rds | товар відсутній | |||||||||||||||
IXXH60N65B4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 265A Mounting: THT Gate charge: 86nC Kind of package: tube Turn-on time: 94ns Turn-off time: 208ns кількість в упаковці: 1 шт | на замовлення 227 шт: термін постачання 14-21 дні (днів) |
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IXXH60N65B4 | Littelfuse | Trans IGBT Chip N-CH 650V 145A 536000mW 3-Pin(3+Tab) TO-247AD | на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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IXXH60N65B4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 265A Mounting: THT Gate charge: 86nC Kind of package: tube Turn-on time: 94ns Turn-off time: 208ns | на замовлення 227 шт: термін постачання 21-30 дні (днів) |
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IXXH60N65B4 | IXYS | IGBTs 650V/116A TRENCH IGBT GENX4 XPT | товар відсутній | |||||||||||||||
IXXH60N65B4 | IXYS | Description: IGBT 650V 116A 455W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 37ns/145ns Switching Energy: 3.13mJ (on), 1.15mJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 116 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 250 A Power - Max: 455 W | на замовлення 930 шт: термін постачання 21-31 дні (днів) |
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IXXH60N65B4H1 | IXYS | IGBTs 650V/106A TRENCH IGBT GENX4 XPT | на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXXH60N65B4H1 | IXYS | Description: IGBT 650V 116A 380W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 150 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 37ns/145ns Switching Energy: 3.13mJ (on), 1.15mJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 116 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 230 A Power - Max: 380 W | товар відсутній | |||||||||||||||
IXXH60N65B4H1 | Littelfuse | Trans IGBT Chip N-CH 650V 116A 455000mW 3-Pin(3+Tab) TO-247AD | товар відсутній | |||||||||||||||
IXXH60N65B4H1 | Littelfuse | Trans IGBT Chip N-CH 650V 116A 455mW 3-Pin(3+Tab) TO-247AD | товар відсутній | |||||||||||||||
IXXH60N65B4H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 265A Mounting: THT Gate charge: 86nC Kind of package: tube Turn-on time: 94ns Turn-off time: 208ns кількість в упаковці: 1 шт | на замовлення 5 шт: термін постачання 14-21 дні (днів) |
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IXXH60N65B4H1 | Littelfuse | Trans IGBT Chip N-CH 650V 116A 455W 3-Pin(3+Tab) TO-247AD | товар відсутній | |||||||||||||||
IXXH60N65B4H1 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXXH60N65B4H1 - IGBT, 60 A, 2.2 V, 455 W, 650 V, TO-247, 3 Pin(s) Kollektor-Emitter-Spannung, max.: 650 Verlustleistung: 455 Anzahl der Pins: 3 Kontinuierlicher Kollektorstrom: 60 Bauform - Transistor: TO-247 Kollektor-Emitter-Sättigungsspannung: 2.2 Betriebstemperatur, max.: 175 Produktpalette: - SVHC: No SVHC (12-Jan-2017) | товар відсутній | |||||||||||||||
IXXH60N65B4H1 | Littelfuse | Trans IGBT Chip N-CH 650V 116A 455mW 3-Pin(3+Tab) TO-247AD | товар відсутній | |||||||||||||||
IXXH60N65B4H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 265A Mounting: THT Gate charge: 86nC Kind of package: tube Turn-on time: 94ns Turn-off time: 208ns | на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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IXXH60N65C4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 260A Mounting: THT Gate charge: 86nC Kind of package: tube Turn-on time: 110ns Turn-off time: 164ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXH60N65C4 | Littelfuse | Trans IGBT Chip N-CH 650V 118A 455000mW 3-Pin(3+Tab) TO-247AD | товар відсутній | |||||||||||||||
IXXH60N65C4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 260A Mounting: THT Gate charge: 86nC Kind of package: tube Turn-on time: 110ns Turn-off time: 164ns | товар відсутній | |||||||||||||||
IXXH60N65C4 | IXYS | IGBTs 650V/118A TRENCH IGBT GENX4 XPT | товар відсутній | |||||||||||||||
IXXH60N65C4 | IXYS | Description: IGBT 650V 118A 455W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 60A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 37ns/133ns Switching Energy: 3.2mJ (on), 830µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 94 nC Current - Collector (Ic) (Max): 118 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 455 W | товар відсутній | |||||||||||||||
IXXH75N60B3 | IXYS | IGBTs TO247 600V 75A GENX3 | товар відсутній | |||||||||||||||
IXXH75N60B3 | IXYS | Description: DISC IGBT XPT-GENX3 TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 35ns/118ns Switching Energy: 1.7mJ (on), 1.5mJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 107 nC Part Status: Active Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 750 W | товар відсутній | |||||||||||||||
IXXH75N60B3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 160A 750W 3-Pin(3+Tab) TO-247AD | товар відсутній | |||||||||||||||
IXXH75N60B3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 750W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 107nC Kind of package: tube Turn-on time: 108ns Turn-off time: 315ns | товар відсутній | |||||||||||||||
IXXH75N60B3D1 | IXYS | IGBTs XPT 600V IGBT GenX3 XPT IGBTs | на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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IXXH75N60B3D1 | IXYS | Description: IGBT 600V 160A 750W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 35ns/118ns Switching Energy: 1.7mJ (on), 1.5mJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 107 nC Part Status: Active Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 750 W | на замовлення 280 шт: термін постачання 21-31 дні (днів) |
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IXXH75N60B3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 750W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 107nC Kind of package: tube Turn-on time: 108ns Turn-off time: 315ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXH75N60B3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 160A 750000mW 3-Pin(3+Tab) TO-247AD | товар відсутній | |||||||||||||||
IXXH75N60C3 | IXYS | IGBTs XPT 600V IGBT GenX3 Power Device | товар відсутній | |||||||||||||||
IXXH75N60C3 | IXYS | Description: IGBT 600V 150A 750W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 35ns/90ns Switching Energy: 1.6mJ (on), 800µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 107 nC Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 750 W | товар відсутній | |||||||||||||||
IXXH75N60C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 750W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 107nC Kind of package: tube Turn-on time: 105ns Turn-off time: 165ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXH75N60C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 750W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 107nC Kind of package: tube Turn-on time: 105ns Turn-off time: 165ns | товар відсутній | |||||||||||||||
IXXH75N60C3D1 | IXYS | Description: IGBT 600V 150A 750W TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 35ns/90ns Switching Energy: 1.6mJ (on), 800µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 107 nC Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 750 W | на замовлення 26 шт: термін постачання 21-31 дні (днів) |
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IXXH75N60C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 750W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 107nC Kind of package: tube Turn-on time: 105ns Turn-off time: 185ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXH75N60C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 750W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 107nC Kind of package: tube Turn-on time: 105ns Turn-off time: 185ns | товар відсутній | |||||||||||||||
IXXH75N60C3D1 | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | товар відсутній | |||||||||||||||
IXXH75N60C3D1 | IXYS | IGBTs TO247 600V 75A XPT | товар відсутній | |||||||||||||||
IXXH80N65B4 | Littelfuse | Trans IGBT Chip N-CH 650V 160A 625mW 3-Pin(3+Tab) TO-247AD | товар відсутній | |||||||||||||||
IXXH80N65B4 | LITTELFUSE | Description: LITTELFUSE - IXXH80N65B4 - TRANSISTOR, IGBT, 650V, 160A, TO-247AD Kollektor-Emitter-Spannung, max.: 650 Verlustleistung: 625 Anzahl der Pins: 3 Kontinuierlicher Kollektorstrom: 160 Bauform - Transistor: TO-247AD Kollektor-Emitter-Sättigungsspannung: 1.65 Betriebstemperatur, max.: 175 Produktpalette: XPT GenX4 Series SVHC: To Be Advised | товар відсутній | |||||||||||||||
IXXH80N65B4 | Littelfuse | Trans IGBT Chip N-CH 650V 160A 625000mW 3-Pin(3+Tab) TO-247AD | товар відсутній | |||||||||||||||
IXXH80N65B4 | IXYS | IGBTs 650V/160A TRENCH IGBT GENX4 XPT | на замовлення 997 шт: термін постачання 21-30 дні (днів) |
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IXXH80N65B4 | IXYS | Description: IGBT 650V 160A 625W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 38ns/120ns Switching Energy: 3.77mJ (on), 1.2mJ (off) Test Condition: 400V, 80A, 3Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 430 A Power - Max: 625 W | на замовлення 5546 шт: термін постачання 21-31 дні (днів) |
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IXXH80N65B4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 625W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 430A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 125ns Turn-off time: 222ns кількість в упаковці: 1 шт | на замовлення 28 шт: термін постачання 14-21 дні (днів) |
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IXXH80N65B4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 625W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 430A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 125ns Turn-off time: 222ns | на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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IXXH80N65B4D1 | IXYS | IGBTs Disc IGBT XPT-GenX4 TO-247AD | товар відсутній | |||||||||||||||
IXXH80N65B4D1 | IXYS | Description: IGBT PT 650V 180A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 80A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 26ns/112ns Switching Energy: 3.36mJ (on), 1.83mJ (off) Test Condition: 400V, 80A, 3Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 180 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 430 A Power - Max: 625 W | на замовлення 955 шт: термін постачання 21-31 дні (днів) |
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IXXH80N65B4D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 625W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 430A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 125ns Turn-off time: 222ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXH80N65B4D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 625W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 430A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 125ns Turn-off time: 222ns | товар відсутній | |||||||||||||||
IXXH80N65B4D1 | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | товар відсутній | |||||||||||||||
IXXH80N65B4H1 | Littelfuse | Trans IGBT Chip N-CH 650V 160A 625W 3-Pin(3+Tab) TO-247AD | товар відсутній | |||||||||||||||
IXXH80N65B4H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 625W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 430A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 123ns Turn-off time: 147ns | товар відсутній | |||||||||||||||
IXXH80N65B4H1 | Littelfuse | Trans IGBT Chip N-CH 650V 160A 625000mW 3-Pin(3+Tab) TO-247AD | товар відсутній | |||||||||||||||
IXXH80N65B4H1 | Littelfuse | Trans IGBT Chip N-CH 650V 160A 625W 3-Pin(3+Tab) TO-247AD | товар відсутній | |||||||||||||||
IXXH80N65B4H1 | IXYS | IGBTs 650V/160A TRENCH IGBT GENX4 XPT | на замовлення 300 шт: термін постачання 343-352 дні (днів) |
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IXXH80N65B4H1 | IXYS | Description: IGBT PT 650V 160A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 150 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 38ns/120ns Switching Energy: 3.77mJ (on), 1.2mJ (off) Test Condition: 400V, 80A, 3Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 430 A Power - Max: 625 W | на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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IXXH80N65B4H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 625W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 430A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 123ns Turn-off time: 147ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXH80N65B4H1 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXXH80N65B4H1 - IGBT, 160 A, 1.65 V, 625 W, 650 V, TO-247AD, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V usEccn: EAR99 euEccn: NLR Verlustleistung: 625W Bauform - Transistor: TO-247AD Anzahl der Pins: 3Pin(s) Produktpalette: XPT GenX4 Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 160A SVHC: No SVHC (12-Jan-2017) | на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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IXXK100N60B3H1 | IXYS | IGBT Transistors XPT IGBT B3-Class 600V/190Amp CoPacked | товар відсутній | |||||||||||||||
IXXK100N60B3H1 | IXYS | Description: IGBT PT 600V 200A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A Supplier Device Package: TO-264 (IXXK) IGBT Type: PT Td (on/off) @ 25°C: 30ns/120ns Switching Energy: 1.9mJ (on), 2mJ (off) Test Condition: 360V, 70A, 2Ohm, 15V Gate Charge: 143 nC Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 440 A Power - Max: 695 W | на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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IXXK100N60B3H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; TO264 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 100A Power dissipation: 695W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 370A Mounting: THT Gate charge: 143nC Kind of package: tube Turn-on time: 92ns Turn-off time: 350ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXK100N60B3H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; TO264 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 100A Power dissipation: 695W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 370A Mounting: THT Gate charge: 143nC Kind of package: tube Turn-on time: 92ns Turn-off time: 350ns | товар відсутній | |||||||||||||||
IXXK100N60B3H1 | Littelfuse | Trans IGBT Chip N-CH 600V 200A 695000mW 3-Pin TO-264 | товар відсутній | |||||||||||||||
IXXK100N60C3H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; TO264 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 100A Power dissipation: 695W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 340A Mounting: THT Gate charge: 150nC Kind of package: tube Turn-on time: 95ns Turn-off time: 0.22µs | товар відсутній | |||||||||||||||
IXXK100N60C3H1 | Littelfuse | Trans IGBT Chip N-CH 600V 170A 695000mW 3-Pin(3+Tab) TO-264 | товар відсутній | |||||||||||||||
IXXK100N60C3H1 | IXYS | IGBTs XPT IGBT C3-Class 600V/170Amp CoPacked | на замовлення 194 шт: термін постачання 21-30 дні (днів) |
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IXXK100N60C3H1 | IXYS | Description: IGBT PT 600V 170A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A Supplier Device Package: TO-264 (IXXK) IGBT Type: PT Td (on/off) @ 25°C: 30ns/90ns Switching Energy: 2mJ (on), 950µJ (off) Test Condition: 360V, 70A, 2Ohm, 15V Gate Charge: 150 nC Part Status: Active Current - Collector (Ic) (Max): 170 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 340 A Power - Max: 695 W | на замовлення 270 шт: термін постачання 21-31 дні (днів) |
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IXXK100N60C3H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; TO264 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 100A Power dissipation: 695W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 340A Mounting: THT Gate charge: 150nC Kind of package: tube Turn-on time: 95ns Turn-off time: 0.22µs кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXK100N75B4H1 | IXYS | IGBT Transistors Disc IGBT XPT-GenX4 TO-264(3) | товар відсутній | |||||||||||||||
IXXK110N65B4H1 | IXYS | IGBTs 650V/240A TRENCH IGBT GENX4 XPT | на замовлення 505 шт: термін постачання 21-30 дні (днів) |
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IXXK110N65B4H1 | IXYS | Description: IGBT 650V 240A 880W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A Supplier Device Package: TO-264 (IXXK) IGBT Type: PT Td (on/off) @ 25°C: 38ns/156ns Switching Energy: 2.2mJ (on), 1.05mJ (off) Test Condition: 400V, 55A, 2Ohm, 15V Gate Charge: 183 nC Part Status: Active Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 630 A Power - Max: 880 W | на замовлення 288 шт: термін постачання 21-31 дні (днів) |
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IXXK110N65B4H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 110A Power dissipation: 880W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 570A Mounting: THT Gate charge: 183nC Kind of package: tube Turn-on time: 65ns Turn-off time: 250ns кількість в упаковці: 1 шт | на замовлення 300 шт: термін постачання 14-21 дні (днів) |
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IXXK110N65B4H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 110A Power dissipation: 880W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 570A Mounting: THT Gate charge: 183nC Kind of package: tube Turn-on time: 65ns Turn-off time: 250ns | на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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IXXK110N65B4H1 | Littelfuse | Trans IGBT Chip N-CH 650V 250A 880000mW 3-Pin(3+Tab) TO-264AA | товар відсутній | |||||||||||||||
IXXK160N65B4 | IXYS | Description: IGBT 650V 310A 940W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A Supplier Device Package: TO-264 (IXXK) IGBT Type: PT Td (on/off) @ 25°C: 52ns/220ns Switching Energy: 3.3mJ (on), 1.88mJ (off) Test Condition: 400V, 80A, 1Ohm, 15V Gate Charge: 425 nC Part Status: Active Current - Collector (Ic) (Max): 310 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 860 A Power - Max: 940 W | на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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IXXK160N65B4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 940W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 860A Mounting: THT Gate charge: 425nC Kind of package: tube Turn-on time: 93ns Turn-off time: 380ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXK160N65B4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 940W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 860A Mounting: THT Gate charge: 425nC Kind of package: tube Turn-on time: 93ns Turn-off time: 380ns | товар відсутній | |||||||||||||||
IXXK160N65B4 | Littelfuse | Trans IGBT Chip N-CH 650V 310A 940W 3-Pin(3+Tab) TO-264AA | товар відсутній | |||||||||||||||
IXXK160N65B4 | IXYS | IGBTs 650V/310A TRENCH IGBT GENX4 XPT | товар відсутній | |||||||||||||||
IXXK160N65C4 | IXYS | IGBTs 650V/290A Trench IGBT GenX4 XPT | товар відсутній | |||||||||||||||
IXXK160N65C4 | IXYS | Description: IGBT 650V 290A 940W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A Supplier Device Package: TO-264 (IXXK) IGBT Type: PT Td (on/off) @ 25°C: 52ns/197ns Switching Energy: 3.5mJ (on), 1.3mJ (off) Test Condition: 400V, 80A, 1Ohm, 15V Gate Charge: 422 nC Current - Collector (Ic) (Max): 290 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 800 A Power - Max: 940 W | товар відсутній | |||||||||||||||
IXXK160N65C4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264 Type of transistor: IGBT Technology: GenX4™; XPT™ Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 940W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 320A Mounting: THT Gate charge: 422nC Kind of package: tube Turn-on time: 52ns Turn-off time: 197ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXK160N65C4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264 Type of transistor: IGBT Technology: GenX4™; XPT™ Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 940W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 320A Mounting: THT Gate charge: 422nC Kind of package: tube Turn-on time: 52ns Turn-off time: 197ns | товар відсутній | |||||||||||||||
IXXK200N60B3 | IXYS | Description: IGBT 600V 380A 1630W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A Supplier Device Package: TO-264 (IXXK) IGBT Type: PT Td (on/off) @ 25°C: 48ns/160ns Switching Energy: 2.85mJ (on), 2.9mJ (off) Test Condition: 360V, 100A, 1Ohm, 15V Gate Charge: 315 nC Part Status: Active Current - Collector (Ic) (Max): 380 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 900 A Power - Max: 1630 W | товар відсутній | |||||||||||||||
IXXK200N60B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264 Mounting: THT Kind of package: tube Technology: GenX3™; Planar; XPT™ Case: TO264 Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 900A Turn-on time: 140ns Turn-off time: 395ns Type of transistor: IGBT Power dissipation: 1.63kW Gate charge: 315nC кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXK200N60B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264 Mounting: THT Kind of package: tube Technology: GenX3™; Planar; XPT™ Case: TO264 Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 900A Turn-on time: 140ns Turn-off time: 395ns Type of transistor: IGBT Power dissipation: 1.63kW Gate charge: 315nC | товар відсутній | |||||||||||||||
IXXK200N60B3 | IXYS | IGBT Transistors GenX3 XPT 600V | товар відсутній | |||||||||||||||
IXXK200N60B3 | Littelfuse | Trans IGBT Chip N-CH 600V 380A 1630000mW 3-Pin(3+Tab) TO-264 | товар відсутній | |||||||||||||||
IXXK200N60C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264 Mounting: THT Kind of package: tube Technology: GenX3™; Planar; XPT™ Case: TO264 Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 900A Turn-on time: 143ns Turn-off time: 240ns Type of transistor: IGBT Power dissipation: 1.63kW Gate charge: 315nC | товар відсутній | |||||||||||||||
IXXK200N60C3 | IXYS | IGBT Transistors XPT 600V IGBT GenX3 | товар відсутній | |||||||||||||||
IXXK200N60C3 | Littelfuse | Trans IGBT Chip N-CH 600V 340A 1630000mW 3-Pin(3+Tab) TO-264 | товар відсутній | |||||||||||||||
IXXK200N60C3 | IXYS | Description: IGBT 600V 340A 1630W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Supplier Device Package: TO-264 (IXXK) IGBT Type: PT Td (on/off) @ 25°C: 47ns/125ns Switching Energy: 3mJ (on), 1.7mJ (off) Test Condition: 360V, 100A, 1Ohm, 15V Gate Charge: 315 nC Part Status: Active Current - Collector (Ic) (Max): 340 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 900 A Power - Max: 1630 W | товар відсутній | |||||||||||||||
IXXK200N60C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264 Mounting: THT Kind of package: tube Technology: GenX3™; Planar; XPT™ Case: TO264 Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 900A Turn-on time: 143ns Turn-off time: 240ns Type of transistor: IGBT Power dissipation: 1.63kW Gate charge: 315nC кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXK200N65B4 | IXYS | IGBTs 650V/370A TRENCH IGBT GENX4 XPT | на замовлення 204 шт: термін постачання 21-30 дні (днів) |
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IXXK200N65B4 | Littelfuse | Trans IGBT Chip N-CH 650V 370A 1150000mW 3-Pin(3+Tab) TO-264 | товар відсутній | |||||||||||||||
IXXK200N65B4 | IXYS | Description: IGBT 650V 370A 1150W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A Supplier Device Package: TO-264 (IXXK) IGBT Type: PT Td (on/off) @ 25°C: 62ns/245ns Switching Energy: 4.4mJ (on), 2.2mJ (off) Test Condition: 400V, 100A, 1Ohm, 15V Gate Charge: 553 nC Part Status: Active Current - Collector (Ic) (Max): 370 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 1000 A Power - Max: 1150 W | товар відсутній | |||||||||||||||
IXXK200N65B4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; TO264 Mounting: THT Kind of package: tube Technology: GenX4™; Trench; XPT™ Case: TO264 Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 1kA Turn-on time: 135ns Turn-off time: 370ns Type of transistor: IGBT Power dissipation: 1.63kW Gate charge: 517nC кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXK200N65B4 | Littelfuse | Trans IGBT Chip N-CH 650V 370A 1150000mW 3-Pin(3+Tab) TO-264 | товар відсутній | |||||||||||||||
IXXK200N65B4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; TO264 Mounting: THT Kind of package: tube Technology: GenX4™; Trench; XPT™ Case: TO264 Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 1kA Turn-on time: 135ns Turn-off time: 370ns Type of transistor: IGBT Power dissipation: 1.63kW Gate charge: 517nC | товар відсутній | |||||||||||||||
IXXK300N60B3 | IXYS | Description: IGBT 600V 550A 2300W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A Supplier Device Package: TO-264 (IXXK) IGBT Type: PT Td (on/off) @ 25°C: 50ns/190ns Switching Energy: 3.45mJ (on), 2.86mJ (off) Test Condition: 400V, 100A, 1Ohm, 15V Gate Charge: 460 nC Current - Collector (Ic) (Max): 550 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 1140 A Power - Max: 2300 W | на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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IXXK300N60B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264 Mounting: THT Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 1.14kA Turn-on time: 137ns Turn-off time: 430ns Type of transistor: IGBT Power dissipation: 2.3kW Kind of package: tube Gate charge: 460nC Technology: GenX3™; Planar; XPT™ Case: TO264 кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXK300N60B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264 Mounting: THT Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 1.14kA Turn-on time: 137ns Turn-off time: 430ns Type of transistor: IGBT Power dissipation: 2.3kW Kind of package: tube Gate charge: 460nC Technology: GenX3™; Planar; XPT™ Case: TO264 | товар відсутній | |||||||||||||||
IXXK300N60B3 | IXYS | IGBTs XPT 600V IGBT 300A | на замовлення 290 шт: термін постачання 21-30 дні (днів) |
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IXXK300N60B3 | Littelfuse | Trans IGBT Chip N-CH 600V 550A 2300000mW 3-Pin(3+Tab) TO-264AA | товар відсутній | |||||||||||||||
IXXK300N60C3 | IXYS | IGBT Transistors XPT 600V IGBT 300A | товар відсутній | |||||||||||||||
IXXK300N60C3 | Littelfuse | Trans IGBT Chip N-CH 600V 510A 2300000mW 3-Pin(3+Tab) TO-264AA | товар відсутній | |||||||||||||||
IXXK300N60C3 | IXYS | Description: IGBT 600V 510A 2300W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A Supplier Device Package: TO-264 (IXXK) IGBT Type: PT Td (on/off) @ 25°C: 50ns/160ns Switching Energy: 3.35mJ (on), 1.9mJ (off) Test Condition: 400V, 100A, 1Ohm, 15V Gate Charge: 438 nC Current - Collector (Ic) (Max): 510 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 1075 A Power - Max: 2300 W | товар відсутній | |||||||||||||||
IXXK300N60C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264 Mounting: THT Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 1075A Turn-on time: 128ns Turn-off time: 278ns Type of transistor: IGBT Power dissipation: 2.3kW Kind of package: tube Gate charge: 438nC Technology: GenX3™; Planar; XPT™ Case: TO264 кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXK300N60C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264 Mounting: THT Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 1075A Turn-on time: 128ns Turn-off time: 278ns Type of transistor: IGBT Power dissipation: 2.3kW Kind of package: tube Gate charge: 438nC Technology: GenX3™; Planar; XPT™ Case: TO264 | товар відсутній | |||||||||||||||
IXXN100N60B3H1 | Littelfuse | Trans IGBT Module N-CH 600V | товар відсутній | |||||||||||||||
IXXN100N60B3H1 | IXYS | Description: IGBT MOD 600V 170A 500W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 170 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 500 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 4.86 nF @ 25 V | товар відсутній | |||||||||||||||
IXXN100N60B3H1 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 500W Technology: GenX3™; XPT™ Collector current: 98A Power dissipation: 500W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 440A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXN100N60B3H1 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 500W Technology: GenX3™; XPT™ Collector current: 98A Power dissipation: 500W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 440A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT | товар відсутній | |||||||||||||||
IXXN100N60B3H1 | IXYS | IGBT Transistors XPT 600V IGBT GenX3 w/Diode | на замовлення 58 шт: термін постачання 21-30 дні (днів) |
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IXXN100N60B3H1 | Littelfuse | Trans IGBT Module N-CH 600V | товар відсутній | |||||||||||||||
IXXN110N65B4H1 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B Technology: GenX4™; XPT™ Collector current: 110A Power dissipation: 750W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 650A Semiconductor structure: single transistor Max. off-state voltage: 650V Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT | товар відсутній | |||||||||||||||
IXXN110N65B4H1 | IXYS | IGBT Modules 650V/240A TRENCH IGBT GENX4 XPT | на замовлення 470 шт: термін постачання 343-352 дні (днів) |
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IXXN110N65B4H1 | Littelfuse | Trans IGBT Chip N-CH 650V 200A 750000mW 4-Pin SOT-227B | товар відсутній | |||||||||||||||
IXXN110N65B4H1 | IXYS | Description: IGBT MOD 650V 215A 750W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 215 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 750 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 3.65 nF @ 25 V | товар відсутній | |||||||||||||||
IXXN110N65B4H1 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B Technology: GenX4™; XPT™ Collector current: 110A Power dissipation: 750W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 650A Semiconductor structure: single transistor Max. off-state voltage: 650V Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXN110N65C4H1 | IXYS | IGBT Modules 650V/234A Trench IGBT GenX4 XPT | на замовлення 300 шт: термін постачання 343-352 дні (днів) |
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IXXN110N65C4H1 | Littelfuse | Trans IGBT Chip N-CH 650V 200A 750000mW 4-Pin SOT-227B | товар відсутній | |||||||||||||||
IXXN110N65C4H1 | IXYS | Description: IGBT MOD 650V 210A 750W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 210 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 750 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 3.69 nF @ 25 V | товар відсутній | |||||||||||||||
IXXN110N65C4H1 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B Technology: GenX3™; XPT™ Collector current: 110A Power dissipation: 750W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 470A Semiconductor structure: single transistor Max. off-state voltage: 650V Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXN110N65C4H1 | LITTELFUSE | Description: LITTELFUSE - IXXN110N65C4H1 - TRANSISTOR, IGBT, 650V, 210A, SOT-227B tariffCode: 85412900 Transistormontage: Panel rohsCompliant: YES IGBT-Technologie: - hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.06V Dauer-Kollektorstrom: 210A usEccn: EAR99 IGBT-Anschluss: Tab Kollektor-Emitter-Sättigungsspannung Vce(on): 2.06V Verlustleistung Pd: 750W euEccn: NLR Verlustleistung: 750W Bauform - Transistor: SOT-227B Kollektor-Emitter-Spannung V(br)ceo: 650V Produktpalette: XPT GenX4 Series Kollektor-Emitter-Spannung, max.: 650V IGBT-Konfiguration: Single productTraceability: Yes-Date/Lot Code DC-Kollektorstrom: 210A Betriebstemperatur, max.: 175°C directShipCharge: 25 SVHC: To Be Advised | на замовлення 18 шт: термін постачання 21-31 дні (днів) |
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IXXN110N65C4H1 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B Technology: GenX3™; XPT™ Collector current: 110A Power dissipation: 750W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 470A Semiconductor structure: single transistor Max. off-state voltage: 650V Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT | товар відсутній | |||||||||||||||
IXXN200N60B3 | IXYS | Description: IGBT MOD 600V 280A 940W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 280 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 940 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 9.97 nF @ 25 V | на замовлення 296 шт: термін постачання 21-31 дні (днів) |
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IXXN200N60B3 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 160A; SOT227B Case: SOT227B Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 160A Pulsed collector current: 1kA Power dissipation: 940W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: GenX3™; XPT™ кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXN200N60B3 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 160A; SOT227B Case: SOT227B Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 160A Pulsed collector current: 1kA Power dissipation: 940W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: GenX3™; XPT™ | товар відсутній | |||||||||||||||
IXXN200N60B3 | IXYS | IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT | товар відсутній | |||||||||||||||
IXXN200N60B3H1 | IXYS | IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT | товар відсутній | |||||||||||||||
IXXN200N60B3H1 | IXYS | Description: IGBT MOD 600V 200A 780W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 780 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 9.97 nF @ 25 V | товар відсутній | |||||||||||||||
IXXN200N60B3H1 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W Case: SOT227B Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 98A Pulsed collector current: 1kA Power dissipation: 780W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: GenX3™; XPT™ кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXN200N60B3H1 | Littelfuse | IGBT Module, XPT 600V IGBT GenX3 w/Diode | товар відсутній | |||||||||||||||
IXXN200N60B3H1 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W Case: SOT227B Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 98A Pulsed collector current: 1kA Power dissipation: 780W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: GenX3™; XPT™ | товар відсутній | |||||||||||||||
IXXN200N60C3H1 | IXYS | Description: IGBT MOD 600V 200A 780W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 780 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 9.9 nF @ 25 V | на замовлення 160 шт: термін постачання 21-31 дні (днів) |
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IXXN200N60C3H1 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W Case: SOT227B Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 98A Pulsed collector current: 1kA Power dissipation: 780W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: GenX3™; XPT™ кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXN200N60C3H1 | Littelfuse | Trans IGBT Module N-CH 600V 200A 780000mW | товар відсутній | |||||||||||||||
IXXN200N60C3H1 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W Case: SOT227B Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 98A Pulsed collector current: 1kA Power dissipation: 780W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: GenX3™; XPT™ | товар відсутній | |||||||||||||||
IXXN200N60C3H1 | IXYS | IGBT Modules XPT 600V IGBT 98A | товар відсутній | |||||||||||||||
IXXN200N65A4 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 200A; SOT227B Case: SOT227B Max. off-state voltage: 650V Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 1.2kA Power dissipation: 1.25kW Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: GenX4™; XPT™ | товар відсутній | |||||||||||||||
IXXN200N65A4 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 200A; SOT227B Case: SOT227B Max. off-state voltage: 650V Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 1.2kA Power dissipation: 1.25kW Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: GenX4™; XPT™ кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXN340N65B4 | IXYS | IGBT Transistors IGBT XPT | товар відсутній | |||||||||||||||
IXXN340N65B4 | Littelfuse | IGBT Module, 650V IGBT Transistor | товар відсутній | |||||||||||||||
IXXP12N65B4 | Littelfuse | IGBTs Disc IGBT XPT-GenX4 TO-220AB/FP | товар відсутній | |||||||||||||||
IXXP12N65B4D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 12A Power dissipation: 160W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 70A Mounting: THT Gate charge: 34nC Kind of package: tube Turn-on time: 44ns Turn-off time: 245ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXP12N65B4D1 | Littelfuse | 650V IGBT Transistor | товар відсутній | |||||||||||||||
IXXP12N65B4D1 | IXYS | IGBTs Disc IGBT XPT-GenX4 TO-220AB/FP | товар відсутній | |||||||||||||||
IXXP12N65B4D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 12A Power dissipation: 160W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 70A Mounting: THT Gate charge: 34nC Kind of package: tube Turn-on time: 44ns Turn-off time: 245ns | товар відсутній | |||||||||||||||
IXXP12N65B4D1 | IXYS | Description: IGBT 650V 38A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 43 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 13ns/158ns Switching Energy: 440µJ (on), 220µJ (off) Test Condition: 400V, 12A, 20Ohm, 15V Gate Charge: 34 nC Part Status: Active Current - Collector (Ic) (Max): 38 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 70 A Power - Max: 160 W | товар відсутній | |||||||||||||||
IXXP50N60B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO220-3 Type of transistor: IGBT Technology: GenX3™; XPT™ Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 600W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 70nC Kind of package: tube Turn-on time: 75ns Turn-off time: 320ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXP50N60B3 | IXYS | IGBTs TO220 600V 50A IGBT | товар відсутній | |||||||||||||||
IXXP50N60B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO220-3 Type of transistor: IGBT Technology: GenX3™; XPT™ Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 600W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 70nC Kind of package: tube Turn-on time: 75ns Turn-off time: 320ns | товар відсутній | |||||||||||||||
IXXP50N60B3 | IXYS | Description: IGBT Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 27ns/150ns Switching Energy: 670µJ (on), 1.2mJ (off) Test Condition: 360V, 36A, 5Ohm, 15V Gate Charge: 70 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 600 W | товар відсутній | |||||||||||||||
IXXQ30N60B3M | IXYS | Description: IGBT Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 36 ns Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A Supplier Device Package: TO-3P Td (on/off) @ 25°C: 23ns/150ns Switching Energy: 550µJ (on), 800µJ (off) Test Condition: 400V, 24A, 10Ohm, 15V Gate Charge: 39 nC Part Status: Active Current - Collector (Ic) (Max): 33 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 140 A Power - Max: 90 W | на замовлення 960 шт: термін постачання 21-31 дні (днів) |
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IXXQ30N60B3M | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 19A Power dissipation: 90W Case: TO3PF Gate-emitter voltage: ±20V Pulsed collector current: 140A Mounting: THT Gate charge: 39nC Kind of package: tube Turn-on time: 57ns Turn-off time: 292ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXQ30N60B3M | IXYS | IGBTs TO3P 600V 19A IGBT | товар відсутній | |||||||||||||||
IXXQ30N60B3M | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 19A Power dissipation: 90W Case: TO3PF Gate-emitter voltage: ±20V Pulsed collector current: 140A Mounting: THT Gate charge: 39nC Kind of package: tube Turn-on time: 57ns Turn-off time: 292ns | товар відсутній | |||||||||||||||
IXXR100N60B3H1 | Littelfuse | Trans IGBT Chip N-CH 600V 145A 400000mW 3-Pin(3+Tab) ISOPLUS 247 | товар відсутній | |||||||||||||||
IXXR100N60B3H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 400W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 100A Power dissipation: 400W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 440A Mounting: THT Gate charge: 143nC Kind of package: tube Turn-on time: 92ns Turn-off time: 350ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXR100N60B3H1 | IXYS | IGBTs XPT 600V IGBT GenX3 XPT IGBT | товар відсутній | |||||||||||||||
IXXR100N60B3H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 400W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 100A Power dissipation: 400W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 440A Mounting: THT Gate charge: 143nC Kind of package: tube Turn-on time: 92ns Turn-off time: 350ns | товар відсутній | |||||||||||||||
IXXR100N60B3H1 | IXYS | Description: IGBT 600V 145A 400W ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A Supplier Device Package: ISOPLUS247™ IGBT Type: PT Td (on/off) @ 25°C: 30ns/120ns Switching Energy: 1.9mJ (on), 2mJ (off) Test Condition: 360V, 70A, 2Ohm, 15V Gate Charge: 143 nC Current - Collector (Ic) (Max): 145 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 440 A Power - Max: 400 W | товар відсутній | |||||||||||||||
IXXR110N65B4H1 | IXYS | IGBTs 650V/150A TRENCH IGBT GENX4 XPT | на замовлення 518 шт: термін постачання 21-30 дні (днів) |
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IXXR110N65B4H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™ Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 70A Power dissipation: 455W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 490A Mounting: THT Gate charge: 183nC Kind of package: tube Turn-on time: 65ns Turn-off time: 250ns | товар відсутній | |||||||||||||||
IXXR110N65B4H1 | IXYS | Description: IGBT 650V 150A 455W ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 110A Supplier Device Package: ISOPLUS247™ IGBT Type: PT Td (on/off) @ 25°C: 38ns/156ns Switching Energy: 2.2mJ (on), 1.05mJ (off) Test Condition: 400V, 55A, 2Ohm, 15V Gate Charge: 183 nC Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 460 A Power - Max: 455 W | на замовлення 28 шт: термін постачання 21-31 дні (днів) |
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IXXR110N65B4H1 | Littelfuse | Trans IGBT Chip N-CH 650V 150A 455000mW 3-Pin(3+Tab) ISOPLUS 247 | товар відсутній | |||||||||||||||
IXXR110N65B4H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™ Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 70A Power dissipation: 455W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 490A Mounting: THT Gate charge: 183nC Kind of package: tube Turn-on time: 65ns Turn-off time: 250ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXT100N75B4HV | IXYS | IGBTs IGBT DISCRETE TO-268HV | товар відсутній | |||||||||||||||
IXXT100N75B4HV | IXYS | Description: IGBT DISCRETE TO-268HV Packaging: Tube | товар відсутній | |||||||||||||||
IXXX100N60B3H1 | IXYS | IGBT Transistors IGBT XPT-GENX3 | товар відсутній | |||||||||||||||
IXXX100N60B3H1 | IXYS | Description: IGBT 600V 200A 695W TO247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 30ns/120ns Switching Energy: 1.9mJ (on), 2mJ (off) Test Condition: 360V, 70A, 2Ohm, 15V Gate Charge: 143 nC Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 440 A Power - Max: 695 W | товар відсутній | |||||||||||||||
IXXX100N60B3H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™ Case: PLUS247™ Mounting: THT Technology: GenX3™; Planar; XPT™ Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 370A Turn-on time: 92ns Turn-off time: 350ns Type of transistor: IGBT Power dissipation: 695W Kind of package: tube Gate charge: 143nC Collector-emitter voltage: 600V кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXX100N60B3H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™ Case: PLUS247™ Mounting: THT Technology: GenX3™; Planar; XPT™ Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 370A Turn-on time: 92ns Turn-off time: 350ns Type of transistor: IGBT Power dissipation: 695W Kind of package: tube Gate charge: 143nC Collector-emitter voltage: 600V | товар відсутній | |||||||||||||||
IXXX100N60C3H1 | IXYS | Description: IGBT 600V 170A 695W PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 30ns/90ns Switching Energy: 2mJ (on), 950µJ (off) Test Condition: 360V, 70A, 2Ohm, 15V Gate Charge: 150 nC Current - Collector (Ic) (Max): 170 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 340 A Power - Max: 695 W | товар відсутній | |||||||||||||||
IXXX100N60C3H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™ Case: PLUS247™ Mounting: THT Technology: GenX3™; Planar; XPT™ Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 340A Turn-on time: 95ns Turn-off time: 0.22µs Type of transistor: IGBT Power dissipation: 695W Kind of package: tube Gate charge: 150nC Collector-emitter voltage: 600V кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXX100N60C3H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™ Case: PLUS247™ Mounting: THT Technology: GenX3™; Planar; XPT™ Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 340A Turn-on time: 95ns Turn-off time: 0.22µs Type of transistor: IGBT Power dissipation: 695W Kind of package: tube Gate charge: 150nC Collector-emitter voltage: 600V | товар відсутній | |||||||||||||||
IXXX100N60C3H1 | Littelfuse | Trans IGBT Chip N-CH 600V 170A 695000mW 3-Pin(3+Tab) PLUS 247 | товар відсутній | |||||||||||||||
IXXX100N60C3H1 | IXYS | IGBT Transistors GenX3 w/Diode XPT 600V | товар відсутній | |||||||||||||||
IXXX100N75B4H1 | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | товар відсутній | |||||||||||||||
IXXX110N65B4H1 | IXYS | IGBTs 650V/240A TRENCH IGBT GENX4 XPT | на замовлення 208 шт: термін постачання 21-30 дні (днів) |
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IXXX110N65B4H1 | Littelfuse | Trans IGBT Chip N-CH 650V 250A 880000mW 3-Pin(3+Tab) PLUS 247 | товар відсутній | |||||||||||||||
IXXX110N65B4H1 | IXYS | Description: IGBT 650V 240A 880W PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 38ns/156ns Switching Energy: 2.2mJ (on), 1.05mJ (off) Test Condition: 400V, 55A, 2Ohm, 15V Gate Charge: 183 nC Part Status: Active Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 630 A Power - Max: 880 W | товар відсутній | |||||||||||||||
IXXX110N65B4H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™ Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 110A Power dissipation: 880W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 570A Mounting: THT Gate charge: 183nC Kind of package: tube Turn-on time: 65ns Turn-off time: 250ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXX110N65B4H1 | Littelfuse | Trans IGBT Chip N-CH 650V 250A 880000mW 3-Pin(3+Tab) PLUS 247 | товар відсутній | |||||||||||||||
IXXX110N65B4H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™ Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 110A Power dissipation: 880W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 570A Mounting: THT Gate charge: 183nC Kind of package: tube Turn-on time: 65ns Turn-off time: 250ns | товар відсутній | |||||||||||||||
IXXX140N65B4H1 | IXYS | Description: IGBT Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A Supplier Device Package: PLUS247™-3 Td (on/off) @ 25°C: 54ns/270ns Switching Energy: 5.75mJ (on), 2.67mJ (off) Test Condition: 400V, 100A, 4.7Ohm, 15V Gate Charge: 250 nC Current - Collector (Ic) (Max): 340 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 840 A Power - Max: 1200 W | товар відсутній | |||||||||||||||
IXXX140N65B4H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; PLUS247™ Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 140A Power dissipation: 1.2kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 840A Mounting: THT Gate charge: 250nC Kind of package: tube Turn-on time: 128ns Turn-off time: 340ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXX140N65B4H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; PLUS247™ Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 140A Power dissipation: 1.2kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 840A Mounting: THT Gate charge: 250nC Kind of package: tube Turn-on time: 128ns Turn-off time: 340ns | товар відсутній | |||||||||||||||
IXXX140N65B4H1 | IXYS | IGBTs PLUS247 650V 140A SN DIO | на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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IXXX160N65B4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™ Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 940W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 860A Mounting: THT Gate charge: 425nC Kind of package: tube Turn-on time: 93ns Turn-off time: 380ns | товар відсутній | |||||||||||||||
IXXX160N65B4 | Littelfuse | Trans IGBT Chip N-CH 650V 310A 940000mW 3-Pin(3+Tab) PLUS 247 | товар відсутній | |||||||||||||||
IXXX160N65B4 | Littelfuse | Trans IGBT Chip N-CH 650V 310A 940000mW 3-Pin(3+Tab) PLUS 247 | товар відсутній | |||||||||||||||
IXXX160N65B4 | IXYS | IGBTs 650V/310A TRENCH IGBT GENX4 XPT | на замовлення 269 шт: термін постачання 21-30 дні (днів) |
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IXXX160N65B4 | IXYS | Description: IGBT 650V 310A 940W PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 52ns/220ns Switching Energy: 3.3mJ (on), 1.88mJ (off) Test Condition: 400V, 80A, 1Ohm, 15V Gate Charge: 425 nC Part Status: Active Current - Collector (Ic) (Max): 310 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 860 A Power - Max: 940 W | на замовлення 519 шт: термін постачання 21-31 дні (днів) |
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IXXX160N65B4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™ Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 940W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 860A Mounting: THT Gate charge: 425nC Kind of package: tube Turn-on time: 93ns Turn-off time: 380ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXX160N65C4 | IXYS | IGBTs 650V/290A TRENCH IGBT GENX4 XPT | товар відсутній | |||||||||||||||
IXXX160N65C4 | IXYS | Description: IGBT 650V 290A 940W PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 52ns/197ns Switching Energy: 3.5mJ (on), 1.3mJ (off) Test Condition: 400V, 80A, 1Ohm, 15V Gate Charge: 422 nC Part Status: Active Current - Collector (Ic) (Max): 290 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 800 A Power - Max: 940 W | товар відсутній | |||||||||||||||
IXXX160N65C4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™ Type of transistor: IGBT Technology: GenX4™; XPT™ Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 940W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 320A Mounting: THT Gate charge: 422nC Kind of package: tube Turn-on time: 52ns Turn-off time: 197ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXX160N65C4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™ Type of transistor: IGBT Technology: GenX4™; XPT™ Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 940W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 320A Mounting: THT Gate charge: 422nC Kind of package: tube Turn-on time: 52ns Turn-off time: 197ns | товар відсутній | |||||||||||||||
IXXX160N65C4 | Littelfuse | Trans IGBT Chip N-CH 650V 290A 940000mW 3-Pin(3+Tab) PLUS 247 | товар відсутній | |||||||||||||||
IXXX200N60B3 | IXYS | Description: IGBT Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A Supplier Device Package: PLUS247™-3 Td (on/off) @ 25°C: 48ns/160ns Switching Energy: 2.85mJ (on), 4.4mJ (off) Test Condition: 360V, 100A, 1Ohm, 15V Gate Charge: 315 nC Part Status: Active Current - Collector (Ic) (Max): 380 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 900 A Power - Max: 1630 W | товар відсутній | |||||||||||||||
IXXX200N60B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; PLUS247™ Case: PLUS247™ Mounting: THT Technology: GenX3™; Planar; XPT™ Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 900A Turn-on time: 140ns Turn-off time: 395ns Type of transistor: IGBT Power dissipation: 1.63kW Kind of package: tube Gate charge: 315nC Collector-emitter voltage: 600V кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXX200N60B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; PLUS247™ Case: PLUS247™ Mounting: THT Technology: GenX3™; Planar; XPT™ Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 900A Turn-on time: 140ns Turn-off time: 395ns Type of transistor: IGBT Power dissipation: 1.63kW Kind of package: tube Gate charge: 315nC Collector-emitter voltage: 600V | товар відсутній | |||||||||||||||
IXXX200N60B3 | Littelfuse | Trans IGBT Chip N-CH 600V 380A 1630000mW 3-Pin(3+Tab) PLUS 247 | товар відсутній | |||||||||||||||
IXXX200N60B3 | IXYS | IGBT Transistors IGBT XPT-GENX3 | товар відсутній | |||||||||||||||
IXXX200N60C3 | IXYS | IGBT Transistors IGBT XPT-GENX3 | на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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IXXX200N60C3 | IXYS | Description: IGBT 600V 200A PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 47ns/125ns Switching Energy: 3mJ (on), 1.7mJ (off) Test Condition: 360V, 100A, 1Ohm, 15V Gate Charge: 315 nC Part Status: Active Current - Collector (Ic) (Max): 340 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 900 A | на замовлення 51 шт: термін постачання 21-31 дні (днів) |
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IXXX200N65B4 | LITTELFUSE | Description: LITTELFUSE - IXXX200N65B4 - IGBT, 480 A, 1.5 V, 1.63 kW, 650 V, PLUS247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.5V MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 1.63kW Bauform - Transistor: PLUS247 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 480A SVHC: Boric acid (14-Jun-2023) | на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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IXXX200N65B4 | IXYS | Description: IGBT 650V 370A 1150W PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 62ns/245ns Switching Energy: 4.4mJ (on), 2.2mJ (off) Test Condition: 400V, 100A, 1Ohm, 15V Gate Charge: 553 nC Part Status: Active Current - Collector (Ic) (Max): 370 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 1000 A Power - Max: 1150 W | на замовлення 531 шт: термін постачання 21-31 дні (днів) |
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IXXX200N65B4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; PLUS247™ Case: PLUS247™ Mounting: THT Technology: GenX4™; Trench; XPT™ Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 1kA Turn-on time: 135ns Turn-off time: 370ns Type of transistor: IGBT Power dissipation: 1.63kW Kind of package: tube Gate charge: 517nC Collector-emitter voltage: 650V кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXX200N65B4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; PLUS247™ Case: PLUS247™ Mounting: THT Technology: GenX4™; Trench; XPT™ Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 1kA Turn-on time: 135ns Turn-off time: 370ns Type of transistor: IGBT Power dissipation: 1.63kW Kind of package: tube Gate charge: 517nC Collector-emitter voltage: 650V | товар відсутній | |||||||||||||||
IXXX200N65B4 | Littelfuse | Trans IGBT Chip N-CH 650V 370A 1150000mW 3-Pin(3+Tab) PLUS 247 | товар відсутній | |||||||||||||||
IXXX200N65B4 | IXYS | IGBTs 650V/370A Trench IGBT GenX4 XPT | на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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IXXX300N60B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 300A Power dissipation: 2.3kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 1.14kA Mounting: THT Gate charge: 460nC Kind of package: tube Turn-on time: 137ns Turn-off time: 430ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IXXX300N60B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 300A Power dissipation: 2.3kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 1.14kA Mounting: THT Gate charge: 460nC Kind of package: tube Turn-on time: 137ns Turn-off time: 430ns | товар відсутній | |||||||||||||||
IXXX300N60B3 | IXYS | IGBT Transistors XPT 600V IGBT 300A | на замовлення 360 шт: термін постачання 21-30 дні (днів) |
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IXXX300N60B3 | Littelfuse | Trans IGBT Chip N-CH 600V 550A 2300000mW 3-Pin(3+Tab) PLUS 247 | товар відсутній | |||||||||||||||
IXXX300N60B3 | LITTELFUSE | Description: LITTELFUSE - IXXX300N60B3 - TRANSISTOR, IGBT, 600V, 550A, PLUS247 Kollektor-Emitter-Spannung, max.: 600 Verlustleistung: 2.3 Anzahl der Pins: 3 Bauform - Transistor: PLUS247 Kollektor-Emitter-Sättigungsspannung: 1.3 Kollektorstrom: 550 Betriebstemperatur, max.: 175 Produktpalette: XPT GenX3 Series SVHC: To Be Advised | на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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IXXX300N60B3 | IXYS | Description: IGBT PT 600V 550A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 50ns/190ns Switching Energy: 3.45mJ (on), 2.86mJ (off) Test Condition: 400V, 100A, 1Ohm, 15V Gate Charge: 460 nC Part Status: Active Current - Collector (Ic) (Max): 550 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 1140 A Power - Max: 2300 W | на замовлення 360 шт: термін постачання 21-31 дні (днів) |
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IXXX300N60B3 | Littelfuse | Trans IGBT Chip N-CH 600V 550A 2300000mW 3-Pin(3+Tab) PLUS 247 | товар відсутній | |||||||||||||||
IXXX300N60C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 300A Power dissipation: 2.3kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 1075A Mounting: THT Gate charge: 438nC Kind of package: tube Turn-on time: 128ns Turn-off time: 278ns | товар відсутній | |||||||||||||||
IXXX300N60C3 | IXYS | IGBT Transistors XPT 600V IGBT 300A | товар відсутній | |||||||||||||||
IXXX300N60C3 | Littelfuse | Trans IGBT Chip N-CH 600V 510A 2300000mW 3-Pin(3+Tab) PLUS 247 | товар відсутній | |||||||||||||||
IXXX300N60C3 | IXYS | Description: IGBT 600V 510A 2300W TO247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 50ns/160ns Switching Energy: 3.35mJ (on), 1.9mJ (off) Test Condition: 400V, 100A, 1Ohm, 15V Gate Charge: 438 nC Current - Collector (Ic) (Max): 510 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 1075 A Power - Max: 2300 W | товар відсутній | |||||||||||||||
IXXX300N60C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 300A Power dissipation: 2.3kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 1075A Mounting: THT Gate charge: 438nC Kind of package: tube Turn-on time: 128ns Turn-off time: 278ns кількість в упаковці: 1 шт | товар відсутній |