![IXXH75N60C3D1 IXXH75N60C3D1](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/202/TO-247-AD-EP-%28H%29.jpg)
IXXH75N60C3D1 IXYS
![littelfuse_discrete_igbts_xpt_ixxh75n60c3d1_datasheet.pdf.pdf](/images/adobe-acrobat.png)
Description: IGBT 600V 150A 750W TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/90ns
Switching Energy: 1.6mJ (on), 800µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 519.42 грн |
Відгуки про товар
Написати відгук
Технічний опис IXXH75N60C3D1 IXYS
Description: IGBT 600V 150A 750W TO247, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 25 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A, Supplier Device Package: TO-247AD, IGBT Type: PT, Td (on/off) @ 25°C: 35ns/90ns, Switching Energy: 1.6mJ (on), 800µJ (off), Test Condition: 400V, 60A, 5Ohm, 15V, Gate Charge: 107 nC, Part Status: Active, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 750 W.
Інші пропозиції IXXH75N60C3D1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
![]() |
IXXH75N60C3D1 | Виробник : IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 750W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 107nC Kind of package: tube Turn-on time: 105ns Turn-off time: 185ns кількість в упаковці: 1 шт |
товар відсутній |
|
![]() |
IXXH75N60C3D1 | Виробник : IXYS |
![]() |
товар відсутній |
|
![]() |
IXXH75N60C3D1 | Виробник : IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 750W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 107nC Kind of package: tube Turn-on time: 105ns Turn-off time: 185ns |
товар відсутній |