APT106N60B2C6 Microchip Technology
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Description: MOSFET N-CH 600V 106A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 53A, 10V
Power Dissipation (Max): 833W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.4mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8390 pF @ 25 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
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1+ | 1160.22 грн |
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Технічний опис APT106N60B2C6 Microchip Technology
Description: MOSFET N-CH 600V 106A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 106A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 53A, 10V, Power Dissipation (Max): 833W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 3.4mA, Supplier Device Package: T-MAX™ [B2], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8390 pF @ 25 V.
Інші пропозиції APT106N60B2C6
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APT106N60B2C6 | Виробник : Microchip Technology |
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товар відсутній |
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APT106N60B2C6 | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 68A; Idm: 318A; 833W; TO247MAX Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 68A Pulsed drain current: 318A Power dissipation: 833W Case: TO247MAX Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 308nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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APT106N60B2C6 | Виробник : Microchip / Microsemi |
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товар відсутній |
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![]() |
APT106N60B2C6 | Виробник : MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 68A; Idm: 318A; 833W; TO247MAX Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 68A Pulsed drain current: 318A Power dissipation: 833W Case: TO247MAX Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 308nC Kind of channel: enhanced |
товар відсутній |