| Фото | Назва | Виробник | Інформація |
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| IS61WV6416EEBLL-10BLI | ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
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| IS61WV6416EEBLL-10BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
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| IS64WV6416EEBLL-10CTLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
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IS61LV12824-10TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 3MbSRAM; 128kx24bit; 3.3V; 10ns; TQFP100; parallel Case: TQFP100 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V Kind of interface: parallel Memory: 3Mb SRAM Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx24bit Access time: 10ns |
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| IS61LV6416-10TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 10ns; TSOP44 II Case: TSOP44 II Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V Kind of interface: parallel Memory: 1Mb SRAM Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 64kx16bit Access time: 10ns |
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| IS64LF12836EC-7.5B3LA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 7.5ns Kind of interface: parallel Memory: 4.5Mb SRAM |
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| IS61LPS12836A-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; QFP100 Operating temperature: -40...85°C Mounting: SMD Kind of package: in-tray; tube Operating voltage: 3.3V Case: QFP100 Kind of interface: parallel Memory: 4.5Mb SRAM Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 3.1ns |
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| IS61WV25632BLL-10BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 256kx32bit; 2.4÷3.6V; 10ns; TFBGA90 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 256kx32bit Access time: 10ns Case: TFBGA90 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
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| IS61WV25632BLL-10BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 256kx32bit; 2.4÷3.6V; 10ns; TFBGA90 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 256kx32bit Access time: 10ns Case: TFBGA90 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
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| IS25WX064-JHLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; xSPI; 200MHz; 1.7÷2V; TFBGA24; serial Interface: xSPI Operating frequency: 200MHz Kind of interface: serial Memory: 64Mb FLASH Mounting: SMD Operating temperature: -40...105°C Case: TFBGA24 Operating voltage: 1.7...2V Type of integrated circuit: FLASH memory Kind of memory: Flash Kind of package: in-tray; tube |
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| IS25WX064-JHLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; xSPI; 200MHz; 1.7÷2V; TFBGA24; serial Interface: xSPI Operating frequency: 200MHz Kind of interface: serial Memory: 64Mb FLASH Mounting: SMD Operating temperature: -40...105°C Case: TFBGA24 Operating voltage: 1.7...2V Type of integrated circuit: FLASH memory Kind of memory: Flash Kind of package: reel; tape |
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| IS25WX256-JHLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; xSPI; 200MHz; 1.7÷2V; TFBGA24; serial Interface: xSPI Operating frequency: 200MHz Kind of interface: serial Memory: 256Mb FLASH Mounting: SMD Operating temperature: -40...105°C Case: TFBGA24 Operating voltage: 1.7...2V Type of integrated circuit: FLASH memory Kind of memory: Flash Kind of package: in-tray; tube |
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IS25LQ512B-JBLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; SO8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512kb FLASH Interface: SPI Operating frequency: 104MHz Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating voltage: 2.3...3.6V |
на замовлення 85 шт: термін постачання 21-30 дні (днів) |
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IS25LQ512B-JKLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; WSON8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512kb FLASH Interface: SPI Operating frequency: 104MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Dimensions: 6x5mm Operating voltage: 2.3...3.6V |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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IS25LQ512B-JNLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; SO8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512kb FLASH Interface: SPI Operating frequency: 104MHz Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating voltage: 2.3...3.6V |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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| IS25LP512M-RMLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Case: SO16 Mounting: SMD Operating temperature: -40...105°C Kind of interface: serial Kind of package: reel; tape Operating frequency: 133MHz Interface: DTR; QPI; SPI Operating voltage: 2.3...3.6V |
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| IS25LP512M-RMLE-TY | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Case: SO16 Mounting: SMD Operating temperature: -40...105°C Kind of interface: serial Kind of package: in-tray; tube Operating frequency: 133MHz Interface: DTR; QPI; SPI Operating voltage: 2.3...3.6V |
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| IS25LP512MG-RHLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 166MHz; 2.7÷3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Case: TFBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of interface: serial Kind of package: reel; tape Operating frequency: 166MHz Interface: DTR; QPI; SPI Operating voltage: 2.7...3.6V |
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| IS25LP512MH-RHLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.7÷3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Case: TFBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of interface: serial Kind of package: reel; tape Operating frequency: 133MHz Interface: DTR; QPI; SPI Operating voltage: 2.7...3.6V |
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IS25LP512MH-RMLE-TY | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.7÷3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Case: SOIC16 Mounting: SMD Operating temperature: -40...105°C Kind of interface: serial Kind of package: in-tray; tube Operating frequency: 133MHz Interface: DTR; QPI; SPI Operating voltage: 2.7...3.6V |
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IS61LF51218A-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100 Operating temperature: -40...85°C Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx18bit Access time: 7.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 9Mb SRAM Case: TQFP100 Operating voltage: 3.3V |
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IS61LF51218A-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100 Operating temperature: -40...85°C Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx18bit Access time: 7.5ns Kind of package: reel; tape Kind of interface: parallel Memory: 9Mb SRAM Case: TQFP100 Operating voltage: 3.3V |
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IS61NLP51218A-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx8bit; 3.3V; 200ns; TQFP100; parallel Operating temperature: -40...85°C Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx8bit Access time: 200ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 9Mb SRAM Case: TQFP100 Operating voltage: 3.3V |
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IS25WP080D-JBLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8 Operating temperature: -40...105°C Mounting: SMD Type of integrated circuit: FLASH memory Interface: DTR; QPI; SPI Kind of memory: NOR Flash Kind of package: reel; tape Operating frequency: 133MHz Kind of interface: serial Memory: 8Mb FLASH Case: SO8 Operating voltage: 1.65...1.95V |
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IS25WP080D-JBLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8 Operating temperature: -40...105°C Mounting: SMD Type of integrated circuit: FLASH memory Interface: DTR; QPI; SPI Kind of memory: NOR Flash Operating frequency: 133MHz Kind of interface: serial Memory: 8Mb FLASH Case: SO8 Operating voltage: 1.65...1.95V |
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| IS61WV12824-8BL-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 3MbSRAM; 128kx24bit; 3.3V; 8ns; PBGA119; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 3Mb SRAM Memory organisation: 128kx24bit Access time: 8ns Case: PBGA119 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape Operating voltage: 3.3V |
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| IS64WV10248EDBLL-10BLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1Mx8bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
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| IS61WV10248EDBLL-10BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1Mx8bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
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| IS61WV10248EDBLL-10BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1Mx8bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
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| IS64WV10248EDBLL-10CTLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1Mx8bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
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| IS64WV10248EDBLL-10CTLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1Mx8bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
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IS25LP064D-JBLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 64Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 166MHz Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Operating voltage: 2.3...3.6V |
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IS25LP064D-JBLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 64Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 166MHz Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 2.3...3.6V |
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IS25LP064D-JLLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 64Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 166MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Operating voltage: 2.3...3.6V |
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IS25LP064D-JLLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 64Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 166MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 2.3...3.6V |
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| IS61NLP25636A-200B3LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; PBGA165 Type of integrated circuit: SRAM memory Case: PBGA165 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 200ns Kind of interface: parallel Memory: 9Mb SRAM Operating voltage: 3.3V |
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IS61NLP25636A-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; TQFP100 Type of integrated circuit: SRAM memory Case: TQFP100 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 200ns Kind of interface: parallel Memory: 9Mb SRAM Operating voltage: 3.3V |
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IS25LQ020B-JNLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2MbFLASH; SPI; 104MHz; 2.3÷3.6V; SO8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 2Mb FLASH Interface: SPI Operating frequency: 104MHz Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating voltage: 2.3...3.6V |
на замовлення 71 шт: термін постачання 21-30 дні (днів) |
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IS25LQ032B-JKLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 32MbFLASH; SPI; 104MHz; 2.3÷3.6V; WSON8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 32Mb FLASH Interface: SPI Operating frequency: 104MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Dimensions: 6x5mm Operating voltage: 2.3...3.6V |
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IS25LQ032B-JLLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 32MbFLASH; SPI; 104MHz; 2.3÷3.6V; WSON8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 32Mb FLASH Interface: SPI Operating frequency: 104MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Dimensions: 8x6mm Operating voltage: 2.3...3.6V |
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IS25LQ032B-JMLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 32MbFLASH; SPI; 104MHz; 2.3÷3.6V; SO16; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 32Mb FLASH Interface: SPI Operating frequency: 104MHz Case: SO16 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating voltage: 2.3...3.6V |
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IS25WP020E-JNLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2MbFLASH; QPI,SPI; 104MHz; 1.65÷1.95V; SO8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 2Mb FLASH Interface: QPI; SPI Operating frequency: 104MHz Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 1.65...1.95V |
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| IS63LV1024L-10KLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 3.3V; 10ns; SOJ32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 10ns Case: SOJ32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V |
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IS64LF102436B-7.5TQLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 7.5ns; TQFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 1Mx36bit Access time: 7.5ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 3.3V |
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IS64LF102436B-7.5TQLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 7.5ns; TQFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 1Mx36bit Access time: 7.5ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 3.3V |
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IS61LF102436B-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 7.5ns; TQFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 1Mx36bit Access time: 7.5ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V |
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IS61NLF102436B-6.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 6.5ns; TQFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 1Mx36bit Access time: 6.5ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V |
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| IS63WV1288DBLL-10JLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.4÷3.6V; 10ns; SOJ32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 10ns Case: SOJ32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
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IS61WV6416DBLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: TSOP44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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| IS61LF51236B-6.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 6.5ns; QFP100 Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 18Mb SRAM Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 512kx36bit Access time: 6.5ns |
товар відсутній |
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| IS61LF51236B-7.5B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 18Mb SRAM Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 512kx36bit Access time: 7.5ns |
товар відсутній |
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| IS61LF51236B-7.5B3LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Memory: 18Mb SRAM Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 512kx36bit Access time: 7.5ns |
товар відсутній |
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| IS61LF51236B-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; QFP100 Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 18Mb SRAM Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 512kx36bit Access time: 7.5ns |
товар відсутній |
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| IS61LF51236B-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; QFP100 Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Memory: 18Mb SRAM Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 512kx36bit Access time: 7.5ns |
товар відсутній |
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| IS61VPS51236B-250B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 2.6ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 18Mb SRAM Operating voltage: 2.5V Kind of memory: SRAM Memory organisation: 512kx36bit Access time: 2.6ns |
товар відсутній |
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| IS61WV5128EDBLL-10TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
товар відсутній |
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IS61WV5128BLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
на замовлення 77 шт: термін постачання 21-30 дні (днів) |
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| IS61WV5128BLL-10TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TSOP32 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: TSOP32 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
товар відсутній |
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IS61WV25616BLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
товар відсутній |
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IS61C1024AL-12TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 12ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
товар відсутній |
| IS61WV6416EEBLL-10BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV6416EEBLL-10BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
| IS64WV6416EEBLL-10CTLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
| IS61LV12824-10TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 3MbSRAM; 128kx24bit; 3.3V; 10ns; TQFP100; parallel
Case: TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of interface: parallel
Memory: 3Mb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx24bit
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 3MbSRAM; 128kx24bit; 3.3V; 10ns; TQFP100; parallel
Case: TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of interface: parallel
Memory: 3Mb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx24bit
Access time: 10ns
товар відсутній
| IS61LV6416-10TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 10ns; TSOP44 II
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of interface: parallel
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 10ns; TSOP44 II
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of interface: parallel
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
товар відсутній
| IS64LF12836EC-7.5B3LA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
товар відсутній
| IS61LPS12836A-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; QFP100
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: in-tray; tube
Operating voltage: 3.3V
Case: QFP100
Kind of interface: parallel
Memory: 4.5Mb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; QFP100
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: in-tray; tube
Operating voltage: 3.3V
Case: QFP100
Kind of interface: parallel
Memory: 4.5Mb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
товар відсутній
| IS61WV25632BLL-10BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 256kx32bit; 2.4÷3.6V; 10ns; TFBGA90
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 256kx32bit
Access time: 10ns
Case: TFBGA90
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 256kx32bit; 2.4÷3.6V; 10ns; TFBGA90
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 256kx32bit
Access time: 10ns
Case: TFBGA90
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV25632BLL-10BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 256kx32bit; 2.4÷3.6V; 10ns; TFBGA90
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 256kx32bit
Access time: 10ns
Case: TFBGA90
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 256kx32bit; 2.4÷3.6V; 10ns; TFBGA90
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 256kx32bit
Access time: 10ns
Case: TFBGA90
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
| IS25WX064-JHLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; xSPI; 200MHz; 1.7÷2V; TFBGA24; serial
Interface: xSPI
Operating frequency: 200MHz
Kind of interface: serial
Memory: 64Mb FLASH
Mounting: SMD
Operating temperature: -40...105°C
Case: TFBGA24
Operating voltage: 1.7...2V
Type of integrated circuit: FLASH memory
Kind of memory: Flash
Kind of package: in-tray; tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; xSPI; 200MHz; 1.7÷2V; TFBGA24; serial
Interface: xSPI
Operating frequency: 200MHz
Kind of interface: serial
Memory: 64Mb FLASH
Mounting: SMD
Operating temperature: -40...105°C
Case: TFBGA24
Operating voltage: 1.7...2V
Type of integrated circuit: FLASH memory
Kind of memory: Flash
Kind of package: in-tray; tube
товар відсутній
| IS25WX064-JHLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; xSPI; 200MHz; 1.7÷2V; TFBGA24; serial
Interface: xSPI
Operating frequency: 200MHz
Kind of interface: serial
Memory: 64Mb FLASH
Mounting: SMD
Operating temperature: -40...105°C
Case: TFBGA24
Operating voltage: 1.7...2V
Type of integrated circuit: FLASH memory
Kind of memory: Flash
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; xSPI; 200MHz; 1.7÷2V; TFBGA24; serial
Interface: xSPI
Operating frequency: 200MHz
Kind of interface: serial
Memory: 64Mb FLASH
Mounting: SMD
Operating temperature: -40...105°C
Case: TFBGA24
Operating voltage: 1.7...2V
Type of integrated circuit: FLASH memory
Kind of memory: Flash
Kind of package: reel; tape
товар відсутній
| IS25WX256-JHLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; xSPI; 200MHz; 1.7÷2V; TFBGA24; serial
Interface: xSPI
Operating frequency: 200MHz
Kind of interface: serial
Memory: 256Mb FLASH
Mounting: SMD
Operating temperature: -40...105°C
Case: TFBGA24
Operating voltage: 1.7...2V
Type of integrated circuit: FLASH memory
Kind of memory: Flash
Kind of package: in-tray; tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; xSPI; 200MHz; 1.7÷2V; TFBGA24; serial
Interface: xSPI
Operating frequency: 200MHz
Kind of interface: serial
Memory: 256Mb FLASH
Mounting: SMD
Operating temperature: -40...105°C
Case: TFBGA24
Operating voltage: 1.7...2V
Type of integrated circuit: FLASH memory
Kind of memory: Flash
Kind of package: in-tray; tube
товар відсутній
| IS25LQ512B-JBLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512kb FLASH
Interface: SPI
Operating frequency: 104MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512kb FLASH
Interface: SPI
Operating frequency: 104MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.3...3.6V
на замовлення 85 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 51.2 грн |
| 9+ | 46.06 грн |
| IS25LQ512B-JKLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512kb FLASH
Interface: SPI
Operating frequency: 104MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512kb FLASH
Interface: SPI
Operating frequency: 104MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Operating voltage: 2.3...3.6V
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 57.2 грн |
| IS25LQ512B-JNLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512kb FLASH
Interface: SPI
Operating frequency: 104MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512kb FLASH
Interface: SPI
Operating frequency: 104MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.3...3.6V
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 74.29 грн |
| IS25LP512M-RMLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: SO16
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: reel; tape
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: SO16
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: reel; tape
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP512M-RMLE-TY |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: SO16
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: in-tray; tube
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: SO16
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: in-tray; tube
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP512MG-RHLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 166MHz; 2.7÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: reel; tape
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.7...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 166MHz; 2.7÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: reel; tape
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.7...3.6V
товар відсутній
| IS25LP512MH-RHLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.7÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: reel; tape
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.7...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.7÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: reel; tape
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.7...3.6V
товар відсутній
| IS25LP512MH-RMLE-TY |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.7÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: SOIC16
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: in-tray; tube
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.7...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.7÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: SOIC16
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: in-tray; tube
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.7...3.6V
товар відсутній
| IS61LF51218A-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Case: TQFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Case: TQFP100
Operating voltage: 3.3V
товар відсутній
| IS61LF51218A-7.5TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Case: TQFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Case: TQFP100
Operating voltage: 3.3V
товар відсутній
| IS61NLP51218A-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx8bit; 3.3V; 200ns; TQFP100; parallel
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx8bit
Access time: 200ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Case: TQFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx8bit; 3.3V; 200ns; TQFP100; parallel
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx8bit
Access time: 200ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Case: TQFP100
Operating voltage: 3.3V
товар відсутній
| IS25WP080D-JBLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 8Mb FLASH
Case: SO8
Operating voltage: 1.65...1.95V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 8Mb FLASH
Case: SO8
Operating voltage: 1.65...1.95V
товар відсутній
| IS25WP080D-JBLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 8Mb FLASH
Case: SO8
Operating voltage: 1.65...1.95V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 8Mb FLASH
Case: SO8
Operating voltage: 1.65...1.95V
товар відсутній
| IS61WV12824-8BL-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 3MbSRAM; 128kx24bit; 3.3V; 8ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 3Mb SRAM
Memory organisation: 128kx24bit
Access time: 8ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 3MbSRAM; 128kx24bit; 3.3V; 8ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 3Mb SRAM
Memory organisation: 128kx24bit
Access time: 8ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Operating voltage: 3.3V
товар відсутній
| IS64WV10248EDBLL-10BLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV10248EDBLL-10BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV10248EDBLL-10BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
| IS64WV10248EDBLL-10CTLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
| IS64WV10248EDBLL-10CTLA3-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
| IS25LP064D-JBLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 166MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 166MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP064D-JBLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 166MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 166MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP064D-JLLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 166MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 166MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP064D-JLLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 166MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 166MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
товар відсутній
| IS61NLP25636A-200B3LI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; PBGA165
Type of integrated circuit: SRAM memory
Case: PBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 200ns
Kind of interface: parallel
Memory: 9Mb SRAM
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; PBGA165
Type of integrated circuit: SRAM memory
Case: PBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 200ns
Kind of interface: parallel
Memory: 9Mb SRAM
Operating voltage: 3.3V
товар відсутній
| IS61NLP25636A-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; TQFP100
Type of integrated circuit: SRAM memory
Case: TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 200ns
Kind of interface: parallel
Memory: 9Mb SRAM
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; TQFP100
Type of integrated circuit: SRAM memory
Case: TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 200ns
Kind of interface: parallel
Memory: 9Mb SRAM
Operating voltage: 3.3V
товар відсутній
| IS25LQ020B-JNLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; SPI; 104MHz; 2.3÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 2Mb FLASH
Interface: SPI
Operating frequency: 104MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; SPI; 104MHz; 2.3÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 2Mb FLASH
Interface: SPI
Operating frequency: 104MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.3...3.6V
на замовлення 71 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 52.8 грн |
| 11+ | 35.66 грн |
| 25+ | 33.8 грн |
| 70+ | 32.46 грн |
| IS25LQ032B-JKLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; SPI; 104MHz; 2.3÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 32Mb FLASH
Interface: SPI
Operating frequency: 104MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; SPI; 104MHz; 2.3÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 32Mb FLASH
Interface: SPI
Operating frequency: 104MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LQ032B-JLLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; SPI; 104MHz; 2.3÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 32Mb FLASH
Interface: SPI
Operating frequency: 104MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 8x6mm
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; SPI; 104MHz; 2.3÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 32Mb FLASH
Interface: SPI
Operating frequency: 104MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 8x6mm
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LQ032B-JMLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; SPI; 104MHz; 2.3÷3.6V; SO16; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 32Mb FLASH
Interface: SPI
Operating frequency: 104MHz
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; SPI; 104MHz; 2.3÷3.6V; SO16; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 32Mb FLASH
Interface: SPI
Operating frequency: 104MHz
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.3...3.6V
товар відсутній
| IS25WP020E-JNLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; QPI,SPI; 104MHz; 1.65÷1.95V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 2Mb FLASH
Interface: QPI; SPI
Operating frequency: 104MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 1.65...1.95V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; QPI,SPI; 104MHz; 1.65÷1.95V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 2Mb FLASH
Interface: QPI; SPI
Operating frequency: 104MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 1.65...1.95V
товар відсутній
| IS63LV1024L-10KLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 3.3V; 10ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 3.3V; 10ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
товар відсутній
| IS64LF102436B-7.5TQLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 7.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 7.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
товар відсутній
| IS64LF102436B-7.5TQLA3-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 7.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 7.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 3.3V
товар відсутній
| IS61LF102436B-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 7.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 7.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
товар відсутній
| IS61NLF102436B-6.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 6.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Access time: 6.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 6.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Access time: 6.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
товар відсутній
| IS63WV1288DBLL-10JLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.4÷3.6V; 10ns; SOJ32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.4÷3.6V; 10ns; SOJ32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV6416DBLL-10TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 206.4 грн |
| 3+ | 178.29 грн |
| 6+ | 143.37 грн |
| 17+ | 135.2 грн |
| IS61LF51236B-6.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 6.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 18Mb SRAM
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 6.5ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 6.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 18Mb SRAM
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 6.5ns
товар відсутній
| IS61LF51236B-7.5B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 18Mb SRAM
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 7.5ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 18Mb SRAM
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 7.5ns
товар відсутній
| IS61LF51236B-7.5B3LI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 18Mb SRAM
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 7.5ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 18Mb SRAM
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 7.5ns
товар відсутній
| IS61LF51236B-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 18Mb SRAM
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 7.5ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 18Mb SRAM
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 7.5ns
товар відсутній
| IS61LF51236B-7.5TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 18Mb SRAM
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 7.5ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 18Mb SRAM
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 7.5ns
товар відсутній
| IS61VPS51236B-250B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 2.6ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 18Mb SRAM
Operating voltage: 2.5V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 2.6ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 2.6ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 18Mb SRAM
Operating voltage: 2.5V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 2.6ns
товар відсутній
| IS61WV5128EDBLL-10TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV5128BLL-10TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
на замовлення 77 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 309.6 грн |
| 4+ | 275.6 грн |
| 5+ | 274.86 грн |
| 9+ | 260 грн |
| 25+ | 250.34 грн |
| IS61WV5128BLL-10TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TSOP32 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: TSOP32 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TSOP32 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: TSOP32 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV25616BLL-10TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
товар відсутній
| IS61C1024AL-12TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 12ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
товар відсутній