| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IS42S83200J-6TLI-TR | ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 8Mx8bitx4; 166MHz; 6ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx8bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
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| IS42S83200J-7TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx8bitx4; 143MHz; 7ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx8bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
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| IS42S83200J-7TL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx8bitx4; 143MHz; 7ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx8bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
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| IS42S83200J-7TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx8bitx4; 143MHz; 7ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx8bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
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| IS42S86400F-6TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Memory: 512Mb DRAM Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx8bitx4 Access time: 6ns Clock frequency: 167MHz Kind of package: in-tray; tube |
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| IS42S86400F-6TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 512Mb DRAM Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx8bitx4 Access time: 6ns Clock frequency: 167MHz Kind of package: in-tray; tube |
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| IS42S86400F-6TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 512Mb DRAM Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx8bitx4 Access time: 6ns Clock frequency: 167MHz Kind of package: reel; tape |
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| IS42S86400F-7TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Memory: 512Mb DRAM Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx8bitx4 Access time: 7ns Clock frequency: 143MHz Kind of package: in-tray; tube |
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| IS42S86400F-7TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 512Mb DRAM Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx8bitx4 Access time: 7ns Clock frequency: 143MHz Kind of package: in-tray; tube |
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| IS42S86400F-7TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 512Mb DRAM Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 16Mx8bitx4 Access time: 7ns Clock frequency: 143MHz Kind of package: reel; tape |
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| IS42SM16160K-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bitx4; 166MHz; 6ns; TFBGA54; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.7...3.6V DC |
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| IS42SM16160K-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bitx4; 166MHz; 6ns; TFBGA54; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.7...3.6V DC |
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| IS42SM16160K-75BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bitx4; 133MHz; 7.5ns; TFBGA54; -40÷85°C Supply voltage: 2.7...3.6V DC Kind of package: in-tray; tube Operating temperature: -40...85°C Kind of memory: SDRAM Access time: 7.5ns Type of integrated circuit: DRAM memory Clock frequency: 133MHz Memory capacity: 256Mb Kind of interface: parallel Memory organisation: 4Mx16bitx4 Case: TFBGA54 Mounting: SMD |
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| IS42SM16160K-75BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bitx4; 133MHz; 7.5ns; TFBGA54; -40÷85°C Supply voltage: 2.7...3.6V DC Kind of package: reel; tape Operating temperature: -40...85°C Kind of memory: SDRAM Access time: 7.5ns Type of integrated circuit: DRAM memory Clock frequency: 133MHz Memory capacity: 256Mb Kind of interface: parallel Memory organisation: 4Mx16bitx4 Case: TFBGA54 Mounting: SMD |
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| IS42SM16320E-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.7...3.6V DC |
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| IS42SM16320E-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.7...3.6V DC |
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| IS42SM16320E-75BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 133MHz; 7.5ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 133MHz Access time: 7.5ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.7...3.6V DC |
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| IS42SM16400M-75BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 133MHz; 7.5ns; TFBGA54 Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Clock frequency: 133MHz Memory: 64Mb DRAM Kind of interface: parallel Memory organisation: 1Mx16bitx4 Kind of package: in-tray; tube Case: TFBGA54 Kind of memory: SDRAM Mounting: SMD Supply voltage: 3...3.6V DC Access time: 7.5ns |
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| IS42SM16800H-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.7...3.6V DC |
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| IS42SM16800H-75BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 133MHz; 7.5ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 133MHz Access time: 7.5ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.7...3.6V DC |
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| IS42SM16800H-75BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 133MHz; 7.5ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 133MHz Access time: 7.5ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.7...3.6V DC |
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| IS42SM32100D-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512kx32bitx2; 166MHz; 6ns; TFBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 512kx32bitx2 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Memory capacity: 32Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.7...3.6V DC |
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| IS42SM32100D-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512kx32bitx2; 166MHz; 6ns; TFBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 512kx32bitx2 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Memory capacity: 32Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.7...3.6V DC |
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| IS42SM32160E-75BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bitx4; 133MHz; 7.5ns; TFBGA90; -40÷85°C Supply voltage: 2.7...3.6V DC Kind of package: in-tray; tube Operating temperature: -40...85°C Kind of memory: SDRAM Access time: 7.5ns Type of integrated circuit: DRAM memory Clock frequency: 133MHz Memory capacity: 512Mb Kind of interface: parallel Memory organisation: 4Mx32bitx4 Case: TFBGA90 Mounting: SMD |
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| IS42SM32160E-75BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bitx4; 133MHz; 7.5ns; TFBGA90; -40÷85°C Supply voltage: 2.7...3.6V DC Kind of package: reel; tape Operating temperature: -40...85°C Kind of memory: SDRAM Access time: 7.5ns Type of integrated circuit: DRAM memory Clock frequency: 133MHz Memory capacity: 512Mb Kind of interface: parallel Memory organisation: 4Mx32bitx4 Case: TFBGA90 Mounting: SMD |
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| IS42SM32200M-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TFBGA90 Supply voltage: 3...3.6V DC Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 64Mb DRAM Case: TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 512kx32bitx4 Access time: 6ns Clock frequency: 166MHz |
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| IS42SM32200M-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TFBGA90 Supply voltage: 3...3.6V DC Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Memory: 64Mb DRAM Case: TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 512kx32bitx4 Access time: 6ns Clock frequency: 166MHz |
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| IS42SM32400H-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90 Memory: 128Mb DRAM Supply voltage: 2.7...3.6V DC Clock frequency: 166MHz Kind of interface: parallel Memory organisation: 1Mx32bitx4 Kind of package: in-tray; tube Case: TFBGA90 Kind of memory: SDRAM Mounting: SMD Access time: 6ns Type of integrated circuit: DRAM memory Operating temperature: -40...85°C |
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| IS42SM32400H-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90 Memory: 128Mb DRAM Supply voltage: 2.7...3.6V DC Clock frequency: 166MHz Kind of interface: parallel Memory organisation: 1Mx32bitx4 Kind of package: reel; tape Case: TFBGA90 Kind of memory: SDRAM Mounting: SMD Access time: 6ns Type of integrated circuit: DRAM memory Operating temperature: -40...85°C |
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| IS42SM32400H-75BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 133MHz; 7.5ns; TFBGA90 Memory: 128Mb DRAM Supply voltage: 2.7...3.6V DC Clock frequency: 133MHz Kind of interface: parallel Memory organisation: 1Mx32bitx4 Kind of package: in-tray; tube Case: TFBGA90 Kind of memory: SDRAM Mounting: SMD Access time: 7.5ns Type of integrated circuit: DRAM memory Operating temperature: -40...85°C |
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| IS42SM32400H-75BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 133MHz; 7.5ns; TFBGA90 Memory: 128Mb DRAM Supply voltage: 2.7...3.6V DC Clock frequency: 133MHz Kind of interface: parallel Memory organisation: 1Mx32bitx4 Kind of package: reel; tape Case: TFBGA90 Kind of memory: SDRAM Mounting: SMD Access time: 7.5ns Type of integrated circuit: DRAM memory Operating temperature: -40...85°C |
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| IS42SM32800K-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90 Operating temperature: -40...85°C Kind of interface: parallel Memory: 256Mb DRAM Mounting: SMD Case: TFBGA90 Supply voltage: 2.7...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx32bitx4 Access time: 6ns Clock frequency: 166MHz Kind of package: in-tray; tube |
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| IS42SM32800K-75BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90 Operating temperature: -40...85°C Kind of interface: parallel Memory: 256Mb DRAM Mounting: SMD Case: TFBGA90 Supply voltage: 2.7...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx32bitx4 Access time: 7.5ns Clock frequency: 133MHz Kind of package: in-tray; tube |
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| IS42SM32800K-75BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90 Operating temperature: -40...85°C Kind of interface: parallel Memory: 256Mb DRAM Mounting: SMD Case: TFBGA90 Supply voltage: 2.7...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx32bitx4 Access time: 7.5ns Clock frequency: 133MHz Kind of package: reel; tape |
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| IS42VM16160K-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bitx4; 166MHz; 6ns; TFBGA54; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
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| IS42VM16160K-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bitx4; 166MHz; 6ns; TFBGA54; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
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| IS42VM16160K-75BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bitx4; 133MHz; 7.5ns; TFBGA54; -40÷85°C Supply voltage: 1.7...1.95V DC Kind of package: in-tray; tube Operating temperature: -40...85°C Kind of memory: SDRAM Access time: 7.5ns Type of integrated circuit: DRAM memory Clock frequency: 133MHz Memory capacity: 256Mb Kind of interface: parallel Memory organisation: 4Mx16bitx4 Case: TFBGA54 Mounting: SMD |
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| IS42VM16160K-75BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bitx4; 133MHz; 7.5ns; TFBGA54; -40÷85°C Supply voltage: 1.7...1.95V DC Kind of package: reel; tape Operating temperature: -40...85°C Kind of memory: SDRAM Access time: 7.5ns Type of integrated circuit: DRAM memory Clock frequency: 133MHz Memory capacity: 256Mb Kind of interface: parallel Memory organisation: 4Mx16bitx4 Case: TFBGA54 Mounting: SMD |
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| IS42VM16200D-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx16bitx2; 166MHz; 6ns; TFBGA54; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx16bitx2 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Memory capacity: 32Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
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| IS42VM16200D-75BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx16bitx2; 133MHz; 7.5ns; TFBGA54; -40÷85°C Supply voltage: 1.7...1.95V DC Kind of package: in-tray; tube Operating temperature: -40...85°C Kind of memory: SDRAM Access time: 7.5ns Type of integrated circuit: DRAM memory Clock frequency: 133MHz Memory capacity: 32Mb Kind of interface: parallel Memory organisation: 1Mx16bitx2 Case: TFBGA54 Mounting: SMD |
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| IS42VM16200D-75BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx16bitx2; 133MHz; 7.5ns; TFBGA54; -40÷85°C Supply voltage: 1.7...1.95V DC Kind of package: reel; tape Operating temperature: -40...85°C Kind of memory: SDRAM Access time: 7.5ns Type of integrated circuit: DRAM memory Clock frequency: 133MHz Memory capacity: 32Mb Kind of interface: parallel Memory organisation: 1Mx16bitx2 Case: TFBGA54 Mounting: SMD |
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| IS42VM16320E-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
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| IS42VM16320E-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
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| IS42VM16320E-75BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 133MHz; 7.5ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 133MHz Access time: 7.5ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
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| IS42VM16320E-75BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 133MHz; 7.5ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 133MHz Access time: 7.5ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
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| IS42VM16400M-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54 Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Clock frequency: 166MHz Memory: 64Mb DRAM Kind of interface: parallel Memory organisation: 1Mx16bitx4 Kind of package: in-tray; tube Case: TFBGA54 Kind of memory: SDRAM Mounting: SMD Supply voltage: 1.7...1.95V DC Access time: 6ns |
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| IS42VM16400M-75BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 133MHz; 7.5ns; TFBGA54 Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Clock frequency: 133MHz Memory: 64Mb DRAM Kind of interface: parallel Memory organisation: 1Mx16bitx4 Kind of package: in-tray; tube Case: TFBGA54 Kind of memory: SDRAM Mounting: SMD Supply voltage: 1.7...1.95V DC Access time: 7.5ns |
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| IS42VM16400M-75BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 133MHz; 7.5ns; TFBGA54 Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Clock frequency: 133MHz Memory: 64Mb DRAM Kind of interface: parallel Memory organisation: 1Mx16bitx4 Kind of package: reel; tape Case: TFBGA54 Kind of memory: SDRAM Mounting: SMD Supply voltage: 1.7...1.95V DC Access time: 7.5ns |
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| IS42VM16800H-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.7...1.95V DC Kind of package: in-tray; tube Kind of interface: parallel Memory: 128Mb DRAM Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz |
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| IS42VM16800H-75BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 133MHz; 7.5ns; TFBGA54; -40÷85°C Supply voltage: 1.7...1.95V DC Kind of package: in-tray; tube Operating temperature: -40...85°C Kind of memory: SDRAM Access time: 7.5ns Type of integrated circuit: DRAM memory Clock frequency: 133MHz Memory capacity: 128Mb Kind of interface: parallel Memory organisation: 2Mx16bitx4 Case: TFBGA54 Mounting: SMD |
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| IS42VM16800H-75BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 133MHz; 7.5ns; TFBGA54; -40÷85°C Supply voltage: 1.7...1.95V DC Kind of package: reel; tape Operating temperature: -40...85°C Kind of memory: SDRAM Access time: 7.5ns Type of integrated circuit: DRAM memory Clock frequency: 133MHz Memory capacity: 128Mb Kind of interface: parallel Memory organisation: 2Mx16bitx4 Case: TFBGA54 Mounting: SMD |
товар відсутній |
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| IS42VM32160E-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bitx4; 166MHz; 6ns; TFBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
товар відсутній |
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| IS42VM32160E-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bitx4; 166MHz; 6ns; TFBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
товар відсутній |
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| IS42VM32160E-75BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bitx4; 133MHz; 7.5ns; TFBGA90; -40÷85°C Supply voltage: 1.7...1.95V DC Kind of package: in-tray; tube Operating temperature: -40...85°C Kind of memory: SDRAM Access time: 7.5ns Type of integrated circuit: DRAM memory Clock frequency: 133MHz Memory capacity: 512Mb Kind of interface: parallel Memory organisation: 4Mx32bitx4 Case: TFBGA90 Mounting: SMD |
товар відсутній |
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| IS42VM32160E-75BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bitx4; 133MHz; 7.5ns; TFBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx32bitx4 Clock frequency: 133MHz Access time: 7.5ns Case: TFBGA90 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
товар відсутній |
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| IS42VM32200M-75BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 133MHz; 7.5ns; TFBGA90 Supply voltage: 1.7...1.95V DC Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 64Mb DRAM Case: TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 512kx32bitx4 Access time: 7.5ns Clock frequency: 133MHz |
товар відсутній |
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| IS42VM32200M-75BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 133MHz; 7.5ns; TFBGA90 Supply voltage: 1.7...1.95V DC Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Memory: 64Mb DRAM Case: TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 512kx32bitx4 Access time: 7.5ns Clock frequency: 133MHz |
товар відсутній |
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| IS42VM32400H-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90 Memory: 128Mb DRAM Supply voltage: 1.7...1.95V DC Clock frequency: 166MHz Kind of interface: parallel Memory organisation: 1Mx32bitx4 Kind of package: in-tray; tube Case: TFBGA90 Kind of memory: SDRAM Mounting: SMD Access time: 6ns Type of integrated circuit: DRAM memory Operating temperature: -40...85°C |
товар відсутній |
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| IS42VM32400H-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90 Memory: 128Mb DRAM Supply voltage: 1.7...1.95V DC Clock frequency: 166MHz Kind of interface: parallel Memory organisation: 1Mx32bitx4 Kind of package: reel; tape Case: TFBGA90 Kind of memory: SDRAM Mounting: SMD Access time: 6ns Type of integrated circuit: DRAM memory Operating temperature: -40...85°C |
товар відсутній |
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| IS42VM32400H-75BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 133MHz; 7.5ns; TFBGA90 Memory: 128Mb DRAM Supply voltage: 1.7...1.95V DC Clock frequency: 133MHz Kind of interface: parallel Memory organisation: 1Mx32bitx4 Kind of package: in-tray; tube Case: TFBGA90 Kind of memory: SDRAM Mounting: SMD Access time: 7.5ns Type of integrated circuit: DRAM memory Operating temperature: -40...85°C |
товар відсутній |
| IS42S83200J-6TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx8bitx4; 166MHz; 6ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx8bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx8bitx4; 166MHz; 6ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx8bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
| IS42S83200J-7TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx8bitx4; 143MHz; 7ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx8bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx8bitx4; 143MHz; 7ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx8bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
| IS42S83200J-7TL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx8bitx4; 143MHz; 7ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx8bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx8bitx4; 143MHz; 7ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx8bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
| IS42S83200J-7TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx8bitx4; 143MHz; 7ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx8bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx8bitx4; 143MHz; 7ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx8bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
| IS42S86400F-6TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx8bitx4
Access time: 6ns
Clock frequency: 167MHz
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx8bitx4
Access time: 6ns
Clock frequency: 167MHz
Kind of package: in-tray; tube
товар відсутній
| IS42S86400F-6TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx8bitx4
Access time: 6ns
Clock frequency: 167MHz
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx8bitx4
Access time: 6ns
Clock frequency: 167MHz
Kind of package: in-tray; tube
товар відсутній
| IS42S86400F-6TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx8bitx4
Access time: 6ns
Clock frequency: 167MHz
Kind of package: reel; tape
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx8bitx4
Access time: 6ns
Clock frequency: 167MHz
Kind of package: reel; tape
товар відсутній
| IS42S86400F-7TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx8bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx8bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of package: in-tray; tube
товар відсутній
| IS42S86400F-7TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx8bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx8bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of package: in-tray; tube
товар відсутній
| IS42S86400F-7TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx8bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of package: reel; tape
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx8bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of package: reel; tape
товар відсутній
| IS42SM16160K-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 166MHz; 6ns; TFBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.7...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 166MHz; 6ns; TFBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.7...3.6V DC
товар відсутній
| IS42SM16160K-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 166MHz; 6ns; TFBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 166MHz; 6ns; TFBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
товар відсутній
| IS42SM16160K-75BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 133MHz; 7.5ns; TFBGA54; -40÷85°C
Supply voltage: 2.7...3.6V DC
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Case: TFBGA54
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 133MHz; 7.5ns; TFBGA54; -40÷85°C
Supply voltage: 2.7...3.6V DC
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Case: TFBGA54
Mounting: SMD
товар відсутній
| IS42SM16160K-75BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 133MHz; 7.5ns; TFBGA54; -40÷85°C
Supply voltage: 2.7...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Case: TFBGA54
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 133MHz; 7.5ns; TFBGA54; -40÷85°C
Supply voltage: 2.7...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Case: TFBGA54
Mounting: SMD
товар відсутній
| IS42SM16320E-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.7...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.7...3.6V DC
товар відсутній
| IS42SM16320E-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
товар відсутній
| IS42SM16320E-75BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 133MHz
Access time: 7.5ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.7...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 133MHz
Access time: 7.5ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.7...3.6V DC
товар відсутній
| IS42SM16400M-75BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory: 64Mb DRAM
Kind of interface: parallel
Memory organisation: 1Mx16bitx4
Kind of package: in-tray; tube
Case: TFBGA54
Kind of memory: SDRAM
Mounting: SMD
Supply voltage: 3...3.6V DC
Access time: 7.5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory: 64Mb DRAM
Kind of interface: parallel
Memory organisation: 1Mx16bitx4
Kind of package: in-tray; tube
Case: TFBGA54
Kind of memory: SDRAM
Mounting: SMD
Supply voltage: 3...3.6V DC
Access time: 7.5ns
товар відсутній
| IS42SM16800H-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.7...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.7...3.6V DC
товар відсутній
| IS42SM16800H-75BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 133MHz
Access time: 7.5ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.7...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 133MHz
Access time: 7.5ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.7...3.6V DC
товар відсутній
| IS42SM16800H-75BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 133MHz
Access time: 7.5ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 133MHz
Access time: 7.5ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
товар відсутній
| IS42SM32100D-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512kx32bitx2; 166MHz; 6ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx32bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Memory capacity: 32Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.7...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512kx32bitx2; 166MHz; 6ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx32bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Memory capacity: 32Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.7...3.6V DC
товар відсутній
| IS42SM32100D-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512kx32bitx2; 166MHz; 6ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx32bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Memory capacity: 32Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512kx32bitx2; 166MHz; 6ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx32bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Memory capacity: 32Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
товар відсутній
| IS42SM32160E-75BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bitx4; 133MHz; 7.5ns; TFBGA90; -40÷85°C
Supply voltage: 2.7...3.6V DC
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 512Mb
Kind of interface: parallel
Memory organisation: 4Mx32bitx4
Case: TFBGA90
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bitx4; 133MHz; 7.5ns; TFBGA90; -40÷85°C
Supply voltage: 2.7...3.6V DC
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 512Mb
Kind of interface: parallel
Memory organisation: 4Mx32bitx4
Case: TFBGA90
Mounting: SMD
товар відсутній
| IS42SM32160E-75BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bitx4; 133MHz; 7.5ns; TFBGA90; -40÷85°C
Supply voltage: 2.7...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 512Mb
Kind of interface: parallel
Memory organisation: 4Mx32bitx4
Case: TFBGA90
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bitx4; 133MHz; 7.5ns; TFBGA90; -40÷85°C
Supply voltage: 2.7...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 512Mb
Kind of interface: parallel
Memory organisation: 4Mx32bitx4
Case: TFBGA90
Mounting: SMD
товар відсутній
| IS42SM32200M-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TFBGA90
Supply voltage: 3...3.6V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 64Mb DRAM
Case: TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx32bitx4
Access time: 6ns
Clock frequency: 166MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TFBGA90
Supply voltage: 3...3.6V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 64Mb DRAM
Case: TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx32bitx4
Access time: 6ns
Clock frequency: 166MHz
товар відсутній
| IS42SM32200M-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TFBGA90
Supply voltage: 3...3.6V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 64Mb DRAM
Case: TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx32bitx4
Access time: 6ns
Clock frequency: 166MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TFBGA90
Supply voltage: 3...3.6V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 64Mb DRAM
Case: TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx32bitx4
Access time: 6ns
Clock frequency: 166MHz
товар відсутній
| IS42SM32400H-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Memory: 128Mb DRAM
Supply voltage: 2.7...3.6V DC
Clock frequency: 166MHz
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Kind of package: in-tray; tube
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Memory: 128Mb DRAM
Supply voltage: 2.7...3.6V DC
Clock frequency: 166MHz
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Kind of package: in-tray; tube
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
товар відсутній
| IS42SM32400H-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Memory: 128Mb DRAM
Supply voltage: 2.7...3.6V DC
Clock frequency: 166MHz
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Kind of package: reel; tape
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Memory: 128Mb DRAM
Supply voltage: 2.7...3.6V DC
Clock frequency: 166MHz
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Kind of package: reel; tape
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
товар відсутній
| IS42SM32400H-75BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Memory: 128Mb DRAM
Supply voltage: 2.7...3.6V DC
Clock frequency: 133MHz
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Kind of package: in-tray; tube
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Memory: 128Mb DRAM
Supply voltage: 2.7...3.6V DC
Clock frequency: 133MHz
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Kind of package: in-tray; tube
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
товар відсутній
| IS42SM32400H-75BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Memory: 128Mb DRAM
Supply voltage: 2.7...3.6V DC
Clock frequency: 133MHz
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Kind of package: reel; tape
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Memory: 128Mb DRAM
Supply voltage: 2.7...3.6V DC
Clock frequency: 133MHz
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Kind of package: reel; tape
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
товар відсутній
| IS42SM32800K-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 256Mb DRAM
Mounting: SMD
Case: TFBGA90
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx32bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 256Mb DRAM
Mounting: SMD
Case: TFBGA90
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx32bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of package: in-tray; tube
товар відсутній
| IS42SM32800K-75BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 256Mb DRAM
Mounting: SMD
Case: TFBGA90
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx32bitx4
Access time: 7.5ns
Clock frequency: 133MHz
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 256Mb DRAM
Mounting: SMD
Case: TFBGA90
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx32bitx4
Access time: 7.5ns
Clock frequency: 133MHz
Kind of package: in-tray; tube
товар відсутній
| IS42SM32800K-75BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 256Mb DRAM
Mounting: SMD
Case: TFBGA90
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx32bitx4
Access time: 7.5ns
Clock frequency: 133MHz
Kind of package: reel; tape
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 256Mb DRAM
Mounting: SMD
Case: TFBGA90
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx32bitx4
Access time: 7.5ns
Clock frequency: 133MHz
Kind of package: reel; tape
товар відсутній
| IS42VM16160K-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 166MHz; 6ns; TFBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 166MHz; 6ns; TFBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS42VM16160K-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 166MHz; 6ns; TFBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 166MHz; 6ns; TFBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS42VM16160K-75BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 133MHz; 7.5ns; TFBGA54; -40÷85°C
Supply voltage: 1.7...1.95V DC
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Case: TFBGA54
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 133MHz; 7.5ns; TFBGA54; -40÷85°C
Supply voltage: 1.7...1.95V DC
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Case: TFBGA54
Mounting: SMD
товар відсутній
| IS42VM16160K-75BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 133MHz; 7.5ns; TFBGA54; -40÷85°C
Supply voltage: 1.7...1.95V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Case: TFBGA54
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 133MHz; 7.5ns; TFBGA54; -40÷85°C
Supply voltage: 1.7...1.95V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Case: TFBGA54
Mounting: SMD
товар відсутній
| IS42VM16200D-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx2; 166MHz; 6ns; TFBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Memory capacity: 32Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx2; 166MHz; 6ns; TFBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Memory capacity: 32Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS42VM16200D-75BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx2; 133MHz; 7.5ns; TFBGA54; -40÷85°C
Supply voltage: 1.7...1.95V DC
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 32Mb
Kind of interface: parallel
Memory organisation: 1Mx16bitx2
Case: TFBGA54
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx2; 133MHz; 7.5ns; TFBGA54; -40÷85°C
Supply voltage: 1.7...1.95V DC
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 32Mb
Kind of interface: parallel
Memory organisation: 1Mx16bitx2
Case: TFBGA54
Mounting: SMD
товар відсутній
| IS42VM16200D-75BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx2; 133MHz; 7.5ns; TFBGA54; -40÷85°C
Supply voltage: 1.7...1.95V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 32Mb
Kind of interface: parallel
Memory organisation: 1Mx16bitx2
Case: TFBGA54
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx2; 133MHz; 7.5ns; TFBGA54; -40÷85°C
Supply voltage: 1.7...1.95V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 32Mb
Kind of interface: parallel
Memory organisation: 1Mx16bitx2
Case: TFBGA54
Mounting: SMD
товар відсутній
| IS42VM16320E-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS42VM16320E-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS42VM16320E-75BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 133MHz
Access time: 7.5ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 133MHz
Access time: 7.5ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS42VM16320E-75BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 133MHz
Access time: 7.5ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 133MHz
Access time: 7.5ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS42VM16400M-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Clock frequency: 166MHz
Memory: 64Mb DRAM
Kind of interface: parallel
Memory organisation: 1Mx16bitx4
Kind of package: in-tray; tube
Case: TFBGA54
Kind of memory: SDRAM
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Clock frequency: 166MHz
Memory: 64Mb DRAM
Kind of interface: parallel
Memory organisation: 1Mx16bitx4
Kind of package: in-tray; tube
Case: TFBGA54
Kind of memory: SDRAM
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Access time: 6ns
товар відсутній
| IS42VM16400M-75BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory: 64Mb DRAM
Kind of interface: parallel
Memory organisation: 1Mx16bitx4
Kind of package: in-tray; tube
Case: TFBGA54
Kind of memory: SDRAM
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Access time: 7.5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory: 64Mb DRAM
Kind of interface: parallel
Memory organisation: 1Mx16bitx4
Kind of package: in-tray; tube
Case: TFBGA54
Kind of memory: SDRAM
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Access time: 7.5ns
товар відсутній
| IS42VM16400M-75BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory: 64Mb DRAM
Kind of interface: parallel
Memory organisation: 1Mx16bitx4
Kind of package: reel; tape
Case: TFBGA54
Kind of memory: SDRAM
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Access time: 7.5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory: 64Mb DRAM
Kind of interface: parallel
Memory organisation: 1Mx16bitx4
Kind of package: reel; tape
Case: TFBGA54
Kind of memory: SDRAM
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Access time: 7.5ns
товар відсутній
| IS42VM16800H-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 128Mb DRAM
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 128Mb DRAM
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
товар відсутній
| IS42VM16800H-75BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 133MHz; 7.5ns; TFBGA54; -40÷85°C
Supply voltage: 1.7...1.95V DC
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 128Mb
Kind of interface: parallel
Memory organisation: 2Mx16bitx4
Case: TFBGA54
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 133MHz; 7.5ns; TFBGA54; -40÷85°C
Supply voltage: 1.7...1.95V DC
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 128Mb
Kind of interface: parallel
Memory organisation: 2Mx16bitx4
Case: TFBGA54
Mounting: SMD
товар відсутній
| IS42VM16800H-75BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 133MHz; 7.5ns; TFBGA54; -40÷85°C
Supply voltage: 1.7...1.95V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 128Mb
Kind of interface: parallel
Memory organisation: 2Mx16bitx4
Case: TFBGA54
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 133MHz; 7.5ns; TFBGA54; -40÷85°C
Supply voltage: 1.7...1.95V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 128Mb
Kind of interface: parallel
Memory organisation: 2Mx16bitx4
Case: TFBGA54
Mounting: SMD
товар відсутній
| IS42VM32160E-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bitx4; 166MHz; 6ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bitx4; 166MHz; 6ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS42VM32160E-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bitx4; 166MHz; 6ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bitx4; 166MHz; 6ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS42VM32160E-75BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bitx4; 133MHz; 7.5ns; TFBGA90; -40÷85°C
Supply voltage: 1.7...1.95V DC
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 512Mb
Kind of interface: parallel
Memory organisation: 4Mx32bitx4
Case: TFBGA90
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bitx4; 133MHz; 7.5ns; TFBGA90; -40÷85°C
Supply voltage: 1.7...1.95V DC
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of memory: SDRAM
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Clock frequency: 133MHz
Memory capacity: 512Mb
Kind of interface: parallel
Memory organisation: 4Mx32bitx4
Case: TFBGA90
Mounting: SMD
товар відсутній
| IS42VM32160E-75BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bitx4; 133MHz; 7.5ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 133MHz
Access time: 7.5ns
Case: TFBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bitx4; 133MHz; 7.5ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 133MHz
Access time: 7.5ns
Case: TFBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS42VM32200M-75BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 133MHz; 7.5ns; TFBGA90
Supply voltage: 1.7...1.95V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 64Mb DRAM
Case: TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx32bitx4
Access time: 7.5ns
Clock frequency: 133MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 133MHz; 7.5ns; TFBGA90
Supply voltage: 1.7...1.95V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 64Mb DRAM
Case: TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx32bitx4
Access time: 7.5ns
Clock frequency: 133MHz
товар відсутній
| IS42VM32200M-75BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 133MHz; 7.5ns; TFBGA90
Supply voltage: 1.7...1.95V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 64Mb DRAM
Case: TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx32bitx4
Access time: 7.5ns
Clock frequency: 133MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 133MHz; 7.5ns; TFBGA90
Supply voltage: 1.7...1.95V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 64Mb DRAM
Case: TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx32bitx4
Access time: 7.5ns
Clock frequency: 133MHz
товар відсутній
| IS42VM32400H-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Clock frequency: 166MHz
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Kind of package: in-tray; tube
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Clock frequency: 166MHz
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Kind of package: in-tray; tube
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
товар відсутній
| IS42VM32400H-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Clock frequency: 166MHz
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Kind of package: reel; tape
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Clock frequency: 166MHz
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Kind of package: reel; tape
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
товар відсутній
| IS42VM32400H-75BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Clock frequency: 133MHz
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Kind of package: in-tray; tube
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Clock frequency: 133MHz
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Kind of package: in-tray; tube
Case: TFBGA90
Kind of memory: SDRAM
Mounting: SMD
Access time: 7.5ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
товар відсутній