Технічний опис IS42SM16160K-6BLI-TR ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 4Mx16bitx4; 166MHz; 6ns; TFBGA54; -40÷85°C, Type of integrated circuit: DRAM memory, Kind of memory: SDRAM, Memory organisation: 4Mx16bitx4, Clock frequency: 166MHz, Access time: 6ns, Case: TFBGA54, Memory capacity: 256Mb, Mounting: SMD, Operating temperature: -40...85°C, Kind of interface: parallel, Kind of package: reel; tape, Supply voltage: 2.7...3.6V DC.
Інші пропозиції IS42SM16160K-6BLI-TR
| Фото | Назва | Виробник | Інформація |
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| IS42SM16160K-6BLI-TR | Виробник : ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 4Mx16bitx4; 166MHz; 6ns; TFBGA54; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.7...3.6V DC |
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%20Renders/706;54TFBGA-1.2-8x8;;54.jpg "IS42SM16160K-6BLI-TR") |
IS42SM16160K-6BLI-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 256MBIT PARALLEL 54TFBGA |
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IS42SM16160K-6BLI-TR | Виробник : ISSI |
DRAM 256M, 3.3V, Mobile SDRAM, 16Mx16, 166Mhz, 54 ball BGA (8mmx8mm) RoHS, IT, T&R |
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| IS42SM16160K-6BLI-TR | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bitx4; 166MHz; 6ns; TFBGA54; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.7...3.6V DC |
товар відсутній |