Фото | Назва | Виробник | Інформація |
Доступність |
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IS25LP256E-RMLE-TY | ISSI |
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IS25LP032D-JMLE-TY | ISSI |
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IS25WP128-JGLA3 | ISSI |
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IS25WP128-JMLE | ISSI |
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IS25WP128-JKLE-TR | ISSI |
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IS25WP128-JKLA3 | ISSI |
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IS25WP128-JGLA3-TR | ISSI |
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IS25WP128-JHLE | ISSI |
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IS25WP128-RGLE | ISSI |
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IS25WP128-RHLA3 | ISSI |
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IS25WP128-RHLE | ISSI |
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IS25WP128-RHLE-TR | ISSI |
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IS25WP128-QBLE | ISSI |
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IS25WP128-JKLE | ISSI |
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IS25WP128-JMLE-TR | ISSI |
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IS42VM16100G-75TLI | ISSI |
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IS46QR16256B-083RBLA2-TR | ISSI |
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IS46TR16256ECL-125LB2LA2 | ISSI |
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IS46TR16640CL-125JBLA2-TR | ISSI |
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IS43TR82560CL-125KBL | ISSI |
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IS43TR16640CL-125JBL-TR | ISSI |
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IS46TR16640CL-125JBLA1-TR | ISSI |
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IS46TR16256ECL-125LB2LA25 | ISSI | IS46TR16256ECL-125LB2LA25 |
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IS46TR16128CL-125KBLA1-TR | ISSI |
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IS46TR16128CL-125KBLA2 | ISSI |
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IS46TR16128CL-125KBLA2-TR | ISSI |
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IS43LD32128C-25BPLI | ISSI | LPDDR2, 4Gb, 128Mbx32, 168 ball, BGA, -40°C - +85°C |
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IS62WVS1288FBLL-20DLI | ISSI |
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IS25WP01G-RILE-TR | ISSI |
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IS22TF32G-JQLA1-TR | ISSI |
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IS66WVS4M8BLL-104TLI-TR | ISSI |
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IS61C1024AL | ISSI | 1Mb,High-Speed,Async,128K x 8,12ns,5v, |
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IS21EF16G-JCLI | ISSI |
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IS22TF16G-JQLA1-TR | ISSI |
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IS22TF16G-JCLA1-TR | ISSI | 16GB, 153 Ball FBGA, 3.3V, RoHS, T&R, Auto Grade (-40+85C) |
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IS22EF16G-JCLA2 | ISSI |
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IS21EF16G-BCLI | ISSI | 16GB, 153 Ball FBGA, 3.3V, Boot Partition Size, RoHS |
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IS22EF16G-JCLA2-TR | ISSI | 16GB, 153 Ball FBGA, 3.3V, RoHS, T&R, Auto Grade (-40C+105C) |
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IS21TF128G-JQLI-TR | ISSI |
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IS21TF128G-JCLI | ISSI |
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IS21TF128G-JCLI-TR | ISSI |
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IS22TF128G-BCLA2-TR | ISSI | IS22TF128G-BCLA2-TR |
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IS22TF128G-JQLA1-TR | ISSI |
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IS22TF128G-JCLA2 | ISSI |
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IS42S16400J-5BL | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TFBGA54; 0÷70°C Mounting: SMD Operating temperature: 0...70°C Case: TFBGA54 Kind of package: in-tray; tube Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx16bitx4 Access time: 5ns Clock frequency: 200MHz Kind of interface: parallel Memory: 64Mb DRAM Supply voltage: 3...3.6V DC |
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IS42S16400J-5TL-TR | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
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IS42S16400J-6BL | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
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IS42S16400J-6BL-TR | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
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IS42S16400J-6BLI | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
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IS42S16400J-6BLI-TR | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
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IS42S16400J-6TL-TR | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
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IS42S16400J-6TLI-TR | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
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IS42S16400J-7B2LI | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
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IS42S16400J-7B2LI-TR | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
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IS42S16400J-7BL | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
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IS42S16400J-7BL-TR | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
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IS42S16400J-7BLI | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
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IS61LPS204836B-166TQLI | ISSI |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 3.8ns; TQFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Access time: 3.8ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V |
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IS61VPS204836B-250B3L | ISSI |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Access time: 2.8ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube Operating voltage: 2.5V |
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IS61VPS204836B-250B3LI | ISSI |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Access time: 2.8ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.5V |
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IS25LP256E-RMLE-TY |
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Виробник: ISSI
256Mb QPI/QSPI, 16-pin SOP 300Mil, RoHS, dedicated reset pin, Tray
256Mb QPI/QSPI, 16-pin SOP 300Mil, RoHS, dedicated reset pin, Tray
товар відсутній
IS25WP128-JGLA3 |
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Виробник: ISSI
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 128M-bit 16M x 8 8ns Automotive 24-Pin TFBGA
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 128M-bit 16M x 8 8ns Automotive 24-Pin TFBGA
товар відсутній
IS25WP128-JMLE |
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Виробник: ISSI
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 128M-bit 16M x 8 8ns 16-Pin SOIC W
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 128M-bit 16M x 8 8ns 16-Pin SOIC W
товар відсутній
IS25WP128-JKLA3 |
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Виробник: ISSI
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 128M-bit 16M x 8 8ns Automotive 8-Pin WSON EP
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 128M-bit 16M x 8 8ns Automotive 8-Pin WSON EP
товар відсутній
IS25WP128-JGLA3-TR |
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Виробник: ISSI
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 128M-bit 16M x 8 8ns Automotive 24-Pin TFBGA
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 128M-bit 16M x 8 8ns Automotive 24-Pin TFBGA
товар відсутній
IS25WP128-RHLA3 |
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Виробник: ISSI
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 128M-bit Automotive 24-Pin TFBGA
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 128M-bit Automotive 24-Pin TFBGA
товар відсутній
IS25WP128-RHLE |
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Виробник: ISSI
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 128M-bit Automotive AEC-Q100 24-Pin TFBGA
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 128M-bit Automotive AEC-Q100 24-Pin TFBGA
товар відсутній
IS25WP128-RHLE-TR |
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Виробник: ISSI
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 128M-bit 24-Pin TFBGA T/R
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 128M-bit 24-Pin TFBGA T/R
товар відсутній
IS25WP128-JKLE |
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Виробник: ISSI
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 128M-bit 16M x 8 8ns 8-Pin WSON EP
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 128M-bit 16M x 8 8ns 8-Pin WSON EP
товар відсутній
IS46QR16256B-083RBLA2-TR |
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Виробник: ISSI
DRAM Chip DDR4 SDRAM 4Gbit 256Mx16 1.2V Automotive AEC-Q100 96-Pin TWBGA
DRAM Chip DDR4 SDRAM 4Gbit 256Mx16 1.2V Automotive AEC-Q100 96-Pin TWBGA
товар відсутній
IS46TR16256ECL-125LB2LA2 |
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Виробник: ISSI
Automotive (Tc: -40 to +105C), 4G, 1.35V, DDR3L w/ ECC,256Mx16, 1600MT/s @ 12-11-11, 96 ball BGA (10mm x14mm) RoHS
Automotive (Tc: -40 to +105C), 4G, 1.35V, DDR3L w/ ECC,256Mx16, 1600MT/s @ 12-11-11, 96 ball BGA (10mm x14mm) RoHS
товар відсутній
IS46TR16640CL-125JBLA2-TR |
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Виробник: ISSI
DRAM Chip DDR3L SDRAM 1Gbit 64Mx16 1.35V Automotive AEC-Q100 96-Pin TW-BGA
DRAM Chip DDR3L SDRAM 1Gbit 64Mx16 1.35V Automotive AEC-Q100 96-Pin TW-BGA
товар відсутній
IS43TR82560CL-125KBL |
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Виробник: ISSI
DRAM Chip DDR3L SDRAM 2Gbit 256Mx8 1.35V 78-Pin TW-BGA
DRAM Chip DDR3L SDRAM 2Gbit 256Mx8 1.35V 78-Pin TW-BGA
товар відсутній
IS43TR16640CL-125JBL-TR |
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Виробник: ISSI
DRAM Chip DDR3L SDRAM 1Gbit 64Mx16 1.35V 96-Pin TW-BGA
DRAM Chip DDR3L SDRAM 1Gbit 64Mx16 1.35V 96-Pin TW-BGA
товар відсутній
IS46TR16128CL-125KBLA1-TR |
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Виробник: ISSI
DRAM Chip DDR3L SDRAM 2Gbit 128Mx16 1.35V Automotive 96-Pin TW-BGA T/R
DRAM Chip DDR3L SDRAM 2Gbit 128Mx16 1.35V Automotive 96-Pin TW-BGA T/R
товар відсутній
IS46TR16128CL-125KBLA2 |
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Виробник: ISSI
DRAM Chip DDR3L SDRAM 2Gbit 128Mx16 1.35V Automotive 96-Pin TW-BGA
DRAM Chip DDR3L SDRAM 2Gbit 128Mx16 1.35V Automotive 96-Pin TW-BGA
товар відсутній
IS46TR16128CL-125KBLA2-TR |
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Виробник: ISSI
DRAM Chip DDR3L SDRAM 2Gbit 128Mx16 1.35V Automotive 96-Pin TW-BGA T/R
DRAM Chip DDR3L SDRAM 2Gbit 128Mx16 1.35V Automotive 96-Pin TW-BGA T/R
товар відсутній
IS43LD32128C-25BPLI |
Виробник: ISSI
LPDDR2, 4Gb, 128Mbx32, 168 ball, BGA, -40°C - +85°C
LPDDR2, 4Gb, 128Mbx32, 168 ball, BGA, -40°C - +85°C
товар відсутній
IS25WP01G-RILE-TR |
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Виробник: ISSI
Nor Flash Serial (SPI Dual SPI Quad SPI) 1.8V 1G-bit 128M X 8 11ns 24-Pin LFBGA
Nor Flash Serial (SPI Dual SPI Quad SPI) 1.8V 1G-bit 128M X 8 11ns 24-Pin LFBGA
товар відсутній
IS22TF32G-JQLA1-TR |
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Виробник: ISSI
32GB, 100 Ball FBGA, 3.3V, RoHS, T&R, Auto Grade (-40+85C)
32GB, 100 Ball FBGA, 3.3V, RoHS, T&R, Auto Grade (-40+85C)
товар відсутній
IS22TF16G-JCLA1-TR |
Виробник: ISSI
16GB, 153 Ball FBGA, 3.3V, RoHS, T&R, Auto Grade (-40+85C)
16GB, 153 Ball FBGA, 3.3V, RoHS, T&R, Auto Grade (-40+85C)
товар відсутній
IS22EF16G-JCLA2 |
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Виробник: ISSI
16GB, 153 Ball FBGA, 3.3V, RoHS, Auto Grade (-40C+105C)
16GB, 153 Ball FBGA, 3.3V, RoHS, Auto Grade (-40C+105C)
товар відсутній
IS22EF16G-JCLA2-TR |
Виробник: ISSI
16GB, 153 Ball FBGA, 3.3V, RoHS, T&R, Auto Grade (-40C+105C)
16GB, 153 Ball FBGA, 3.3V, RoHS, T&R, Auto Grade (-40C+105C)
товар відсутній
IS21TF128G-JCLI-TR |
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Виробник: ISSI
Managed NAND Flash Serial e-mmC 3.3V 1T-bit 128G X 8
Managed NAND Flash Serial e-mmC 3.3V 1T-bit 128G X 8
товар відсутній
IS22TF128G-JQLA1-TR |
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Виробник: ISSI
128GB, 100 Ball FBGA, 3.3V, RoHS, T&R, Auto Grade (-40+85C)
128GB, 100 Ball FBGA, 3.3V, RoHS, T&R, Auto Grade (-40+85C)
товар відсутній
IS22TF128G-JCLA2 |
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Виробник: ISSI
Managed NAND Flash Serial e-MMC 3.3V 1T-bit 128G x 8 Automotive 153-Pin VFBGA
Managed NAND Flash Serial e-MMC 3.3V 1T-bit 128G x 8 Automotive 153-Pin VFBGA
товар відсутній
IS42S16400J-5BL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TFBGA54; 0÷70°C
Mounting: SMD
Operating temperature: 0...70°C
Case: TFBGA54
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 64Mb DRAM
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TFBGA54; 0÷70°C
Mounting: SMD
Operating temperature: 0...70°C
Case: TFBGA54
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 64Mb DRAM
Supply voltage: 3...3.6V DC
товар відсутній
IS42S16400J-5TL-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
IS42S16400J-6BL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
IS42S16400J-6BL-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
IS42S16400J-6BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
IS42S16400J-6BLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
IS42S16400J-6TL-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
IS42S16400J-6TLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
IS42S16400J-7B2LI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
IS42S16400J-7B2LI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
IS42S16400J-7BL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
IS42S16400J-7BL-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
IS42S16400J-7BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
IS61LPS204836B-166TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 3.8ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Access time: 3.8ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 3.8ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Access time: 3.8ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
товар відсутній
IS61VPS204836B-250B3L |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 2.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 2.5V
товар відсутній
IS61VPS204836B-250B3LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5V
товар відсутній