Технічний опис IS43R16320F-6BLI-TR ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60, Type of integrated circuit: DRAM memory, Kind of memory: DDR1; SDRAM, Memory: 512Mb DRAM, Memory organisation: 8Mx16bitx4, Clock frequency: 166MHz, Access time: 6ns, Case: TWBGA60, Mounting: SMD, Operating temperature: -40...85°C, Kind of interface: parallel, Kind of package: reel; tape, Supply voltage: 2.5V DC, кількість в упаковці: 2500 шт.
Інші пропозиції IS43R16320F-6BLI-TR
| Фото | Назва | Виробник | Інформація |
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| IS43R16320F-6BLI-TR | Виробник : ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TWBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC кількість в упаковці: 2500 шт |
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IS43R16320F-6BLI-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 512MBIT PAR 60TFBGA |
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IS43R16320F-6BLI-TR | Виробник : ISSI |
DRAM 512M 32Mx16 166MHz DDR 2.5V |
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| IS43R16320F-6BLI-TR | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TWBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC |
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