IS43R32160D-5BL ISSI
Виробник: ISSICategory: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bitx4; 200MHz; 5ns; LFBGA144; 0÷70°C; 2.6VDC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: LFBGA144
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.6V DC
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Технічний опис IS43R32160D-5BL ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 4Mx32bitx4; 200MHz; 5ns; LFBGA144; 0÷70°C; 2.6VDC, Type of integrated circuit: DRAM memory, Kind of memory: DDR1; SDRAM, Memory organisation: 4Mx32bitx4, Clock frequency: 200MHz, Access time: 5ns, Case: LFBGA144, Memory capacity: 512Mb, Mounting: SMD, Operating temperature: 0...70°C, Kind of interface: parallel, Kind of package: in-tray; tube, Supply voltage: 2.6V DC.
Інші пропозиції IS43R32160D-5BL
| Фото | Назва | Виробник | Інформація |
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%20Renders/706;-144LFBGA-1.4-12x12;-;-144.jpg "IS43R32160D-5BL") |
IS43R32160D-5BL | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC DDR 512M 200MHZ 144BGA |
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IS43R32160D-5BL | Виробник : ISSI |
DRAM 512Mb, 2.5V, 200MHz 16Mx32 DDR SDRAM |
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| IS43R32160D-5BL | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bitx4; 200MHz; 5ns; LFBGA144; 0÷70°C; 2.6VDC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 4Mx32bitx4 Clock frequency: 200MHz Access time: 5ns Case: LFBGA144 Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.6V DC |
товар відсутній |