Технічний опис IS43R16800E-6TL ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II, Kind of package: in-tray; tube, Kind of memory: DDR1; SDRAM, Memory organisation: 2Mx16bitx4, Access time: 6ns, Clock frequency: 166MHz, Kind of interface: parallel, Memory: 128Mb DRAM, Mounting: SMD, Operating temperature: 0...70°C, Case: TSOP66 II, Supply voltage: 2.5V DC, Type of integrated circuit: DRAM memory, кількість в упаковці: 1 шт.
Інші пропозиції IS43R16800E-6TL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| IS43R16800E-6TL | Виробник : ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II Kind of package: in-tray; tube Kind of memory: DDR1; SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: 0...70°C Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory кількість в упаковці: 1 шт |
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%20Renders/706;66TSOPII-10.16;;66.jpg "IS43R16800E-6TL") |
IS43R16800E-6TL | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC DDR 128M 166MHZ 66TSOP |
товар відсутній |
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| IS43R16800E-6TL | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II Kind of package: in-tray; tube Kind of memory: DDR1; SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: 0...70°C Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory |
товар відсутній |