Технічний опис IS43R86400F-5TLI-TR ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II, Mounting: SMD, Operating temperature: -40...85°C, Kind of interface: parallel, Memory: 512Mb DRAM, Case: TSOP66 II, Supply voltage: 2.5V DC, Type of integrated circuit: DRAM memory, Kind of memory: DDR1; SDRAM, Memory organisation: 16Mx8bitx4, Access time: 5ns, Clock frequency: 200MHz, Kind of package: reel; tape, кількість в упаковці: 1500 шт.
Інші пропозиції IS43R86400F-5TLI-TR
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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| IS43R86400F-5TLI-TR | Виробник : ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 512Mb DRAM Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 16Mx8bitx4 Access time: 5ns Clock frequency: 200MHz Kind of package: reel; tape кількість в упаковці: 1500 шт |
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IS43R86400F-5TLI-TR | Виробник : ISSI |
DRAM 512M 64Mx8 200MHz DDR 2.5V |
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| IS43R86400F-5TLI-TR | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 512Mb DRAM Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 16Mx8bitx4 Access time: 5ns Clock frequency: 200MHz Kind of package: reel; tape |
товар відсутній |