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S29GL01GS11FAIV23 S29GL01GS11FAIV23 Infineon Technologies S29GL-S_PbPkg.pdf Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
товар відсутній
FS10R06VE3BOMA1 FS10R06VE3BOMA1 Infineon Technologies Infineon-FS10R06VE3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b432b87b5933 Description: IGBT MODULE 600V 16A 50W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
18+1260.44 грн
Мінімальне замовлення: 18
FS10R06VE3BOMA1 FS10R06VE3BOMA1 Infineon Technologies Infineon-FS10R06VE3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b432b87b5933 Description: IGBT MODULE 600V 16A 50W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
товар відсутній
CY9AF142LAPMC1-G-MNE2 CY9AF142LAPMC1-G-MNE2 Infineon Technologies cy9a140nb-series-32-bit-arm-cortex-m3-fm3-microcontroller Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1+693.62 грн
10+ 603.1 грн
25+ 575.07 грн
160+ 468.59 грн
320+ 447.53 грн
480+ 408.04 грн
960+ 349.57 грн
IAUAN04S7N008AUMA1 IAUAN04S7N008AUMA1 Infineon Technologies Infineon-IAUAN04S7N008-DataSheet--DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f190fa99f121f Description: IAUAN04S7N008AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 290A (Tj)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 90A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5410 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
IAUAN04S7N008AUMA1 IAUAN04S7N008AUMA1 Infineon Technologies Infineon-IAUAN04S7N008-DataSheet--DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f190fa99f121f Description: IAUAN04S7N008AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 290A (Tj)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 90A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5410 pF @ 20 V
Qualification: AEC-Q101
на замовлення 330 шт:
термін постачання 21-31 дні (днів)
2+232.77 грн
10+ 146.42 грн
25+ 126.07 грн
100+ 96.8 грн
250+ 86.34 грн
Мінімальне замовлення: 2
IAUAN04S7N007AUMA1 IAUAN04S7N007AUMA1 Infineon Technologies Infineon-IAUAN04S7N007-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906bfc9121b Description: IAUAN04S7N007AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 3V @ 73µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
IAUAN04S7N007AUMA1 IAUAN04S7N007AUMA1 Infineon Technologies Infineon-IAUAN04S7N007-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906bfc9121b Description: IAUAN04S7N007AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 3V @ 73µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V
Qualification: AEC-Q101
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
2+257.85 грн
10+ 162.87 грн
25+ 140.59 грн
100+ 108.43 грн
250+ 96.99 грн
500+ 90.02 грн
Мінімальне замовлення: 2
IAUAN04S7N006AUMA1 IAUAN04S7N006AUMA1 Infineon Technologies Description: IAUAN04S7N006AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 410A (Tj)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
IAUAN04S7N006AUMA1 IAUAN04S7N006AUMA1 Infineon Technologies Description: IAUAN04S7N006AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 410A (Tj)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
IAUAN04S7N005AUMA1 IAUAN04S7N005AUMA1 Infineon Technologies Infineon-IAUAN04S7N005-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f19068b361215 Description: IAUAN04S7N005AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 455A (Tj)
Rds On (Max) @ Id, Vgs: 0.51mOhm @ 100A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 3V @ 110µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
IAUAN04S7N005AUMA1 IAUAN04S7N005AUMA1 Infineon Technologies Infineon-IAUAN04S7N005-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f19068b361215 Description: IAUAN04S7N005AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 455A (Tj)
Rds On (Max) @ Id, Vgs: 0.51mOhm @ 100A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 3V @ 110µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 20 V
Qualification: AEC-Q101
на замовлення 492 шт:
термін постачання 21-31 дні (днів)
1+326.04 грн
10+ 208.68 грн
25+ 181.19 грн
100+ 141.13 грн
250+ 127.09 грн
IAUAN04S7N004AUMA1 IAUAN04S7N004AUMA1 Infineon Technologies Description: IAUAN04S7N004AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta), 570A (Tj)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3V @ 150µA
Supplier Device Package: PG-HSOF-5-5
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
IAUAN04S7N004AUMA1 IAUAN04S7N004AUMA1 Infineon Technologies Description: IAUAN04S7N004AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta), 570A (Tj)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3V @ 150µA
Supplier Device Package: PG-HSOF-5-5
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
KITA2GTC3975VTRBSTOBO1 KITA2GTC3975VTRBSTOBO1 Infineon Technologies Infineon-TriBoardManual_TC3X71-UserManual-v02_01-EN.pdf?fileId=5546d462696dbf1201697775dd0b58be Description: AURIX TC397 5V TRB SOCKET BRD
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC397
Platform: AURIX TC397 5V TRB Socket
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+139385.23 грн
FS100R17KE3BOSA1 FS100R17KE3BOSA1 Infineon Technologies Infineon-FS100R17KE3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b42fe9a64e44 Description: IGBT MOD 1700V 145A 555W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 555 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
товар відсутній
IFS200B12N3E4B37BPSA1 Infineon Technologies Infineon-IFS200B12N3E4_B37-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a3329b86f6825 Description: LOW POWER ECONO AG-ECONO3B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
товар відсутній
IRGP4063-EPBF IRGP4063-EPBF Infineon Technologies IRSDS11858-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 96A 330W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 95 nC
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
товар відсутній
AUIRFP4004 AUIRFP4004 Infineon Technologies auirfp4004.pdf?fileId=5546d462533600a4015355b1b7a51450 Description: MOSFET N-CH 40V 195A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V
товар відсутній
BTS282ZE3230AKSA2 BTS282ZE3230AKSA2 Infineon Technologies BTS282Z_DS_13.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a3043405f2978014071d29660203c&ack=t Description: MOSFET N-CH 49V 80A TO220-7
Packaging: Bulk
Package / Case: TO-220-7
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: PG-TO220-7-12
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
на замовлення 395 шт:
термін постачання 21-31 дні (днів)
73+290.03 грн
Мінімальне замовлення: 73
S25FL128LAGBHM023 S25FL128LAGBHM023 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
CY8CTST200A-48PVXI CY8CTST200A-48PVXI Infineon Technologies Description: IC MCU PSOC SINGLE-TOUCH 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 48-SSOP
Number of I/O: 38
DigiKey Programmable: Not Verified
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
1+426.36 грн
10+ 368.46 грн
30+ 348.33 грн
120+ 283.32 грн
IR3826AMTRPBFAUMA1 IR3826AMTRPBFAUMA1 Infineon Technologies Infineon-IR3826AMTRPBF-DataSheet-v02_02-EN.pdf?fileId=5546d46266a498f50166ccf299297348 Description: IC REG BUCK ADJ 16A 22IQFN
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 16A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-22-1
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.62V
Voltage - Input (Min): 1V
Voltage - Output (Min/Fixed): 0.6V
товар відсутній
IPA60R330P6XKSA1 IPA60R330P6XKSA1 Infineon Technologies IPx60R330P6.pdf Description: MOSFET N-CH 600V 12A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
товар відсутній
ICE5QR1070AZXKLA1 ICE5QR1070AZXKLA1 Infineon Technologies Infineon-ICE5QRxxxxAx-DS-v02_10-EN.pdf?fileId=5546d46259d9a4bf015a4af1eaab111c Description: AC-DC INTEGRATED POWER STAGE - C
Packaging: Bulk
на замовлення 1956 шт:
термін постачання 21-31 дні (днів)
273+79.59 грн
Мінімальне замовлення: 273
ICE5QR2270AZXKLA1 ICE5QR2270AZXKLA1 Infineon Technologies Infineon-ICE5QRxxxxAx-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a4af1eaab111c Description: ICE5QR2270 - QUASI RESONANT COOL
Packaging: Bulk
на замовлення 3935 шт:
термін постачання 21-31 дні (днів)
228+95.51 грн
Мінімальне замовлення: 228
REF5QR0680BG40W1TOBO1 REF5QR0680BG40W1TOBO1 Infineon Technologies Description: REF5QR0680BG40W1TOBO1
Packaging: Box
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 3.1A, 200mA, 150mA
Regulator Topology: Buck, Resonant
Board Type: Fully Populated
Utilized IC / Part: ICE5QR0680BG
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 3, Isolated
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+7958.98 грн
IRS21064PBF IRS21064PBF Infineon Technologies INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
116+182.33 грн
Мінімальне замовлення: 116
IRS21064PBF IRS21064PBF Infineon Technologies INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
товар відсутній
TLE49SRS8XUMA1 Infineon Technologies Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Analog, PWM, SENT
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: 200Hz ~ 3kHz
Technology: Hall Effect
Resolution: 16 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 130mA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
TLE49SRS8XUMA1 Infineon Technologies Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Analog, PWM, SENT
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: 200Hz ~ 3kHz
Technology: Hall Effect
Resolution: 16 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 130mA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
1+455.36 грн
10+ 351.32 грн
25+ 324.98 грн
100+ 263.77 грн
500+ 247.28 грн
1000+ 230.8 грн
CYBL10563-56LQXIT CYBL10563-56LQXIT Infineon Technologies CYBL10X6X_Family_Datasheet_RevL_3-23-17.pdf Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 8kB ROM, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 1Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
товар відсутній
AUIRLR3410TRL AUIRLR3410TRL Infineon Technologies IRSD-S-A0000226357-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 17A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4925 шт:
термін постачання 21-31 дні (днів)
249+88.43 грн
Мінімальне замовлення: 249
SPIDERPLUSMBEVALTOBO1 Infineon Technologies Description: Eval
Packaging: Bulk
Function: System Basis Chip (SBC)
Type: Interface
Supplied Contents: Board(s)
Primary Attributes: 5V ~ 28V Supply
Embedded: No
товар відсутній
S29GL256S10FHB020 S29GL256S10FHB020 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
товар відсутній
CY8C20636A-24LQXI CY8C20636A-24LQXI Infineon Technologies Infineon-CY8C20XX6A_S_1.8_V_Programmable_CapSense_Controller_with_SmartSense_Auto-tuning_1-33_Buttons_0-6_Sliders-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc6dc04671&utm_source=cypress&utm_medium=referral&utm_camp Description: IC CAPSENCE 8K FLASH 48QFN
Packaging: Bulk
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 155 шт:
термін постачання 21-31 дні (днів)
82+266.26 грн
Мінімальне замовлення: 82
ISZ810P06LMATMA1 ISZ810P06LMATMA1 Infineon Technologies Infineon-ISZ810P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185aa001d6936ff Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
товар відсутній
ISZ810P06LMATMA1 ISZ810P06LMATMA1 Infineon Technologies Infineon-ISZ810P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185aa001d6936ff Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
на замовлення 4721 шт:
термін постачання 21-31 дні (днів)
5+69.75 грн
10+ 54.49 грн
100+ 42.37 грн
500+ 33.7 грн
1000+ 27.45 грн
2000+ 25.85 грн
Мінімальне замовлення: 5
IRGPS40B120UPBF IRGPS40B120UPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT 1200V 80A 595W SUPER247
Packaging: Bag
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.71V @ 15V, 50A
Supplier Device Package: SUPER-247™ (TO-274AA)
IGBT Type: NPT
Switching Energy: 1.4mJ (on), 1.65mJ (off)
Test Condition: 600V, 40A, 4.7Ohm, 15V
Gate Charge: 340 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 595 W
товар відсутній
MB95F572KPF-G-SNE2 MB95F572KPF-G-SNE2 Infineon Technologies MB95560H_70H_80H_Series_RevA_Mar29_2016.pdf Description: IC MCU 8BIT 8KB FLASH 8SOP
Packaging: Bulk
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 240 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 2x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 8-SOP
Number of I/O: 5
DigiKey Programmable: Not Verified
товар відсутній
MB95F574KNPF-G-SNE2 MB95F574KNPF-G-SNE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 20KB FLASH 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 2x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 8-SOP
Number of I/O: 5
DigiKey Programmable: Not Verified
товар відсутній
MB95F774EPMC1-G-SNE2 MB95F774EPMC1-G-SNE2 Infineon Technologies 5047 Description: IC MCU 8BIT 20KB FLASH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 59
DigiKey Programmable: Not Verified
товар відсутній
MB95F774EPMC1-G-SNE2 MB95F774EPMC1-G-SNE2 Infineon Technologies 5047 Description: IC MCU 8BIT 20KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 59
DigiKey Programmable: Not Verified
на замовлення 954 шт:
термін постачання 21-31 дні (днів)
5+76.81 грн
Мінімальне замовлення: 5
MB95F334KP-G-SH-SNE2 MB95F334KP-G-SH-SNE2 Infineon Technologies MB95F332-34K_H_RevA_Apr4_2016.pdf Description: IC MCU 8BIT 20KB FLASH 32SDIP
Packaging: Bulk
Package / Case: 32-SDIP (0.400", 10.16mm)
Mounting Type: Through Hole
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1008 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-SDIP
Number of I/O: 29
DigiKey Programmable: Not Verified
товар відсутній
MB95F334KP-G-SH-SNE2 MB95F334KP-G-SH-SNE2 Infineon Technologies MB95F332-34K_H_RevA_Apr4_2016.pdf Description: IC MCU 8BIT 20KB FLASH 32SDIP
Packaging: Tube
Package / Case: 32-SDIP (0.400", 10.16mm)
Mounting Type: Through Hole
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1008 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-SDIP
Number of I/O: 29
DigiKey Programmable: Not Verified
на замовлення 524 шт:
термін постачання 21-31 дні (днів)
4+79.94 грн
Мінімальне замовлення: 4
MB9BF366RPMC-G-JNE2 MB9BF366RPMC-G-JNE2 Infineon Technologies download Description: IC MCU 32BIT 544KB FLASH 120LQFP
Packaging: Bulk
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
45+483.33 грн
Мінімальне замовлення: 45
TLE8201RAUMA1 TLE8201RAUMA1 Infineon Technologies TLE_8201R.pdf Description: IC MOTOR DRIVER 4.75V-5.5V 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6), High Side (5)
Voltage - Supply: 4.75V ~ 5.5V
Technology: DMOS
Voltage - Load: 5V ~ 40V
Supplier Device Package: PG-DSO-36-27
Motor Type - AC, DC: Brushed DC
Grade: Automotive
товар відсутній
CY7C1315KV18-250BZXC CY7C1315KV18-250BZXC Infineon Technologies download Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 852 шт:
термін постачання 21-31 дні (днів)
1+1926.46 грн
CY62136EV30LL-45ZSXIT CY62136EV30LL-45ZSXIT Infineon Technologies Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239 Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+227.55 грн
Мінімальне замовлення: 1000
CY62136EV30LL-45ZSXIT CY62136EV30LL-45ZSXIT Infineon Technologies Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239 Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+315.07 грн
10+ 275.25 грн
25+ 269.22 грн
50+ 251.3 грн
100+ 225.32 грн
250+ 224.51 грн
500+ 212.76 грн
CY62136EV30LL-45ZSXIT CY62136EV30LL-45ZSXIT Infineon Technologies Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239 Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
CY62148GN30-45ZSXI CY62148GN30-45ZSXI Infineon Technologies Infineon-CY62148GN_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed80b9e5996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
товар відсутній
CY7C1361KVE33-133AXM CY7C1361KVE33-133AXM Infineon Technologies 5047 Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
товар відсутній
IRG7PH35U-EP IRG7PH35U-EP Infineon Technologies IRG7PH35UPBF%2CU-EP.pdf Description: IGBT TRENCH 1200V 55A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 1.06mJ (on), 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 210 W
товар відсутній
DD700N22KXPSA1 Infineon Technologies Infineon-DD700N22K-DS-v03_02-EN.pdf?fileId=5546d461464245d30146668db98460e3 Description: DIODE MOD 2200V 700A BGPB60E2A-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 700A
Supplier Device Package: BG-PB60E2A-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 2200 A
Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
товар відсутній
IRAMS06UP60A-2 Infineon Technologies IRSDS06928-1.pdf?t.download=true&u=5oefqw Description: IRAMS06 - INTELLIGENT POWER MODU
Packaging: Bulk
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 6 A
Voltage: 600 V
на замовлення 1668 шт:
термін постачання 21-31 дні (днів)
20+1104.15 грн
Мінімальне замовлення: 20
IMBG120R022M2HXTMA1 IMBG120R022M2HXTMA1 Infineon Technologies Infineon-IMBG120R022M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d21fff7e920ca Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 21.6mOhm @ 32.1A, 18V
Power Dissipation (Max): 385W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 800 V
товар відсутній
IMBG120R022M2HXTMA1 IMBG120R022M2HXTMA1 Infineon Technologies Infineon-IMBG120R022M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d21fff7e920ca Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 21.6mOhm @ 32.1A, 18V
Power Dissipation (Max): 385W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 800 V
на замовлення 815 шт:
термін постачання 21-31 дні (днів)
1+1511.85 грн
10+ 1046.5 грн
100+ 832.01 грн
CYAT817AZA88-5B002 CYAT817AZA88-5B002 Infineon Technologies Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
CY8C4024AZI-S403T CY8C4024AZI-S403T Infineon Technologies Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Description: IC MCU 32BIT 16KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
товар відсутній
S29GL01GS11FAIV23 S29GL-S_PbPkg.pdf
S29GL01GS11FAIV23
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
товар відсутній
FS10R06VE3BOMA1 Infineon-FS10R06VE3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b432b87b5933
FS10R06VE3BOMA1
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 16A 50W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
18+1260.44 грн
Мінімальне замовлення: 18
FS10R06VE3BOMA1 Infineon-FS10R06VE3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b432b87b5933
FS10R06VE3BOMA1
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 16A 50W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
товар відсутній
CY9AF142LAPMC1-G-MNE2 cy9a140nb-series-32-bit-arm-cortex-m3-fm3-microcontroller
CY9AF142LAPMC1-G-MNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+693.62 грн
10+ 603.1 грн
25+ 575.07 грн
160+ 468.59 грн
320+ 447.53 грн
480+ 408.04 грн
960+ 349.57 грн
IAUAN04S7N008AUMA1 Infineon-IAUAN04S7N008-DataSheet--DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f190fa99f121f
IAUAN04S7N008AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N008AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 290A (Tj)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 90A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5410 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
IAUAN04S7N008AUMA1 Infineon-IAUAN04S7N008-DataSheet--DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f190fa99f121f
IAUAN04S7N008AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N008AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 290A (Tj)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 90A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5410 pF @ 20 V
Qualification: AEC-Q101
на замовлення 330 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+232.77 грн
10+ 146.42 грн
25+ 126.07 грн
100+ 96.8 грн
250+ 86.34 грн
Мінімальне замовлення: 2
IAUAN04S7N007AUMA1 Infineon-IAUAN04S7N007-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906bfc9121b
IAUAN04S7N007AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N007AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 3V @ 73µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
IAUAN04S7N007AUMA1 Infineon-IAUAN04S7N007-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906bfc9121b
IAUAN04S7N007AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N007AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 3V @ 73µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V
Qualification: AEC-Q101
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+257.85 грн
10+ 162.87 грн
25+ 140.59 грн
100+ 108.43 грн
250+ 96.99 грн
500+ 90.02 грн
Мінімальне замовлення: 2
IAUAN04S7N006AUMA1
IAUAN04S7N006AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N006AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 410A (Tj)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
IAUAN04S7N006AUMA1
IAUAN04S7N006AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N006AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 410A (Tj)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
IAUAN04S7N005AUMA1 Infineon-IAUAN04S7N005-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f19068b361215
IAUAN04S7N005AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N005AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 455A (Tj)
Rds On (Max) @ Id, Vgs: 0.51mOhm @ 100A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 3V @ 110µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
IAUAN04S7N005AUMA1 Infineon-IAUAN04S7N005-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f19068b361215
IAUAN04S7N005AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N005AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 455A (Tj)
Rds On (Max) @ Id, Vgs: 0.51mOhm @ 100A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 3V @ 110µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 20 V
Qualification: AEC-Q101
на замовлення 492 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+326.04 грн
10+ 208.68 грн
25+ 181.19 грн
100+ 141.13 грн
250+ 127.09 грн
IAUAN04S7N004AUMA1
IAUAN04S7N004AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N004AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta), 570A (Tj)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3V @ 150µA
Supplier Device Package: PG-HSOF-5-5
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
IAUAN04S7N004AUMA1
IAUAN04S7N004AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N004AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta), 570A (Tj)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3V @ 150µA
Supplier Device Package: PG-HSOF-5-5
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
KITA2GTC3975VTRBSTOBO1 Infineon-TriBoardManual_TC3X71-UserManual-v02_01-EN.pdf?fileId=5546d462696dbf1201697775dd0b58be
KITA2GTC3975VTRBSTOBO1
Виробник: Infineon Technologies
Description: AURIX TC397 5V TRB SOCKET BRD
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC397
Platform: AURIX TC397 5V TRB Socket
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+139385.23 грн
FS100R17KE3BOSA1 Infineon-FS100R17KE3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b42fe9a64e44
FS100R17KE3BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 145A 555W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 555 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
товар відсутній
IFS200B12N3E4B37BPSA1 Infineon-IFS200B12N3E4_B37-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a3329b86f6825
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
товар відсутній
IRGP4063-EPBF IRSDS11858-1.pdf?t.download=true&u=5oefqw
IRGP4063-EPBF
Виробник: Infineon Technologies
Description: IGBT 600V 96A 330W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 95 nC
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
товар відсутній
AUIRFP4004 auirfp4004.pdf?fileId=5546d462533600a4015355b1b7a51450
AUIRFP4004
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V
товар відсутній
BTS282ZE3230AKSA2 BTS282Z_DS_13.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a3043405f2978014071d29660203c&ack=t
BTS282ZE3230AKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 49V 80A TO220-7
Packaging: Bulk
Package / Case: TO-220-7
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: PG-TO220-7-12
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
на замовлення 395 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
73+290.03 грн
Мінімальне замовлення: 73
S25FL128LAGBHM023 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL128LAGBHM023
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
CY8CTST200A-48PVXI
CY8CTST200A-48PVXI
Виробник: Infineon Technologies
Description: IC MCU PSOC SINGLE-TOUCH 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 48-SSOP
Number of I/O: 38
DigiKey Programmable: Not Verified
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+426.36 грн
10+ 368.46 грн
30+ 348.33 грн
120+ 283.32 грн
IR3826AMTRPBFAUMA1 Infineon-IR3826AMTRPBF-DataSheet-v02_02-EN.pdf?fileId=5546d46266a498f50166ccf299297348
IR3826AMTRPBFAUMA1
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 16A 22IQFN
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 16A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-22-1
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.62V
Voltage - Input (Min): 1V
Voltage - Output (Min/Fixed): 0.6V
товар відсутній
IPA60R330P6XKSA1 IPx60R330P6.pdf
IPA60R330P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
товар відсутній
ICE5QR1070AZXKLA1 Infineon-ICE5QRxxxxAx-DS-v02_10-EN.pdf?fileId=5546d46259d9a4bf015a4af1eaab111c
ICE5QR1070AZXKLA1
Виробник: Infineon Technologies
Description: AC-DC INTEGRATED POWER STAGE - C
Packaging: Bulk
на замовлення 1956 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
273+79.59 грн
Мінімальне замовлення: 273
ICE5QR2270AZXKLA1 Infineon-ICE5QRxxxxAx-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a4af1eaab111c
ICE5QR2270AZXKLA1
Виробник: Infineon Technologies
Description: ICE5QR2270 - QUASI RESONANT COOL
Packaging: Bulk
на замовлення 3935 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
228+95.51 грн
Мінімальне замовлення: 228
REF5QR0680BG40W1TOBO1
REF5QR0680BG40W1TOBO1
Виробник: Infineon Technologies
Description: REF5QR0680BG40W1TOBO1
Packaging: Box
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 3.1A, 200mA, 150mA
Regulator Topology: Buck, Resonant
Board Type: Fully Populated
Utilized IC / Part: ICE5QR0680BG
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 3, Isolated
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+7958.98 грн
IRS21064PBF INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw
IRS21064PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
116+182.33 грн
Мінімальне замовлення: 116
IRS21064PBF INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw
IRS21064PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
товар відсутній
TLE49SRS8XUMA1
Виробник: Infineon Technologies
Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Analog, PWM, SENT
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: 200Hz ~ 3kHz
Technology: Hall Effect
Resolution: 16 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 130mA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
TLE49SRS8XUMA1
Виробник: Infineon Technologies
Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Analog, PWM, SENT
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: 200Hz ~ 3kHz
Technology: Hall Effect
Resolution: 16 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 130mA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+455.36 грн
10+ 351.32 грн
25+ 324.98 грн
100+ 263.77 грн
500+ 247.28 грн
1000+ 230.8 грн
CYBL10563-56LQXIT CYBL10X6X_Family_Datasheet_RevL_3-23-17.pdf
CYBL10563-56LQXIT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 8kB ROM, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 1Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
товар відсутній
AUIRLR3410TRL IRSD-S-A0000226357-1.pdf?t.download=true&u=5oefqw
AUIRLR3410TRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4925 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
249+88.43 грн
Мінімальне замовлення: 249
SPIDERPLUSMBEVALTOBO1
Виробник: Infineon Technologies
Description: Eval
Packaging: Bulk
Function: System Basis Chip (SBC)
Type: Interface
Supplied Contents: Board(s)
Primary Attributes: 5V ~ 28V Supply
Embedded: No
товар відсутній
S29GL256S10FHB020 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL256S10FHB020
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
товар відсутній
CY8C20636A-24LQXI Infineon-CY8C20XX6A_S_1.8_V_Programmable_CapSense_Controller_with_SmartSense_Auto-tuning_1-33_Buttons_0-6_Sliders-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc6dc04671&utm_source=cypress&utm_medium=referral&utm_camp
CY8C20636A-24LQXI
Виробник: Infineon Technologies
Description: IC CAPSENCE 8K FLASH 48QFN
Packaging: Bulk
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 155 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
82+266.26 грн
Мінімальне замовлення: 82
ISZ810P06LMATMA1 Infineon-ISZ810P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185aa001d6936ff
ISZ810P06LMATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
товар відсутній
ISZ810P06LMATMA1 Infineon-ISZ810P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185aa001d6936ff
ISZ810P06LMATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
на замовлення 4721 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+69.75 грн
10+ 54.49 грн
100+ 42.37 грн
500+ 33.7 грн
1000+ 27.45 грн
2000+ 25.85 грн
Мінімальне замовлення: 5
IRGPS40B120UPBF fundamentals-of-power-semiconductors
IRGPS40B120UPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 80A 595W SUPER247
Packaging: Bag
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.71V @ 15V, 50A
Supplier Device Package: SUPER-247™ (TO-274AA)
IGBT Type: NPT
Switching Energy: 1.4mJ (on), 1.65mJ (off)
Test Condition: 600V, 40A, 4.7Ohm, 15V
Gate Charge: 340 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 595 W
товар відсутній
MB95F572KPF-G-SNE2 MB95560H_70H_80H_Series_RevA_Mar29_2016.pdf
MB95F572KPF-G-SNE2
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 8SOP
Packaging: Bulk
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 240 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 2x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 8-SOP
Number of I/O: 5
DigiKey Programmable: Not Verified
товар відсутній
MB95F574KNPF-G-SNE2 Prod_Selector_Guide_11-25-15.pdf
MB95F574KNPF-G-SNE2
Виробник: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 2x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 8-SOP
Number of I/O: 5
DigiKey Programmable: Not Verified
товар відсутній
MB95F774EPMC1-G-SNE2 5047
MB95F774EPMC1-G-SNE2
Виробник: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 59
DigiKey Programmable: Not Verified
товар відсутній
MB95F774EPMC1-G-SNE2 5047
MB95F774EPMC1-G-SNE2
Виробник: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 59
DigiKey Programmable: Not Verified
на замовлення 954 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+76.81 грн
Мінімальне замовлення: 5
MB95F334KP-G-SH-SNE2 MB95F332-34K_H_RevA_Apr4_2016.pdf
MB95F334KP-G-SH-SNE2
Виробник: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 32SDIP
Packaging: Bulk
Package / Case: 32-SDIP (0.400", 10.16mm)
Mounting Type: Through Hole
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1008 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-SDIP
Number of I/O: 29
DigiKey Programmable: Not Verified
товар відсутній
MB95F334KP-G-SH-SNE2 MB95F332-34K_H_RevA_Apr4_2016.pdf
MB95F334KP-G-SH-SNE2
Виробник: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 32SDIP
Packaging: Tube
Package / Case: 32-SDIP (0.400", 10.16mm)
Mounting Type: Through Hole
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1008 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-SDIP
Number of I/O: 29
DigiKey Programmable: Not Verified
на замовлення 524 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+79.94 грн
Мінімальне замовлення: 4
MB9BF366RPMC-G-JNE2 download
MB9BF366RPMC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 120LQFP
Packaging: Bulk
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
45+483.33 грн
Мінімальне замовлення: 45
TLE8201RAUMA1 TLE_8201R.pdf
TLE8201RAUMA1
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 4.75V-5.5V 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6), High Side (5)
Voltage - Supply: 4.75V ~ 5.5V
Technology: DMOS
Voltage - Load: 5V ~ 40V
Supplier Device Package: PG-DSO-36-27
Motor Type - AC, DC: Brushed DC
Grade: Automotive
товар відсутній
CY7C1315KV18-250BZXC download
CY7C1315KV18-250BZXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 852 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1926.46 грн
CY62136EV30LL-45ZSXIT Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239
CY62136EV30LL-45ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+227.55 грн
Мінімальне замовлення: 1000
CY62136EV30LL-45ZSXIT Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239
CY62136EV30LL-45ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+315.07 грн
10+ 275.25 грн
25+ 269.22 грн
50+ 251.3 грн
100+ 225.32 грн
250+ 224.51 грн
500+ 212.76 грн
CY62136EV30LL-45ZSXIT Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239
CY62136EV30LL-45ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
CY62148GN30-45ZSXI Infineon-CY62148GN_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed80b9e5996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62148GN30-45ZSXI
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
товар відсутній
CY7C1361KVE33-133AXM 5047
CY7C1361KVE33-133AXM
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
товар відсутній
IRG7PH35U-EP IRG7PH35UPBF%2CU-EP.pdf
IRG7PH35U-EP
Виробник: Infineon Technologies
Description: IGBT TRENCH 1200V 55A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 1.06mJ (on), 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 210 W
товар відсутній
DD700N22KXPSA1 Infineon-DD700N22K-DS-v03_02-EN.pdf?fileId=5546d461464245d30146668db98460e3
Виробник: Infineon Technologies
Description: DIODE MOD 2200V 700A BGPB60E2A-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 700A
Supplier Device Package: BG-PB60E2A-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 2200 A
Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
товар відсутній
IRAMS06UP60A-2 IRSDS06928-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: IRAMS06 - INTELLIGENT POWER MODU
Packaging: Bulk
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 6 A
Voltage: 600 V
на замовлення 1668 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
20+1104.15 грн
Мінімальне замовлення: 20
IMBG120R022M2HXTMA1 Infineon-IMBG120R022M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d21fff7e920ca
IMBG120R022M2HXTMA1
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 21.6mOhm @ 32.1A, 18V
Power Dissipation (Max): 385W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 800 V
товар відсутній
IMBG120R022M2HXTMA1 Infineon-IMBG120R022M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d21fff7e920ca
IMBG120R022M2HXTMA1
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 21.6mOhm @ 32.1A, 18V
Power Dissipation (Max): 385W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 800 V
на замовлення 815 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1511.85 грн
10+ 1046.5 грн
100+ 832.01 грн
CYAT817AZA88-5B002 Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4
CYAT817AZA88-5B002
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
CY8C4024AZI-S403T Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
CY8C4024AZI-S403T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
товар відсутній
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