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CY7C1011G30-10BAJXE CY7C1011G30-10BAJXE Infineon Technologies Infineon-CY7C1011G_AUTOMOTIVE_2_MBIT_(128K_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7727c5896 Description: IC SRAM 2MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
товар відсутній
CY7C1011G30-10BAJXET CY7C1011G30-10BAJXET Infineon Technologies Infineon-CY7C1011G_AUTOMOTIVE_2_MBIT_(128K_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7727c5896 Description: IC SRAM 2MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
товар відсутній
S29VS064RABBHI010 S29VS064RABBHI010 Infineon Technologies S29VS064RABBHI010_Web.pdf Description: IC FLASH 64MBIT PARALLEL 44FBGA
Packaging: Tray
Package / Case: 44-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 44-FBGA (7.5x5)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 80 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
товар відсутній
CP7896ATT Infineon Technologies Description: INFINEON
Packaging: Bulk
товар відсутній
TLE50461CAKLRXAMA1 Infineon Technologies Description: SPEED SENS
Packaging: Tube
Package / Case: 2-SIP, SSO-2-1
Output Type: Current
Type: Magnetic
Actuator Material: Magnet
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
SPU08N05L SPU08N05L Infineon Technologies Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)
1598+13.7 грн
Мінімальне замовлення: 1598
KITXMC48RLXECATV21TOBO1 KITXMC48RLXECATV21TOBO1 Infineon Technologies Infineon-Board_User_Manual_XMC4700_XMC4800_Relax_Kit_Series-UM-v01_02-EN.pdf?fileId=5546d46250cc1fdf01513f8e052d07fc Description: XMC4800 MICROCONTROLLER EVALUATI
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Utilized IC / Part: XMC4800
Platform: Relax Kit
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+8119.65 грн
IPU80R1K4P7AKMA1 IPU80R1K4P7AKMA1 Infineon Technologies INFN-S-A0002786355-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 4A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO251-3-21
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.05 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
на замовлення 75499 шт:
термін постачання 21-31 дні (днів)
692+30.27 грн
Мінімальне замовлення: 692
CY8C6245LQI-S3D62 CY8C6245LQI-S3D62 Infineon Technologies Infineon-PSOC_6_MCU_CY8C62X5-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8cb86719c Description: IC MCU 32BIT 512KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR, 10b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, MMC/SD/SDIO, QSPI, SmartCard, SPI, UART/USART, USB
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 53
DigiKey Programmable: Not Verified
товар відсутній
TLS810C1EJV33XUMA1 TLS810C1EJV33XUMA1 Infineon Technologies Infineon-TLS810C1EJ+V33-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969ed915d4258 Description: IC REG LINEAR 3.3V 100MA DSO8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Reset
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
на замовлення 15490 шт:
термін постачання 21-31 дні (днів)
523+41.66 грн
Мінімальне замовлення: 523
CY14B108L-ZS20XIT CY14B108L-ZS20XIT Infineon Technologies Infineon-CY14B108L_CY14B108N_8-Mbit_(1024_K_8_512_K_16)_nvSRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf410c3369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 8MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
товар відсутній
CY9BF124LPMC1-GNE2 CY9BF124LPMC1-GNE2 Infineon Technologies Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9 Description: IC MCU 32BIT 288KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b SAR; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
товар відсутній
CY9BF124LPMC-GNE2 CY9BF124LPMC-GNE2 Infineon Technologies Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9 Description: IC MCU 32BIT 288KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b SAR; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
товар відсутній
AN2136SC AN2136SC Infineon Technologies AN2131SC%2CQC%2CAN2135SC%2C36SC.pdf Description: IC MCU 8051 8K RAM 24MHZ 44QFP
Packaging: Bag
Package / Case: 44-QFP
Mounting Type: Surface Mount
Interface: I2C, USB
RAM Size: 8K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: AN213x
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 44-PQFP
Number of I/O: 8
DigiKey Programmable: Not Verified
товар відсутній
CY7C1061GN30-10BV1XIT CY7C1061GN30-10BV1XIT Infineon Technologies Infineon-CY7C1061GN_CY7C10612GN_16-Mbit_(1M_words_16_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee280b968f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
товар відсутній
AUIRFP4409 AUIRFP4409 Infineon Technologies auirfp4409.pdf?fileId=5546d462533600a4015355b1d03c1456 Description: MOSFET N-CH 300V 38A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 24A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5168 pF @ 50 V
товар відсутній
CY14U256LA-BA35XIT CY14U256LA-BA35XIT Infineon Technologies Infineon-CY14U256LA_256-Kbit_(32_K_8)_nvSRAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0a9c33546 Description: IC NVSRAM 256KBIT PAR 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товар відсутній
CY14V256LA-BA35XIT CY14V256LA-BA35XIT Infineon Technologies Infineon-CY14V256LA_256-Kbit_(32_K_x_8)_nvSRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec03c9034c2 Description: IC NVSRAM 256KBIT PAR 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товар відсутній
AUIRFP064N AUIRFP064N Infineon Technologies AUIRFP064N.pdf Description: MOSFET N-CH 55V 110A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 59A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
товар відсутній
TLE42672GATMA2 TLE42672GATMA2 Infineon Technologies TLE4267-2.pdf Description: IC REG LINEAR 5V 400MA TO263-7-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset
Grade: Automotive
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
Current - Supply (Max): 80 mA
Qualification: AEC-Q100
товар відсутній
FF3MR12KM1HPHPSA1 FF3MR12KM1HPHPSA1 Infineon Technologies Infineon-FF3MR12KM1HP-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c8d2fe47b018dc60857340d3e Description: FF3MR12KM1HPHPSA1
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 220A
Input Capacitance (Ciss) (Max) @ Vds: 24200pF @ 800V
Rds On (Max) @ Id, Vgs: 4.44mOhm @ 280A, 18V
Gate Charge (Qg) (Max) @ Vgs: 800nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 112mA
Supplier Device Package: AG-62MMHB
товар відсутній
FP75R12KT4B15BOSA1 FP75R12KT4B15BOSA1 Infineon Technologies Infineon-FP75R12KT4_B15-DS-v02_00-en_de.pdf?fileId=db3a30431ed1d7b2011f47233ba556da Description: IGBT MOD 1200V 75A 385W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
2+12371.1 грн
Мінімальне замовлення: 2
2EDF8275FXUMA1 2EDF8275FXUMA1 Infineon Technologies Infineon-2EDF8275F-DataSheet-v02_07-EN.pdf?fileId=8ac78c8c7c72fb9a017c73a8b6f0077d Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
товар відсутній
2EDF8275FXUMA1 2EDF8275FXUMA1 Infineon Technologies Infineon-2EDF8275F-DataSheet-v02_07-EN.pdf?fileId=8ac78c8c7c72fb9a017c73a8b6f0077d Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
на замовлення 2494 шт:
термін постачання 21-31 дні (днів)
2+236.69 грн
10+ 204.53 грн
25+ 193.36 грн
100+ 157.26 грн
250+ 149.2 грн
500+ 133.87 грн
1000+ 111.06 грн
Мінімальне замовлення: 2
IDWD20E65E7XKSA1 Infineon Technologies Infineon-IDWD20E65E7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8b6555fe018c3a59c6e758e7 Description: HOME APPLIANCES 14
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 74 ns
Technology: Standard
Current - Average Rectified (Io): 42A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 220 шт:
термін постачання 21-31 дні (днів)
2+179.48 грн
10+ 143.7 грн
Мінімальне замовлення: 2
FF3MR20KM1HPHPSA1 Infineon Technologies Infineon-FF3MR20KM1HP-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a7d35a380b Description: MEDIUM POWER 62MM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
NTC Thermistor: No
Supplier Device Package: AG-62MMHB
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 2000 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
1+55951.91 грн
IGI60L5050A1MXUMA1 Infineon Technologies Description: IC HALF BRIDGE DRIVER 1A
Packaging: Tape & Reel (TR)
Interface: PWM
Output Configuration: Half Bridge
Rds On (Typ): 500mOhm
Applications: General Purpose
Current - Output / Channel: 1A
Technology: NMOS
Load Type: Inductive, Capacitive, Resistive
товар відсутній
IRF6617TRPBF IRF6617TRPBF Infineon Technologies irf6617pbf.pdf?fileId=5546d462533600a4015355e853f21a17 Description: MOSFET N-CH 30V 14A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Supplier Device Package: DIRECTFET™ ST
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
товар відсутній
AUIRF2903Z AUIRF2903Z Infineon Technologies auirf2903z.pdf?fileId=5546d462533600a4015355ac2af61392 Description: MOSFET N-CH 30V 160A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 25 V
товар відсутній
TLI49632MXTMA1 Infineon Technologies Infineon-TLI4963-2M-DS-v01_00-EN.pdf?fileId=5546d462525dbac4015287eddf3f27cd Description: MAG SWITCH POS/CURRENT SENSOR
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
IPD95R450PFD7ATMA1 Infineon Technologies Infineon-IPD95R450PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81ae03fc0181f712e8992e5b Description: MOSFET N-CH 950V 13.3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
товар відсутній
IPD95R450PFD7ATMA1 Infineon Technologies Infineon-IPD95R450PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81ae03fc0181f712e8992e5b Description: MOSFET N-CH 950V 13.3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
на замовлення 2468 шт:
термін постачання 21-31 дні (днів)
2+188.1 грн
10+ 150.42 грн
100+ 119.71 грн
500+ 95.05 грн
1000+ 80.65 грн
Мінімальне замовлення: 2
IRGB4715DPBF IRGB4715DPBF Infineon Technologies IRG%28B%2CS%294715DPbF.pdf Description: IGBT 650V TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 86 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 30ns/100ns
Switching Energy: 200µJ (on), 90µJ (off)
Test Condition: 400V, 8A, 50Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 100 W
на замовлення 389 шт:
термін постачання 21-31 дні (днів)
247+89.16 грн
Мінімальне замовлення: 247
IRGB4715DPBF IRGB4715DPBF Infineon Technologies IRG%28B%2CS%294715DPbF.pdf Description: IGBT 650V TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 86 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 30ns/100ns
Switching Energy: 200µJ (on), 90µJ (off)
Test Condition: 400V, 8A, 50Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 100 W
товар відсутній
IRGB4615DPBF IRGB4615DPBF Infineon Technologies IRGx4615DPbF.pdf Description: IGBT 600V 23A 99W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
товар відсутній
AUIRL1404S AUIRL1404S Infineon Technologies AUIRL1404S%2CL.pdf Description: MOSFET N-CH 40V 160A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
156+139.16 грн
Мінімальне замовлення: 156
AUIRL1404S AUIRL1404S Infineon Technologies AUIRL1404S%2CL.pdf Description: MOSFET N-CH 40V 160A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
товар відсутній
AUIRL1404STRL AUIRL1404STRL Infineon Technologies AUIRL1404S%2CL.pdf Description: MOSFET N-CH 40V 160A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
товар відсутній
PVR1300NPBF PVR1300NPBF Infineon Technologies pvr13n.pdf?fileId=5546d462533600a40153568409ad2956 description Description: SSR RELAY DPST-NO 360MA 0-100V
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm), 10 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: DPST-NO (2 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 360 mA
Supplier Device Package: 16-DIP
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 5 Ohms
товар відсутній
CYPD6227-96BZXI CYPD6227-96BZXI Infineon Technologies Infineon-EZ-PD_CCG6DF_CCG6SF_USB_Type-C_Port_Controller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8e2c571be Description: CCG6
Packaging: Tray
Package / Case: 96-VFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.75V ~ 5.5V
Program Memory Type: FLASH (64kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 96-BGA (6x6)
Number of I/O: 19
DigiKey Programmable: Not Verified
товар відсутній
IMBG120R012M2HXTMA1 IMBG120R012M2HXTMA1 Infineon Technologies Infineon-IMBG120R012M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d21ffc661208b Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 56.7A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 800 V
товар відсутній
IMBG120R012M2HXTMA1 IMBG120R012M2HXTMA1 Infineon Technologies Infineon-IMBG120R012M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d21ffc661208b Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 56.7A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 800 V
на замовлення 949 шт:
термін постачання 21-31 дні (днів)
1+2331.66 грн
10+ 1656.01 грн
100+ 1456.03 грн
CY9AF141LAPMC1-GNE2 CY9AF141LAPMC1-GNE2 Infineon Technologies Description: IC MCU 32BIT 96KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
товар відсутній
IAUCN10S7N021ATMA1 IAUCN10S7N021ATMA1 Infineon Technologies Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 88A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7153 pF @ 50 V
Qualification: AEC-Q101
товар відсутній
IAUCN10S7N021ATMA1 IAUCN10S7N021ATMA1 Infineon Technologies Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 88A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7153 pF @ 50 V
Qualification: AEC-Q101
на замовлення 3127 шт:
термін постачання 21-31 дні (днів)
1+381.69 грн
10+ 246.04 грн
25+ 214.55 грн
100+ 168.24 грн
250+ 152.16 грн
500+ 142.35 грн
1000+ 132.01 грн
2500+ 123.47 грн
BAV70UE6359HTMA1 BAV70UE6359HTMA1 Infineon Technologies bav70series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141c0ba40e041d Description: DIODE ARRAY GP 80V 100MA SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: PG-SC74-6
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
Qualification: AEC-Q101
на замовлення 130000 шт:
термін постачання 21-31 дні (днів)
13172+1.41 грн
Мінімальне замовлення: 13172
CY7C1360S-200BGCT CY7C1360S-200BGCT Infineon Technologies Description: IC SRAM 9MBIT PARALLEL 119PBGA
Packaging: Tape & Reel (TR)
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
товар відсутній
CY7C1360S-200AXI CY7C1360S-200AXI Infineon Technologies Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.14V ~ 3.63V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
товар відсутній
IR21834PBF IR21834PBF Infineon Technologies ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1 Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
на замовлення 1100 шт:
термін постачання 21-31 дні (днів)
98+216.82 грн
Мінімальне замовлення: 98
S29GL512S11TFB023 Infineon Technologies Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5 Description: PNOR
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 64M x 8
Qualification: AEC-Q100
товар відсутній
IDWD80G200C5XKSA1 Infineon Technologies Description: SIC DISCRETE
Packaging: Tube
товар відсутній
CY241V8ASXC-16 CY241V8ASXC-16 Infineon Technologies Description: IC CLOCK GEN MPEG W/VCXO 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Clock Generator
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
на замовлення 26176 шт:
термін постачання 21-31 дні (днів)
198+111.09 грн
Мінімальне замовлення: 198
S26KL128SDABHI020 S26KL128SDABHI020 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 128MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 335 шт:
термін постачання 21-31 дні (днів)
1+590.16 грн
10+ 513.51 грн
25+ 489.6 грн
80+ 398.96 грн
FZ1000R65KE4NPSA1 FZ1000R65KE4NPSA1 Infineon Technologies Description: IHV IHM T
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: DC
Configuration: Single
Operating Temperature: -50°C ~ 135°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.25V @ 15V, 1kA
NTC Thermistor: No
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1 kA
Voltage - Collector Emitter Breakdown (Max): 6500 V
Power - Max: 3600000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 245000 pF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+245104.5 грн
CY7C1061GE-10BVXIT CY7C1061GE-10BVXIT Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
товар відсутній
TLE4973R120T5S0001XUMA1 TLE4973R120T5S0001XUMA1 Infineon Technologies TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+305.97 грн
Мінімальне замовлення: 2500
TLE4973R120T5S0001XUMA1 TLE4973R120T5S0001XUMA1 Infineon Technologies TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
1+556.46 грн
10+ 428.53 грн
25+ 396.41 грн
100+ 321.76 грн
500+ 301.64 грн
1000+ 281.53 грн
IRF1407PBF IRF1407PBF Infineon Technologies irf1407pbf.pdf?fileId=5546d462533600a4015355db28c218c8 description Description: MOSFET N-CH 75V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
на замовлення 11606 шт:
термін постачання 21-31 дні (днів)
2+204.56 грн
50+ 99.17 грн
100+ 89.66 грн
500+ 70.11 грн
Мінімальне замовлення: 2
IPSA70R750P7SAKMA1 IPSA70R750P7SAKMA1 Infineon Technologies Infineon-IPSA70R750P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f4da569fd138b Description: MOSFET N-CH 700V 6.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
на замовлення 2832 шт:
термін постачання 21-31 дні (днів)
1019+21.19 грн
Мінімальне замовлення: 1019
CY8CPLC10-28PVXI CY8CPLC10-28PVXI Infineon Technologies Infineon-CY8CPLC10_Powerline_Communication_Solution-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca76724344&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC PLC PSOC CMOS 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Baud Rates: 2.4k
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 28-SSOP
на замовлення 182 шт:
термін постачання 21-31 дні (днів)
1+848.02 грн
10+ 750.57 грн
47+ 719.44 грн
141+ 642.54 грн
CY7C1011G30-10BAJXE Infineon-CY7C1011G_AUTOMOTIVE_2_MBIT_(128K_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7727c5896
CY7C1011G30-10BAJXE
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
товар відсутній
CY7C1011G30-10BAJXET Infineon-CY7C1011G_AUTOMOTIVE_2_MBIT_(128K_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7727c5896
CY7C1011G30-10BAJXET
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
товар відсутній
S29VS064RABBHI010 S29VS064RABBHI010_Web.pdf
S29VS064RABBHI010
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 44FBGA
Packaging: Tray
Package / Case: 44-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 44-FBGA (7.5x5)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 80 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
товар відсутній
CP7896ATT
Виробник: Infineon Technologies
Description: INFINEON
Packaging: Bulk
товар відсутній
TLE50461CAKLRXAMA1
Виробник: Infineon Technologies
Description: SPEED SENS
Packaging: Tube
Package / Case: 2-SIP, SSO-2-1
Output Type: Current
Type: Magnetic
Actuator Material: Magnet
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
SPU08N05L
SPU08N05L
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1598+13.7 грн
Мінімальне замовлення: 1598
KITXMC48RLXECATV21TOBO1 Infineon-Board_User_Manual_XMC4700_XMC4800_Relax_Kit_Series-UM-v01_02-EN.pdf?fileId=5546d46250cc1fdf01513f8e052d07fc
KITXMC48RLXECATV21TOBO1
Виробник: Infineon Technologies
Description: XMC4800 MICROCONTROLLER EVALUATI
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Utilized IC / Part: XMC4800
Platform: Relax Kit
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+8119.65 грн
IPU80R1K4P7AKMA1 INFN-S-A0002786355-1.pdf?t.download=true&u=5oefqw
IPU80R1K4P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO251-3-21
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.05 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
на замовлення 75499 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
692+30.27 грн
Мінімальне замовлення: 692
CY8C6245LQI-S3D62 Infineon-PSOC_6_MCU_CY8C62X5-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8cb86719c
CY8C6245LQI-S3D62
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR, 10b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, MMC/SD/SDIO, QSPI, SmartCard, SPI, UART/USART, USB
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 53
DigiKey Programmable: Not Verified
товар відсутній
TLS810C1EJV33XUMA1 Infineon-TLS810C1EJ+V33-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969ed915d4258
TLS810C1EJV33XUMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V 100MA DSO8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Reset
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
на замовлення 15490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
523+41.66 грн
Мінімальне замовлення: 523
CY14B108L-ZS20XIT Infineon-CY14B108L_CY14B108N_8-Mbit_(1024_K_8_512_K_16)_nvSRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf410c3369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14B108L-ZS20XIT
Виробник: Infineon Technologies
Description: IC NVSRAM 8MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
товар відсутній
CY9BF124LPMC1-GNE2 Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9
CY9BF124LPMC1-GNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b SAR; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
товар відсутній
CY9BF124LPMC-GNE2 Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9
CY9BF124LPMC-GNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b SAR; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
товар відсутній
AN2136SC AN2131SC%2CQC%2CAN2135SC%2C36SC.pdf
AN2136SC
Виробник: Infineon Technologies
Description: IC MCU 8051 8K RAM 24MHZ 44QFP
Packaging: Bag
Package / Case: 44-QFP
Mounting Type: Surface Mount
Interface: I2C, USB
RAM Size: 8K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: AN213x
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 44-PQFP
Number of I/O: 8
DigiKey Programmable: Not Verified
товар відсутній
CY7C1061GN30-10BV1XIT Infineon-CY7C1061GN_CY7C10612GN_16-Mbit_(1M_words_16_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee280b968f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1061GN30-10BV1XIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
товар відсутній
AUIRFP4409 auirfp4409.pdf?fileId=5546d462533600a4015355b1d03c1456
AUIRFP4409
Виробник: Infineon Technologies
Description: MOSFET N-CH 300V 38A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 24A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5168 pF @ 50 V
товар відсутній
CY14U256LA-BA35XIT Infineon-CY14U256LA_256-Kbit_(32_K_8)_nvSRAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0a9c33546
CY14U256LA-BA35XIT
Виробник: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товар відсутній
CY14V256LA-BA35XIT Infineon-CY14V256LA_256-Kbit_(32_K_x_8)_nvSRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec03c9034c2
CY14V256LA-BA35XIT
Виробник: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товар відсутній
AUIRFP064N AUIRFP064N.pdf
AUIRFP064N
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 110A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 59A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
товар відсутній
TLE42672GATMA2 TLE4267-2.pdf
TLE42672GATMA2
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 400MA TO263-7-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset
Grade: Automotive
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
Current - Supply (Max): 80 mA
Qualification: AEC-Q100
товар відсутній
FF3MR12KM1HPHPSA1 Infineon-FF3MR12KM1HP-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c8d2fe47b018dc60857340d3e
FF3MR12KM1HPHPSA1
Виробник: Infineon Technologies
Description: FF3MR12KM1HPHPSA1
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 220A
Input Capacitance (Ciss) (Max) @ Vds: 24200pF @ 800V
Rds On (Max) @ Id, Vgs: 4.44mOhm @ 280A, 18V
Gate Charge (Qg) (Max) @ Vgs: 800nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 112mA
Supplier Device Package: AG-62MMHB
товар відсутній
FP75R12KT4B15BOSA1 Infineon-FP75R12KT4_B15-DS-v02_00-en_de.pdf?fileId=db3a30431ed1d7b2011f47233ba556da
FP75R12KT4B15BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 75A 385W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+12371.1 грн
Мінімальне замовлення: 2
2EDF8275FXUMA1 Infineon-2EDF8275F-DataSheet-v02_07-EN.pdf?fileId=8ac78c8c7c72fb9a017c73a8b6f0077d
2EDF8275FXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
товар відсутній
2EDF8275FXUMA1 Infineon-2EDF8275F-DataSheet-v02_07-EN.pdf?fileId=8ac78c8c7c72fb9a017c73a8b6f0077d
2EDF8275FXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
на замовлення 2494 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+236.69 грн
10+ 204.53 грн
25+ 193.36 грн
100+ 157.26 грн
250+ 149.2 грн
500+ 133.87 грн
1000+ 111.06 грн
Мінімальне замовлення: 2
IDWD20E65E7XKSA1 Infineon-IDWD20E65E7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8b6555fe018c3a59c6e758e7
Виробник: Infineon Technologies
Description: HOME APPLIANCES 14
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 74 ns
Technology: Standard
Current - Average Rectified (Io): 42A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 220 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+179.48 грн
10+ 143.7 грн
Мінімальне замовлення: 2
FF3MR20KM1HPHPSA1 Infineon-FF3MR20KM1HP-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a7d35a380b
Виробник: Infineon Technologies
Description: MEDIUM POWER 62MM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
NTC Thermistor: No
Supplier Device Package: AG-62MMHB
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 2000 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+55951.91 грн
IGI60L5050A1MXUMA1
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1A
Packaging: Tape & Reel (TR)
Interface: PWM
Output Configuration: Half Bridge
Rds On (Typ): 500mOhm
Applications: General Purpose
Current - Output / Channel: 1A
Technology: NMOS
Load Type: Inductive, Capacitive, Resistive
товар відсутній
IRF6617TRPBF irf6617pbf.pdf?fileId=5546d462533600a4015355e853f21a17
IRF6617TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Supplier Device Package: DIRECTFET™ ST
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
товар відсутній
AUIRF2903Z auirf2903z.pdf?fileId=5546d462533600a4015355ac2af61392
AUIRF2903Z
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 160A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 25 V
товар відсутній
TLI49632MXTMA1 Infineon-TLI4963-2M-DS-v01_00-EN.pdf?fileId=5546d462525dbac4015287eddf3f27cd
Виробник: Infineon Technologies
Description: MAG SWITCH POS/CURRENT SENSOR
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
IPD95R450PFD7ATMA1 Infineon-IPD95R450PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81ae03fc0181f712e8992e5b
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 13.3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
товар відсутній
IPD95R450PFD7ATMA1 Infineon-IPD95R450PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81ae03fc0181f712e8992e5b
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 13.3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
на замовлення 2468 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+188.1 грн
10+ 150.42 грн
100+ 119.71 грн
500+ 95.05 грн
1000+ 80.65 грн
Мінімальне замовлення: 2
IRGB4715DPBF IRG%28B%2CS%294715DPbF.pdf
IRGB4715DPBF
Виробник: Infineon Technologies
Description: IGBT 650V TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 86 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 30ns/100ns
Switching Energy: 200µJ (on), 90µJ (off)
Test Condition: 400V, 8A, 50Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 100 W
на замовлення 389 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
247+89.16 грн
Мінімальне замовлення: 247
IRGB4715DPBF IRG%28B%2CS%294715DPbF.pdf
IRGB4715DPBF
Виробник: Infineon Technologies
Description: IGBT 650V TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 86 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 30ns/100ns
Switching Energy: 200µJ (on), 90µJ (off)
Test Condition: 400V, 8A, 50Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 100 W
товар відсутній
IRGB4615DPBF IRGx4615DPbF.pdf
IRGB4615DPBF
Виробник: Infineon Technologies
Description: IGBT 600V 23A 99W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
товар відсутній
AUIRL1404S AUIRL1404S%2CL.pdf
AUIRL1404S
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
156+139.16 грн
Мінімальне замовлення: 156
AUIRL1404S AUIRL1404S%2CL.pdf
AUIRL1404S
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
товар відсутній
AUIRL1404STRL AUIRL1404S%2CL.pdf
AUIRL1404STRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
товар відсутній
PVR1300NPBF description pvr13n.pdf?fileId=5546d462533600a40153568409ad2956
PVR1300NPBF
Виробник: Infineon Technologies
Description: SSR RELAY DPST-NO 360MA 0-100V
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm), 10 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: DPST-NO (2 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 360 mA
Supplier Device Package: 16-DIP
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 5 Ohms
товар відсутній
CYPD6227-96BZXI Infineon-EZ-PD_CCG6DF_CCG6SF_USB_Type-C_Port_Controller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8e2c571be
CYPD6227-96BZXI
Виробник: Infineon Technologies
Description: CCG6
Packaging: Tray
Package / Case: 96-VFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.75V ~ 5.5V
Program Memory Type: FLASH (64kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 96-BGA (6x6)
Number of I/O: 19
DigiKey Programmable: Not Verified
товар відсутній
IMBG120R012M2HXTMA1 Infineon-IMBG120R012M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d21ffc661208b
IMBG120R012M2HXTMA1
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 56.7A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 800 V
товар відсутній
IMBG120R012M2HXTMA1 Infineon-IMBG120R012M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d21ffc661208b
IMBG120R012M2HXTMA1
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 56.7A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 800 V
на замовлення 949 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2331.66 грн
10+ 1656.01 грн
100+ 1456.03 грн
CY9AF141LAPMC1-GNE2
CY9AF141LAPMC1-GNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 96KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
товар відсутній
IAUCN10S7N021ATMA1
IAUCN10S7N021ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 88A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7153 pF @ 50 V
Qualification: AEC-Q101
товар відсутній
IAUCN10S7N021ATMA1
IAUCN10S7N021ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 88A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7153 pF @ 50 V
Qualification: AEC-Q101
на замовлення 3127 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+381.69 грн
10+ 246.04 грн
25+ 214.55 грн
100+ 168.24 грн
250+ 152.16 грн
500+ 142.35 грн
1000+ 132.01 грн
2500+ 123.47 грн
BAV70UE6359HTMA1 bav70series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141c0ba40e041d
BAV70UE6359HTMA1
Виробник: Infineon Technologies
Description: DIODE ARRAY GP 80V 100MA SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: PG-SC74-6
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
Qualification: AEC-Q101
на замовлення 130000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13172+1.41 грн
Мінімальне замовлення: 13172
CY7C1360S-200BGCT
CY7C1360S-200BGCT
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 119PBGA
Packaging: Tape & Reel (TR)
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
товар відсутній
CY7C1360S-200AXI
CY7C1360S-200AXI
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.14V ~ 3.63V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
товар відсутній
IR21834PBF ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1
IR21834PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
на замовлення 1100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
98+216.82 грн
Мінімальне замовлення: 98
S29GL512S11TFB023 Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5
Виробник: Infineon Technologies
Description: PNOR
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 64M x 8
Qualification: AEC-Q100
товар відсутній
IDWD80G200C5XKSA1
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
товар відсутній
CY241V8ASXC-16
CY241V8ASXC-16
Виробник: Infineon Technologies
Description: IC CLOCK GEN MPEG W/VCXO 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Clock Generator
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
на замовлення 26176 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
198+111.09 грн
Мінімальне замовлення: 198
S26KL128SDABHI020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KL128SDABHI020
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 335 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+590.16 грн
10+ 513.51 грн
25+ 489.6 грн
80+ 398.96 грн
FZ1000R65KE4NPSA1
FZ1000R65KE4NPSA1
Виробник: Infineon Technologies
Description: IHV IHM T
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: DC
Configuration: Single
Operating Temperature: -50°C ~ 135°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.25V @ 15V, 1kA
NTC Thermistor: No
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1 kA
Voltage - Collector Emitter Breakdown (Max): 6500 V
Power - Max: 3600000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 245000 pF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+245104.5 грн
CY7C1061GE-10BVXIT Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061GE-10BVXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
товар відсутній
TLE4973R120T5S0001XUMA1 TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf
TLE4973R120T5S0001XUMA1
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+305.97 грн
Мінімальне замовлення: 2500
TLE4973R120T5S0001XUMA1 TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf
TLE4973R120T5S0001XUMA1
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+556.46 грн
10+ 428.53 грн
25+ 396.41 грн
100+ 321.76 грн
500+ 301.64 грн
1000+ 281.53 грн
IRF1407PBF description irf1407pbf.pdf?fileId=5546d462533600a4015355db28c218c8
IRF1407PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
на замовлення 11606 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+204.56 грн
50+ 99.17 грн
100+ 89.66 грн
500+ 70.11 грн
Мінімальне замовлення: 2
IPSA70R750P7SAKMA1 Infineon-IPSA70R750P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f4da569fd138b
IPSA70R750P7SAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 6.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
на замовлення 2832 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1019+21.19 грн
Мінімальне замовлення: 1019
CY8CPLC10-28PVXI Infineon-CY8CPLC10_Powerline_Communication_Solution-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca76724344&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8CPLC10-28PVXI
Виробник: Infineon Technologies
Description: IC PLC PSOC CMOS 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Baud Rates: 2.4k
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 28-SSOP
на замовлення 182 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+848.02 грн
10+ 750.57 грн
47+ 719.44 грн
141+ 642.54 грн
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