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PROF2BTS70041EPRDBTOBO1 PROF2BTS70041EPRDBTOBO1 Infineon Technologies Description: Smart High-Side Power Switch
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7004-1EPR
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+3481.42 грн
FF150R12KE3B8BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO2B-311
Packaging: Tray
товар відсутній
CY7C64215-56LFXC CY7C64215-56LFXC Infineon Technologies CY7C64215.pdf Description: IC CNTRLR USB FS 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, USB
RAM Size: 1K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY7C642xx
Program Memory Type: FLASH (16kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 50
DigiKey Programmable: Not Verified
товар відсутній
FZ3600R17HE4HOSA2 FZ3600R17HE4HOSA2 Infineon Technologies Infineon-FZ3600R17HE4-DS-v02_05-EN.pdf?fileId=db3a30433e4143bd013e470701954203 Description: IGBT MODULE 1700V 7200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3600A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 7200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 21000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 295 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+97600.39 грн
FZ3600R17HE4PHPSA1 FZ3600R17HE4PHPSA1 Infineon Technologies Infineon-FZ3600R17HE4P-DS-v03_00-EN.pdf?fileId=5546d462576f34750157dd48123d2822 Description: IGBT MODULE 1700V 7200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3600A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 7200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 295 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+99525.28 грн
IPS65R1K0CEAKMA1 IPS65R1K0CEAKMA1 Infineon Technologies Infineon-IPS65R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7a3c90c1e8a Description: MOSFET N-CH 650V 4.3A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: TO-251
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
товар відсутній
CY8C20536A-24PVXI CY8C20536A-24PVXI Infineon Technologies Infineon-CY8C20XX6A_S_1.8_V_Programmable_CapSense_Controller_with_SmartSense_Auto-tuning_1-33_Buttons_0-6_Sliders-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc6dc04671&utm_source=cypress&utm_medium=referral&utm_camp Description: IC MCU 8K FLASH 1K SRAM 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-SSOP
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 363 шт:
термін постачання 21-31 дні (днів)
1+463.2 грн
10+ 400.3 грн
25+ 378.42 грн
100+ 307.79 грн
250+ 292.01 грн
CY95F633KNPMC-G-UNCGE2 CY95F633KNPMC-G-UNCGE2 Infineon Technologies Infineon-CY95630H_Series_New_8FX_8-bit_Microcontrollers-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe Description: IC MCU 8BIT 12KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2+193.59 грн
10+ 167.47 грн
25+ 158.34 грн
80+ 128.78 грн
250+ 122.18 грн
500+ 109.63 грн
1000+ 90.94 грн
2500+ 86.4 грн
Мінімальне замовлення: 2
CY95F634HNPMC-G-UNE2 CY95F634HNPMC-G-UNE2 Infineon Technologies Infineon-CY95630H_Series_New_8FX_8-bit_Microcontrollers-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe Description: IC MM MCU 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 28
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2+231.99 грн
10+ 200.98 грн
25+ 190.01 грн
80+ 154.54 грн
250+ 146.61 грн
500+ 131.56 грн
1000+ 109.13 грн
2500+ 103.68 грн
Мінімальне замовлення: 2
CY9BF406RAPMC-G-UNE1 CY9BF406RAPMC-G-UNE1 Infineon Technologies download Description: IC MCU 32BIT 512KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
1+518.06 грн
10+ 450.87 грн
25+ 429.89 грн
84+ 350.32 грн
252+ 334.57 грн
504+ 305.05 грн
CY9AF116MAPMC-GNCGE2 Infineon Technologies Infineon-CY9A110A_Series_32_Bit_ARM_(R)_Cortex_(R)-M3_FM3_Microcontroller-DataSheet-v07_00-CN.pdf?fileId=8ac78c8c7d0d8da4017d0eddeb686295 Description: IC MCU 32BIT 512KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
DigiKey Programmable: Not Verified
на замовлення 1190 шт:
термін постачання 21-31 дні (днів)
1+576.84 грн
10+ 502.12 грн
25+ 478.74 грн
119+ 390.1 грн
238+ 372.57 грн
476+ 339.69 грн
952+ 291.01 грн
CYT3DLABHBQ1AESGS CYT3DLABHBQ1AESGS Infineon Technologies Infineon-CYT3DL_TRAVEO_TM_T2G_32-BIT_AUTOMOTIVE_MCU_BASED_ON_ARM_R_CORTEX_R_-M7_SINGLE-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c869190210186f0ccf72f3fd3 Description: IC MCU 32BT 4.063MB FLSH 216TQFP
Packaging: Tray
Package / Case: 216-QFP
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TQFP
Number of I/O: 108
DigiKey Programmable: Not Verified
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
1+2609.1 грн
10+ 2317.45 грн
25+ 2213.27 грн
80+ 1857.15 грн
KIT1EDBAUXGANTOBO1 Infineon Technologies Description: KIT_1EDB_AUX_GAN
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDB8275F, 1EDN7511B
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
товар відсутній
IMW65R015M2HXKSA1 IMW65R015M2HXKSA1 Infineon Technologies Infineon-IMW65R015M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63bb7ba52e8 Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 64.2A, 20V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
на замовлення 230 шт:
термін постачання 21-31 дні (днів)
1+1647.44 грн
10+ 1163.1 грн
25+ 1054.56 грн
100+ 875.98 грн
IMW65R007M2HXKSA1 IMW65R007M2HXKSA1 Infineon Technologies IMW65R007M2H.pdf Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
1+2855.2 грн
10+ 2089.45 грн
25+ 1920.59 грн
IRGS4615DPBF IRGS4615DPBF Infineon Technologies IRGx4615DPbF.pdf Description: IGBT 600V 23A 99W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
на замовлення 350 шт:
термін постачання 21-31 дні (днів)
237+92.82 грн
Мінімальне замовлення: 237
IRGS4615DPBF IRGS4615DPBF Infineon Technologies IRGx4615DPbF.pdf Description: IGBT 600V 23A 99W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
товар відсутній
IRGS4607DPBF IRGS4607DPBF Infineon Technologies IRGx4607DPbF.pdf Description: IGBT 600V 11A 58W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
325+67.24 грн
Мінімальне замовлення: 325
IRGS4607DPBF IRGS4607DPBF Infineon Technologies IRGx4607DPbF.pdf Description: IGBT 600V 11A 58W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
товар відсутній
IRGSL4B60KD1PBF IRGSL4B60KD1PBF Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 11A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
товар відсутній
IRGS6B60KPBF IRGS6B60KPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT 600V 13A 90W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
товар відсутній
S25FL128SAGNFV011 S25FL128SAGNFV011 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
товар відсутній
BAR 67-02V E6327 BAR 67-02V E6327 Infineon Technologies fundamentals-of-power-semiconductors Description: RF DIODE PIN 150V 250MW SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SC79-2
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
товар відсутній
CY8CKIT-062S2-AI CY8CKIT-062S2-AI Infineon Technologies Infineon-CY8CKIT-062S2-AI_Product_Brief-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee43d7df20372 Description: PSOC 6 AI EVAL BOARD
Packaging: Box
For Use With/Related Products: BGT60TR13C
Sensitivity: 60GHz
Frequency: 60GHz
Interface: RF
Type: Transceiver; RADAR
Sensor Type: Accelerometer, Gyroscope, Magnetometer, Microphone, Pressure, Radar
Utilized IC / Part: BGT60, BMI270, BMM350, DPS368, IM72D128
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
товар відсутній
FS1150R08A8P3LMCHPSA1 FS1150R08A8P3LMCHPSA1 Infineon Technologies Infineon-FS1150R08A8P3LMC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f15854bae0098 Description: FS1150R08A8P3LMCHPSA1
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 600A
NTC Thermistor: No
Current - Collector (Ic) (Max): 1.15 kA
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 1 kW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V
товар відсутній
FS1150R08A8P3LBCHPSA1 FS1150R08A8P3LBCHPSA1 Infineon Technologies Description: FS1150R08A8P3LBCHPSA1
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: No
Current - Collector (Ic) (Max): 1.15 kA
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 1 kW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V
товар відсутній
KP467XTMA1 Infineon Technologies KP467.pdf Description: MEMS GROWTH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 6.52PSI ~ 29.01PSI (45kPa ~ 200kPa)
Pressure Type: Absolute
Accuracy: ±0.435PSI (±3kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.25V
Applications: Industrial Automation, Medical Ventilation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Maximum Pressure: 87.02PSI (600kPa)
Grade: Automotive
Qualification: AEC-Q103-002
товар відсутній
KP467XTMA1 Infineon Technologies KP467.pdf Description: MEMS GROWTH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 6.52PSI ~ 29.01PSI (45kPa ~ 200kPa)
Pressure Type: Absolute
Accuracy: ±0.435PSI (±3kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.25V
Applications: Industrial Automation, Medical Ventilation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Maximum Pressure: 87.02PSI (600kPa)
Grade: Automotive
Qualification: AEC-Q103-002
на замовлення 2173 шт:
термін постачання 21-31 дні (днів)
2+257.07 грн
10+ 222.49 грн
25+ 210.36 грн
100+ 171.09 грн
250+ 162.32 грн
500+ 145.65 грн
1000+ 120.82 грн
Мінімальне замовлення: 2
AIMZH120R020M1TXKSA1 AIMZH120R020M1TXKSA1 Infineon Technologies Infineon-AIMZH120R020M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c68ea06f24a7c Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 13.7mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Qualification: AEC-Q101
на замовлення 154 шт:
термін постачання 21-31 дні (днів)
1+2317.55 грн
10+ 1983.33 грн
CY7C1041CV33-10BAJXE CY7C1041CV33-10BAJXE Infineon Technologies Infineon-CY7C1041CV33_Automotive_4-Mbit_(256_K_16)_Static_RAM-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecab2cc43b0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Description: IC SRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (7x8.5)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товар відсутній
CY7C1041BN-20ZSXA CY7C1041BN-20ZSXA Infineon Technologies download Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
CY7C1041CV33-15VC CY7C1041CV33-15VC Infineon Technologies CY7C1041CV33%20RevH.pdf Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Tube
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товар відсутній
CY3261-RGB Infineon Technologies Description: KIT DEMO PSOC RGB LIGHT
Features: Dimmable
Packaging: Bulk
Voltage - Input: 6V
Utilized IC / Part: CY8C27443
Supplied Contents: Board(s), Power Supply
Outputs and Type: 3, Non-Isolated
товар відсутній
CY7C64345-32LQXC CY7C64345-32LQXC Infineon Technologies download Description: IC MCU USB ENCORE CONTROL 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 1K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.5V
Controller Series: CY7C643xx
Program Memory Type: FLASH (16kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 25
DigiKey Programmable: Not Verified
товар відсутній
CY7C64345-32LQXCT CY7C64345-32LQXCT Infineon Technologies download Description: IC MCU USB ENCORE CONTROL 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 1K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.5V
Controller Series: CY7C643xx
Program Memory Type: FLASH (16kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 25
DigiKey Programmable: Not Verified
товар відсутній
CY7C64343-32LQXCT CY7C64343-32LQXCT Infineon Technologies download Description: IC MCU USB ENCORE CONTROL 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 1K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.5V
Controller Series: CY7C643xx
Program Memory Type: FLASH (8kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 25
DigiKey Programmable: Not Verified
товар відсутній
S29PL127J60TFID30H S29PL127J60TFID30H Infineon Technologies Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 60 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
товар відсутній
SKP02N60XKSA1 SKP02N60XKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT 600V 6A 30W TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/259ns
Switching Energy: 64µJ
Test Condition: 400V, 2A, 118Ohm, 15V
Gate Charge: 14 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 30 W
товар відсутній
IPDD60R037CM8XTMA1 IPDD60R037CM8XTMA1 Infineon Technologies Description: IPDD60R037CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HDSOP-10-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V
товар відсутній
IPDD60R037CM8XTMA1 IPDD60R037CM8XTMA1 Infineon Technologies Description: IPDD60R037CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HDSOP-10-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V
на замовлення 1101 шт:
термін постачання 21-31 дні (днів)
1+536.08 грн
10+ 350.95 грн
100+ 256.95 грн
500+ 211.09 грн
IPDD60R180CM8XTMA1 IPDD60R180CM8XTMA1 Infineon Technologies Description: IPDD60R180CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 169W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-HDSOP-10-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
товар відсутній
IPDD60R180CM8XTMA1 IPDD60R180CM8XTMA1 Infineon Technologies Description: IPDD60R180CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 169W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-HDSOP-10-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
товар відсутній
ISZ520N20NM6ATMA1 ISZ520N20NM6ATMA1 Infineon Technologies Infineon-ISZ520N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d3286fe540f2f Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 47.8mOhm @ 15A, 15V
Power Dissipation (Max): 2.5W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 31µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
товар відсутній
ISZ520N20NM6ATMA1 ISZ520N20NM6ATMA1 Infineon Technologies Infineon-ISZ520N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d3286fe540f2f Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 47.8mOhm @ 15A, 15V
Power Dissipation (Max): 2.5W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 31µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
на замовлення 4974 шт:
термін постачання 21-31 дні (днів)
2+180.26 грн
10+ 112.08 грн
100+ 76.92 грн
500+ 58.04 грн
1000+ 53.49 грн
2000+ 49.66 грн
Мінімальне замовлення: 2
XC836MT2FRAABLXUMA1 Infineon Technologies Orderable_Part_Number_OPN_Translation_Table_Web.pdf Description: IC MCU 8BIT 8KB FLASH 28TSSOP
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Number of I/O: 25
DigiKey Programmable: Not Verified
товар відсутній
LTA2102XUMA1 Infineon Technologies Description: DIGITAL CHARGER/ADAPTER
Packaging: Tape & Reel (TR)
товар відсутній
CYPD727268LQXQTXUMA1 Infineon Technologies Description: CHARGER_ADAPTER
Packaging: Tape & Reel (TR)
товар відсутній
IQDH88N06LM5CGATMA1 IQDH88N06LM5CGATMA1 Infineon Technologies Infineon-IQDH88N06LM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188b39789f50841 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+143.21 грн
Мінімальне замовлення: 5000
IQDH88N06LM5CGATMA1 IQDH88N06LM5CGATMA1 Infineon Technologies Infineon-IQDH88N06LM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188b39789f50841 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2+296.26 грн
10+ 256.45 грн
25+ 242.42 грн
100+ 197.16 грн
250+ 187.05 грн
500+ 167.84 грн
1000+ 139.23 грн
2500+ 132.27 грн
Мінімальне замовлення: 2
CY62167ELL-45ZXI CY62167ELL-45ZXI Infineon Technologies Infineon-CY62167E_16-Mbit_(1_M_16_2_M_8)_Static_RAM-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebed5b432bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
на замовлення 256 шт:
термін постачання 21-31 дні (днів)
1+1136.44 грн
10+ 1012.99 грн
25+ 999.22 грн
40+ 925.97 грн
96+ 811.48 грн
CY62167ELL-45ZXIT CY62167ELL-45ZXIT Infineon Technologies Infineon-CY62167E_16-Mbit_(1_M_16_2_M_8)_Static_RAM-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebed5b432bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1+1136.44 грн
10+ 1012.99 грн
25+ 999.22 грн
50+ 925.96 грн
100+ 811.49 грн
250+ 776.69 грн
500+ 758.99 грн
CY62167G-45BVXIT CY62167G-45BVXIT Infineon Technologies Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral& Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
товар відсутній
CY62167G30-55BVXE CY62167G30-55BVXE Infineon Technologies download Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
товар відсутній
CY62167EV18LL-55BVXIT CY62167EV18LL-55BVXIT Infineon Technologies Infineon-CY62167EV18_MoBL_16-Mbit_(1_M_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe53a531d2&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.25V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
товар відсутній
CY62167GE18-55BVXI CY62167GE18-55BVXI Infineon Technologies Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral& Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
товар відсутній
CY62167GE18-55BVXIT CY62167GE18-55BVXIT Infineon Technologies Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral& Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
товар відсутній
T1060N65TOFXPSA1 T1060N65TOFXPSA1 Infineon Technologies Infineon-T1060N-DS-v02_02-en_de.pdf?fileId=db3a30433c1a8752013c43c707cf3655 Description: SCR MODULE 6500V 1650A DO200AD
Packaging: Tray
Package / Case: TO-200AE
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 22500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1487 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 1650 A
Voltage - Off State: 6.5 kV
товар відсутній
IRF60DM206 IRF60DM206 Infineon Technologies irf60dm206.pdf?fileId=5546d462533600a4015355e433aa19ca Description: MOSFET N-CH 60V 130A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 25 V
товар відсутній
IRF60DM206 IRF60DM206 Infineon Technologies irf60dm206.pdf?fileId=5546d462533600a4015355e433aa19ca Description: MOSFET N-CH 60V 130A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 25 V
товар відсутній
S29GL512P10FFCR20 S29GL512P10FFCR20 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
товар відсутній
PROF2BTS70041EPRDBTOBO1
PROF2BTS70041EPRDBTOBO1
Виробник: Infineon Technologies
Description: Smart High-Side Power Switch
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7004-1EPR
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3481.42 грн
FF150R12KE3B8BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-311
Packaging: Tray
товар відсутній
CY7C64215-56LFXC CY7C64215.pdf
CY7C64215-56LFXC
Виробник: Infineon Technologies
Description: IC CNTRLR USB FS 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, USB
RAM Size: 1K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY7C642xx
Program Memory Type: FLASH (16kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 50
DigiKey Programmable: Not Verified
товар відсутній
FZ3600R17HE4HOSA2 Infineon-FZ3600R17HE4-DS-v02_05-EN.pdf?fileId=db3a30433e4143bd013e470701954203
FZ3600R17HE4HOSA2
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 7200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3600A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 7200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 21000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 295 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+97600.39 грн
FZ3600R17HE4PHPSA1 Infineon-FZ3600R17HE4P-DS-v03_00-EN.pdf?fileId=5546d462576f34750157dd48123d2822
FZ3600R17HE4PHPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 7200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3600A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 7200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 295 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+99525.28 грн
IPS65R1K0CEAKMA1 Infineon-IPS65R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7a3c90c1e8a
IPS65R1K0CEAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 4.3A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: TO-251
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
товар відсутній
CY8C20536A-24PVXI Infineon-CY8C20XX6A_S_1.8_V_Programmable_CapSense_Controller_with_SmartSense_Auto-tuning_1-33_Buttons_0-6_Sliders-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc6dc04671&utm_source=cypress&utm_medium=referral&utm_camp
CY8C20536A-24PVXI
Виробник: Infineon Technologies
Description: IC MCU 8K FLASH 1K SRAM 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-SSOP
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 363 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+463.2 грн
10+ 400.3 грн
25+ 378.42 грн
100+ 307.79 грн
250+ 292.01 грн
CY95F633KNPMC-G-UNCGE2 Infineon-CY95630H_Series_New_8FX_8-bit_Microcontrollers-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe
CY95F633KNPMC-G-UNCGE2
Виробник: Infineon Technologies
Description: IC MCU 8BIT 12KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+193.59 грн
10+ 167.47 грн
25+ 158.34 грн
80+ 128.78 грн
250+ 122.18 грн
500+ 109.63 грн
1000+ 90.94 грн
2500+ 86.4 грн
Мінімальне замовлення: 2
CY95F634HNPMC-G-UNE2 Infineon-CY95630H_Series_New_8FX_8-bit_Microcontrollers-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe
CY95F634HNPMC-G-UNE2
Виробник: Infineon Technologies
Description: IC MM MCU 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 28
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+231.99 грн
10+ 200.98 грн
25+ 190.01 грн
80+ 154.54 грн
250+ 146.61 грн
500+ 131.56 грн
1000+ 109.13 грн
2500+ 103.68 грн
Мінімальне замовлення: 2
CY9BF406RAPMC-G-UNE1 download
CY9BF406RAPMC-G-UNE1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+518.06 грн
10+ 450.87 грн
25+ 429.89 грн
84+ 350.32 грн
252+ 334.57 грн
504+ 305.05 грн
CY9AF116MAPMC-GNCGE2 Infineon-CY9A110A_Series_32_Bit_ARM_(R)_Cortex_(R)-M3_FM3_Microcontroller-DataSheet-v07_00-CN.pdf?fileId=8ac78c8c7d0d8da4017d0eddeb686295
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
DigiKey Programmable: Not Verified
на замовлення 1190 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+576.84 грн
10+ 502.12 грн
25+ 478.74 грн
119+ 390.1 грн
238+ 372.57 грн
476+ 339.69 грн
952+ 291.01 грн
CYT3DLABHBQ1AESGS Infineon-CYT3DL_TRAVEO_TM_T2G_32-BIT_AUTOMOTIVE_MCU_BASED_ON_ARM_R_CORTEX_R_-M7_SINGLE-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c869190210186f0ccf72f3fd3
CYT3DLABHBQ1AESGS
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.063MB FLSH 216TQFP
Packaging: Tray
Package / Case: 216-QFP
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TQFP
Number of I/O: 108
DigiKey Programmable: Not Verified
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2609.1 грн
10+ 2317.45 грн
25+ 2213.27 грн
80+ 1857.15 грн
KIT1EDBAUXGANTOBO1
Виробник: Infineon Technologies
Description: KIT_1EDB_AUX_GAN
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDB8275F, 1EDN7511B
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
товар відсутній
IMW65R015M2HXKSA1 Infineon-IMW65R015M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63bb7ba52e8
IMW65R015M2HXKSA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 64.2A, 20V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
на замовлення 230 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1647.44 грн
10+ 1163.1 грн
25+ 1054.56 грн
100+ 875.98 грн
IMW65R007M2HXKSA1 IMW65R007M2H.pdf
IMW65R007M2HXKSA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2855.2 грн
10+ 2089.45 грн
25+ 1920.59 грн
IRGS4615DPBF IRGx4615DPbF.pdf
IRGS4615DPBF
Виробник: Infineon Technologies
Description: IGBT 600V 23A 99W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
на замовлення 350 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
237+92.82 грн
Мінімальне замовлення: 237
IRGS4615DPBF IRGx4615DPbF.pdf
IRGS4615DPBF
Виробник: Infineon Technologies
Description: IGBT 600V 23A 99W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
товар відсутній
IRGS4607DPBF IRGx4607DPbF.pdf
IRGS4607DPBF
Виробник: Infineon Technologies
Description: IGBT 600V 11A 58W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
325+67.24 грн
Мінімальне замовлення: 325
IRGS4607DPBF IRGx4607DPbF.pdf
IRGS4607DPBF
Виробник: Infineon Technologies
Description: IGBT 600V 11A 58W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
товар відсутній
IRGSL4B60KD1PBF fundamentals-of-power-semiconductors
IRGSL4B60KD1PBF
Виробник: Infineon Technologies
Description: IGBT NPT 600V 11A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
товар відсутній
IRGS6B60KPBF fundamentals-of-power-semiconductors
IRGS6B60KPBF
Виробник: Infineon Technologies
Description: IGBT 600V 13A 90W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
товар відсутній
S25FL128SAGNFV011 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGNFV011
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
товар відсутній
BAR 67-02V E6327 fundamentals-of-power-semiconductors
BAR 67-02V E6327
Виробник: Infineon Technologies
Description: RF DIODE PIN 150V 250MW SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SC79-2
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
товар відсутній
CY8CKIT-062S2-AI Infineon-CY8CKIT-062S2-AI_Product_Brief-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee43d7df20372
CY8CKIT-062S2-AI
Виробник: Infineon Technologies
Description: PSOC 6 AI EVAL BOARD
Packaging: Box
For Use With/Related Products: BGT60TR13C
Sensitivity: 60GHz
Frequency: 60GHz
Interface: RF
Type: Transceiver; RADAR
Sensor Type: Accelerometer, Gyroscope, Magnetometer, Microphone, Pressure, Radar
Utilized IC / Part: BGT60, BMI270, BMM350, DPS368, IM72D128
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
товар відсутній
FS1150R08A8P3LMCHPSA1 Infineon-FS1150R08A8P3LMC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f15854bae0098
FS1150R08A8P3LMCHPSA1
Виробник: Infineon Technologies
Description: FS1150R08A8P3LMCHPSA1
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 600A
NTC Thermistor: No
Current - Collector (Ic) (Max): 1.15 kA
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 1 kW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V
товар відсутній
FS1150R08A8P3LBCHPSA1
FS1150R08A8P3LBCHPSA1
Виробник: Infineon Technologies
Description: FS1150R08A8P3LBCHPSA1
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: No
Current - Collector (Ic) (Max): 1.15 kA
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 1 kW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V
товар відсутній
KP467XTMA1 KP467.pdf
Виробник: Infineon Technologies
Description: MEMS GROWTH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 6.52PSI ~ 29.01PSI (45kPa ~ 200kPa)
Pressure Type: Absolute
Accuracy: ±0.435PSI (±3kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.25V
Applications: Industrial Automation, Medical Ventilation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Maximum Pressure: 87.02PSI (600kPa)
Grade: Automotive
Qualification: AEC-Q103-002
товар відсутній
KP467XTMA1 KP467.pdf
Виробник: Infineon Technologies
Description: MEMS GROWTH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 6.52PSI ~ 29.01PSI (45kPa ~ 200kPa)
Pressure Type: Absolute
Accuracy: ±0.435PSI (±3kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.25V
Applications: Industrial Automation, Medical Ventilation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Maximum Pressure: 87.02PSI (600kPa)
Grade: Automotive
Qualification: AEC-Q103-002
на замовлення 2173 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+257.07 грн
10+ 222.49 грн
25+ 210.36 грн
100+ 171.09 грн
250+ 162.32 грн
500+ 145.65 грн
1000+ 120.82 грн
Мінімальне замовлення: 2
AIMZH120R020M1TXKSA1 Infineon-AIMZH120R020M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c68ea06f24a7c
AIMZH120R020M1TXKSA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 13.7mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Qualification: AEC-Q101
на замовлення 154 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2317.55 грн
10+ 1983.33 грн
CY7C1041CV33-10BAJXE Infineon-CY7C1041CV33_Automotive_4-Mbit_(256_K_16)_Static_RAM-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecab2cc43b0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
CY7C1041CV33-10BAJXE
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (7x8.5)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товар відсутній
CY7C1041BN-20ZSXA download
CY7C1041BN-20ZSXA
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
CY7C1041CV33-15VC CY7C1041CV33%20RevH.pdf
CY7C1041CV33-15VC
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Tube
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товар відсутній
CY3261-RGB
Виробник: Infineon Technologies
Description: KIT DEMO PSOC RGB LIGHT
Features: Dimmable
Packaging: Bulk
Voltage - Input: 6V
Utilized IC / Part: CY8C27443
Supplied Contents: Board(s), Power Supply
Outputs and Type: 3, Non-Isolated
товар відсутній
CY7C64345-32LQXC download
CY7C64345-32LQXC
Виробник: Infineon Technologies
Description: IC MCU USB ENCORE CONTROL 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 1K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.5V
Controller Series: CY7C643xx
Program Memory Type: FLASH (16kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 25
DigiKey Programmable: Not Verified
товар відсутній
CY7C64345-32LQXCT download
CY7C64345-32LQXCT
Виробник: Infineon Technologies
Description: IC MCU USB ENCORE CONTROL 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 1K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.5V
Controller Series: CY7C643xx
Program Memory Type: FLASH (16kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 25
DigiKey Programmable: Not Verified
товар відсутній
CY7C64343-32LQXCT download
CY7C64343-32LQXCT
Виробник: Infineon Technologies
Description: IC MCU USB ENCORE CONTROL 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 1K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.5V
Controller Series: CY7C643xx
Program Memory Type: FLASH (8kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 25
DigiKey Programmable: Not Verified
товар відсутній
S29PL127J60TFID30H
S29PL127J60TFID30H
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 60 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
товар відсутній
SKP02N60XKSA1 fundamentals-of-power-semiconductors
SKP02N60XKSA1
Виробник: Infineon Technologies
Description: IGBT 600V 6A 30W TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/259ns
Switching Energy: 64µJ
Test Condition: 400V, 2A, 118Ohm, 15V
Gate Charge: 14 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 30 W
товар відсутній
IPDD60R037CM8XTMA1
IPDD60R037CM8XTMA1
Виробник: Infineon Technologies
Description: IPDD60R037CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HDSOP-10-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V
товар відсутній
IPDD60R037CM8XTMA1
IPDD60R037CM8XTMA1
Виробник: Infineon Technologies
Description: IPDD60R037CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HDSOP-10-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V
на замовлення 1101 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+536.08 грн
10+ 350.95 грн
100+ 256.95 грн
500+ 211.09 грн
IPDD60R180CM8XTMA1
IPDD60R180CM8XTMA1
Виробник: Infineon Technologies
Description: IPDD60R180CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 169W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-HDSOP-10-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
товар відсутній
IPDD60R180CM8XTMA1
IPDD60R180CM8XTMA1
Виробник: Infineon Technologies
Description: IPDD60R180CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 169W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-HDSOP-10-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
товар відсутній
ISZ520N20NM6ATMA1 Infineon-ISZ520N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d3286fe540f2f
ISZ520N20NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 47.8mOhm @ 15A, 15V
Power Dissipation (Max): 2.5W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 31µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
товар відсутній
ISZ520N20NM6ATMA1 Infineon-ISZ520N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d3286fe540f2f
ISZ520N20NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 47.8mOhm @ 15A, 15V
Power Dissipation (Max): 2.5W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 31µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
на замовлення 4974 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+180.26 грн
10+ 112.08 грн
100+ 76.92 грн
500+ 58.04 грн
1000+ 53.49 грн
2000+ 49.66 грн
Мінімальне замовлення: 2
XC836MT2FRAABLXUMA1 Orderable_Part_Number_OPN_Translation_Table_Web.pdf
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28TSSOP
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Number of I/O: 25
DigiKey Programmable: Not Verified
товар відсутній
LTA2102XUMA1
Виробник: Infineon Technologies
Description: DIGITAL CHARGER/ADAPTER
Packaging: Tape & Reel (TR)
товар відсутній
CYPD727268LQXQTXUMA1
Виробник: Infineon Technologies
Description: CHARGER_ADAPTER
Packaging: Tape & Reel (TR)
товар відсутній
IQDH88N06LM5CGATMA1 Infineon-IQDH88N06LM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188b39789f50841
IQDH88N06LM5CGATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+143.21 грн
Мінімальне замовлення: 5000
IQDH88N06LM5CGATMA1 Infineon-IQDH88N06LM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188b39789f50841
IQDH88N06LM5CGATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+296.26 грн
10+ 256.45 грн
25+ 242.42 грн
100+ 197.16 грн
250+ 187.05 грн
500+ 167.84 грн
1000+ 139.23 грн
2500+ 132.27 грн
Мінімальне замовлення: 2
CY62167ELL-45ZXI Infineon-CY62167E_16-Mbit_(1_M_16_2_M_8)_Static_RAM-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebed5b432bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62167ELL-45ZXI
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
на замовлення 256 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1136.44 грн
10+ 1012.99 грн
25+ 999.22 грн
40+ 925.97 грн
96+ 811.48 грн
CY62167ELL-45ZXIT Infineon-CY62167E_16-Mbit_(1_M_16_2_M_8)_Static_RAM-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebed5b432bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62167ELL-45ZXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1136.44 грн
10+ 1012.99 грн
25+ 999.22 грн
50+ 925.96 грн
100+ 811.49 грн
250+ 776.69 грн
500+ 758.99 грн
CY62167G-45BVXIT Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral&
CY62167G-45BVXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
товар відсутній
CY62167G30-55BVXE download
CY62167G30-55BVXE
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
товар відсутній
CY62167EV18LL-55BVXIT Infineon-CY62167EV18_MoBL_16-Mbit_(1_M_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe53a531d2&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62167EV18LL-55BVXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.25V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
товар відсутній
CY62167GE18-55BVXI Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral&
CY62167GE18-55BVXI
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
товар відсутній
CY62167GE18-55BVXIT Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral&
CY62167GE18-55BVXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
товар відсутній
T1060N65TOFXPSA1 Infineon-T1060N-DS-v02_02-en_de.pdf?fileId=db3a30433c1a8752013c43c707cf3655
T1060N65TOFXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 6500V 1650A DO200AD
Packaging: Tray
Package / Case: TO-200AE
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 22500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1487 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 1650 A
Voltage - Off State: 6.5 kV
товар відсутній
IRF60DM206 irf60dm206.pdf?fileId=5546d462533600a4015355e433aa19ca
IRF60DM206
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 130A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 25 V
товар відсутній
IRF60DM206 irf60dm206.pdf?fileId=5546d462533600a4015355e433aa19ca
IRF60DM206
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 130A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 25 V
товар відсутній
S29GL512P10FFCR20 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL512P10FFCR20
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
товар відсутній
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