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TC1784F320F180EPBAKXUMA1 TC1784F320F180EPBAKXUMA1 Infineon Technologies TC1784_DS_v111.pdf?fileId=db3a304336ca04c90136ca92f1cd00a6 Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 8x10b, 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.235V ~ 3.47V
Connectivity: ASC, CANbus, EBI/EMI, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 91
DigiKey Programmable: Not Verified
на замовлення 966 шт:
термін постачання 21-31 дні (днів)
1+1926.46 грн
10+ 1711.11 грн
25+ 1634.18 грн
100+ 1371.24 грн
250+ 1308.09 грн
500+ 1244.94 грн
IR2301PBF IR2301PBF Infineon Technologies ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
товар відсутній
CY7C68320C-56LFXC CY7C68320C-56LFXC Infineon Technologies CY7C68300C%2C301C%2C320C%2C321C.pdf Description: IC USB 2.0 BRIDGE AT2LP 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Function: Bridge, USB to ATA
Interface: ATA
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 50mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
DigiKey Programmable: Not Verified
на замовлення 55 шт:
термін постачання 21-31 дні (днів)
1+741.43 грн
10+ 644.46 грн
25+ 614.49 грн
CY7C68003-20FNXI CY7C68003-20FNXI Infineon Technologies CY7C68003.pdf Description: IC TRANSCEIVER FULL 1/1 20WLCSP
Packaging: Tray
Package / Case: 20-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Number of Drivers/Receivers: 1/1
Protocol: USB 2.0
Supplier Device Package: 20-WLCSP (2.14x1.76)
Duplex: Full
товар відсутній
CY7C68003-20FNXIT CY7C68003-20FNXIT Infineon Technologies CY7C68003.pdf Description: IC TRANSCEIVER FULL 1/1 20WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 20-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Number of Drivers/Receivers: 1/1
Protocol: USB 2.0
Supplier Device Package: 20-WLCSP (2.14x1.76)
Duplex: Full
товар відсутній
IPB091N06N G IPB091N06N G Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CHAN D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: PG-TO263-3
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 30 V
товар відсутній
IPP091N06N G IPP091N06N G Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CHAN TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: PG-TO220-3
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 30 V
товар відсутній
CY7C1515AV18-250BZC CY7C1515AV18-250BZC Infineon Technologies cy7c15%2811%2C13%2C15%2C26%29av18_8.pdf Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
товар відсутній
CY7C68013A-128AXI CY7C68013A-128AXI Infineon Technologies download Description: IC MCU USB PERIPH HI SPD 128LQFP
Packaging: Bulk
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 128-TQFP (14x20)
Number of I/O: 40
DigiKey Programmable: Not Verified
на замовлення 128 шт:
термін постачання 21-31 дні (днів)
9+2403.33 грн
Мінімальне замовлення: 9
T1040N20TOFVTXPSA1 Infineon Technologies T1040N.pdf Description: SCR MODULE 2200V 2200A DO200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1040 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 2200 A
Voltage - Off State: 2.2 kV
товар відсутній
IRSM515-015DA2 Infineon Technologies irsm505-015.pdf?fileId=5546d462533600a40153567bcfc12864 Description: IC HALF BRIDGE DRIVER 1.2A 23DIP
Features: Bootstrap Circuit
Packaging: Bulk
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 5Ohm
Applications: AC Motors
Current - Output / Channel: 1.2A
Current - Peak Output: 9A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIPA
Fault Protection: UVLO
Load Type: Inductive
на замовлення 5280 шт:
термін постачання 21-31 дні (днів)
72+308.94 грн
Мінімальне замовлення: 72
IRSM515-015DA2 Infineon Technologies irsm505-015.pdf?fileId=5546d462533600a40153567bcfc12864 Description: IC HALF BRIDGE DRIVER 1.2A 23DIP
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 5Ohm
Applications: AC Motors
Current - Output / Channel: 1.2A
Current - Peak Output: 9A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIPA
Fault Protection: UVLO
Load Type: Inductive
товар відсутній
CY7C68013A-56BAXC CY7C68013A-56BAXC Infineon Technologies download Description: IC MCU USB PERIPH HI SPD 56VFBGA
Packaging: Bulk
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 56-VFBGA (5x5)
Number of I/O: 24
DigiKey Programmable: Not Verified
на замовлення 85 шт:
термін постачання 21-31 дні (днів)
25+875.73 грн
Мінімальне замовлення: 25
CY7C68013A-100AXI CY7C68013A-100AXI Infineon Technologies download Description: IC MCU USB PERIPH HI SPD 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 100-TQFP (14x20)
Number of I/O: 40
DigiKey Programmable: Not Verified
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
9+2350.55 грн
Мінімальне замовлення: 9
PSB7530ZDW PSB7530ZDW Infineon Technologies Description: PSB7530ZDW
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 2880 шт:
термін постачання 21-31 дні (днів)
50+449.1 грн
Мінімальне замовлення: 50
PSB7530 Infineon Technologies Description: PSB7530
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 538 шт:
термін постачання 21-31 дні (днів)
50+449.1 грн
Мінімальне замовлення: 50
PSB7531ZDW PSB7531ZDW Infineon Technologies Description: LANTIQ PSB7531 TELECOMS IC
Packaging: Bulk
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
32+691.27 грн
Мінімальне замовлення: 32
PVA3054NPBF PVA3054NPBF Infineon Technologies pva30n.pdf?fileId=5546d462533600a4015356839c762923 Description: SSR RELAY SPST-NO 50MA 0-300V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 50 mA
Supplier Device Package: 8-DIP Modified
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 160 Ohms
на замовлення 1815 шт:
термін постачання 21-31 дні (днів)
1+514.14 грн
10+ 464.23 грн
25+ 412.62 грн
50+ 367.85 грн
100+ 348.5 грн
250+ 340.87 грн
SPW20N60CFDFKSA1 SPW20N60CFDFKSA1 Infineon Technologies SPW20N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c02c5464d Description: MOSFET N-CH 650V 20.7A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 360 шт:
термін постачання 21-31 дні (днів)
87+244.28 грн
Мінімальне замовлення: 87
AIMZH120R060M1TXKSA1 AIMZH120R060M1TXKSA1 Infineon Technologies Infineon-AIMZH120R060M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c68e9f6574a76 Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.3mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V
Qualification: AEC-Q101
на замовлення 191 шт:
термін постачання 21-31 дні (днів)
1+1024.36 грн
10+ 869.29 грн
AUIRGP4062D-E AUIRGP4062D-E Infineon Technologies auirgp4062d.pdf?fileId=5546d462533600a4015355ba52cd1521 Description: IGBT 600V 48A TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: PG-TO247AD
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
на замовлення 354 шт:
термін постачання 21-31 дні (днів)
46+467.44 грн
Мінімальне замовлення: 46
IRG7PH35UD-EP IRG7PH35UD-EP Infineon Technologies irg7ph35udpbf.pdf?fileId=5546d462533600a40153564d601323ad Description: IGBT 1200V 50A COPAK247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 1.06mJ (on), 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 180 W
на замовлення 436 шт:
термін постачання 21-31 дні (днів)
65+338.39 грн
Мінімальне замовлення: 65
IRG7PH35UD-EP IRG7PH35UD-EP Infineon Technologies irg7ph35udpbf.pdf?fileId=5546d462533600a40153564d601323ad Description: IGBT 1200V 50A COPAK247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 1.06mJ (on), 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 180 W
товар відсутній
IRG7PH28UD1PBF IRG7PH28UD1PBF Infineon Technologies IRG7PH28UD1%28M%29PbF.pdf Description: IGBT 1200V 30A 115W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: -/229ns
Switching Energy: 543µJ (off)
Test Condition: 600V, 15A, 22Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 115 W
товар відсутній
IRG7PH35UD1MPBF IRG7PH35UD1MPBF Infineon Technologies IRG7PH35UD1MPbF.pdf Description: IGBT 1200V 50A 179W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: -/160ns
Switching Energy: 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 179 W
товар відсутній
IRG7PH50K10D-EPBF IRG7PH50K10D-EPBF Infineon Technologies IRG7PH50K10D%28-E%29PbF.pdf Description: IGBT 1200V 90A 400W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 90ns/340ns
Switching Energy: 2.3mJ (on), 1.6mJ (off)
Test Condition: 600V, 35A, 5Ohm, 15V
Gate Charge: 300 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 400 W
товар відсутній
IRG7PSH54K10DPBF IRG7PSH54K10DPBF Infineon Technologies IRG7PSH54K10DPbF.pdf Description: IGBT 1200V 120A 520W TO274AA
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Supplier Device Package: SUPER-247™ (TO-274AA)
Td (on/off) @ 25°C: 110ns/490ns
Switching Energy: 4.8mJ (on), 2.8mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 435 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 520 W
товар відсутній
IRG7PK35UD1-EPBF IRG7PK35UD1-EPBF Infineon Technologies irg7pk35ud1pbf.pdf Description: IGBT 1400V 40A 167W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: -/150ns
Switching Energy: 650µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 167 W
товар відсутній
IRG7PK35UD1PbF IRG7PK35UD1PbF Infineon Technologies irg7pk35ud1pbf.pdf Description: IGBT 1400V 40A 167W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 20A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: -/150ns
Switching Energy: 650µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 167 W
товар відсутній
BGA7M1N6E6327XTSA1 BGA7M1N6E6327XTSA1 Infineon Technologies Infineon-BGA7M1N6-DS-v03_01-en.pdf?fileId=db3a304344e406b50144e46550b502d7 Description: IC AMP LTE 1.8GHZ-2.2GHZ TSNP6
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.8GHz ~ 2.2GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.3V
Gain: 13dB
Current - Supply: 4.4mA
Noise Figure: 0.6dB
P1dB: -7dBm
Supplier Device Package: PG-TSNP-6-2
на замовлення 855000 шт:
термін постачання 21-31 дні (днів)
702+31.55 грн
Мінімальне замовлення: 702
BGA777L7E6327XTSA1 BGA777L7E6327XTSA1 Infineon Technologies BGA777L7.pdf Description: IC AMP UMTS 2.3/2.7GHZ TSLP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz, 2.7GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 16.8dB
Current - Supply: 10mA
Noise Figure: 1.2dB
P1dB: -11dBm
Test Frequency: 2.3GHz
Supplier Device Package: PG-TSLP-7-1
на замовлення 232500 шт:
термін постачання 21-31 дні (днів)
799+27.89 грн
Мінімальне замовлення: 799
BGA 700L16 E6327 BGA 700L16 E6327 Infineon Technologies BGA700L16_PB.pdf Description: IC AMP GSM 500MHZ-6GHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: GSM, DCS, PCS
Voltage - Supply: 2.75V
Gain: 17.5dB
Noise Figure: 0.95dB
P1dB: -20dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSLP-7-1
товар відсутній
IPTA60R180CM8XTMA1 IPTA60R180CM8XTMA1 Infineon Technologies Description: IPTA60R180CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerLSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-LHSOF-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
товар відсутній
IPTA60R180CM8XTMA1 IPTA60R180CM8XTMA1 Infineon Technologies Description: IPTA60R180CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 4-PowerLSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-LHSOF-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
3+146.56 грн
10+ 117.13 грн
Мінімальне замовлення: 3
CY8C4128LQI-BL543 CY8C4128LQI-BL543 Infineon Technologies Infineon-PSoC_4_PSoC_4100_BLE_Family_Datasheet_Programmable_System-on-Chip-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee5e6f46dbe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 8kB ROM, 32kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 8Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
товар відсутній
CY8C4248FNI-BL573T Infineon Technologies Infineon-PSoC_4_4200_BLE_Family_Datasheet_Programmable_System-on-Chip-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee5f2a26ddd Description: IC MCU 32BIT 256KB FLASH 76WLCSP
Packaging: Cut Tape (CT)
Package / Case: 76-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b; D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, CapSense, DMA , LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 76-WLCSP (4.04x3.87)
Number of I/O: 36
DigiKey Programmable: Not Verified
товар відсутній
IRF6712STRPBF IRF6712STRPBF Infineon Technologies irf6712spbf.pdf?fileId=5546d462533600a4015355ecf4331a7c Description: MOSFET N-CH 25V 17A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SQ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 17A, 10V
Power Dissipation (Max): 2.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 50µA
Supplier Device Package: DIRECTFET™ SQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 13 V
товар відсутній
CY8C22645-24PVXA CY8C22645-24PVXA Infineon Technologies download Description: IC MCU 8BIT 16KB FLASH 48SSOP
Packaging: Bulk
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 3x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-SSOP
Number of I/O: 38
DigiKey Programmable: Not Verified
на замовлення 4586 шт:
термін постачання 21-31 дні (днів)
62+359.58 грн
Мінімальне замовлення: 62
DZ800S17K3HOSA1 DZ800S17K3HOSA1 Infineon Technologies Infineon-DZ800S17K3-DS-v02_02-en_de.pdf?fileId=db3a304317a748360117c9d5c27b2974 Description: DIODE MODULE GP 1700V AG62MM-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Supplier Device Package: AG-62MM-2
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 800 A
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
1+11882.43 грн
10+ 10716.83 грн
56DN06B02ELEMXPSA1 56DN06B02ELEMXPSA1 Infineon Technologies Infineon-56DN06B02-DataSheet-v03_01-EN.pdf?fileId=5546d4627506bb320175079eeb79038e Description: DIODE GP 600V 11140A E-EUPEC-0
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 11140A
Supplier Device Package: E-EUPEC-0
Operating Temperature - Junction: 180°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 8000 A
Current - Reverse Leakage @ Vr: 60 mA @ 600 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
1+23257.78 грн
CY8C3665LTI-044 CY8C3665LTI-044 Infineon Technologies #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88 Description: IC MCU 8BIT 32KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
на замовлення 765 шт:
термін постачання 21-31 дні (днів)
1+999.28 грн
10+ 884.01 грн
25+ 847.4 грн
80+ 700.66 грн
260+ 666.28 грн
520+ 623.29 грн
BAS21E6433HTMA1 BAS21E6433HTMA1 Infineon Technologies bas21series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141bed353f040f Description: DIODE GEN PURP 200V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
товар відсутній
BC849CE6327HTSA1 BC849CE6327HTSA1 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 30V 0.1A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
8689+2.11 грн
Мінімальне замовлення: 8689
KIT2K5WCCMTOLLTOBO1 KIT2K5WCCMTOLLTOBO1 Infineon Technologies Infineon-General_description_evaluation_kit_KIT_2K5W_CCM_TOLL-ATI-v01_00-EN.pdf?fileId=5546d462602a9dc80160452044a718a7 Description: TO LEADLESS ADAPTER
Packaging: Bulk
Accessory Type: Upgrade Kit
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+7139.18 грн
REF3K3WTPSICTOLLTOBO1 REF3K3WTPSICTOLLTOBO1 Infineon Technologies Description: REF3K3WTPSICTOLLTOBO1
Packaging: Box
Function: Power Factor Correction
Type: Power Management
Contents: Board(s)
Supplied Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU, 32-Bit
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+42744.94 грн
CY8C20324-12LQXI CY8C20324-12LQXI Infineon Technologies Infineon-CY8C20224_CY8C20324_CY8C20424_CY8C20524_CAPSENSE_PSOC_PROGRAMMABLE_SYSTEM_ON_CHIP-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecae11743f6 Description: IC MCU 8BIT 8KB FLASH 24SQFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
товар відсутній
AUIRF1018ES AUIRF1018ES Infineon Technologies auirf1018es.pdf?fileId=5546d462533600a4015355a8a2491368 Description: MOSFET N-CH 60V 79A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
товар відсутній
BTG7016A1EPWDBTOBO1 Infineon Technologies Description: BTG7016A-1EPW DB
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7016A-1EPW
Platform: Arduino
товар відсутній
AUIRFR4105 AUIRFR4105 Infineon Technologies AUIRFR4105.pdf Description: MOSFET N-CH 55V 20A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
товар відсутній
IMW65R040M2HXKSA1 IMW65R040M2HXKSA1 Infineon Technologies Infineon-IMW65R040M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd64d52095328 Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
на замовлення 215 шт:
термін постачання 21-31 дні (днів)
1+863.69 грн
10+ 584.91 грн
25+ 521.27 грн
100+ 422.42 грн
FS500R17OE4DBOSA1 FS500R17OE4DBOSA1 Infineon Technologies Infineon-FS500R17OE4D-DS-v03_00-en_de.pdf?fileId=5546d46145f1f3a40145fb209c810fee Description: IGBT MOD 1700V 740A 3000W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 740 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3000 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 40 nF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+55820.24 грн
TLS805B1LDVXUMA1 TLS805B1LDVXUMA1 Infineon Technologies Infineon-TLS805B1-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc1015969ed6e11424b Description: IC REG LIN POS ADJ 50MA TSON-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Max): 41.7V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 50mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 11 µA
Qualification: AEC-Q100
товар відсутній
IPP029N06NXKSA1 IPP029N06NXKSA1 Infineon Technologies Infineon-IPP029N06N-DS-v02_06-EN.pdf?fileId=db3a3043345a30bc013465bff03f62ec Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 75µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5125 pF @ 30 V
товар відсутній
S25HL512TFABHB010 Infineon Technologies en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24 Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товар відсутній
CY9AF144NBPMC-G-JNE2 CY9AF144NBPMC-G-JNE2 Infineon Technologies Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 288KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
товар відсутній
T2600N16TOFVTXPSA1 T2600N16TOFVTXPSA1 Infineon Technologies Infineon-T2600N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6f5ff7deb Description: STD THYR/DIODEN DISC BG-T10035-1
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2610 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 1.8 kV
товар відсутній
T2600N18TOFVTXPSA1 T2600N18TOFVTXPSA1 Infineon Technologies Infineon-T2600N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6f5ff7deb Description: STD THYR/DIODEN DISC BG-T10026K-
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2610 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 1.8 kV
товар відсутній
T3800N18TOFVTXPSA1 T3800N18TOFVTXPSA1 Infineon Technologies Infineon-T3800N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6e7bc7de7 Description: STD THYR/DIODEN DISC BG-T11126K-
Packaging: Tray
Package / Case: TO-200AE
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3800 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 5970 A
Voltage - Off State: 1.8 kV
товар відсутній
IDH03SG60CXKSA2 IDH03SG60CXKSA2 Infineon Technologies IDH03SG60C_rev2.1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30431ff98815012019e44a933f33 Description: DIODE SIL CARB 600V 3A TO220-2-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
товар відсутній
CYT2B74CADR0AZSGST CYT2B74CADR0AZSGST Infineon Technologies Description: IC MCU 32BT 1.0625MB FLSH 80LQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
DigiKey Programmable: Not Verified
товар відсутній
TC1784F320F180EPBAKXUMA1 TC1784_DS_v111.pdf?fileId=db3a304336ca04c90136ca92f1cd00a6
TC1784F320F180EPBAKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 8x10b, 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.235V ~ 3.47V
Connectivity: ASC, CANbus, EBI/EMI, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 91
DigiKey Programmable: Not Verified
на замовлення 966 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1926.46 грн
10+ 1711.11 грн
25+ 1634.18 грн
100+ 1371.24 грн
250+ 1308.09 грн
500+ 1244.94 грн
IR2301PBF ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc
IR2301PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
товар відсутній
CY7C68320C-56LFXC CY7C68300C%2C301C%2C320C%2C321C.pdf
CY7C68320C-56LFXC
Виробник: Infineon Technologies
Description: IC USB 2.0 BRIDGE AT2LP 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Function: Bridge, USB to ATA
Interface: ATA
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 50mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
DigiKey Programmable: Not Verified
на замовлення 55 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+741.43 грн
10+ 644.46 грн
25+ 614.49 грн
CY7C68003-20FNXI CY7C68003.pdf
CY7C68003-20FNXI
Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 20WLCSP
Packaging: Tray
Package / Case: 20-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Number of Drivers/Receivers: 1/1
Protocol: USB 2.0
Supplier Device Package: 20-WLCSP (2.14x1.76)
Duplex: Full
товар відсутній
CY7C68003-20FNXIT CY7C68003.pdf
CY7C68003-20FNXIT
Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 20WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 20-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Number of Drivers/Receivers: 1/1
Protocol: USB 2.0
Supplier Device Package: 20-WLCSP (2.14x1.76)
Duplex: Full
товар відсутній
IPB091N06N G Part_Number_Guide_Web.pdf
IPB091N06N G
Виробник: Infineon Technologies
Description: MOSFET N-CHAN D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: PG-TO263-3
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 30 V
товар відсутній
IPP091N06N G Part_Number_Guide_Web.pdf
IPP091N06N G
Виробник: Infineon Technologies
Description: MOSFET N-CHAN TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: PG-TO220-3
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 30 V
товар відсутній
CY7C1515AV18-250BZC cy7c15%2811%2C13%2C15%2C26%29av18_8.pdf
CY7C1515AV18-250BZC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
товар відсутній
CY7C68013A-128AXI download
CY7C68013A-128AXI
Виробник: Infineon Technologies
Description: IC MCU USB PERIPH HI SPD 128LQFP
Packaging: Bulk
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 128-TQFP (14x20)
Number of I/O: 40
DigiKey Programmable: Not Verified
на замовлення 128 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+2403.33 грн
Мінімальне замовлення: 9
T1040N20TOFVTXPSA1 T1040N.pdf
Виробник: Infineon Technologies
Description: SCR MODULE 2200V 2200A DO200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1040 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 2200 A
Voltage - Off State: 2.2 kV
товар відсутній
IRSM515-015DA2 irsm505-015.pdf?fileId=5546d462533600a40153567bcfc12864
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.2A 23DIP
Features: Bootstrap Circuit
Packaging: Bulk
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 5Ohm
Applications: AC Motors
Current - Output / Channel: 1.2A
Current - Peak Output: 9A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIPA
Fault Protection: UVLO
Load Type: Inductive
на замовлення 5280 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
72+308.94 грн
Мінімальне замовлення: 72
IRSM515-015DA2 irsm505-015.pdf?fileId=5546d462533600a40153567bcfc12864
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.2A 23DIP
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 5Ohm
Applications: AC Motors
Current - Output / Channel: 1.2A
Current - Peak Output: 9A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIPA
Fault Protection: UVLO
Load Type: Inductive
товар відсутній
CY7C68013A-56BAXC download
CY7C68013A-56BAXC
Виробник: Infineon Technologies
Description: IC MCU USB PERIPH HI SPD 56VFBGA
Packaging: Bulk
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 56-VFBGA (5x5)
Number of I/O: 24
DigiKey Programmable: Not Verified
на замовлення 85 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
25+875.73 грн
Мінімальне замовлення: 25
CY7C68013A-100AXI download
CY7C68013A-100AXI
Виробник: Infineon Technologies
Description: IC MCU USB PERIPH HI SPD 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 100-TQFP (14x20)
Number of I/O: 40
DigiKey Programmable: Not Verified
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+2350.55 грн
Мінімальне замовлення: 9
PSB7530ZDW
PSB7530ZDW
Виробник: Infineon Technologies
Description: PSB7530ZDW
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 2880 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
50+449.1 грн
Мінімальне замовлення: 50
PSB7530
Виробник: Infineon Technologies
Description: PSB7530
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 538 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
50+449.1 грн
Мінімальне замовлення: 50
PSB7531ZDW
PSB7531ZDW
Виробник: Infineon Technologies
Description: LANTIQ PSB7531 TELECOMS IC
Packaging: Bulk
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
32+691.27 грн
Мінімальне замовлення: 32
PVA3054NPBF pva30n.pdf?fileId=5546d462533600a4015356839c762923
PVA3054NPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 50MA 0-300V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 50 mA
Supplier Device Package: 8-DIP Modified
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 160 Ohms
на замовлення 1815 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+514.14 грн
10+ 464.23 грн
25+ 412.62 грн
50+ 367.85 грн
100+ 348.5 грн
250+ 340.87 грн
SPW20N60CFDFKSA1 SPW20N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c02c5464d
SPW20N60CFDFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 20.7A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 360 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
87+244.28 грн
Мінімальне замовлення: 87
AIMZH120R060M1TXKSA1 Infineon-AIMZH120R060M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c68e9f6574a76
AIMZH120R060M1TXKSA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.3mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V
Qualification: AEC-Q101
на замовлення 191 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1024.36 грн
10+ 869.29 грн
AUIRGP4062D-E auirgp4062d.pdf?fileId=5546d462533600a4015355ba52cd1521
AUIRGP4062D-E
Виробник: Infineon Technologies
Description: IGBT 600V 48A TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: PG-TO247AD
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
на замовлення 354 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
46+467.44 грн
Мінімальне замовлення: 46
IRG7PH35UD-EP irg7ph35udpbf.pdf?fileId=5546d462533600a40153564d601323ad
IRG7PH35UD-EP
Виробник: Infineon Technologies
Description: IGBT 1200V 50A COPAK247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 1.06mJ (on), 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 180 W
на замовлення 436 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
65+338.39 грн
Мінімальне замовлення: 65
IRG7PH35UD-EP irg7ph35udpbf.pdf?fileId=5546d462533600a40153564d601323ad
IRG7PH35UD-EP
Виробник: Infineon Technologies
Description: IGBT 1200V 50A COPAK247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 1.06mJ (on), 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 180 W
товар відсутній
IRG7PH28UD1PBF IRG7PH28UD1%28M%29PbF.pdf
IRG7PH28UD1PBF
Виробник: Infineon Technologies
Description: IGBT 1200V 30A 115W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: -/229ns
Switching Energy: 543µJ (off)
Test Condition: 600V, 15A, 22Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 115 W
товар відсутній
IRG7PH35UD1MPBF IRG7PH35UD1MPbF.pdf
IRG7PH35UD1MPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 50A 179W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: -/160ns
Switching Energy: 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 179 W
товар відсутній
IRG7PH50K10D-EPBF IRG7PH50K10D%28-E%29PbF.pdf
IRG7PH50K10D-EPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 90A 400W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 90ns/340ns
Switching Energy: 2.3mJ (on), 1.6mJ (off)
Test Condition: 600V, 35A, 5Ohm, 15V
Gate Charge: 300 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 400 W
товар відсутній
IRG7PSH54K10DPBF IRG7PSH54K10DPbF.pdf
IRG7PSH54K10DPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 120A 520W TO274AA
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Supplier Device Package: SUPER-247™ (TO-274AA)
Td (on/off) @ 25°C: 110ns/490ns
Switching Energy: 4.8mJ (on), 2.8mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 435 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 520 W
товар відсутній
IRG7PK35UD1-EPBF irg7pk35ud1pbf.pdf
IRG7PK35UD1-EPBF
Виробник: Infineon Technologies
Description: IGBT 1400V 40A 167W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: -/150ns
Switching Energy: 650µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 167 W
товар відсутній
IRG7PK35UD1PbF irg7pk35ud1pbf.pdf
IRG7PK35UD1PbF
Виробник: Infineon Technologies
Description: IGBT 1400V 40A 167W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 20A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: -/150ns
Switching Energy: 650µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 167 W
товар відсутній
BGA7M1N6E6327XTSA1 Infineon-BGA7M1N6-DS-v03_01-en.pdf?fileId=db3a304344e406b50144e46550b502d7
BGA7M1N6E6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP LTE 1.8GHZ-2.2GHZ TSNP6
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.8GHz ~ 2.2GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.3V
Gain: 13dB
Current - Supply: 4.4mA
Noise Figure: 0.6dB
P1dB: -7dBm
Supplier Device Package: PG-TSNP-6-2
на замовлення 855000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
702+31.55 грн
Мінімальне замовлення: 702
BGA777L7E6327XTSA1 BGA777L7.pdf
BGA777L7E6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP UMTS 2.3/2.7GHZ TSLP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz, 2.7GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 16.8dB
Current - Supply: 10mA
Noise Figure: 1.2dB
P1dB: -11dBm
Test Frequency: 2.3GHz
Supplier Device Package: PG-TSLP-7-1
на замовлення 232500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
799+27.89 грн
Мінімальне замовлення: 799
BGA 700L16 E6327 BGA700L16_PB.pdf
BGA 700L16 E6327
Виробник: Infineon Technologies
Description: IC AMP GSM 500MHZ-6GHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: GSM, DCS, PCS
Voltage - Supply: 2.75V
Gain: 17.5dB
Noise Figure: 0.95dB
P1dB: -20dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSLP-7-1
товар відсутній
IPTA60R180CM8XTMA1
IPTA60R180CM8XTMA1
Виробник: Infineon Technologies
Description: IPTA60R180CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerLSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-LHSOF-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
товар відсутній
IPTA60R180CM8XTMA1
IPTA60R180CM8XTMA1
Виробник: Infineon Technologies
Description: IPTA60R180CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 4-PowerLSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-LHSOF-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+146.56 грн
10+ 117.13 грн
Мінімальне замовлення: 3
CY8C4128LQI-BL543 Infineon-PSoC_4_PSoC_4100_BLE_Family_Datasheet_Programmable_System-on-Chip-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee5e6f46dbe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
CY8C4128LQI-BL543
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 8kB ROM, 32kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 8Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
товар відсутній
CY8C4248FNI-BL573T Infineon-PSoC_4_4200_BLE_Family_Datasheet_Programmable_System-on-Chip-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee5f2a26ddd
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 76WLCSP
Packaging: Cut Tape (CT)
Package / Case: 76-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b; D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, CapSense, DMA , LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 76-WLCSP (4.04x3.87)
Number of I/O: 36
DigiKey Programmable: Not Verified
товар відсутній
IRF6712STRPBF irf6712spbf.pdf?fileId=5546d462533600a4015355ecf4331a7c
IRF6712STRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 17A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SQ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 17A, 10V
Power Dissipation (Max): 2.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 50µA
Supplier Device Package: DIRECTFET™ SQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 13 V
товар відсутній
CY8C22645-24PVXA download
CY8C22645-24PVXA
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 48SSOP
Packaging: Bulk
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 3x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-SSOP
Number of I/O: 38
DigiKey Programmable: Not Verified
на замовлення 4586 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
62+359.58 грн
Мінімальне замовлення: 62
DZ800S17K3HOSA1 Infineon-DZ800S17K3-DS-v02_02-en_de.pdf?fileId=db3a304317a748360117c9d5c27b2974
DZ800S17K3HOSA1
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1700V AG62MM-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Supplier Device Package: AG-62MM-2
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 800 A
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+11882.43 грн
10+ 10716.83 грн
56DN06B02ELEMXPSA1 Infineon-56DN06B02-DataSheet-v03_01-EN.pdf?fileId=5546d4627506bb320175079eeb79038e
56DN06B02ELEMXPSA1
Виробник: Infineon Technologies
Description: DIODE GP 600V 11140A E-EUPEC-0
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 11140A
Supplier Device Package: E-EUPEC-0
Operating Temperature - Junction: 180°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 8000 A
Current - Reverse Leakage @ Vr: 60 mA @ 600 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+23257.78 грн
CY8C3665LTI-044 #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88
CY8C3665LTI-044
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
на замовлення 765 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+999.28 грн
10+ 884.01 грн
25+ 847.4 грн
80+ 700.66 грн
260+ 666.28 грн
520+ 623.29 грн
BAS21E6433HTMA1 bas21series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141bed353f040f
BAS21E6433HTMA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 200V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
товар відсутній
BC849CE6327HTSA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC849CE6327HTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 30V 0.1A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8689+2.11 грн
Мінімальне замовлення: 8689
KIT2K5WCCMTOLLTOBO1 Infineon-General_description_evaluation_kit_KIT_2K5W_CCM_TOLL-ATI-v01_00-EN.pdf?fileId=5546d462602a9dc80160452044a718a7
KIT2K5WCCMTOLLTOBO1
Виробник: Infineon Technologies
Description: TO LEADLESS ADAPTER
Packaging: Bulk
Accessory Type: Upgrade Kit
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+7139.18 грн
REF3K3WTPSICTOLLTOBO1
REF3K3WTPSICTOLLTOBO1
Виробник: Infineon Technologies
Description: REF3K3WTPSICTOLLTOBO1
Packaging: Box
Function: Power Factor Correction
Type: Power Management
Contents: Board(s)
Supplied Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU, 32-Bit
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+42744.94 грн
CY8C20324-12LQXI Infineon-CY8C20224_CY8C20324_CY8C20424_CY8C20524_CAPSENSE_PSOC_PROGRAMMABLE_SYSTEM_ON_CHIP-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecae11743f6
CY8C20324-12LQXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 24SQFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
товар відсутній
AUIRF1018ES auirf1018es.pdf?fileId=5546d462533600a4015355a8a2491368
AUIRF1018ES
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 79A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
товар відсутній
BTG7016A1EPWDBTOBO1
Виробник: Infineon Technologies
Description: BTG7016A-1EPW DB
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7016A-1EPW
Platform: Arduino
товар відсутній
AUIRFR4105 AUIRFR4105.pdf
AUIRFR4105
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 20A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
товар відсутній
IMW65R040M2HXKSA1 Infineon-IMW65R040M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd64d52095328
IMW65R040M2HXKSA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
на замовлення 215 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+863.69 грн
10+ 584.91 грн
25+ 521.27 грн
100+ 422.42 грн
FS500R17OE4DBOSA1 Infineon-FS500R17OE4D-DS-v03_00-en_de.pdf?fileId=5546d46145f1f3a40145fb209c810fee
FS500R17OE4DBOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 740A 3000W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 740 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3000 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 40 nF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+55820.24 грн
TLS805B1LDVXUMA1 Infineon-TLS805B1-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc1015969ed6e11424b
TLS805B1LDVXUMA1
Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 50MA TSON-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Max): 41.7V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 50mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 11 µA
Qualification: AEC-Q100
товар відсутній
IPP029N06NXKSA1 Infineon-IPP029N06N-DS-v02_06-EN.pdf?fileId=db3a3043345a30bc013465bff03f62ec
IPP029N06NXKSA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 75µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5125 pF @ 30 V
товар відсутній
S25HL512TFABHB010 en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товар відсутній
CY9AF144NBPMC-G-JNE2 Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9AF144NBPMC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
товар відсутній
T2600N16TOFVTXPSA1 Infineon-T2600N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6f5ff7deb
T2600N16TOFVTXPSA1
Виробник: Infineon Technologies
Description: STD THYR/DIODEN DISC BG-T10035-1
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2610 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 1.8 kV
товар відсутній
T2600N18TOFVTXPSA1 Infineon-T2600N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6f5ff7deb
T2600N18TOFVTXPSA1
Виробник: Infineon Technologies
Description: STD THYR/DIODEN DISC BG-T10026K-
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2610 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 1.8 kV
товар відсутній
T3800N18TOFVTXPSA1 Infineon-T3800N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6e7bc7de7
T3800N18TOFVTXPSA1
Виробник: Infineon Technologies
Description: STD THYR/DIODEN DISC BG-T11126K-
Packaging: Tray
Package / Case: TO-200AE
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3800 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 5970 A
Voltage - Off State: 1.8 kV
товар відсутній
IDH03SG60CXKSA2 IDH03SG60C_rev2.1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30431ff98815012019e44a933f33
IDH03SG60CXKSA2
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 3A TO220-2-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
товар відсутній
CYT2B74CADR0AZSGST
CYT2B74CADR0AZSGST
Виробник: Infineon Technologies
Description: IC MCU 32BT 1.0625MB FLSH 80LQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
DigiKey Programmable: Not Verified
товар відсутній
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