Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (138900) > Сторінка 739 з 2315
Фото | Назва | Виробник | Інформація |
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ISC130N20NM6ATMA1 | Infineon Technologies |
Description: MOSFET Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 242W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 135µA Supplier Device Package: PG-TSON-8-3 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V |
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ISC130N20NM6ATMA1 | Infineon Technologies |
Description: MOSFET Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 242W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 135µA Supplier Device Package: PG-TSON-8-3 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V |
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CY90F546GPFR-GE1 | Infineon Technologies |
Description: IC MCU 16BIT 256KB FLASH 100QFP Packaging: Tray Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 256KB (256K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-16LX Data Converters: A/D 8x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART Peripherals: POR, WDT Supplier Device Package: 100-QFP (14x20) Number of I/O: 81 DigiKey Programmable: Not Verified |
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KITXMC1300DCV1TOBO1 | Infineon Technologies |
Description: KIT_XMC1300_DC_V1 Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: XMC1300 Supplied Contents: Board(s) Primary Attributes: Motors (BLDC) Embedded: Yes, MCU |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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FS450R17OE4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 630A 2400W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 630 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 2400 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 36 nF @ 25 V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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FF1500R12IE5PBPSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 1500A AGPRIME3+-5 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1.5kA NTC Thermistor: Yes Supplier Device Package: AG-PRIME3+-5 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1500 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5 mA |
на замовлення 297 шт: термін постачання 21-31 дні (днів) |
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FF1500R12IE5PBPSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 1500A AGPRIME3+-5 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1.5kA NTC Thermistor: Yes Supplier Device Package: AG-PRIME3+-5 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1500 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5 mA |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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FF150R17ME3GBOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 240A 1050W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 1050 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V |
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FF1000R17IE4BOSA1 | Infineon Technologies |
Description: PP, IHM I, XHP 1,7KV Packaging: Bulk |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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FF1800R17IP5BPSA1 | Infineon Technologies |
Description: PP, IHM I, XHP 1,7KV Packaging: Bulk |
на замовлення 122 шт: термін постачання 21-31 дні (днів) |
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C161SLM3VAABXUMA1 | Infineon Technologies |
Description: SAB-C161S - LEGACY 16-BIT MICROC Packaging: Bulk Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 20MHz RAM Size: 2K x 8 Operating Temperature: 0°C ~ 70°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: C166 Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Connectivity: EBI/EMI, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-80-7 Number of I/O: 63 DigiKey Programmable: Not Verified |
на замовлення 2247 шт: термін постачання 21-31 дні (днів) |
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AUIRLR014NTRL | Infineon Technologies |
Description: MOSFET N-CH 55V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V |
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IRF3709PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 90A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V |
на замовлення 1147 шт: термін постачання 21-31 дні (днів) |
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IRF3709PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 90A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V |
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IRF3007PBF | Infineon Technologies |
Description: MOSFET N-CH 75V 75A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V |
на замовлення 4927 шт: термін постачання 21-31 дні (днів) |
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2SD106AI17ULHPSA1 | Infineon Technologies |
Description: MODULE GATE DRIVER Packaging: Tray |
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CYPD2120-24LQXI | Infineon Technologies |
Description: IC USB TYPE C 1-PORT 24QFN Packaging: Bulk Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI, UART/USART, USB RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.71V ~ 5.5V Program Memory Type: FLASH (32kB) Applications: USB Type C Core Processor: ARM® Cortex®-M0 Supplier Device Package: 24-QFN (4x4) Number of I/O: 14 DigiKey Programmable: Not Verified |
на замовлення 1018 шт: термін постачання 21-31 дні (днів) |
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TDA22590XUMA1 | Infineon Technologies |
Description: POWERSTAGE CE Packaging: Tray |
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TDA22594AXUMA1 | Infineon Technologies |
Description: POWERSTAGE CE Packaging: Tray |
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CY14B256PA-SFXI | Infineon Technologies |
Description: IC NVSRAM 256KBIT SPI 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Clock Frequency: 40 MHz Memory Format: NVSRAM Supplier Device Package: 16-SOIC Memory Interface: SPI Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
на замовлення 463 шт: термін постачання 21-31 дні (днів) |
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AUXHBFB3306 | Infineon Technologies |
Description: IC MEMORY Packaging: Bulk |
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CY7C63231A-SC | Infineon Technologies |
Description: IC MCU 3K USB LS PERIPH 18-SOIC Packaging: Tube Package / Case: 18-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Interface: USB RAM Size: 96 x 8 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.5V ~ 5.5V Controller Series: CY7C632xx Program Memory Type: OTP (3kB) Applications: USB Microcontroller Core Processor: M8B Supplier Device Package: 18-SOIC Number of I/O: 10 DigiKey Programmable: Not Verified |
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IPS60R1K0PFD7SAKMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 4.7A TO251-3 Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V Power Dissipation (Max): 26W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V |
на замовлення 43500 шт: термін постачання 21-31 дні (днів) |
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IPS60R210PFD7SAKMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 16A TO251-3 Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V Power Dissipation (Max): 64W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 240µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V |
на замовлення 4069 шт: термін постачання 21-31 дні (днів) |
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IPU95R2K0P7AKMA1 | Infineon Technologies |
Description: MOSFET N-CH 950V 4A TO251-3 Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 80µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V |
на замовлення 6957 шт: термін постачання 21-31 дні (днів) |
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BDP954H6327XTSA1 | Infineon Technologies |
Description: TRANS PNP 100V 3A SOT223-4 Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 100MHz Supplier Device Package: PG-SOT223-4 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 5 W |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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FP40R12KE3BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 55A 210W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 210 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V |
на замовлення 49 шт: термін постачання 21-31 дні (днів) |
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IRFZ46ZSTRLPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 51A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V |
на замовлення 6080 шт: термін постачання 21-31 дні (днів) |
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ISC110N12NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 62A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 26A, 10V Power Dissipation (Max): 3W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 35µA Supplier Device Package: SuperSO8 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 60 V |
на замовлення 4945 шт: термін постачання 21-31 дні (днів) |
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BC857AE6327HTSA1 | Infineon Technologies |
Description: TRANS PNP 45V 0.1A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW |
на замовлення 234000 шт: термін постачання 21-31 дні (днів) |
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DZ1100N22KHPSA2 | Infineon Technologies |
Description: DIODE GP 2.2KV 1100A MODULE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1100A Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 2200 V Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A Current - Reverse Leakage @ Vr: 80 mA @ 2200 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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IRFB7440GPBF | Infineon Technologies |
Description: MOSFET N CH 40V 120A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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AUIRFS4610 | Infineon Technologies |
Description: MOSFET N-CH 100V 73A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 44A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 50 V |
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CY7C25632KV18-500BZXC | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 500 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 4M x 18 DigiKey Programmable: Not Verified |
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S29AS016J70BHI043 | Infineon Technologies |
Description: IC FLASH 16MBIT PARALLEL 48FBGA Packaging: Tape & Reel (TR) Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 1.95V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 48-FBGA (8.15x6.15) Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 2M x 8, 1M x 16 DigiKey Programmable: Not Verified |
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S29GL064S70BHI043 | Infineon Technologies |
Description: IC FLASH 64MBIT PARALLEL 48FBGA Packaging: Tape & Reel (TR) Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 48-FBGA (8.15x6.15) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Not Verified |
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S29GL064S90FHI040 | Infineon Technologies |
Description: IC FLASH 64MBIT PARALLEL 64FBGA Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Grade: Automotive Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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S29GL064S90BHI043 | Infineon Technologies |
Description: IC FLASH 64MBIT PARALLEL 48FBGA Packaging: Tape & Reel (TR) Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 48-FBGA (8.15x6.15) Grade: Automotive Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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S29GL064S90BHI040 | Infineon Technologies |
Description: IC FLASH 64MBIT PARALLEL 48FBGA Packaging: Tray Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 48-FBGA (8.15x6.15) Grade: Automotive Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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IDD09SG60CXTMA2 | Infineon Technologies |
Description: DIODE SIL CARB 600V 9A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 280pF @ 1V, 1MHz Current - Average Rectified (Io): 9A Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A Current - Reverse Leakage @ Vr: 80 µA @ 600 V |
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CY7C13451G-100BZXE | Infineon Technologies |
Description: IC SRAM 4MBIT PAR 165FBGA Packaging: Bulk Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 100 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Access Time: 8 ns Memory Organization: 128K x 36 DigiKey Programmable: Not Verified |
на замовлення 259 шт: термін постачання 21-31 дні (днів) |
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AUIRG4PH50SXKMA1 | Infineon Technologies |
Description: DISCRETE SWITCHES Packaging: Tube |
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CHL8325A-03CRT | Infineon Technologies |
Description: IC REG BUCK 40VQFN Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Output Type: PWM Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 200kHz ~ 1.2MHz Topology: Buck Voltage - Supply (Vcc/Vdd): 3.3V Supplier Device Package: PG-VQFN-40-902 Synchronous Rectifier: No Control Features: Enable, Power Good Serial Interfaces: I2C, PMBus, SMBus Output Phases: 5 Clock Sync: No Number of Outputs: 5 |
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FF225R12ME4PBPSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 450A 20MW Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 450 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 13 nF @ 25 V |
на замовлення 168 шт: термін постачання 21-31 дні (днів) |
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S29GL512T10TFI013 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 56TSOP Packaging: Tape & Reel (TR) Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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S29GL512T10TFI013 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 56TSOP Packaging: Cut Tape (CT) Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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EVALFFXMR20KM1HDRTOBO1 | Infineon Technologies |
Description: POWER MANAGEMENT IC DEVELOPMENT Packaging: Box Function: MOSFET Type: Power Management Contents: Board(s) Utilized IC / Part: FF3MR20KM1H, FF4MR20KM1H, FF6MR20KM1H Supplied Contents: Board(s) Primary Attributes: Isolated Secondary Attributes: On-Board LEDs Embedded: Yes, MCU |
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FF4MR12W2M1HB11BPSA1 | Infineon Technologies |
Description: SIC 2N-CH 1200V 170A MODULE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 170A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V Vgs(th) (Max) @ Id: 5.15V @ 80mA Supplier Device Package: Module |
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FF75R12W1T7EB11BPSA1 | Infineon Technologies |
Description: EASY STANDARD Packaging: Tray |
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CY15V108QN-20LPXI | Infineon Technologies |
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN Packaging: Tray Package / Case: 8-UQFN Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.71V ~ 1.89V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 20 MHz Memory Format: FRAM Supplier Device Package: 8-GQFN (3.23x3.28) Memory Interface: SPI Memory Organization: 1M x 8 DigiKey Programmable: Not Verified |
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CY15V108QI-20LPXC | Infineon Technologies |
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN Packaging: Tray Package / Case: 8-UQFN Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.71V ~ 1.89V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 20 MHz Memory Format: FRAM Supplier Device Package: 8-GQFN (3.23x3.28) Memory Interface: SPI Memory Organization: 1M x 8 DigiKey Programmable: Not Verified |
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ESD8V0L1B-02LRH E6433 | Infineon Technologies |
Description: TVS DIODE 14VWM 21VC TSLP-2 Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 8.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 14V (Max) Supplier Device Package: PG-TSLP-2-17 Bidirectional Channels: 1 Voltage - Breakdown (Min): 14.5V (Typ) Voltage - Clamping (Max) @ Ipp: 21V (Typ) Power Line Protection: No |
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IMBG120R116M2HXTMA1 | Infineon Technologies |
Description: SIC DISCRETE Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc) Rds On (Max) @ Id, Vgs: 115.7mOhm @ 6A, 18V Power Dissipation (Max): 123W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 1.9mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 800 V |
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IMBG120R116M2HXTMA1 | Infineon Technologies |
Description: SIC DISCRETE Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc) Rds On (Max) @ Id, Vgs: 115.7mOhm @ 6A, 18V Power Dissipation (Max): 123W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 1.9mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 800 V |
на замовлення 821 шт: термін постачання 21-31 дні (днів) |
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SI4435DY | Infineon Technologies |
Description: MOSFET P-CH 30V 8A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 15 V |
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IPB80N06S2L09ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 55V 80A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 52A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 2V @ 125µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V |
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IM240M6Z1BALMA1 | Infineon Technologies |
Description: IGBT MODULE 600V 8.9W 23SOP Packaging: Tube Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 4A NTC Thermistor: Yes Supplier Device Package: 23-SOP Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 8.9 W Current - Collector Cutoff (Max): 40 µA |
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IR2011PBF | Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 35ns, 20ns Channel Type: Independent Driven Configuration: High-Side or Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.7V, 2.2V Current - Peak Output (Source, Sink): 1A, 1A DigiKey Programmable: Not Verified |
на замовлення 4001 шт: термін постачання 21-31 дні (днів) |
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AUIRFS8403 | Infineon Technologies |
Description: MOSFET N-CH 40V 123A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 123A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V Power Dissipation (Max): 99W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V |
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CY8C4247LTQ-M475 | Infineon Technologies |
Description: MICROCONTROLLER ARM CORTEX Packaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 1x12b SAR; D/A 4x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT Supplier Device Package: 68-QFN (8x8) Number of I/O: 55 DigiKey Programmable: Not Verified |
на замовлення 520 шт: термін постачання 21-31 дні (днів) |
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ISC130N20NM6ATMA1 |
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 242W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 135µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 242W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 135µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
товар відсутній
ISC130N20NM6ATMA1 |
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 242W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 135µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 242W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 135µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
товар відсутній
CY90F546GPFR-GE1 |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 81
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 256KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 81
DigiKey Programmable: Not Verified
товар відсутній
KITXMC1300DCV1TOBO1 |
Виробник: Infineon Technologies
Description: KIT_XMC1300_DC_V1
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: XMC1300
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU
Description: KIT_XMC1300_DC_V1
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: XMC1300
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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1+ | 5342.82 грн |
FS450R17OE4BOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 630A 2400W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 630 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2400 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
Description: IGBT MOD 1700V 630A 2400W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 630 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2400 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 56025.59 грн |
FF1500R12IE5PBPSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 1500A AGPRIME3+-5
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1.5kA
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3+-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Description: IGBT MOD 1200V 1500A AGPRIME3+-5
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1.5kA
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3+-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
на замовлення 297 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 62648.27 грн |
FF1500R12IE5PBPSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 1500A AGPRIME3+-5
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1.5kA
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3+-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Description: IGBT MOD 1200V 1500A AGPRIME3+-5
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1.5kA
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3+-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 56509.16 грн |
FF150R17ME3GBOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 240A 1050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
Description: IGBT MOD 1700V 240A 1050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
товар відсутній
FF1000R17IE4BOSA1 |
на замовлення 27 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 49597.27 грн |
FF1800R17IP5BPSA1 |
на замовлення 122 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 81187.88 грн |
C161SLM3VAABXUMA1 |
Виробник: Infineon Technologies
Description: SAB-C161S - LEGACY 16-BIT MICROC
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 63
DigiKey Programmable: Not Verified
Description: SAB-C161S - LEGACY 16-BIT MICROC
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 63
DigiKey Programmable: Not Verified
на замовлення 2247 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
67+ | 328.88 грн |
AUIRLR014NTRL |
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V
Description: MOSFET N-CH 55V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V
товар відсутній
IRF3709PBF |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 90A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
Description: MOSFET N-CH 30V 90A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
на замовлення 1147 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
487+ | 43.65 грн |
IRF3709PBF |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
Description: MOSFET N-CH 30V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
товар відсутній
IRF3007PBF |
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
на замовлення 4927 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
338+ | 62.65 грн |
2SD106AI17ULHPSA1 |
товар відсутній
CYPD2120-24LQXI |
Виробник: Infineon Technologies
Description: IC USB TYPE C 1-PORT 24QFN
Packaging: Bulk
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 14
DigiKey Programmable: Not Verified
Description: IC USB TYPE C 1-PORT 24QFN
Packaging: Bulk
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 14
DigiKey Programmable: Not Verified
на замовлення 1018 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
314+ | 70.16 грн |
TDA22590XUMA1 |
товар відсутній
TDA22594AXUMA1 |
товар відсутній
CY14B256PA-SFXI |
Виробник: Infineon Technologies
Description: IC NVSRAM 256KBIT SPI 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 256KBIT SPI 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 463 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 737.51 грн |
10+ | 658.12 грн |
46+ | 639.73 грн |
92+ | 528.5 грн |
276+ | 502.27 грн |
CY7C63231A-SC |
Виробник: Infineon Technologies
Description: IC MCU 3K USB LS PERIPH 18-SOIC
Packaging: Tube
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: USB
RAM Size: 96 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.5V ~ 5.5V
Controller Series: CY7C632xx
Program Memory Type: OTP (3kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 18-SOIC
Number of I/O: 10
DigiKey Programmable: Not Verified
Description: IC MCU 3K USB LS PERIPH 18-SOIC
Packaging: Tube
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: USB
RAM Size: 96 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.5V ~ 5.5V
Controller Series: CY7C632xx
Program Memory Type: OTP (3kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 18-SOIC
Number of I/O: 10
DigiKey Programmable: Not Verified
товар відсутній
IPS60R1K0PFD7SAKMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 4.7A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
Description: MOSFET N-CH 650V 4.7A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
на замовлення 43500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
944+ | 23.07 грн |
IPS60R210PFD7SAKMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 16A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
Description: MOSFET N-CH 650V 16A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
на замовлення 4069 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
361+ | 59.85 грн |
IPU95R2K0P7AKMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 4A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
Description: MOSFET N-CH 950V 4A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
на замовлення 6957 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
594+ | 36.77 грн |
BDP954H6327XTSA1 |
Виробник: Infineon Technologies
Description: TRANS PNP 100V 3A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
Description: TRANS PNP 100V 3A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
714+ | 29.57 грн |
FP40R12KE3BOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 55A 210W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Description: IGBT MOD 1200V 55A 210W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
на замовлення 49 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 5540.13 грн |
IRFZ46ZSTRLPBF |
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
на замовлення 6080 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
356+ | 59.13 грн |
ISC110N12NM6ATMA1 |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 26A, 10V
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 35µA
Supplier Device Package: SuperSO8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 60 V
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 26A, 10V
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 35µA
Supplier Device Package: SuperSO8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 60 V
на замовлення 4945 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 163.02 грн |
10+ | 100.76 грн |
100+ | 68.64 грн |
500+ | 51.48 грн |
1000+ | 47.32 грн |
2000+ | 43.81 грн |
BC857AE6327HTSA1 |
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 234000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7818+ | 2.82 грн |
DZ1100N22KHPSA2 |
Виробник: Infineon Technologies
Description: DIODE GP 2.2KV 1100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A
Current - Reverse Leakage @ Vr: 80 mA @ 2200 V
Description: DIODE GP 2.2KV 1100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A
Current - Reverse Leakage @ Vr: 80 mA @ 2200 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 35597.93 грн |
IRFB7440GPBF |
Виробник: Infineon Technologies
Description: MOSFET N CH 40V 120A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V
Description: MOSFET N CH 40V 120A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
450+ | 51.39 грн |
AUIRFS4610 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 73A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 44A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 50 V
Description: MOSFET N-CH 100V 73A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 44A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 50 V
товар відсутній
CY7C25632KV18-500BZXC |
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 500 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 500 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
товар відсутній
S29AS016J70BHI043 |
Виробник: Infineon Technologies
Description: IC FLASH 16MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
товар відсутній
S29GL064S70BHI043 |
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
товар відсутній
S29GL064S90FHI040 |
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
S29GL064S90BHI043 |
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
S29GL064S90BHI040 |
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
IDD09SG60CXTMA2 |
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
Description: DIODE SIL CARB 600V 9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
товар відсутній
CY7C13451G-100BZXE |
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
на замовлення 259 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
32+ | 697.22 грн |
AUIRG4PH50SXKMA1 |
товар відсутній
CHL8325A-03CRT |
Виробник: Infineon Technologies
Description: IC REG BUCK 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-40-902
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I2C, PMBus, SMBus
Output Phases: 5
Clock Sync: No
Number of Outputs: 5
Description: IC REG BUCK 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-40-902
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I2C, PMBus, SMBus
Output Phases: 5
Clock Sync: No
Number of Outputs: 5
товар відсутній
FF225R12ME4PBPSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 450A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Description: IGBT MOD 1200V 450A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
на замовлення 168 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 8223.1 грн |
S29GL512T10TFI013 |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 524.23 грн |
S29GL512T10TFI013 |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Cut Tape (CT)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Cut Tape (CT)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 772.78 грн |
10+ | 660.91 грн |
25+ | 630.34 грн |
50+ | 570.67 грн |
100+ | 550.52 грн |
250+ | 524.91 грн |
500+ | 498.01 грн |
EVALFFXMR20KM1HDRTOBO1 |
Виробник: Infineon Technologies
Description: POWER MANAGEMENT IC DEVELOPMENT
Packaging: Box
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: FF3MR20KM1H, FF4MR20KM1H, FF6MR20KM1H
Supplied Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU
Description: POWER MANAGEMENT IC DEVELOPMENT
Packaging: Box
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: FF3MR20KM1H, FF4MR20KM1H, FF6MR20KM1H
Supplied Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU
товар відсутній
FF4MR12W2M1HB11BPSA1 |
Виробник: Infineon Technologies
Description: SIC 2N-CH 1200V 170A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V
Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 80mA
Supplier Device Package: Module
Description: SIC 2N-CH 1200V 170A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V
Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 80mA
Supplier Device Package: Module
товар відсутній
FF75R12W1T7EB11BPSA1 |
товар відсутній
CY15V108QN-20LPXI |
Виробник: Infineon Technologies
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
Packaging: Tray
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
Packaging: Tray
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
товар відсутній
CY15V108QI-20LPXC |
Виробник: Infineon Technologies
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
Packaging: Tray
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
Packaging: Tray
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
товар відсутній
ESD8V0L1B-02LRH E6433 |
Виробник: Infineon Technologies
Description: TVS DIODE 14VWM 21VC TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 21V (Typ)
Power Line Protection: No
Description: TVS DIODE 14VWM 21VC TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 21V (Typ)
Power Line Protection: No
товар відсутній
IMBG120R116M2HXTMA1 |
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc)
Rds On (Max) @ Id, Vgs: 115.7mOhm @ 6A, 18V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.9mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 800 V
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc)
Rds On (Max) @ Id, Vgs: 115.7mOhm @ 6A, 18V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.9mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 800 V
товар відсутній
IMBG120R116M2HXTMA1 |
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc)
Rds On (Max) @ Id, Vgs: 115.7mOhm @ 6A, 18V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.9mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 800 V
Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc)
Rds On (Max) @ Id, Vgs: 115.7mOhm @ 6A, 18V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.9mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 800 V
на замовлення 821 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 595.65 грн |
10+ | 391.25 грн |
100+ | 287.76 грн |
500+ | 232.96 грн |
SI4435DY |
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 8A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 15 V
Description: MOSFET P-CH 30V 8A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 15 V
товар відсутній
IPB80N06S2L09ATMA2 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 52A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 2V @ 125µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 52A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 2V @ 125µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V
товар відсутній
IM240M6Z1BALMA1 |
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 8.9W 23SOP
Packaging: Tube
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 4A
NTC Thermistor: Yes
Supplier Device Package: 23-SOP
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 8.9 W
Current - Collector Cutoff (Max): 40 µA
Description: IGBT MODULE 600V 8.9W 23SOP
Packaging: Tube
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 4A
NTC Thermistor: Yes
Supplier Device Package: 23-SOP
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 8.9 W
Current - Collector Cutoff (Max): 40 µA
товар відсутній
IR2011PBF |
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.7V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.7V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
DigiKey Programmable: Not Verified
на замовлення 4001 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 198.29 грн |
10+ | 171.4 грн |
50+ | 162.07 грн |
100+ | 131.82 грн |
250+ | 125.06 грн |
500+ | 119.01 грн |
AUIRFS8403 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 123A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V
Description: MOSFET N-CH 40V 123A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V
товар відсутній
CY8C4247LTQ-M475 |
Виробник: Infineon Technologies
Description: MICROCONTROLLER ARM CORTEX
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 1x12b SAR; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: MICROCONTROLLER ARM CORTEX
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 1x12b SAR; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 55
DigiKey Programmable: Not Verified
на замовлення 520 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 536.08 грн |
10+ | 466.12 грн |
25+ | 444.44 грн |
80+ | 362.15 грн |
260+ | 345.88 грн |
520+ | 315.36 грн |