IPA80R310CEXKSA1

IPA80R310CEXKSA1 Infineon Technologies


484infineon-ipa80r310ce-ds-v02_00-en.pdffileid5546d46249be182c0149c7.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH 800V 16.7A 3-Pin(3+Tab) TO-220FP Tube
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис IPA80R310CEXKSA1 Infineon Technologies

Description: MOSFET N-CH 800V 6.8A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc), Rds On (Max) @ Id, Vgs: 310mOhm @ 11A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 1mA, Supplier Device Package: PG-TO220-FP, Part Status: Discontinued at Digi-Key, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 100 V.

Інші пропозиції IPA80R310CEXKSA1

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
IPA80R310CEXKSA1 IPA80R310CEXKSA1 Виробник : Infineon Technologies Infineon-IPA80R310CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c78875be1e45 Description: MOSFET N-CH 800V 6.8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 11A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-FP
Part Status: Discontinued at Digi-Key
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 100 V
товар відсутній
IPA80R310CEXKSA1 IPA80R310CEXKSA1 Виробник : Infineon Technologies Infineon-IPA80R310CE-DS-v02_01-EN-540065.pdf MOSFET CONSUMER
товар відсутній