IPD60R650CEATMA1 Infineon Technologies

Description: MOSFET N-CH 600V 7A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 200µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V.