Технічний опис IPA80R460CEXKSA1 Infineon Technologies
Description: MOSFET N-CH 800V 5A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 460mOhm @ 7.1A, 10V, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 680µA, Supplier Device Package: PG-TO220-FP, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V.
Інші пропозиції IPA80R460CEXKSA1
| Фото | Назва | Виробник | Інформація |
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IPA80R460CEXKSA1 | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 800V 10.8A 3-Pin(3+Tab) TO-220FP Tube |
товар відсутній |
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IPA80R460CEXKSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 800V 5A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 460mOhm @ 7.1A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 680µA Supplier Device Package: PG-TO220-FP Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V |
товар відсутній |