Технічний опис AUIRGU4045D Infineon Technologies
Description: DIODE 600V IGBT, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 74 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A, Supplier Device Package: I-PAK, IGBT Type: Trench, Td (on/off) @ 25°C: 27ns/75ns, Switching Energy: 56µJ (on), 122µJ (off), Test Condition: 400V, 6A, 47Ohm, 15V, Gate Charge: 19.5 nC, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 18 A, Power - Max: 77 W.
Інші пропозиції AUIRGU4045D
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
AUIRGU4045D | Виробник : Infineon Technologies |
 Trans IGBT Chip N-CH 600V 12A 77W Automotive AEC-Q101 3-Pin(3+Tab) IPAK Tube |
товар відсутній |
|
;;3.jpg "AUIRGU4045D") |
AUIRGU4045D | Виробник : Infineon Technologies |
Description: DIODE 600V IGBT Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 74 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Supplier Device Package: I-PAK IGBT Type: Trench Td (on/off) @ 25°C: 27ns/75ns Switching Energy: 56µJ (on), 122µJ (off) Test Condition: 400V, 6A, 47Ohm, 15V Gate Charge: 19.5 nC Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 18 A Power - Max: 77 W |
товар відсутній |