Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136448) > Сторінка 190 з 2275
Фото | Назва | Виробник | Інформація |
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IRFTS9342TRPBF | Infineon Technologies |
Description: MOSFET P-CH 30V 5.8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 5.8A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 25µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 25 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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IRLTS2242TRPBF | Infineon Technologies |
Description: MOSFET P-CH 20V 6.9A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 6.9A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 10µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 10 V |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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IRFR812TRPBF | Infineon Technologies | Description: MOSFET N-CH 500V 3.6A DPAK |
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IRFR812PBF | Infineon Technologies | Description: MOSFET N-CH 500V 3.6A DPAK |
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IRFR825TRPBF | Infineon Technologies |
Description: MOSFET N-CH 500V 6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.7A, 10V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 25 V |
на замовлення 46000 шт: термін постачання 21-31 дні (днів) |
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IRFR825PBF | Infineon Technologies | Description: MOSFET N-CH 500V 6A DPAK |
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IRFH7107TRPBF | Infineon Technologies |
Description: MOSFET N-CH 75V 14A/75A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 25 V |
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IRFTS8342TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 8.2A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 8.2A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V |
на замовлення 14679 шт: термін постачання 21-31 дні (днів) |
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IRLH7134TRPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 26A/85A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V |
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IRLTS6342TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 8.3A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8.3A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 10µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 25 V |
на замовлення 9682 шт: термін постачання 21-31 дні (днів) |
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IRFTS9342TRPBF | Infineon Technologies |
Description: MOSFET P-CH 30V 5.8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 5.8A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 25µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 25 V |
на замовлення 22701 шт: термін постачання 21-31 дні (днів) |
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IRLTS2242TRPBF | Infineon Technologies |
Description: MOSFET P-CH 20V 6.9A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 6.9A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 10µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 10 V |
на замовлення 51516 шт: термін постачання 21-31 дні (днів) |
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IRFR812TRPBF | Infineon Technologies | Description: MOSFET N-CH 500V 3.6A DPAK |
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IRFR825TRPBF | Infineon Technologies |
Description: MOSFET N-CH 500V 6A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.7A, 10V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 25 V |
на замовлення 46519 шт: термін постачання 21-31 дні (днів) |
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IRFH7107TR2PBF | Infineon Technologies |
Description: MOSFET N-CH 75V 14A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 25 V |
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CY14V101Q3-SFXI | Infineon Technologies | Description: IC NVSRAM 1MBIT SPI 30MHZ 16SOIC |
на замовлення 660 шт: термін постачання 21-31 дні (днів) |
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CY7C1021DV33-10ZSXA | Infineon Technologies | Description: IC SRAM 1MBIT PARALLEL 44TSOP II |
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CY7C1263XV18-633BZXC | Infineon Technologies | Description: IC SRAM 36MBIT PARALLEL 165FBGA |
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CY7C1265XV18-600BZXC | Infineon Technologies |
Description: IC SRAM 36MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 600 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 1M x 36 DigiKey Programmable: Not Verified |
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CY7C1440AV25-250BZXI | Infineon Technologies | Description: IC SRAM 36MBIT PARALLEL 165FBGA |
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CY7C1470BV25-250BZXC | Infineon Technologies | Description: IC SRAM 72MBIT PAR 165FBGA |
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CY7C1565XV18-633BZXC | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 633 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Part Status: Active Memory Interface: Parallel Memory Organization: 2M x 36 DigiKey Programmable: Not Verified |
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CY7C1568XV18-600BZXC | Infineon Technologies | Description: IC SRAM 72MBIT PAR 165FBGA |
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CY7C1568XV18-633BZXC | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II+ Clock Frequency: 633 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Part Status: Active Memory Interface: Parallel Memory Organization: 4M x 18 DigiKey Programmable: Not Verified |
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CY7C1612KV18-250BZXI | Infineon Technologies |
Description: IC SRAM 144MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 144Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 250 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Part Status: Active Memory Interface: Parallel Memory Organization: 8M x 18 DigiKey Programmable: Not Verified |
на замовлення 53 шт: термін постачання 21-31 дні (днів) |
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CY7C1612KV18-300BZXI | Infineon Technologies |
Description: IC SRAM 144MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 144Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 300 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Memory Interface: Parallel Memory Organization: 8M x 18 DigiKey Programmable: Not Verified |
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CY7C1613KV18-300BZI | Infineon Technologies |
Description: IC SRAM 144MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 144Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 300 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Part Status: Active Memory Interface: Parallel Memory Organization: 8M x 18 |
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CY7C1615KV18-250BZXC | Infineon Technologies |
Description: IC SRAM 144MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 144Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 250 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Part Status: Active Memory Interface: Parallel Memory Organization: 4M x 36 DigiKey Programmable: Not Verified |
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CY7C1618KV18-300BZXC | Infineon Technologies |
Description: IC SRAM 144MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 144Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 300 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Part Status: Active Memory Interface: Parallel Memory Organization: 4M x 36 |
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CY7C1643KV18-450BZI | Infineon Technologies |
Description: IC SRAM 144MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 144Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 450 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Memory Interface: Parallel Memory Organization: 8M x 18 DigiKey Programmable: Not Verified |
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CY7C1645KV18-400BZXI | Infineon Technologies |
Description: IC SRAM 144MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 144Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 400 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Part Status: Active Memory Interface: Parallel Memory Organization: 4M x 36 DigiKey Programmable: Not Verified |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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CY7C1645KV18-450BZXI | Infineon Technologies |
Description: IC SRAM 144MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 144Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 450 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Part Status: Active Memory Interface: Parallel Memory Organization: 4M x 36 DigiKey Programmable: Not Verified |
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CY7C1650KV18-450BZC | Infineon Technologies |
Description: IC SRAM 144MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 144Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II+ Clock Frequency: 450 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Part Status: Active Memory Interface: Parallel Memory Organization: 4M x 36 |
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CY7C1663KV18-550BZXC | Infineon Technologies |
Description: IC SRAM 144MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 144Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 550 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Memory Interface: Parallel Memory Organization: 8M x 18 DigiKey Programmable: Not Verified |
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CY7C1670KV18-450BZXC | Infineon Technologies |
Description: IC SRAM 144MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 144Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II+ Clock Frequency: 450 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Part Status: Active Memory Interface: Parallel Memory Organization: 4M x 36 |
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CY7C2262XV18-366BZXC | Infineon Technologies |
Description: IC SRAM 36MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 366 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Part Status: Active Memory Interface: Parallel Memory Organization: 2M x 18 DigiKey Programmable: Not Verified |
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CY7C2265XV18-633BZXC | Infineon Technologies |
Description: IC SRAM 36MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 633 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 1M x 36 DigiKey Programmable: Not Verified |
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CY7C2665KV18-450BZI | Infineon Technologies |
Description: IC SRAM 144MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 144Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 450 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Memory Interface: Parallel Memory Organization: 4M x 36 DigiKey Programmable: Not Verified |
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CY7C2665KV18-450BZXI | Infineon Technologies |
Description: IC SRAM 144MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 144Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 450 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Memory Interface: Parallel Memory Organization: 4M x 36 DigiKey Programmable: Not Verified |
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CY7C2665KV18-550BZI | Infineon Technologies |
Description: IC SRAM 144MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 144Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 550 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Memory Interface: Parallel Memory Organization: 4M x 36 DigiKey Programmable: Not Verified |
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CY7C2670KV18-550BZI | Infineon Technologies |
Description: IC SRAM 144MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 144Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II+ Clock Frequency: 550 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Memory Interface: Parallel Memory Organization: 4M x 36 DigiKey Programmable: Not Verified |
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BSC082N10LSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 13.8A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 100A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 110µA Supplier Device Package: PG-TDSON-8-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V |
на замовлення 10790 шт: термін постачання 21-31 дні (днів) |
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BSC0901NSI | Infineon Technologies | Description: MOSFET N-CH 30V 28A 8TDSON |
на замовлення 7499 шт: термін постачання 21-31 дні (днів) |
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BSC0904NSI | Infineon Technologies | Description: MOSFET N-CH 30V 20A 8TDSON |
на замовлення 324 шт: термін постачання 21-31 дні (днів) |
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BSC0906NSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 18A/63A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V |
на замовлення 10882 шт: термін постачання 21-31 дні (днів) |
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BSC109N10NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 63A TDSON-8-1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 10.9mOhm @ 46A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 45µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V |
на замовлення 31943 шт: термін постачання 21-31 дні (днів) |
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BSC196N10NSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 8.5A/45A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 19.6mOhm @ 45A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 42µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V |
на замовлення 52555 шт: термін постачання 21-31 дні (днів) |
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BSC22DN20NS3 G | Infineon Technologies | Description: MOSFET N-CH 200V 7A 8TDSON |
на замовлення 11863 шт: термін постачання 21-31 дні (днів) |
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BSC360N15NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 150V 33A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 25A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 45µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 75 V |
на замовлення 15246 шт: термін постачання 21-31 дні (днів) |
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BSC882N03MSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 34V 22A/100A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 34 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V |
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BSC883N03LSGATMA1 | Infineon Technologies | Description: MOSFET N-CH 34V 17A TDSON-8 |
товар відсутній |
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BSC883N03MSGATMA1 | Infineon Technologies | Description: MOSFET N-CH 34V 19A TDSON-8 |
товар відсутній |
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BSC886N03LSGATMA1 | Infineon Technologies | Description: MOSFET N-CH 30V 13A/65A TDSON |
товар відсутній |
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BSC889N03MSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 12A 44A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) 44A (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V |
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BSF030NE2LQ | Infineon Technologies | Description: MOSFET N-CH 25V 24A WDSON-2 |
на замовлення 18003 шт: термін постачання 21-31 дні (днів) |
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BSF077N06NT3GXUMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 13A WDSON-2 |
товар відсутній |
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BSO080P03NS3EGXUMA1 | Infineon Technologies |
Description: MOSFET P-CH 30V 12A 8DSO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 14.8A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3.1V @ 150µA Supplier Device Package: PG-DSO-8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 15 V |
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BSO080P03SHXUMA1 | Infineon Technologies |
Description: MOSFET P-CH 30V 12.6A 8DSO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V Power Dissipation (Max): 1.79W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-DSO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V |
на замовлення 3412 шт: термін постачання 21-31 дні (днів) |
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BSO130P03SHXUMA1 | Infineon Technologies |
Description: MOSFET P-CH 30V 9.2A 8DSO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 11.7A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 140µA Supplier Device Package: PG-DSO-8 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 25 V |
на замовлення 2471 шт: термін постачання 21-31 дні (днів) |
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BSO150N03MDGXUMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 30V 8A 8DSO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V Rds On (Max) @ Id, Vgs: 15mOhm @ 9.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-DSO-8 Part Status: Active |
на замовлення 11545 шт: термін постачання 21-31 дні (днів) |
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IRFTS9342TRPBF |
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 5.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 25 V
Description: MOSFET P-CH 30V 5.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 25 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 10.82 грн |
6000+ | 9.89 грн |
9000+ | 9.19 грн |
IRLTS2242TRPBF |
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 6.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.9A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 10 V
Description: MOSFET P-CH 20V 6.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.9A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 10 V
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 10.33 грн |
6000+ | 9.44 грн |
9000+ | 8.76 грн |
30000+ | 8.03 грн |
IRFR825TRPBF |
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.7A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 25 V
Description: MOSFET N-CH 500V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.7A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 25 V
на замовлення 46000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2000+ | 67.86 грн |
6000+ | 62.89 грн |
10000+ | 60.81 грн |
IRFH7107TRPBF |
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 14A/75A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 25 V
Description: MOSFET N-CH 75V 14A/75A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 25 V
товар відсутній
IRFTS8342TRPBF |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 8.2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Description: MOSFET N-CH 30V 8.2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
на замовлення 14679 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 33.57 грн |
11+ | 28 грн |
100+ | 19.47 грн |
500+ | 14.27 грн |
1000+ | 11.6 грн |
IRLH7134TRPBF |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 26A/85A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
Description: MOSFET N-CH 40V 26A/85A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
товар відсутній
IRLTS6342TRPBF |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 8.3A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8.3A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 25 V
Description: MOSFET N-CH 30V 8.3A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8.3A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 25 V
на замовлення 9682 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.28 грн |
12+ | 25.28 грн |
100+ | 17.58 грн |
500+ | 12.88 грн |
1000+ | 10.47 грн |
IRFTS9342TRPBF |
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 5.8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 25 V
Description: MOSFET P-CH 30V 5.8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 25 V
на замовлення 22701 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 32.05 грн |
12+ | 26.45 грн |
100+ | 18.37 грн |
500+ | 13.46 грн |
1000+ | 10.94 грн |
IRLTS2242TRPBF |
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 6.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.9A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 10 V
Description: MOSFET P-CH 20V 6.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.9A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 10 V
на замовлення 51516 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.28 грн |
12+ | 25.2 грн |
100+ | 17.53 грн |
500+ | 12.84 грн |
1000+ | 10.44 грн |
IRFR825TRPBF |
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.7A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 25 V
Description: MOSFET N-CH 500V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.7A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 25 V
на замовлення 46519 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 151.08 грн |
10+ | 120.36 грн |
100+ | 95.81 грн |
500+ | 76.08 грн |
1000+ | 64.56 грн |
IRFH7107TR2PBF |
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 14A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 25 V
Description: MOSFET N-CH 75V 14A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 25 V
товар відсутній
CY14V101Q3-SFXI |
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 30MHZ 16SOIC
Description: IC NVSRAM 1MBIT SPI 30MHZ 16SOIC
на замовлення 660 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1197.22 грн |
10+ | 1067.2 грн |
25+ | 1052.65 грн |
50+ | 975.46 грн |
100+ | 899.63 грн |
CY7C1021DV33-10ZSXA |
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Description: IC SRAM 1MBIT PARALLEL 44TSOP II
товар відсутній
CY7C1263XV18-633BZXC |
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Description: IC SRAM 36MBIT PARALLEL 165FBGA
товар відсутній
CY7C1265XV18-600BZXC |
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 600 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 600 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
товар відсутній
CY7C1440AV25-250BZXI |
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Description: IC SRAM 36MBIT PARALLEL 165FBGA
товар відсутній
CY7C1470BV25-250BZXC |
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Description: IC SRAM 72MBIT PAR 165FBGA
товар відсутній
CY7C1565XV18-633BZXC |
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 633 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 633 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
товар відсутній
CY7C1568XV18-600BZXC |
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Description: IC SRAM 72MBIT PAR 165FBGA
товар відсутній
CY7C1568XV18-633BZXC |
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 633 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 633 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
товар відсутній
CY7C1612KV18-250BZXI |
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
на замовлення 53 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 17832.33 грн |
10+ | 16911.32 грн |
25+ | 16539.1 грн |
40+ | 15218.57 грн |
CY7C1612KV18-300BZXI |
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
товар відсутній
CY7C1613KV18-300BZI |
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
товар відсутній
CY7C1615KV18-250BZXC |
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
товар відсутній
CY7C1618KV18-300BZXC |
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
товар відсутній
CY7C1643KV18-450BZI |
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
товар відсутній
CY7C1645KV18-400BZXI |
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
на замовлення 6 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 22408.3 грн |
CY7C1645KV18-450BZXI |
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
товар відсутній
CY7C1650KV18-450BZC |
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
товар відсутній
CY7C1663KV18-550BZXC |
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
товар відсутній
CY7C1670KV18-450BZXC |
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
товар відсутній
CY7C2262XV18-366BZXC |
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 366 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 366 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
товар відсутній
CY7C2265XV18-633BZXC |
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 633 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 633 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
товар відсутній
CY7C2665KV18-450BZI |
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
товар відсутній
CY7C2665KV18-450BZXI |
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
товар відсутній
CY7C2665KV18-550BZI |
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
товар відсутній
CY7C2670KV18-550BZI |
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
товар відсутній
BSC082N10LSGATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 13.8A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 100A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V
Description: MOSFET N-CH 100V 13.8A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 100A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V
на замовлення 10790 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 199.15 грн |
10+ | 159.59 грн |
100+ | 127.03 грн |
500+ | 100.87 грн |
1000+ | 85.59 грн |
2000+ | 81.31 грн |
BSC0901NSI |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 28A 8TDSON
Description: MOSFET N-CH 30V 28A 8TDSON
на замовлення 7499 шт:
термін постачання 21-31 дні (днів)BSC0904NSI |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 20A 8TDSON
Description: MOSFET N-CH 30V 20A 8TDSON
на замовлення 324 шт:
термін постачання 21-31 дні (днів)BSC0906NSATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 18A/63A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
Description: MOSFET N-CH 30V 18A/63A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
на замовлення 10882 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 46.55 грн |
10+ | 39.09 грн |
100+ | 27.04 грн |
500+ | 21.2 грн |
1000+ | 18.04 грн |
2000+ | 16.07 грн |
BSC109N10NS3GATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 63A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 46A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 45µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Description: MOSFET N-CH 100V 63A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 46A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 45µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 31943 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 118.27 грн |
10+ | 93.1 грн |
100+ | 72.42 грн |
500+ | 57.6 грн |
1000+ | 46.92 грн |
2000+ | 44.17 грн |
BSC196N10NSGATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 8.5A/45A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 45A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 42µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
Description: MOSFET N-CH 100V 8.5A/45A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 45A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 42µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
на замовлення 52555 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 87.75 грн |
10+ | 69 грн |
100+ | 53.67 грн |
500+ | 42.69 грн |
1000+ | 34.78 грн |
2000+ | 32.74 грн |
BSC22DN20NS3 G |
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 7A 8TDSON
Description: MOSFET N-CH 200V 7A 8TDSON
на замовлення 11863 шт:
термін постачання 21-31 дні (днів)BSC360N15NS3GATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 33A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 25A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 75 V
Description: MOSFET N-CH 150V 33A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 25A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 75 V
на замовлення 15246 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 125.9 грн |
10+ | 100.89 грн |
100+ | 80.27 грн |
500+ | 63.74 грн |
1000+ | 54.08 грн |
2000+ | 51.38 грн |
BSC882N03MSGATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 34V 22A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
Description: MOSFET N-CH 34V 22A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
товар відсутній
BSC883N03LSGATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 34V 17A TDSON-8
Description: MOSFET N-CH 34V 17A TDSON-8
товар відсутній
BSC883N03MSGATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 34V 19A TDSON-8
Description: MOSFET N-CH 34V 19A TDSON-8
товар відсутній
BSC886N03LSGATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A/65A TDSON
Description: MOSFET N-CH 30V 13A/65A TDSON
товар відсутній
BSC889N03MSGATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A 44A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta) 44A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Description: MOSFET N-CH 30V 12A 44A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta) 44A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
товар відсутній
BSF030NE2LQ |
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 24A WDSON-2
Description: MOSFET N-CH 25V 24A WDSON-2
на замовлення 18003 шт:
термін постачання 21-31 дні (днів)BSF077N06NT3GXUMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 13A WDSON-2
Description: MOSFET N-CH 60V 13A WDSON-2
товар відсутній
BSO080P03NS3EGXUMA1 |
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 12A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.8A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3.1V @ 150µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 15 V
Description: MOSFET P-CH 30V 12A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.8A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3.1V @ 150µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 15 V
товар відсутній
BSO080P03SHXUMA1 |
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 12.6A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Description: MOSFET P-CH 30V 12.6A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
на замовлення 3412 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 118.27 грн |
10+ | 94.64 грн |
100+ | 75.3 грн |
500+ | 59.79 грн |
1000+ | 50.73 грн |
BSO130P03SHXUMA1 |
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 9.2A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11.7A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 140µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 25 V
Description: MOSFET P-CH 30V 9.2A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11.7A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 140µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 25 V
на замовлення 2471 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 90.8 грн |
10+ | 71.79 грн |
100+ | 55.81 грн |
500+ | 44.4 грн |
1000+ | 36.17 грн |
BSO150N03MDGXUMA1 |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 8A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Description: MOSFET 2N-CH 30V 8A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
на замовлення 11545 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 79.36 грн |
10+ | 62.53 грн |
100+ | 48.66 грн |
500+ | 38.7 грн |
1000+ | 31.53 грн |