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IPA65R600C6XKSA1 IPA65R600C6XKSA1 Infineon Technologies DS_448_IPx65R600C6.pdf Description: MOSFET N-CH 650V 7.3A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
товар відсутній
IPA65R660CFDXKSA1 IPA65R660CFDXKSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CH 650V 6A TO220
товар відсутній
IPI100N04S4H2AKSA1 IPI100N04S4H2AKSA1 Infineon Technologies IPx100N04S4-H2.pdf Description: MOSFET N-CH 40V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 25 V
товар відсутній
IPI110N20N3GAKSA1 IPI110N20N3GAKSA1 Infineon Technologies IPP_I_110N20N3+G_IPB107N20N3+G+Rev2.3.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124968e7d1f18e7 Description: MOSFET N-CH 200V 88A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 88A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
товар відсутній
IPI111N15N3GAKSA1 IPI111N15N3GAKSA1 Infineon Technologies IPP_I111N15N3+G_IPB108N15N3+G_Rev2.1.pdf?folderId=db3a304325305e6d01254a567c041b4e&fileId=db3a304325305e6d01254a5795541b4f Description: MOSFET N-CH 150V 83A TO262-3
товар відсутній
IPI120N04S401AKSA1 IPI120N04S401AKSA1 Infineon Technologies Infineon-IPP_B_I120N04S4_01-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c2ebd3b5d27&ack=t Description: MOSFET N-CH 40V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
на замовлення 235 шт:
термін постачання 21-31 дні (днів)
2+251.04 грн
10+ 203.39 грн
100+ 164.5 грн
Мінімальне замовлення: 2
IPI120N04S402AKSA1 IPI120N04S402AKSA1 Infineon Technologies Infineon-IPP_B_I120N04S4_02-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c33093d5d37&ack=t Description: MOSFET N-CH 40V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10740 pF @ 25 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
2+215.94 грн
10+ 174.58 грн
100+ 141.25 грн
500+ 117.84 грн
Мінімальне замовлення: 2
IPI200N25N3GAKSA1 IPI200N25N3GAKSA1 Infineon Technologies IPP_B_I_200N25N3+G+Rev2.4.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496b87e9f1971 Description: MOSFET N-CH 250V 64A TO262-3
товар відсутній
IPI320N20N3GAKSA1 IPI320N20N3GAKSA1 Infineon Technologies IPP_B_I_320N20N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124967064ba184a Description: MOSFET N-CH 200V 34A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
товар відсутній
IPI50R250CPXKSA1 IPI50R250CPXKSA1 Infineon Technologies IPI50R250CP_rev2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a304320896aa20120d244f52350be Description: MOSFET N-CH 500V 13A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
товар відсутній
IPI50R299CPXKSA1 IPI50R299CPXKSA1 Infineon Technologies IPI50R299CP_rev2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a304320896aa20120d24ec76250de Description: MOSFET N-CH 500V 12A TO262-3
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
IPI530N15N3GXKSA1 IPI530N15N3GXKSA1 Infineon Technologies IPD530N15N3_Rev2.5.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432662379201266a1f6dd2227c Description: MOSFET N-CH 150V 21A TO262-3
товар відсутній
IPI600N25N3GAKSA1 IPI600N25N3GAKSA1 Infineon Technologies IPP_B_600N25N3+G+Rev2.3.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496c9548d199c Description: MOSFET N-CH 250V 25A TO262-3
товар відсутній
IPI65R110CFDXKSA1 IPI65R110CFDXKSA1 Infineon Technologies Infineon-IPX65R110CFD-DS-v02_06-en.pdf?fileId=db3a30433004641301306abd8e2041b1 Description: MOSFET N-CH 650V 31.2A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
товар відсутній
IPI65R310CFDXKSA1 IPI65R310CFDXKSA1 Infineon Technologies IPP65R310CFD_2_2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432f91014f012f9caff105741c Description: MOSFET N-CH 650V 11.4A TO262-3
товар відсутній
IPI65R420CFDXKSA1 IPI65R420CFDXKSA1 Infineon Technologies IPx65R420CFD.pdf Description: MOSFET N-CH 650V 8.7A TO262
товар відсутній
IPI65R660CFDXKSA1 IPI65R660CFDXKSA1 Infineon Technologies Infineon-IPX65R660CFD-DS-v02_05-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432f29829e012f2efe7ac539b4 Description: MOSFET N-CH 650V 6A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
товар відсутній
IPI80N04S403AKSA1 IPI80N04S403AKSA1 Infineon Technologies Infineon-IPP_B_I80N04S4_03-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c53fc8b5dab&ack=t Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 53µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V
на замовлення 498 шт:
термін постачання 21-31 дні (днів)
2+177.03 грн
10+ 141.74 грн
100+ 112.77 грн
Мінімальне замовлення: 2
IPI80N04S404AKSA1 IPI80N04S404AKSA1 Infineon Technologies Infineon-IPP_B_I80N04S4_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c71d4085dfa&ack=t Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 25 V
товар відсутній
IPI80N04S4L04AKSA1 IPI80N04S4L04AKSA1 Infineon Technologies IPx80N04S4L-04.pdf Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
товар відсутній
IPI90N04S402AKSA1 IPI90N04S402AKSA1 Infineon Technologies Infineon-IPP_B_I90N04S4_02-DS-v01_01-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c7efe515e2f&ack=t Description: MOSFET N-CH 40V 90A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9430 pF @ 25 V
на замовлення 443 шт:
термін постачання 21-31 дні (днів)
2+208.31 грн
50+ 158.96 грн
100+ 136.25 грн
Мінімальне замовлення: 2
IPP100N04S4H2AKSA1 IPP100N04S4H2AKSA1 Infineon Technologies IPx100N04S4-H2.pdf Description: MOSFET N-CH 40V 100A TO220-3-1
товар відсутній
IPP110N20NAAKSA1 IPP110N20NAAKSA1 Infineon Technologies IPP110N20NA_IPB107N20NA+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a3043300464130130307ce52a20a3 Description: MOSFET N-CH 200V 88A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 88A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
на замовлення 2313 шт:
термін постачання 21-31 дні (днів)
1+436.46 грн
50+ 335.25 грн
100+ 310.65 грн
IPP120N04S401AKSA1 IPP120N04S401AKSA1 Infineon Technologies IPx120N04S4-01.pdf Description: MOSFET N-CH 40V 120A TO220-3-1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
товар відсутній
IPP120N04S402AKSA1 IPP120N04S402AKSA1 Infineon Technologies Infineon-IPP_B_I120N04S4_02-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c33093d5d37&ack=t Description: MOSFET N-CH 40V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10740 pF @ 25 V
на замовлення 332 шт:
термін постачання 21-31 дні (днів)
2+215.94 грн
10+ 174.58 грн
100+ 141.25 грн
Мінімальне замовлення: 2
IPP65R380C6XKSA1 IPP65R380C6XKSA1 Infineon Technologies IPP65R380C6+2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432ba3fa6f012bf2d555ca77de Description: MOSFET N-CH 650V 10.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
товар відсутній
IPP65R600C6XKSA1 IPP65R600C6XKSA1 Infineon Technologies IPP65R600C6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432ac1eb91012ac74e318c2c70 Description: MOSFET N-CH 650V 7.3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
товар відсутній
IPP80N04S403AKSA1 IPP80N04S403AKSA1 Infineon Technologies Infineon-IPP_B_I80N04S4_03-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c53fc8b5dab&ack=t Description: MOSFET N-CH 40V 80A TO220-3-1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 53µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V
товар відсутній
IPP80N04S404AKSA1 IPP80N04S404AKSA1 Infineon Technologies Infineon-IPP_B_I80N04S4_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c71d4085dfa&ack=t Description: MOSFET N-CH 40V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 25 V
на замовлення 470 шт:
термін постачання 21-31 дні (днів)
2+163.29 грн
50+ 126.54 грн
100+ 104.11 грн
Мінімальне замовлення: 2
IPP90N04S402AKSA1 IPP90N04S402AKSA1 Infineon Technologies Infineon-IPP_B_I90N04S4_02-DS-v01_01-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c7efe515e2f&ack=t Description: MOSFET N-CH 40V 90A TO220-3-1
товар відсутній
IPW65R190C6FKSA1 IPW65R190C6FKSA1 Infineon Technologies IPW65R190C6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433004641301300803924c3d8c Description: MOSFET N-CH 650V 20.2A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
товар відсутній
IPW65R280C6FKSA1 IPW65R280C6FKSA1 Infineon Technologies IPW65R280C6_2_0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30432a7fedfc012a8aceded858e0 Description: MOSFET N-CH 650V 13.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
товар відсутній
IPW65R660CFDFKSA1 IPW65R660CFDFKSA1 Infineon Technologies IPW65R660CFD_2.41.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432f29829e012f2efe7ac539b4 Description: MOSFET N-CH 700V 6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
товар відсутній
SGP20N60HSXKSA1 SGP20N60HSXKSA1 Infineon Technologies SGx20N60HS.pdf Description: IGBT 600V 36A 178W TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 178 W
товар відсутній
SPP15P10PHXKSA1 SPP15P10PHXKSA1 Infineon Technologies SPP15P10PH.pdf Description: MOSFET P-CH 100V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
товар відсутній
CY7C65634-28LTXC CY7C65634-28LTXC Infineon Technologies download Description: IC USB HUB CTRLR 2PORT LP 28QFN
Packaging: Tray
Package / Case: 28-WFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 5.25V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 28-QFN (5x5)
DigiKey Programmable: Not Verified
на замовлення 9029 шт:
термін постачання 21-31 дні (днів)
1+306.74 грн
10+ 264.96 грн
25+ 250.5 грн
80+ 203.75 грн
230+ 193.29 грн
490+ 173.44 грн
980+ 143.88 грн
2450+ 136.68 грн
CY7C65634-48AXC CY7C65634-48AXC Infineon Technologies download Description: IC USB HUB CTRL 2PORT 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 5.25V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 48-TQFP (7x7)
DigiKey Programmable: Not Verified
на замовлення 2614 шт:
термін постачання 21-31 дні (днів)
1+321.24 грн
10+ 277.75 грн
25+ 262.52 грн
80+ 213.52 грн
250+ 202.57 грн
500+ 181.77 грн
1000+ 150.78 грн
2500+ 143.25 грн
CY7C65632-28LTXC CY7C65632-28LTXC Infineon Technologies download Description: IC USB HUB CTRLR 4PORT LP 28QFN
Packaging: Tray
Package / Case: 28-WFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 5.25V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 28-QFN (5x5)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3204 шт:
термін постачання 21-31 дні (днів)
1+368.55 грн
10+ 319.04 грн
25+ 301.61 грн
80+ 245.3 грн
230+ 232.73 грн
490+ 208.83 грн
980+ 173.23 грн
2450+ 164.57 грн
CY7C65632-48AXC CY7C65632-48AXC Infineon Technologies download Description: IC USB HUB CTRLR 4PORT LP 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 5.25V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2274 шт:
термін постачання 21-31 дні (днів)
1+385.34 грн
10+ 333.22 грн
25+ 315.05 грн
80+ 256.23 грн
250+ 243.09 грн
500+ 218.12 грн
1000+ 180.94 грн
CY7C65642-48AXC CY7C65642-48AXC Infineon Technologies Infineon-CY7C65642_HX2VL_VERY_LOW-POWER_USB_2.0_TETRAHUB_CONTROLLER-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecba5984534&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC USB HUB CTRLR 4PORT LP 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Function: Controller
Interface: I2C, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 5.25V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 48-TQFP (7x7)
DigiKey Programmable: Not Verified
на замовлення 1647 шт:
термін постачання 21-31 дні (днів)
1+454.01 грн
10+ 392.15 грн
25+ 370.74 грн
80+ 301.54 грн
250+ 286.08 грн
500+ 256.69 грн
1000+ 212.94 грн
CY8C20446AS-24LQXI CY8C20446AS-24LQXI Infineon Technologies CY8C20336H%2C446H.pdf Description: IC CAPSENSE AP 16KB 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
на замовлення 312 шт:
термін постачання 21-31 дні (днів)
1+312.08 грн
10+ 270.11 грн
25+ 255.35 грн
80+ 207.7 грн
230+ 197.04 грн
CY14B101Q2A-SXI CY14B101Q2A-SXI Infineon Technologies Infineon-CY14C101Q_CY14B101Q_CY14E101Q_1_MBIT_(128K_X_8)_SERIAL_(SPI)_NVSRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfce093450&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration- Description: IC NVSRAM 1MBIT SPI 40MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 1863 шт:
термін постачання 21-31 дні (днів)
1+785.17 грн
10+ 700.91 грн
25+ 684.96 грн
97+ 562.85 грн
291+ 534.92 грн
582+ 529.56 грн
1067+ 503.57 грн
CY7C1413KV18-333BZXI CY7C1413KV18-333BZXI Infineon Technologies Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+4345.53 грн
CY7C2265KV18-550BZXC CY7C2265KV18-550BZXC Infineon Technologies Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+8842.15 грн
10+ 7665.11 грн
CY7C1480BV25-200BZXC CY7C1480BV25-200BZXC Infineon Technologies Infineon-CY7C1480BV25_72-Mbit_(2_M_36)_Pipelined_Sync_SRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4514c39be Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
товар відсутній
CY7C1480BV33-250BZXC CY7C1480BV33-250BZXC Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
товар відсутній
IR2130STRPBF IR2130STRPBF Infineon Technologies ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
CY7C1643KV18-450BZC CY7C1643KV18-450BZC Infineon Technologies download Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
товар відсутній
CY7C2663KV18-450BZI CY7C2663KV18-450BZI Infineon Technologies Infineon-CY7C2663KV18_CY7C2665KV18_144-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec22b793711 Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
на замовлення 176 шт:
термін постачання 21-31 дні (днів)
1+26007.57 грн
10+ 24492.58 грн
25+ 24014.87 грн
CY7C1643KV18-400BZC CY7C1643KV18-400BZC Infineon Technologies download Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
товар відсутній
CY7C1618KV18-333BZXC CY7C1618KV18-333BZXC Infineon Technologies Infineon-CY7C1618KV18_CY7C1620KV18_144-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec241b9372f Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
товар відсутній
CY7C1668KV18-550BZXC CY7C1668KV18-550BZXC Infineon Technologies Infineon-CY7C1668KV18_CY7C1670KV18_144-Mbit_DDR_II%2B_SRAM_Two-Word_Burst_Architecture_%282.5_Cycle_Read_Latency%29-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec29fe53791 Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
товар відсутній
CY7C1612KV18-333BZXC CY7C1612KV18-333BZXC Infineon Technologies Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
товар відсутній
CY7C1613KV18-300BZXC CY7C1613KV18-300BZXC Infineon Technologies Infineon-CY7C1613KV18_CY7C1615KV18_144-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec23aab3726 Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
товар відсутній
CY7C1612KV18-250BZXC CY7C1612KV18-250BZXC Infineon Technologies Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
товар відсутній
CY7C2663KV18-550BZXC CY7C2663KV18-550BZXC Infineon Technologies Infineon-CY7C2663KV18_CY7C2665KV18_144-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec22b793711 Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
1+30611.02 грн
10+ 28828.17 грн
CY14MB256J1-SXI CY14MB256J1-SXI Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 256KBIT I2C 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 3.4 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: I²C
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товар відсутній
CY7C1614KV18-250BZI CY7C1614KV18-250BZI Infineon Technologies Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
товар відсутній
CY8CMBR2016-24LQXI CY8CMBR2016-24LQXI Infineon Technologies Infineon-CY8CMBR2016_CapSense_Express_16_Button_Matrix_Controller-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec7ec1f3fd2&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CAP BUTTON CTRLR 48QFN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 3.3mA
Number of Inputs: Up to 16
Supplier Device Package: 48-QFN (6x6)
Proximity Detection: No
LED Driver Channels: Up to 16
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 977 шт:
термін постачання 21-31 дні (днів)
1+311.32 грн
10+ 269.74 грн
25+ 255.03 грн
80+ 207.43 грн
230+ 196.79 грн
490+ 187.28 грн
CY7C1612KV18-333BZC CY7C1612KV18-333BZC Infineon Technologies Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
товар відсутній
IPA65R600C6XKSA1 DS_448_IPx65R600C6.pdf
IPA65R600C6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
товар відсутній
IPA65R660CFDXKSA1 Part_Number_Guide_Web.pdf
IPA65R660CFDXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 6A TO220
товар відсутній
IPI100N04S4H2AKSA1 IPx100N04S4-H2.pdf
IPI100N04S4H2AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 25 V
товар відсутній
IPI110N20N3GAKSA1 IPP_I_110N20N3+G_IPB107N20N3+G+Rev2.3.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124968e7d1f18e7
IPI110N20N3GAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 88A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 88A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
товар відсутній
IPI111N15N3GAKSA1 IPP_I111N15N3+G_IPB108N15N3+G_Rev2.1.pdf?folderId=db3a304325305e6d01254a567c041b4e&fileId=db3a304325305e6d01254a5795541b4f
IPI111N15N3GAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 83A TO262-3
товар відсутній
IPI120N04S401AKSA1 Infineon-IPP_B_I120N04S4_01-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c2ebd3b5d27&ack=t
IPI120N04S401AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
на замовлення 235 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+251.04 грн
10+ 203.39 грн
100+ 164.5 грн
Мінімальне замовлення: 2
IPI120N04S402AKSA1 Infineon-IPP_B_I120N04S4_02-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c33093d5d37&ack=t
IPI120N04S402AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10740 pF @ 25 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+215.94 грн
10+ 174.58 грн
100+ 141.25 грн
500+ 117.84 грн
Мінімальне замовлення: 2
IPI200N25N3GAKSA1 IPP_B_I_200N25N3+G+Rev2.4.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496b87e9f1971
IPI200N25N3GAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 64A TO262-3
товар відсутній
IPI320N20N3GAKSA1 IPP_B_I_320N20N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124967064ba184a
IPI320N20N3GAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 34A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
товар відсутній
IPI50R250CPXKSA1 IPI50R250CP_rev2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a304320896aa20120d244f52350be
IPI50R250CPXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 13A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
товар відсутній
IPI50R299CPXKSA1 IPI50R299CP_rev2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a304320896aa20120d24ec76250de
IPI50R299CPXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 12A TO262-3
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
IPI530N15N3GXKSA1 IPD530N15N3_Rev2.5.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432662379201266a1f6dd2227c
IPI530N15N3GXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 21A TO262-3
товар відсутній
IPI600N25N3GAKSA1 IPP_B_600N25N3+G+Rev2.3.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496c9548d199c
IPI600N25N3GAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 25A TO262-3
товар відсутній
IPI65R110CFDXKSA1 Infineon-IPX65R110CFD-DS-v02_06-en.pdf?fileId=db3a30433004641301306abd8e2041b1
IPI65R110CFDXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 31.2A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
товар відсутній
IPI65R310CFDXKSA1 IPP65R310CFD_2_2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432f91014f012f9caff105741c
IPI65R310CFDXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11.4A TO262-3
товар відсутній
IPI65R420CFDXKSA1 IPx65R420CFD.pdf
IPI65R420CFDXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO262
товар відсутній
IPI65R660CFDXKSA1 Infineon-IPX65R660CFD-DS-v02_05-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432f29829e012f2efe7ac539b4
IPI65R660CFDXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 6A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
товар відсутній
IPI80N04S403AKSA1 Infineon-IPP_B_I80N04S4_03-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c53fc8b5dab&ack=t
IPI80N04S403AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 53µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V
на замовлення 498 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+177.03 грн
10+ 141.74 грн
100+ 112.77 грн
Мінімальне замовлення: 2
IPI80N04S404AKSA1 Infineon-IPP_B_I80N04S4_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c71d4085dfa&ack=t
IPI80N04S404AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 25 V
товар відсутній
IPI80N04S4L04AKSA1 IPx80N04S4L-04.pdf
IPI80N04S4L04AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
товар відсутній
IPI90N04S402AKSA1 Infineon-IPP_B_I90N04S4_02-DS-v01_01-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c7efe515e2f&ack=t
IPI90N04S402AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 90A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9430 pF @ 25 V
на замовлення 443 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+208.31 грн
50+ 158.96 грн
100+ 136.25 грн
Мінімальне замовлення: 2
IPP100N04S4H2AKSA1 IPx100N04S4-H2.pdf
IPP100N04S4H2AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO220-3-1
товар відсутній
IPP110N20NAAKSA1 IPP110N20NA_IPB107N20NA+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a3043300464130130307ce52a20a3
IPP110N20NAAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 88A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 88A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
на замовлення 2313 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+436.46 грн
50+ 335.25 грн
100+ 310.65 грн
IPP120N04S401AKSA1 IPx120N04S4-01.pdf
IPP120N04S401AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 120A TO220-3-1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
товар відсутній
IPP120N04S402AKSA1 Infineon-IPP_B_I120N04S4_02-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c33093d5d37&ack=t
IPP120N04S402AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10740 pF @ 25 V
на замовлення 332 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+215.94 грн
10+ 174.58 грн
100+ 141.25 грн
Мінімальне замовлення: 2
IPP65R380C6XKSA1 IPP65R380C6+2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432ba3fa6f012bf2d555ca77de
IPP65R380C6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 10.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
товар відсутній
IPP65R600C6XKSA1 IPP65R600C6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432ac1eb91012ac74e318c2c70
IPP65R600C6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
товар відсутній
IPP80N04S403AKSA1 Infineon-IPP_B_I80N04S4_03-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c53fc8b5dab&ack=t
IPP80N04S403AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220-3-1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 53µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V
товар відсутній
IPP80N04S404AKSA1 Infineon-IPP_B_I80N04S4_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c71d4085dfa&ack=t
IPP80N04S404AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 25 V
на замовлення 470 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+163.29 грн
50+ 126.54 грн
100+ 104.11 грн
Мінімальне замовлення: 2
IPP90N04S402AKSA1 Infineon-IPP_B_I90N04S4_02-DS-v01_01-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c7efe515e2f&ack=t
IPP90N04S402AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 90A TO220-3-1
товар відсутній
IPW65R190C6FKSA1 IPW65R190C6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433004641301300803924c3d8c
IPW65R190C6FKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 20.2A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
товар відсутній
IPW65R280C6FKSA1 IPW65R280C6_2_0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30432a7fedfc012a8aceded858e0
IPW65R280C6FKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 13.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
товар відсутній
IPW65R660CFDFKSA1 IPW65R660CFD_2.41.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432f29829e012f2efe7ac539b4
IPW65R660CFDFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
товар відсутній
SGP20N60HSXKSA1 SGx20N60HS.pdf
SGP20N60HSXKSA1
Виробник: Infineon Technologies
Description: IGBT 600V 36A 178W TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 178 W
товар відсутній
SPP15P10PHXKSA1 SPP15P10PH.pdf
SPP15P10PHXKSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
товар відсутній
CY7C65634-28LTXC download
CY7C65634-28LTXC
Виробник: Infineon Technologies
Description: IC USB HUB CTRLR 2PORT LP 28QFN
Packaging: Tray
Package / Case: 28-WFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 5.25V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 28-QFN (5x5)
DigiKey Programmable: Not Verified
на замовлення 9029 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+306.74 грн
10+ 264.96 грн
25+ 250.5 грн
80+ 203.75 грн
230+ 193.29 грн
490+ 173.44 грн
980+ 143.88 грн
2450+ 136.68 грн
CY7C65634-48AXC download
CY7C65634-48AXC
Виробник: Infineon Technologies
Description: IC USB HUB CTRL 2PORT 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 5.25V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 48-TQFP (7x7)
DigiKey Programmable: Not Verified
на замовлення 2614 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+321.24 грн
10+ 277.75 грн
25+ 262.52 грн
80+ 213.52 грн
250+ 202.57 грн
500+ 181.77 грн
1000+ 150.78 грн
2500+ 143.25 грн
CY7C65632-28LTXC download
CY7C65632-28LTXC
Виробник: Infineon Technologies
Description: IC USB HUB CTRLR 4PORT LP 28QFN
Packaging: Tray
Package / Case: 28-WFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 5.25V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 28-QFN (5x5)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3204 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+368.55 грн
10+ 319.04 грн
25+ 301.61 грн
80+ 245.3 грн
230+ 232.73 грн
490+ 208.83 грн
980+ 173.23 грн
2450+ 164.57 грн
CY7C65632-48AXC download
CY7C65632-48AXC
Виробник: Infineon Technologies
Description: IC USB HUB CTRLR 4PORT LP 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 5.25V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2274 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+385.34 грн
10+ 333.22 грн
25+ 315.05 грн
80+ 256.23 грн
250+ 243.09 грн
500+ 218.12 грн
1000+ 180.94 грн
CY7C65642-48AXC Infineon-CY7C65642_HX2VL_VERY_LOW-POWER_USB_2.0_TETRAHUB_CONTROLLER-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecba5984534&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C65642-48AXC
Виробник: Infineon Technologies
Description: IC USB HUB CTRLR 4PORT LP 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Function: Controller
Interface: I2C, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 5.25V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 48-TQFP (7x7)
DigiKey Programmable: Not Verified
на замовлення 1647 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+454.01 грн
10+ 392.15 грн
25+ 370.74 грн
80+ 301.54 грн
250+ 286.08 грн
500+ 256.69 грн
1000+ 212.94 грн
CY8C20446AS-24LQXI CY8C20336H%2C446H.pdf
CY8C20446AS-24LQXI
Виробник: Infineon Technologies
Description: IC CAPSENSE AP 16KB 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
на замовлення 312 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+312.08 грн
10+ 270.11 грн
25+ 255.35 грн
80+ 207.7 грн
230+ 197.04 грн
CY14B101Q2A-SXI Infineon-CY14C101Q_CY14B101Q_CY14E101Q_1_MBIT_(128K_X_8)_SERIAL_(SPI)_NVSRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfce093450&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-
CY14B101Q2A-SXI
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 40MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 1863 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+785.17 грн
10+ 700.91 грн
25+ 684.96 грн
97+ 562.85 грн
291+ 534.92 грн
582+ 529.56 грн
1067+ 503.57 грн
CY7C1413KV18-333BZXI Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign
CY7C1413KV18-333BZXI
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+4345.53 грн
CY7C2265KV18-550BZXC Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b
CY7C2265KV18-550BZXC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+8842.15 грн
10+ 7665.11 грн
CY7C1480BV25-200BZXC Infineon-CY7C1480BV25_72-Mbit_(2_M_36)_Pipelined_Sync_SRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4514c39be
CY7C1480BV25-200BZXC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
товар відсутній
CY7C1480BV33-250BZXC download
CY7C1480BV33-250BZXC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
товар відсутній
IR2130STRPBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
IR2130STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
CY7C1643KV18-450BZC download
CY7C1643KV18-450BZC
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
товар відсутній
CY7C2663KV18-450BZI Infineon-CY7C2663KV18_CY7C2665KV18_144-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec22b793711
CY7C2663KV18-450BZI
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
на замовлення 176 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+26007.57 грн
10+ 24492.58 грн
25+ 24014.87 грн
CY7C1643KV18-400BZC download
CY7C1643KV18-400BZC
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
товар відсутній
CY7C1618KV18-333BZXC Infineon-CY7C1618KV18_CY7C1620KV18_144-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec241b9372f
CY7C1618KV18-333BZXC
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
товар відсутній
CY7C1668KV18-550BZXC Infineon-CY7C1668KV18_CY7C1670KV18_144-Mbit_DDR_II%2B_SRAM_Two-Word_Burst_Architecture_%282.5_Cycle_Read_Latency%29-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec29fe53791
CY7C1668KV18-550BZXC
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
товар відсутній
CY7C1612KV18-333BZXC Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
CY7C1612KV18-333BZXC
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
товар відсутній
CY7C1613KV18-300BZXC Infineon-CY7C1613KV18_CY7C1615KV18_144-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec23aab3726
CY7C1613KV18-300BZXC
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
товар відсутній
CY7C1612KV18-250BZXC Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
CY7C1612KV18-250BZXC
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
товар відсутній
CY7C2663KV18-550BZXC Infineon-CY7C2663KV18_CY7C2665KV18_144-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec22b793711
CY7C2663KV18-550BZXC
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+30611.02 грн
10+ 28828.17 грн
CY14MB256J1-SXI ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14MB256J1-SXI
Виробник: Infineon Technologies
Description: IC NVSRAM 256KBIT I2C 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 3.4 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: I²C
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товар відсутній
CY7C1614KV18-250BZI Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
CY7C1614KV18-250BZI
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
товар відсутній
CY8CMBR2016-24LQXI Infineon-CY8CMBR2016_CapSense_Express_16_Button_Matrix_Controller-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec7ec1f3fd2&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8CMBR2016-24LQXI
Виробник: Infineon Technologies
Description: IC CAP BUTTON CTRLR 48QFN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 3.3mA
Number of Inputs: Up to 16
Supplier Device Package: 48-QFN (6x6)
Proximity Detection: No
LED Driver Channels: Up to 16
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 977 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+311.32 грн
10+ 269.74 грн
25+ 255.03 грн
80+ 207.43 грн
230+ 196.79 грн
490+ 187.28 грн
CY7C1612KV18-333BZC Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
CY7C1612KV18-333BZC
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
товар відсутній
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