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ESD5V0L1B02VH6327XTSA1 ESD5V0L1B02VH6327XTSA1 Infineon Technologies ESD5V0L1B-02V.pdf Description: TVS DIODE 5VWM 25VC SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: PG-SC79-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 25V (Typ)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+6.73 грн
6000+ 6.33 грн
9000+ 5.61 грн
Мінімальне замовлення: 3000
ESD5V0S1U02VH6327XTSA1 ESD5V0S1U02VH6327XTSA1 Infineon Technologies ESD5V0S1U-02V.pdf Description: TVS DIODE 5VWM 14.5VC SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: PG-SC79-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.7V
Voltage - Clamping (Max) @ Ipp: 14.5V (Typ)
Power - Peak Pulse: 66W
Power Line Protection: No
Part Status: Active
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)
3000+6.79 грн
6000+ 6.39 грн
9000+ 5.66 грн
30000+ 5.25 грн
75000+ 4.46 грн
Мінімальне замовлення: 3000
ESD5V3S1B02LSE6327XTSA1 ESD5V3S1B02LSE6327XTSA1 Infineon Technologies ESD5V3S1B-02LS.pdf Description: TVS DIODE 5.3VWM 26VC TSSLP-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 17pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 26V
Power Line Protection: No
товар відсутній
ESD5V3S1U02LSE6327XTSA1 ESD5V3S1U02LSE6327XTSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: TVS DIODE 5.3VWM 15VC TSSLP-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 15V
товар відсутній
ESD5V5U5ULCE6327HTSA1 ESD5V5U5ULCE6327HTSA1 Infineon Technologies ESD5V5U5ULC_ESD_Transient_Protection_Diode_Infineon.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304331a821aa0131b36e85a20560 Description: TVS DIODE 5.5VWM 12VC SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 0.45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-SC74-6
Unidirectional Channels: 5
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
товар відсутній
ESD8V0R1B02ELSE6327XTSA1 ESD8V0R1B02ELSE6327XTSA1 Infineon Technologies ESD8V0R1B_Series.pdf Description: TVS DIODE 14VWM 28VC TSSLP-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSSLP-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
товар відсутній
ILD2035E6327HTSA1 ILD2035E6327HTSA1 Infineon Technologies ILD2035.pdf Description: IC LED DRVR RGLTR 350MA SC74-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 120kHz
Type: DC DC Regulator
Applications: Lighting
Current - Output / Channel: 350mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: SC-74-3D
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 22V
товар відсутній
IPL60R199CPAUMA1 IPL60R199CPAUMA1 Infineon Technologies IPL60R199CP_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043284aacd801284dca135b29ba Description: MOSFET N-CH 600V 16.4A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Supplier Device Package: PG-VSON-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
товар відсутній
IPL60R299CPAUMA1 IPL60R299CPAUMA1 Infineon Technologies IPL60R299CP_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043284aacd801285d1c1c8e27f4 Description: MOSFET N-CH 650V 11.1A 4VSON
товар відсутній
IPL60R385CPAUMA1 IPL60R385CPAUMA1 Infineon Technologies IPL60R385CP_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043284aacd801285d06e55327e3 Description: MOSFET N-CH 600V 9A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-VSON-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
товар відсутній
KP215F1701XTMA1 KP215F1701XTMA1 Infineon Technologies Infineon-KP215F1701-DS-v01_00-en.pdf?fileId=db3a30432ad629a6012af6a900a30b34 Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
товар відсутній
KP216H1416XTMA1 KP216H1416XTMA1 Infineon Technologies KP216H1416_DS_Rev_+1.1.pdf?folderId=db3a30431d8a6b3c011dd8fc5a954267&fileId=db3a30432ad629a6012af6b321c40b4a Description: SENSOR 21.76PSIA 4.5V DSOF8
Packaging: Tape & Reel (TR)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 7.25PSI ~ 21.76PSI (50kPa ~ 150kPa)
Pressure Type: Absolute
Accuracy: ±0.345PSI (±2.38kPa)
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Part Status: Active
товар відсутній
KP219N3621XTMA1 KP219N3621XTMA1 Infineon Technologies KP219N3621_DS_Rev_1.0.pdf?folderId=db3a30431d8a6b3c011dd8fc5a954267&fileId=db3a30432b5786da012b57a13ed40013 Description: SENSOR 14.79PSIA 4.95V
Packaging: Tape & Reel (TR)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.25 V ~ 4.95 V
Operating Pressure: 2.18PSI ~ 14.79PSI (15kPa ~ 102kPa)
Pressure Type: Absolute
Accuracy: ±0.652PSI (±4.5kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Port Style: No Port
Part Status: Active
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+280.32 грн
Мінімальне замовлення: 1500
KP235XTMA1 KP235XTMA1 Infineon Technologies KP235_DS_Rev_1.0.pdf?folderId=db3a30431d8a6b3c011dd8fc5a954267&fileId=db3a30432ad629a6012af67ba47c0b0f Description: SENSOR 16.68PSIA 4.5V DSOF8-16
Packaging: Tape & Reel (TR)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 5.8PSI ~ 16.68PSI (40kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.348PSI (±2.4kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Port Style: No Port
Maximum Pressure: 21.76PSI (150kPa)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
1500+241.28 грн
3000+ 224.34 грн
Мінімальне замовлення: 1500
KP236XTMA1 KP236XTMA1 Infineon Technologies Infineon-KP236-DS-v01_00-en.pdf?fileId=db3a30432ad629a6012af67dbdc20b14 Description: SENSOR 16.68PSIA 4.5V DSOF8-16
Packaging: Tape & Reel (TR)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 5.8PSI ~ 16.68PSI (40kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.29PSI (±2kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Port Style: No Port
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
1500+205.94 грн
Мінімальне замовлення: 1500
KP236N6165XTMA2 KP236N6165XTMA2 Infineon Technologies KP236N6165_DS_Rev_1.0.pdf?folderId=db3a30431d8a6b3c011dd8fc5a954267&fileId=db3a30432ad629a6012af68133600b1a Description: IC ANLG BAROMETRIC SNSR DSOF8-16
товар відсутній
PTFA220081MV4XUMA1 Infineon Technologies ptfa220081m-v4_ds_05.pdf?folderId=db3a304312fcb1bc01131b00814e17cf&fileId=db3a3043271faefd0127b603d2543329 Description: FET RF LDMOS 8W SON10
товар відсутній
PTFA220121MV4XUMA1 Infineon Technologies ptfa220121m-v4_ds_08.pdf?folderId=db3a304312fcb1bc01131b00814e17cf&fileId=db3a3043243b5f170124722c0b341900 Description: FET RF LDMOS 10W SON10
товар відсутній
PTMA180402FL V1 R250 Infineon Technologies ptma180402efl-v1_ds_08.pdf?folderId=db3a304312fcb1bc01131b00814e17cf&fileId=db3a304317a7483601183a5310e6580d Description: IC AMP RF LDMOS 40W H34265-8
товар відсутній
SN7002N H6327 SN7002N H6327 Infineon Technologies SN7002N_Rev2.6_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f6860601311934e76045d5 Description: MOSFET N-CH 60V 200MA SOT23
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
PTFA070601FV4XWSA1 PTFA070601FV4XWSA1 Infineon Technologies PTFA070601E,F.pdf Description: FET RF LDMOS 60W H37265-2
товар відсутній
PTFA071701FV4XWSA1 PTFA071701FV4XWSA1 Infineon Technologies ptfa077101ef-v4_ds_rev03.pdf?folderId=db3a304412b407950112b4095d3b01ef&fileId=db3a304320d39d5901215d514b0e273d Description: FET RF LDMOS 170W H37248-2
товар відсутній
PTFB191501FV1XWSA1 PTFB191501FV1XWSA1 Infineon Technologies PTFB191501E-F+V1+Datasheet+Rev02.pdf?folderId=db3a304312fcb1bc01131b00814e17cf&fileId=db3a30432313ff5e0123a472bfdd277f Description: FET RF LDMOS 150W H37248-2
товар відсутній
PTFB210801FAV1XWSA1 PTFB210801FAV1XWSA1 Infineon Technologies ptfb210801fa_ds_01.pdf?folderId=db3a304312fcb1bc01131b00814e17cf&fileId=db3a30433072cd8f0130beef05e41d24 Description: FET RF LDMOS 80W H37265-2
товар відсутній
PTFB211501FV1XWSA1 PTFB211501FV1XWSA1 Infineon Technologies Description: FET FR LDMOS 150W H37248-2
товар відсутній
PTFA041501FV4XWSA1 PTFA041501FV4XWSA1 Infineon Technologies PTFA041501E,F.pdf Description: FET RF LDMOS 150W H37248-2
товар відсутній
BUZ30AHXKSA1 BUZ30AHXKSA1 Infineon Technologies Buz30A+H+Rev+2.5.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a304325305e6d012596c75fb1290b Description: MOSFET N-CH 200V 21A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
товар відсутній
BUZ31HXKSA1 BUZ31HXKSA1 Infineon Technologies BUZ31_H.pdf Description: MOSFET N-CH 200V 14.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 5V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
товар відсутній
BUZ31L H BUZ31L H Infineon Technologies BUZ 31LH.pdf Description: MOSFET N-CH 200V 13.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7A, 5V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
товар відсутній
BUZ73HXKSA1 BUZ73HXKSA1 Infineon Technologies BUZ73_H.pdf Description: MOSFET N-CH 200V 7A TO220-3
товар відсутній
BUZ73H3046XKSA1 BUZ73H3046XKSA1 Infineon Technologies BUZ73_H.pdf Description: MOSFET N-CH 200V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
товар відсутній
BUZ73A H BUZ73A H Infineon Technologies BUZ73A_H.pdf Description: MOSFET N-CH 200V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
товар відсутній
BUZ73A H3046 BUZ73A H3046 Infineon Technologies BUZ73A_H.pdf Description: MOSFET N-CH 200V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
товар відсутній
BUZ73ALHXKSA1 BUZ73ALHXKSA1 Infineon Technologies BUZ73AL_H.pdf Description: MOSFET N-CH 200V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 5V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
товар відсутній
BUZ73LHXKSA1 BUZ73LHXKSA1 Infineon Technologies Description: MOSFET N-CH 200V 7A TO220-3
товар відсутній
ICE2PCS06HKLA1 ICE2PCS06HKLA1 Infineon Technologies ProductDatasheetICE2PCS06_v1.1+Mar2010.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a3043327f13e3013285ff4ecb2e77 Description: IC PFC CTRLR CCM 70KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 26V
Frequency - Switching: 58kHz ~ 70kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DIP-8
Current - Startup: 450 µA
товар відсутній
ICLS6021JXKLA1 ICLS6021JXKLA1 Infineon Technologies Data_Sheet_ICLS6x_Series.pdf?folderId=db3a304316f66ee801178c31a9af054a&fileId=db3a304330f686060131193d603545dd Description: IC LED DRIVER OFFLINE DIM 8DIP
товар відсутній
ICLS6022JXKLA1 ICLS6022JXKLA1 Infineon Technologies Data_Sheet_ICLS6x_Series.pdf?folderId=db3a304316f66ee801178c31a9af054a&fileId=db3a304330f686060131193d603545dd Description: IC LED DRIVER OFFLINE DIM 8DIP
товар відсутній
ICLS6023JXKLA1 ICLS6023JXKLA1 Infineon Technologies Data_Sheet_ICLS6x_Series.pdf?folderId=db3a304316f66ee801178c31a9af054a&fileId=db3a304330f686060131193d603545dd Description: IC LED DRIVER OFFLINE DIM 8DIP
товар відсутній
ICLS8023ZXKLA1 ICLS8023ZXKLA1 Infineon Technologies Data_Sheet_ICLS8023Z_800V_variant.pdf?folderId=db3a304316f66ee801178c31a9af054a&fileId=db3a3043321e499401324878d06724a2 Description: IC LED DRIVER OFFLINE DIM 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Number of Outputs: 1
Frequency: 65kHz
Type: AC DC Offline Switcher
Operating Temperature: -25°C ~ 130°C (TJ)
Internal Switch(s): Yes
Topology: Flyback
Supplier Device Package: PG-DIP-7-1
Dimming: PWM
Voltage - Supply (Min): 10.5V
Voltage - Supply (Max): 25V
Part Status: Obsolete
товар відсутній
IDY10S120XKSA1 Infineon Technologies IDY10S120.pdf Description: DIODE SCHOTTKY 1.2KV 5A TO247HC
товар відсутній
IDY15S120XKSA1 Infineon Technologies IDY15S120.pdf Description: DIODE SCHOTTKY 1.2KV 7.5A TO247
товар відсутній
IGA30N60H3XKSA1 IGA30N60H3XKSA1 Infineon Technologies IGA30N60H3.pdf Description: IGBT 600V 18A 43W TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 43 W
товар відсутній
IGW20N60H3FKSA1 IGW20N60H3FKSA1 Infineon Technologies IGW20N60H3_Rev1_1G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30432a40a650012a46c4621a2b81 Description: IGBT TRENCH FS 600V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/194ns
Switching Energy: 800µJ
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
на замовлення 241 шт:
термін постачання 21-31 дні (днів)
2+200.68 грн
30+ 155.04 грн
120+ 127.56 грн
Мінімальне замовлення: 2
IGW30N60H3FKSA1 IGW30N60H3FKSA1 Infineon Technologies INFNS30182-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/207ns
Switching Energy: 1.38mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
на замовлення 1655 шт:
термін постачання 21-31 дні (днів)
2+208.31 грн
30+ 159.1 грн
120+ 136.36 грн
510+ 113.75 грн
1020+ 97.4 грн
Мінімальне замовлення: 2
IHW20N135R3FKSA1 IHW20N135R3FKSA1 Infineon Technologies DS_IHW20N135R3.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433162923a0131897157e40e46 Description: IGBT 1350V 20A 310W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/335ns
Switching Energy: 1.3mJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 195 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 310 W
товар відсутній
IHW30N110R3FKSA1 IHW30N110R3FKSA1 Infineon Technologies DS_IHW30N110R3_1_2.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304327b897500127b963455e0089 Description: IGBT TRENCH 1100V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/350ns
Switching Energy: 1.15mJ (off)
Test Condition: 600V, 30A, 15Ohm, 15V
Gate Charge: 180 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1100 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 333 W
товар відсутній
IHY20N135R3XKSA1 Infineon Technologies IHY20N135R3.pdf Description: IGBT 1350V 40A 310W TO247HC-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: PG-TO247HC-3
IGBT Type: Trench
Td (on/off) @ 25°C: -/335ns
Switching Energy: 1.3mJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 195 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 310 W
товар відсутній
IHY30N160R2XKSA1 Infineon Technologies IHY30N160R2.pdf Description: IGBT 1600V 30A 312W TO247HC-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO247HC-3
IGBT Type: NPT
Td (on/off) @ 25°C: -/525ns
Switching Energy: 2.53mJ
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 312 W
товар відсутній
IKW20N60TAFKSA1 IKW20N60TAFKSA1 Infineon Technologies IGBT%20Selection%20Guide.pdf Description: IGBT 600V 40A 166W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 770µJ
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 166 W
товар відсутній
IKW30N60TAFKSA1 IKW30N60TAFKSA1 Infineon Technologies IKW30N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42889a63e1d Description: IGBT TRENCH/FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-21
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
товар відсутній
IKW50N60H3FKSA1 IKW50N60H3FKSA1 Infineon Technologies IKW50N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432a40a650012a47934b1e2bea Description: IGBT TRENCH FS 600V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/235ns
Switching Energy: 2.36mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 333 W
на замовлення 425 шт:
термін постачання 21-31 дні (днів)
1+459.35 грн
30+ 350.64 грн
120+ 300.54 грн
IPA057N06N3GXKSA1 IPA057N06N3GXKSA1 Infineon Technologies IPA057N06N3_Rev2+0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a3043284aacd8012882b3ac145428 Description: MOSFET N-CH 60V 60A TO220-3-31
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 60A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 58µA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V
товар відсутній
IPA093N06N3GXKSA1 IPA093N06N3GXKSA1 Infineon Technologies IPA093N06N3_Rev2+0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a3043284aacd8012882bf84115438 Description: MOSFET N-CH 60V 43A TO220-3-31
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO220-3-31
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
товар відсутній
IPA65R110CFDXKSA1 IPA65R110CFDXKSA1 Infineon Technologies Infineon-IPX65R110CFD-DS-v02_06-en.pdf?fileId=db3a30433004641301306abd8e2041b1 Description: MOSFET N-CH 650V 31.2A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
товар відсутній
IPA65R190C6XKSA1 IPA65R190C6XKSA1 Infineon Technologies IPx65R190C6.pdf Description: MOSFET N-CH 650V 20.2A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO220-3-111
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
товар відсутній
IPA65R190E6XKSA1 IPA65R190E6XKSA1 Infineon Technologies IPA65R190E6_2_0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30433004641301300747ef313b6b Description: MOSFET N-CH 650V 20.2A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO220-3-111
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
товар відсутній
IPA65R310CFDXKSA1 IPA65R310CFDXKSA1 Infineon Technologies IPP65R310CFD_2_2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432f91014f012f9caff105741c Description: MOSFET N-CH 650V 11.4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Supplier Device Package: PG-TO220-3-111
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
товар відсутній
IPA65R380C6XKSA1 IPA65R380C6XKSA1 Infineon Technologies IPA65R380C6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432ba3fa6f012bf2a58f67779f Description: MOSFET N-CH 650V 10.6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-3-111
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
товар відсутній
IPA65R420CFDXKSA1 IPA65R420CFDXKSA1 Infineon Technologies IPx65R420CFD.pdf Description: MOSFET N-CH 650V 8.7A TO220
товар відсутній
ESD5V0L1B02VH6327XTSA1 ESD5V0L1B-02V.pdf
ESD5V0L1B02VH6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5VWM 25VC SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: PG-SC79-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 25V (Typ)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+6.73 грн
6000+ 6.33 грн
9000+ 5.61 грн
Мінімальне замовлення: 3000
ESD5V0S1U02VH6327XTSA1 ESD5V0S1U-02V.pdf
ESD5V0S1U02VH6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5VWM 14.5VC SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: PG-SC79-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.7V
Voltage - Clamping (Max) @ Ipp: 14.5V (Typ)
Power - Peak Pulse: 66W
Power Line Protection: No
Part Status: Active
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+6.79 грн
6000+ 6.39 грн
9000+ 5.66 грн
30000+ 5.25 грн
75000+ 4.46 грн
Мінімальне замовлення: 3000
ESD5V3S1B02LSE6327XTSA1 ESD5V3S1B-02LS.pdf
ESD5V3S1B02LSE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 26VC TSSLP-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 17pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 26V
Power Line Protection: No
товар відсутній
ESD5V3S1U02LSE6327XTSA1 Part_Number_Guide_Web.pdf
ESD5V3S1U02LSE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 15VC TSSLP-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 15V
товар відсутній
ESD5V5U5ULCE6327HTSA1 ESD5V5U5ULC_ESD_Transient_Protection_Diode_Infineon.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304331a821aa0131b36e85a20560
ESD5V5U5ULCE6327HTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 12VC SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 0.45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-SC74-6
Unidirectional Channels: 5
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
товар відсутній
ESD8V0R1B02ELSE6327XTSA1 ESD8V0R1B_Series.pdf
ESD8V0R1B02ELSE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 14VWM 28VC TSSLP-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSSLP-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
товар відсутній
ILD2035E6327HTSA1 ILD2035.pdf
ILD2035E6327HTSA1
Виробник: Infineon Technologies
Description: IC LED DRVR RGLTR 350MA SC74-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 120kHz
Type: DC DC Regulator
Applications: Lighting
Current - Output / Channel: 350mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: SC-74-3D
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 22V
товар відсутній
IPL60R199CPAUMA1 IPL60R199CP_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043284aacd801284dca135b29ba
IPL60R199CPAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 16.4A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Supplier Device Package: PG-VSON-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
товар відсутній
IPL60R299CPAUMA1 IPL60R299CP_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043284aacd801285d1c1c8e27f4
IPL60R299CPAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11.1A 4VSON
товар відсутній
IPL60R385CPAUMA1 IPL60R385CP_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043284aacd801285d06e55327e3
IPL60R385CPAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-VSON-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
товар відсутній
KP215F1701XTMA1 Infineon-KP215F1701-DS-v01_00-en.pdf?fileId=db3a30432ad629a6012af6a900a30b34
KP215F1701XTMA1
Виробник: Infineon Technologies
Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
товар відсутній
KP216H1416XTMA1 KP216H1416_DS_Rev_+1.1.pdf?folderId=db3a30431d8a6b3c011dd8fc5a954267&fileId=db3a30432ad629a6012af6b321c40b4a
KP216H1416XTMA1
Виробник: Infineon Technologies
Description: SENSOR 21.76PSIA 4.5V DSOF8
Packaging: Tape & Reel (TR)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 7.25PSI ~ 21.76PSI (50kPa ~ 150kPa)
Pressure Type: Absolute
Accuracy: ±0.345PSI (±2.38kPa)
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Part Status: Active
товар відсутній
KP219N3621XTMA1 KP219N3621_DS_Rev_1.0.pdf?folderId=db3a30431d8a6b3c011dd8fc5a954267&fileId=db3a30432b5786da012b57a13ed40013
KP219N3621XTMA1
Виробник: Infineon Technologies
Description: SENSOR 14.79PSIA 4.95V
Packaging: Tape & Reel (TR)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.25 V ~ 4.95 V
Operating Pressure: 2.18PSI ~ 14.79PSI (15kPa ~ 102kPa)
Pressure Type: Absolute
Accuracy: ±0.652PSI (±4.5kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Port Style: No Port
Part Status: Active
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+280.32 грн
Мінімальне замовлення: 1500
KP235XTMA1 KP235_DS_Rev_1.0.pdf?folderId=db3a30431d8a6b3c011dd8fc5a954267&fileId=db3a30432ad629a6012af67ba47c0b0f
KP235XTMA1
Виробник: Infineon Technologies
Description: SENSOR 16.68PSIA 4.5V DSOF8-16
Packaging: Tape & Reel (TR)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 5.8PSI ~ 16.68PSI (40kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.348PSI (±2.4kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Port Style: No Port
Maximum Pressure: 21.76PSI (150kPa)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+241.28 грн
3000+ 224.34 грн
Мінімальне замовлення: 1500
KP236XTMA1 Infineon-KP236-DS-v01_00-en.pdf?fileId=db3a30432ad629a6012af67dbdc20b14
KP236XTMA1
Виробник: Infineon Technologies
Description: SENSOR 16.68PSIA 4.5V DSOF8-16
Packaging: Tape & Reel (TR)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 5.8PSI ~ 16.68PSI (40kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.29PSI (±2kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Port Style: No Port
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+205.94 грн
Мінімальне замовлення: 1500
KP236N6165XTMA2 KP236N6165_DS_Rev_1.0.pdf?folderId=db3a30431d8a6b3c011dd8fc5a954267&fileId=db3a30432ad629a6012af68133600b1a
KP236N6165XTMA2
Виробник: Infineon Technologies
Description: IC ANLG BAROMETRIC SNSR DSOF8-16
товар відсутній
PTFA220081MV4XUMA1 ptfa220081m-v4_ds_05.pdf?folderId=db3a304312fcb1bc01131b00814e17cf&fileId=db3a3043271faefd0127b603d2543329
Виробник: Infineon Technologies
Description: FET RF LDMOS 8W SON10
товар відсутній
PTFA220121MV4XUMA1 ptfa220121m-v4_ds_08.pdf?folderId=db3a304312fcb1bc01131b00814e17cf&fileId=db3a3043243b5f170124722c0b341900
Виробник: Infineon Technologies
Description: FET RF LDMOS 10W SON10
товар відсутній
PTMA180402FL V1 R250 ptma180402efl-v1_ds_08.pdf?folderId=db3a304312fcb1bc01131b00814e17cf&fileId=db3a304317a7483601183a5310e6580d
Виробник: Infineon Technologies
Description: IC AMP RF LDMOS 40W H34265-8
товар відсутній
SN7002N H6327 SN7002N_Rev2.6_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f6860601311934e76045d5
SN7002N H6327
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 200MA SOT23
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
PTFA070601FV4XWSA1 PTFA070601E,F.pdf
PTFA070601FV4XWSA1
Виробник: Infineon Technologies
Description: FET RF LDMOS 60W H37265-2
товар відсутній
PTFA071701FV4XWSA1 ptfa077101ef-v4_ds_rev03.pdf?folderId=db3a304412b407950112b4095d3b01ef&fileId=db3a304320d39d5901215d514b0e273d
PTFA071701FV4XWSA1
Виробник: Infineon Technologies
Description: FET RF LDMOS 170W H37248-2
товар відсутній
PTFB191501FV1XWSA1 PTFB191501E-F+V1+Datasheet+Rev02.pdf?folderId=db3a304312fcb1bc01131b00814e17cf&fileId=db3a30432313ff5e0123a472bfdd277f
PTFB191501FV1XWSA1
Виробник: Infineon Technologies
Description: FET RF LDMOS 150W H37248-2
товар відсутній
PTFB210801FAV1XWSA1 ptfb210801fa_ds_01.pdf?folderId=db3a304312fcb1bc01131b00814e17cf&fileId=db3a30433072cd8f0130beef05e41d24
PTFB210801FAV1XWSA1
Виробник: Infineon Technologies
Description: FET RF LDMOS 80W H37265-2
товар відсутній
PTFB211501FV1XWSA1
PTFB211501FV1XWSA1
Виробник: Infineon Technologies
Description: FET FR LDMOS 150W H37248-2
товар відсутній
PTFA041501FV4XWSA1 PTFA041501E,F.pdf
PTFA041501FV4XWSA1
Виробник: Infineon Technologies
Description: FET RF LDMOS 150W H37248-2
товар відсутній
BUZ30AHXKSA1 Buz30A+H+Rev+2.5.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a304325305e6d012596c75fb1290b
BUZ30AHXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 21A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
товар відсутній
BUZ31HXKSA1 BUZ31_H.pdf
BUZ31HXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 14.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 5V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
товар відсутній
BUZ31L H BUZ 31LH.pdf
BUZ31L H
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 13.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7A, 5V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
товар відсутній
BUZ73HXKSA1 BUZ73_H.pdf
BUZ73HXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 7A TO220-3
товар відсутній
BUZ73H3046XKSA1 BUZ73_H.pdf
BUZ73H3046XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
товар відсутній
BUZ73A H BUZ73A_H.pdf
BUZ73A H
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
товар відсутній
BUZ73A H3046 BUZ73A_H.pdf
BUZ73A H3046
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
товар відсутній
BUZ73ALHXKSA1 BUZ73AL_H.pdf
BUZ73ALHXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 5V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
товар відсутній
BUZ73LHXKSA1
BUZ73LHXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 7A TO220-3
товар відсутній
ICE2PCS06HKLA1 ProductDatasheetICE2PCS06_v1.1+Mar2010.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a3043327f13e3013285ff4ecb2e77
ICE2PCS06HKLA1
Виробник: Infineon Technologies
Description: IC PFC CTRLR CCM 70KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 26V
Frequency - Switching: 58kHz ~ 70kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DIP-8
Current - Startup: 450 µA
товар відсутній
ICLS6021JXKLA1 Data_Sheet_ICLS6x_Series.pdf?folderId=db3a304316f66ee801178c31a9af054a&fileId=db3a304330f686060131193d603545dd
ICLS6021JXKLA1
Виробник: Infineon Technologies
Description: IC LED DRIVER OFFLINE DIM 8DIP
товар відсутній
ICLS6022JXKLA1 Data_Sheet_ICLS6x_Series.pdf?folderId=db3a304316f66ee801178c31a9af054a&fileId=db3a304330f686060131193d603545dd
ICLS6022JXKLA1
Виробник: Infineon Technologies
Description: IC LED DRIVER OFFLINE DIM 8DIP
товар відсутній
ICLS6023JXKLA1 Data_Sheet_ICLS6x_Series.pdf?folderId=db3a304316f66ee801178c31a9af054a&fileId=db3a304330f686060131193d603545dd
ICLS6023JXKLA1
Виробник: Infineon Technologies
Description: IC LED DRIVER OFFLINE DIM 8DIP
товар відсутній
ICLS8023ZXKLA1 Data_Sheet_ICLS8023Z_800V_variant.pdf?folderId=db3a304316f66ee801178c31a9af054a&fileId=db3a3043321e499401324878d06724a2
ICLS8023ZXKLA1
Виробник: Infineon Technologies
Description: IC LED DRIVER OFFLINE DIM 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Number of Outputs: 1
Frequency: 65kHz
Type: AC DC Offline Switcher
Operating Temperature: -25°C ~ 130°C (TJ)
Internal Switch(s): Yes
Topology: Flyback
Supplier Device Package: PG-DIP-7-1
Dimming: PWM
Voltage - Supply (Min): 10.5V
Voltage - Supply (Max): 25V
Part Status: Obsolete
товар відсутній
IDY10S120XKSA1 IDY10S120.pdf
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 1.2KV 5A TO247HC
товар відсутній
IDY15S120XKSA1 IDY15S120.pdf
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 1.2KV 7.5A TO247
товар відсутній
IGA30N60H3XKSA1 IGA30N60H3.pdf
IGA30N60H3XKSA1
Виробник: Infineon Technologies
Description: IGBT 600V 18A 43W TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 43 W
товар відсутній
IGW20N60H3FKSA1 IGW20N60H3_Rev1_1G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30432a40a650012a46c4621a2b81
IGW20N60H3FKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/194ns
Switching Energy: 800µJ
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
на замовлення 241 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+200.68 грн
30+ 155.04 грн
120+ 127.56 грн
Мінімальне замовлення: 2
IGW30N60H3FKSA1 INFNS30182-1.pdf?t.download=true&u=5oefqw
IGW30N60H3FKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/207ns
Switching Energy: 1.38mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
на замовлення 1655 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+208.31 грн
30+ 159.1 грн
120+ 136.36 грн
510+ 113.75 грн
1020+ 97.4 грн
Мінімальне замовлення: 2
IHW20N135R3FKSA1 DS_IHW20N135R3.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433162923a0131897157e40e46
IHW20N135R3FKSA1
Виробник: Infineon Technologies
Description: IGBT 1350V 20A 310W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/335ns
Switching Energy: 1.3mJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 195 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 310 W
товар відсутній
IHW30N110R3FKSA1 DS_IHW30N110R3_1_2.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304327b897500127b963455e0089
IHW30N110R3FKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 1100V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/350ns
Switching Energy: 1.15mJ (off)
Test Condition: 600V, 30A, 15Ohm, 15V
Gate Charge: 180 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1100 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 333 W
товар відсутній
IHY20N135R3XKSA1 IHY20N135R3.pdf
Виробник: Infineon Technologies
Description: IGBT 1350V 40A 310W TO247HC-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: PG-TO247HC-3
IGBT Type: Trench
Td (on/off) @ 25°C: -/335ns
Switching Energy: 1.3mJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 195 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 310 W
товар відсутній
IHY30N160R2XKSA1 IHY30N160R2.pdf
Виробник: Infineon Technologies
Description: IGBT 1600V 30A 312W TO247HC-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO247HC-3
IGBT Type: NPT
Td (on/off) @ 25°C: -/525ns
Switching Energy: 2.53mJ
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 312 W
товар відсутній
IKW20N60TAFKSA1 IGBT%20Selection%20Guide.pdf
IKW20N60TAFKSA1
Виробник: Infineon Technologies
Description: IGBT 600V 40A 166W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 770µJ
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 166 W
товар відсутній
IKW30N60TAFKSA1 IKW30N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42889a63e1d
IKW30N60TAFKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH/FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-21
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
товар відсутній
IKW50N60H3FKSA1 IKW50N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432a40a650012a47934b1e2bea
IKW50N60H3FKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/235ns
Switching Energy: 2.36mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 333 W
на замовлення 425 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+459.35 грн
30+ 350.64 грн
120+ 300.54 грн
IPA057N06N3GXKSA1 IPA057N06N3_Rev2+0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a3043284aacd8012882b3ac145428
IPA057N06N3GXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 60A TO220-3-31
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 60A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 58µA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V
товар відсутній
IPA093N06N3GXKSA1 IPA093N06N3_Rev2+0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a3043284aacd8012882bf84115438
IPA093N06N3GXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 43A TO220-3-31
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO220-3-31
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
товар відсутній
IPA65R110CFDXKSA1 Infineon-IPX65R110CFD-DS-v02_06-en.pdf?fileId=db3a30433004641301306abd8e2041b1
IPA65R110CFDXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 31.2A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
товар відсутній
IPA65R190C6XKSA1 IPx65R190C6.pdf
IPA65R190C6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 20.2A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO220-3-111
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
товар відсутній
IPA65R190E6XKSA1 IPA65R190E6_2_0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30433004641301300747ef313b6b
IPA65R190E6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 20.2A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO220-3-111
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
товар відсутній
IPA65R310CFDXKSA1 IPP65R310CFD_2_2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432f91014f012f9caff105741c
IPA65R310CFDXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11.4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Supplier Device Package: PG-TO220-3-111
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
товар відсутній
IPA65R380C6XKSA1 IPA65R380C6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432ba3fa6f012bf2a58f67779f
IPA65R380C6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 10.6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-3-111
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
товар відсутній
IPA65R420CFDXKSA1 IPx65R420CFD.pdf
IPA65R420CFDXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO220
товар відсутній
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