IPA65R600C6XKSA1 Infineon Technologies
на замовлення 467 шт:
термін постачання 21-30 дні (днів)
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Технічний опис IPA65R600C6XKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V, Power Dissipation (Max): 28W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 210µA, Supplier Device Package: PG-TO220-3-111, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V.
Інші пропозиції IPA65R600C6XKSA1
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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IPA65R600C6XKSA1 | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 700V 7.3A 3-Pin(3+Tab) TO-220FP Tube |
товар відсутній |
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IPA65R600C6XKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 28W; TO220FP Technology: CoolMOS™ Case: TO220FP Mounting: THT On-state resistance: 0.6Ω Kind of package: tube Power dissipation: 28W Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Polarisation: unipolar Drain current: 7.3A кількість в упаковці: 1 шт |
товар відсутній |
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IPA65R600C6XKSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 650V 7.3A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 210µA Supplier Device Package: PG-TO220-3-111 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V |
товар відсутній |
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IPA65R600C6XKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 28W; TO220FP Technology: CoolMOS™ Case: TO220FP Mounting: THT On-state resistance: 0.6Ω Kind of package: tube Power dissipation: 28W Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Polarisation: unipolar Drain current: 7.3A |
товар відсутній |