Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5702) > Сторінка 21 з 96
Фото | Назва | Виробник | Інформація |
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S85M | GeneSiC Semiconductor |
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S85MR | GeneSiC Semiconductor |
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S85V | GeneSiC Semiconductor |
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S85VR | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 85A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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S85Y | GeneSiC Semiconductor |
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S85YR | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 85A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
на замовлення 223 шт: термін постачання 21-31 дні (днів) |
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SD51 | GeneSiC Semiconductor |
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SD51R | GeneSiC Semiconductor |
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W005M | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOM Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
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W01M | GeneSiC Semiconductor |
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W02M | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOM Part Status: Obsolete Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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W04M | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOM Part Status: Obsolete Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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W06M | GeneSiC Semiconductor |
![]() ![]() Packaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOM Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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W08M | GeneSiC Semiconductor |
![]() ![]() Packaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOM Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
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W10M | GeneSiC Semiconductor |
![]() ![]() Packaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOM Part Status: Obsolete Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
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GA50JT17-247 | GeneSiC Semiconductor |
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GA03IDDJT30-FR4 | GeneSiC Semiconductor |
![]() Packaging: Bulk Function: Gate Driver Type: Power Management Supplied Contents: Board(s) Primary Attributes: Isolated |
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GA15IDDJT22-FR4 | GeneSiC Semiconductor |
Description: BOARD GATE DRIVER Packaging: Bulk Function: Gate Driver Type: Power Management Supplied Contents: Board(s) Primary Attributes: Isolated |
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GA100SBJT12-FR4 | GeneSiC Semiconductor |
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на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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GA05JT01-46 | GeneSiC Semiconductor |
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на замовлення 94 шт: термін постачання 21-31 дні (днів) |
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GA05JT03-46 | GeneSiC Semiconductor |
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на замовлення 67 шт: термін постачання 21-31 дні (днів) |
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GA50JT06-258 | GeneSiC Semiconductor |
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GB02SHT01-46 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 76pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-46 Operating Temperature - Junction: -55°C ~ 210°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 57 шт: термін постачання 21-31 дні (днів) |
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GB02SHT03-46 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 76pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-46 Operating Temperature - Junction: -55°C ~ 225°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
на замовлення 47 шт: термін постачання 21-31 дні (днів) |
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GB02SHT06-46 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 76pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-46 Operating Temperature - Junction: -55°C ~ 225°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
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GAP05SLT80-220 | GeneSiC Semiconductor |
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на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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GA01PNS150-220 | GeneSiC Semiconductor |
![]() Packaging: Tube Package / Case: Axial Diode Type: PIN - Single Operating Temperature: -55°C ~ 175°C (TJ) Capacitance @ Vr, F: 7pF @ 1000V, 1MHz Voltage - Peak Reverse (Max): 15000V Part Status: Active Current - Max: 1 A |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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GA01PNS80-220 | GeneSiC Semiconductor |
![]() Packaging: Tube Package / Case: Axial Diode Type: PIN - Single Operating Temperature: -55°C ~ 175°C (TJ) Capacitance @ Vr, F: 4pF @ 1000V, 1MHz Voltage - Peak Reverse (Max): 8000V Current - Max: 2 A |
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GB02SLT12-252 | GeneSiC Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 131pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
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MBR2X030A045 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
на замовлення 39 шт: термін постачання 21-31 дні (днів) |
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MBR2X030A100 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A Current - Reverse Leakage @ Vr: 1 mA @ 100 V |
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MBR2X050A200 | GeneSiC Semiconductor |
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на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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MBR2X060A045 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
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MBR2X080A045 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 80A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 80 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
на замовлення 29 шт: термін постачання 21-31 дні (днів) |
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MBR2X080A100 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 80A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A Current - Reverse Leakage @ Vr: 1 mA @ 100 V |
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MBR2X100A180 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 180 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A Current - Reverse Leakage @ Vr: 3 mA @ 180 V |
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MBR2X120A045 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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MUR2X030A02 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
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MUR2X030A06 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
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MUR2X030A10 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 1000 V |
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MUR2X030A12 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 1200 V |
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MUR2X060A02 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 60 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
на замовлення 135 шт: термін постачання 21-31 дні (днів) |
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MUR2X060A04 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V |
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MUR2X060A06 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
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MUR2X100A02 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
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MUR2X100A04 | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V |
на замовлення 21 шт: термін постачання 21-31 дні (днів) |
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GBPC2504W | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 1249 шт: термін постачання 21-31 дні (днів) |
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GBPC2508W | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.2 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 1470 шт: термін постачання 21-31 дні (днів) |
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GBPC3504W | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 1853 шт: термін постачання 21-31 дні (днів) |
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GBPC3508W | GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 1445 шт: термін постачання 21-31 дні (днів) |
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FST100150 | GeneSiC Semiconductor |
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FST100200 | GeneSiC Semiconductor |
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FST120150 | GeneSiC Semiconductor |
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FST120200 | GeneSiC Semiconductor |
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FST160150 | GeneSiC Semiconductor |
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FST160200 | GeneSiC Semiconductor |
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FST16020L | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 20V 80A TO249AB |
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FST16030L | GeneSiC Semiconductor |
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FST16035L | GeneSiC Semiconductor |
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FST16040L | GeneSiC Semiconductor |
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S85VR |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 1.4KV 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP REV 1.4KV 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1161.74 грн |
10+ | 941.39 грн |
25+ | 887.12 грн |
S85YR |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 1.6KV 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP REV 1.6KV 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 223 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1093.31 грн |
10+ | 886.48 грн |
25+ | 827.88 грн |
100+ | 700.62 грн |
W005M |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
W02M |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
W04M |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
W06M | ![]() |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
W08M | ![]() |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
W10M | ![]() |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
GA03IDDJT30-FR4 |
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Виробник: GeneSiC Semiconductor
Description: BOARD GATE DRIVER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Supplied Contents: Board(s)
Primary Attributes: Isolated
Description: BOARD GATE DRIVER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Supplied Contents: Board(s)
Primary Attributes: Isolated
товар відсутній
GA15IDDJT22-FR4 |
Виробник: GeneSiC Semiconductor
Description: BOARD GATE DRIVER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Supplied Contents: Board(s)
Primary Attributes: Isolated
Description: BOARD GATE DRIVER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Supplied Contents: Board(s)
Primary Attributes: Isolated
товар відсутній
GA100SBJT12-FR4 |
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Виробник: GeneSiC Semiconductor
Description: BOARD EVAL DBL PULSE
Description: BOARD EVAL DBL PULSE
на замовлення 2 шт:
термін постачання 21-31 дні (днів)GA05JT01-46 |
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Виробник: GeneSiC Semiconductor
Description: TRANS SJT 100V 9A
Description: TRANS SJT 100V 9A
на замовлення 94 шт:
термін постачання 21-31 дні (днів)GA05JT03-46 |
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Виробник: GeneSiC Semiconductor
Description: TRANS SJT 300V 9A
Description: TRANS SJT 300V 9A
на замовлення 67 шт:
термін постачання 21-31 дні (днів)GB02SHT01-46 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 100V 4A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 210°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE SIL CARBIDE 100V 4A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 210°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 57 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3118.76 грн |
GB02SHT03-46 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 300V 4A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 225°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE SIL CARBIDE 300V 4A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 225°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
на замовлення 47 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3384.87 грн |
10+ | 2904.34 грн |
GB02SHT06-46 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 600V 4A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 225°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE SIL CARBIDE 600V 4A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 225°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
GAP05SLT80-220 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 8KV 50MA AXIAL
Description: DIODE SCHOTTKY 8KV 50MA AXIAL
на замовлення 9 шт:
термін постачання 21-31 дні (днів)GA01PNS150-220 |
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Виробник: GeneSiC Semiconductor
Description: RF DIODE PIN 15000V
Packaging: Tube
Package / Case: Axial
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 7pF @ 1000V, 1MHz
Voltage - Peak Reverse (Max): 15000V
Part Status: Active
Current - Max: 1 A
Description: RF DIODE PIN 15000V
Packaging: Tube
Package / Case: Axial
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 7pF @ 1000V, 1MHz
Voltage - Peak Reverse (Max): 15000V
Part Status: Active
Current - Max: 1 A
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 34133.77 грн |
GA01PNS80-220 |
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Виробник: GeneSiC Semiconductor
Description: RF DIODE PIN 8000V
Packaging: Tube
Package / Case: Axial
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 4pF @ 1000V, 1MHz
Voltage - Peak Reverse (Max): 8000V
Current - Max: 2 A
Description: RF DIODE PIN 8000V
Packaging: Tube
Package / Case: Axial
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 4pF @ 1000V, 1MHz
Voltage - Peak Reverse (Max): 8000V
Current - Max: 2 A
товар відсутній
GB02SLT12-252 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 1.2KV 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 131pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE SIL CARBIDE 1.2KV 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 131pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
товар відсутній
MBR2X030A045 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE MOD SCHOTT 45V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
на замовлення 39 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3174.26 грн |
10+ | 2628.54 грн |
25+ | 2475.38 грн |
MBR2X030A100 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 100V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Description: DIODE MOD SCHOTT 100V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
товар відсутній
MBR2X050A200 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 100A SOT227
Description: DIODE SCHOTTKY 200V 100A SOT227
на замовлення 20 шт:
термін постачання 21-31 дні (днів)MBR2X060A045 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE MOD SCHOTT 45V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
товар відсутній
MBR2X080A045 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE MOD SCHOTT 45V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3766.54 грн |
10+ | 3147.48 грн |
25+ | 2974.7 грн |
MBR2X080A100 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 100V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Description: DIODE MOD SCHOTT 100V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
товар відсутній
MBR2X100A180 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 180V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 180 V
Description: DIODE MOD SCHOT 180V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 180 V
товар відсутній
MBR2X120A045 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE MOD SCHOTT 45V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4047.85 грн |
MUR2X030A02 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE MODULE GP 200V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
товар відсутній
MUR2X030A06 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MODULE GP 600V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товар відсутній
MUR2X030A10 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 1000V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
Description: DIODE MODULE GP 1000V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
товар відсутній
MUR2X030A12 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
товар відсутній
MUR2X060A02 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE MODULE GP 200V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
на замовлення 135 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3340.77 грн |
10+ | 2772.26 грн |
25+ | 2612.78 грн |
50+ | 2344.56 грн |
100+ | 2241.79 грн |
MUR2X060A04 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Description: DIODE MODULE GP 400V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
товар відсутній
MUR2X060A06 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MODULE GP 600V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товар відсутній
MUR2X100A02 |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE GEN PURP 200V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
товар відсутній
MUR2X100A04 |
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Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Description: DIODE GEN PURP 400V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
на замовлення 21 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3968.78 грн |
10+ | 3440.05 грн |
GBPC2504W |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1P 400V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 1249 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 298.8 грн |
10+ | 228.94 грн |
25+ | 209.07 грн |
100+ | 170.93 грн |
250+ | 156.07 грн |
500+ | 145.65 грн |
1000+ | 133.71 грн |
GBPC2508W |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1P 800V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 1470 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 298.04 грн |
10+ | 228.06 грн |
25+ | 208.22 грн |
100+ | 170.24 грн |
250+ | 155.44 грн |
500+ | 145.06 грн |
1000+ | 133.16 грн |
GBPC3504W |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1P 400V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 1853 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 323.13 грн |
10+ | 249.66 грн |
25+ | 228.75 грн |
100+ | 188.12 грн |
250+ | 172.38 грн |
500+ | 161.38 грн |
1000+ | 148.54 грн |
GBPC3508W |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1P 800V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 1445 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 323.13 грн |
10+ | 249.66 грн |
25+ | 228.75 грн |
100+ | 188.12 грн |
250+ | 172.38 грн |
500+ | 161.38 грн |
1000+ | 148.54 грн |
FST100150 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 50A TO249AB
Description: DIODE SCHOTTKY 150V 50A TO249AB
товар відсутній
FST100200 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 50A TO249AB
Description: DIODE SCHOTTKY 200V 50A TO249AB
товар відсутній
FST120150 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 60A TO249AB
Description: DIODE SCHOTTKY 150V 60A TO249AB
товар відсутній
FST120200 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 60A TO249AB
Description: DIODE SCHOTTKY 200V 60A TO249AB
товар відсутній
FST160150 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 80A TO249AB
Description: DIODE SCHOTTKY 150V 80A TO249AB
товар відсутній
FST160200 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 80A TO249AB
Description: DIODE SCHOTTKY 200V 80A TO249AB
товар відсутній
FST16020L |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 80A TO249AB
Description: DIODE SCHOTTKY 20V 80A TO249AB
товар відсутній
FST16030L |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 80A TO249AB
Description: DIODE SCHOTTKY 30V 80A TO249AB
товар відсутній
FST16035L |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 80A TO249AB
Description: DIODE SCHOTTKY 35V 80A TO249AB
товар відсутній
FST16040L |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 80A TO249AB
Description: DIODE SCHOTTKY 40V 80A TO249AB
товар відсутній