Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5702) > Сторінка 24 з 96
| Фото | Назва | Виробник | Інформація |
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MBR60040CTRL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 40V 300A 2 TOWER |
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MBR60045CTL | GeneSiC Semiconductor |
 Description: DIODE SCHOTTKY 45V 300A 2 TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 300 A Current - Reverse Leakage @ Vr: 5 mA @ 45 V |
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MBR60045CTRL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 300A 2 TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 300 A Current - Reverse Leakage @ Vr: 5 mA @ 45 V |
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MBRH120150 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 120A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 120A Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 120 A Current - Reverse Leakage @ Vr: 1 mA @ 150 V |
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MBRH120150R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 120A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 120A Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 120 A Current - Reverse Leakage @ Vr: 1 mA @ 150 V |
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MBRH120200 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 120A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 120A Supplier Device Package: D-67 Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 120 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
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MBRH120200R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 120A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 120A Supplier Device Package: D-67 Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 120 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
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MBRH15020L | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 20V 150A D-67 |
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MBRH15020RL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 20V 150A D-67 |
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MBRH15030L | GeneSiC Semiconductor |
Description: DIODE MODULE 30V 150A D-67 |
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MBRH15030RL | GeneSiC Semiconductor |
Description: DIODE MODULE 30V 150A D-67 |
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MBRH15035L | GeneSiC Semiconductor |
Description: DIODE MODULE 35V 150A D-67 |
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MBRH15035RL | GeneSiC Semiconductor |
Description: DIODE MODULE 35V 150A D-67 |
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MBRH15040L | GeneSiC Semiconductor |
Description: DIODE MODULE 40V 150A D-67 |
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MBRH15040RL | GeneSiC Semiconductor |
Description: DIODE MODULE 40V 150A D-67 |
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MBRH15045L | GeneSiC Semiconductor |
Description: DIODE MODULE 45V 150A D-67 |
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MBRH15045RL | GeneSiC Semiconductor |
Description: DIODE MODULE 45V 150A D-67 |
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MBRH200150 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 200A D-67 |
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MBRH200150R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 200A D-67 |
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MBRH200200 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 200A D-67 |
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MBRH200200R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 200A D-67 |
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MBRH20020L | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 20V 200A D-67 |
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MBRH20020RL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 20V 200A D-67 |
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MBRH20030L | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 30V 200A D-67 |
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MBRH20030RL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 30V 200A D-67 |
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MBRH20035L | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 35V 200A D-67 |
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MBRH20035RL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 35V 200A D-67 |
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MBRH20040L | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 40V 200A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 200A Supplier Device Package: D-67 Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 A Current - Reverse Leakage @ Vr: 5 mA @ 40 V |
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MBRH20040RL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY REV 40V 200A D-67 Packaging: Bulk Package / Case: D-67 HALF-PAK Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 200A Supplier Device Package: D-67 Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 A Current - Reverse Leakage @ Vr: 5 mA @ 40 V |
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MBRH20045L | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 45V 200A D-67 |
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MBRH20045RL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 45V 200A D-67 |
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MBRT120150 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 150V 60A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 150 V |
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MBRT120150R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 150V 60A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 150 V |
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MBRT120200 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 200V 60A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
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MBRT120200R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 200V 60A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
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MBRT200150 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 150V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 150 V |
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MBRT200150R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 150V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 150 V |
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MBRT200200 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 200V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
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MBRT200200R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 200V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
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MBRT300150 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 150A 3 TOWER |
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MBRT300150R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 150A 3 TOWER |
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MBRT300200 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 150A 3 TOWER |
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MBRT300200R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 150A 3 TOWER |
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MBRT30020L | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 20V 150A 3 TOWER |
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MBRT30020RL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 20V 150A 3 TOWER |
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MBRT30030L | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 30V 150A 3 TOWER |
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MBRT30030RL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 30V 150A 3 TOWER |
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MBRT30035L | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 35V 150A 3 TOWER |
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MBRT30035RL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 35V 150A 3 TOWER |
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MBRT30040L | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 40V 150A 3 TOWER |
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MBRT30040RL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 40V 150A 3 TOWER |
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MBRT30045L | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 150A 3 TOWER |
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MBRT30045RL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 150A 3 TOWER |
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MBRT400150 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 200A 3 TOWER |
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MBRT400150R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 200A 3 TOWER |
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MBRT400200 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 200A 3 TOWER |
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MBRT400200R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 200A 3 TOWER |
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MBRT40020L | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 20V 200A 3 TOWER |
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MBRT40020RL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 20V 200A 3 TOWER |
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MBRT40030L | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 30V 200A 3 TOWER |
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| MBR60040CTRL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 300A 2 TOWER
Description: DIODE SCHOTTKY 40V 300A 2 TOWER
товар відсутній
| MBR60045CTL |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 300A 2 TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Description: DIODE SCHOTTKY 45V 300A 2 TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
товар відсутній
| MBR60045CTRL |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 300A 2 TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Description: DIODE SCHOTTKY 45V 300A 2 TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
товар відсутній
| MBRH120150 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Description: DIODE SCHOTTKY 150V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
товар відсутній
| MBRH120150R |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Description: DIODE SCHOTTKY 150V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
товар відсутній
| MBRH120200 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE SCHOTTKY 200V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
товар відсутній
| MBRH120200R |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE SCHOTTKY 200V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
товар відсутній
| MBRH15020RL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 150A D-67
Description: DIODE SCHOTTKY 20V 150A D-67
товар відсутній
| MBRH200150 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 200A D-67
Description: DIODE SCHOTTKY 150V 200A D-67
товар відсутній
| MBRH200150R |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 200A D-67
Description: DIODE SCHOTTKY 200V 200A D-67
товар відсутній
| MBRH200200 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 200A D-67
Description: DIODE SCHOTTKY 200V 200A D-67
товар відсутній
| MBRH200200R |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 200A D-67
Description: DIODE SCHOTTKY 200V 200A D-67
товар відсутній
| MBRH20020RL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 200A D-67
Description: DIODE SCHOTTKY 20V 200A D-67
товар відсутній
| MBRH20030RL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 200A D-67
Description: DIODE SCHOTTKY 30V 200A D-67
товар відсутній
| MBRH20035RL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 200A D-67
Description: DIODE SCHOTTKY 35V 200A D-67
товар відсутній
| MBRH20040L |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 200A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 200A
Supplier Device Package: D-67
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 40 V
Description: DIODE SCHOTTKY 40V 200A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 200A
Supplier Device Package: D-67
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 40 V
товар відсутній
| MBRH20040RL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 40V 200A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 200A
Supplier Device Package: D-67
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 40 V
Description: DIODE SCHOTTKY REV 40V 200A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 200A
Supplier Device Package: D-67
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 40 V
товар відсутній
| MBRH20045RL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 200A D-67
Description: DIODE SCHOTTKY 45V 200A D-67
товар відсутній
| MBRT120150 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 150V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Description: DIODE MOD SCHOTT 150V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
товар відсутній
| MBRT120150R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 150V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Description: DIODE MOD SCHOTT 150V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
товар відсутній
| MBRT120200 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 200V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE MOD SCHOTT 200V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
товар відсутній
| MBRT120200R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 200V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE MOD SCHOTT 200V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
товар відсутній
| MBRT200150 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 150V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Description: DIODE MOD SCHOT 150V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
товар відсутній
| MBRT200150R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 150V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Description: DIODE MOD SCHOT 150V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
товар відсутній
| MBRT200200 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 200V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE MOD SCHOT 200V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
товар відсутній
| MBRT200200R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 200V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE MOD SCHOT 200V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
товар відсутній
| MBRT300150 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 150A 3 TOWER
Description: DIODE SCHOTTKY 150V 150A 3 TOWER
товар відсутній
| MBRT300150R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 150A 3 TOWER
Description: DIODE SCHOTTKY 150V 150A 3 TOWER
товар відсутній
| MBRT300200 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 150A 3 TOWER
Description: DIODE SCHOTTKY 200V 150A 3 TOWER
товар відсутній
| MBRT300200R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 150A 3 TOWER
Description: DIODE SCHOTTKY 200V 150A 3 TOWER
товар відсутній
| MBRT30020L |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 150A 3 TOWER
Description: DIODE SCHOTTKY 20V 150A 3 TOWER
товар відсутній
| MBRT30020RL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 150A 3 TOWER
Description: DIODE SCHOTTKY 20V 150A 3 TOWER
товар відсутній
| MBRT30030L |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 150A 3 TOWER
Description: DIODE SCHOTTKY 30V 150A 3 TOWER
товар відсутній
| MBRT30030RL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 150A 3 TOWER
Description: DIODE SCHOTTKY 30V 150A 3 TOWER
товар відсутній
| MBRT30035L |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 150A 3 TOWER
Description: DIODE SCHOTTKY 35V 150A 3 TOWER
товар відсутній
| MBRT30035RL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 150A 3 TOWER
Description: DIODE SCHOTTKY 35V 150A 3 TOWER
товар відсутній
| MBRT30040L |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 150A 3 TOWER
Description: DIODE SCHOTTKY 40V 150A 3 TOWER
товар відсутній
| MBRT30040RL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 150A 3 TOWER
Description: DIODE SCHOTTKY 40V 150A 3 TOWER
товар відсутній
| MBRT30045L |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 150A 3 TOWER
Description: DIODE SCHOTTKY 45V 150A 3 TOWER
товар відсутній
| MBRT30045RL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 150A 3 TOWER
Description: DIODE SCHOTTKY 45V 150A 3 TOWER
товар відсутній
| MBRT400150 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 200A 3 TOWER
Description: DIODE SCHOTTKY 150V 200A 3 TOWER
товар відсутній
| MBRT400150R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 200A 3 TOWER
Description: DIODE SCHOTTKY 150V 200A 3 TOWER
товар відсутній
| MBRT400200 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 200A 3 TOWER
Description: DIODE SCHOTTKY 200V 200A 3 TOWER
товар відсутній
| MBRT400200R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 200A 3 TOWER
Description: DIODE SCHOTTKY 200V 200A 3 TOWER
товар відсутній
| MBRT40020L |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 200A 3 TOWER
Description: DIODE SCHOTTKY 20V 200A 3 TOWER
товар відсутній
| MBRT40020RL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 200A 3 TOWER
Description: DIODE SCHOTTKY 20V 200A 3 TOWER
товар відсутній
| MBRT40030L |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 200A 3 TOWER
Description: DIODE SCHOTTKY 30V 200A 3 TOWER
товар відсутній