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MUR2X030A12 GeneSiC Semiconductor
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Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
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Технічний опис MUR2X030A12 GeneSiC Semiconductor
Description: DIODE MODULE GP 1200V 30A SOT227, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 85 ns, Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 30A, Supplier Device Package: SOT-227, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A, Current - Reverse Leakage @ Vr: 25 µA @ 1200 V.
Інші пропозиції MUR2X030A12
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MUR2X030A12 | Виробник : GeneSiC Semiconductor |
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