Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5727) > Сторінка 25 з 96
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MBRT40035RL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 35V 200A 3 TOWER |
товар відсутній |
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MBRT40040L | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 40V 200A 3 TOWER |
товар відсутній |
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MBRT40040RL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 40V 200A 3 TOWER |
товар відсутній |
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MBRT40045L | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 45V 200A 3 TOWER |
товар відсутній |
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MBRT40045RL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 45V 200A 3 TOWER |
товар відсутній |
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MBRT500150 | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 150V 250A 3 TOWER |
товар відсутній |
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MBRT500150R | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 150V 250A 3 TOWER |
товар відсутній |
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MBRT500200 | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 200V 250A 3 TOWER |
товар відсутній |
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MBRT500200R | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 200V 250A 3 TOWER |
товар відсутній |
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MBRT600150 | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 150V 300A 3 TOWER |
товар відсутній |
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MBRT600150R | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 150V 300A 3 TOWER |
товар відсутній |
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MBRT600200 | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 200V 300A 3 TOWER |
товар відсутній |
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MBRT600200R | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 200V 300A 3 TOWER |
товар відсутній |
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MBRT60020L | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 20V 300A 3 TOWER |
товар відсутній |
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MBRT60020RL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 20V 300A 3 TOWER |
товар відсутній |
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MBRT60030L | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 30V 300A 3 TOWER |
товар відсутній |
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MBRT60030RL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 30V 300A 3 TOWER |
товар відсутній |
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MBRT60035L | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 35V 300A 3 TOWER |
товар відсутній |
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MBRT60035RL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 35V 300A 3 TOWER |
товар відсутній |
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MBRT60040L | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 40V 300A 3 TOWER |
товар відсутній |
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MBRT60040RL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 40V 300A 3 TOWER |
товар відсутній |
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MBRT60045L | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 45V 300A 3 TOWER |
товар відсутній |
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MBRT60045RL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 45V 300A 3 TOWER |
товар відсутній |
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MSRT100100(A)D | GeneSiC Semiconductor | Description: DIODE GEN 1KV 100A 3 TOWER |
товар відсутній |
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MSRT100120(A)D | GeneSiC Semiconductor | Description: DIODE GEN 1.2KV 100A 3 TOWER |
товар відсутній |
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MSRT100140(A)D | GeneSiC Semiconductor | Description: DIODE GEN 1.4KV 100A 3 TOWER |
товар відсутній |
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MSRT100160(A)D | GeneSiC Semiconductor | Description: DIODE GEN 1.6KV 100A 3 TOWER |
товар відсутній |
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MSRT10060(A)D | GeneSiC Semiconductor | Description: DIODE GEN PURP 600V 100A 3 TOWER |
товар відсутній |
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MSRT10080(A)D | GeneSiC Semiconductor | Description: DIODE GEN PURP 800V 100A 3 TOWER |
товар відсутній |
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MSRT150100(A)D | GeneSiC Semiconductor | Description: DIODE GEN 1KV 150A 3 TOWER |
товар відсутній |
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MSRT150120(A)D | GeneSiC Semiconductor | Description: DIODE GEN 1.2KV 150A 3 TOWER |
товар відсутній |
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MSRT150140(A)D | GeneSiC Semiconductor | Description: DIODE GEN 1.4KV 150A 3 TOWER |
товар відсутній |
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MSRT150160(A)D | GeneSiC Semiconductor | Description: DIODE GEN 1.6KV 150A 3 TOWER |
товар відсутній |
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MSRT15060(A)D | GeneSiC Semiconductor | Description: DIODE GEN PURP 600V 150A 3 TOWER |
товар відсутній |
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MSRT15080(A)D | GeneSiC Semiconductor | Description: DIODE GEN PURP 800V 150A 3 TOWER |
товар відсутній |
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MSRT200100(A)D | GeneSiC Semiconductor | Description: DIODE GEN 1KV 200A 3 TOWER |
товар відсутній |
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MSRT200120(A)D | GeneSiC Semiconductor | Description: DIODE GEN 1.2KV 200A 3 TOWER |
товар відсутній |
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MSRT200140(A)D | GeneSiC Semiconductor | Description: DIODE GEN 1.4KV 200A 3 TOWER |
товар відсутній |
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MSRT200160(A)D | GeneSiC Semiconductor | Description: DIODE GEN 1.6KV 200A 3 TOWER |
товар відсутній |
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MSRT20060(A)D | GeneSiC Semiconductor | Description: DIODE GEN PURP 600V 200A 3 TOWER |
товар відсутній |
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MSRT20080(A)D | GeneSiC Semiconductor | Description: DIODE GEN PURP 800V 200A 3 TOWER |
товар відсутній |
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MSRTA200100(A)D | GeneSiC Semiconductor | Description: DIODE GEN 1KV 200A 3 TOWER |
товар відсутній |
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MSRTA200120(A)D | GeneSiC Semiconductor | Description: DIODE GEN 1.2KV 200A 3 TOWER |
товар відсутній |
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MSRTA200140(A)D | GeneSiC Semiconductor | Description: DIODE GEN 1.4KV 200A 3 TOWER |
товар відсутній |
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MSRTA200160(A)D | GeneSiC Semiconductor | Description: DIODE GEN 1.6KV 200A 3 TOWER |
товар відсутній |
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MSRTA20060(A)D | GeneSiC Semiconductor | Description: DIODE GEN PURP 600V 200A 3 TOWER |
товар відсутній |
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MSRTA20080(A)D | GeneSiC Semiconductor | Description: DIODE GEN PURP 800V 200A 3 TOWER |
товар відсутній |
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MSRTA30060(A)D | GeneSiC Semiconductor | Description: DIODE GEN PURP 600V 300A 3 TOWER |
товар відсутній |
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MSRTA30080(A)D | GeneSiC Semiconductor | Description: DIODE GEN PURP 800V 300A 3 TOWER |
товар відсутній |
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MUR2X030A04 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 400V 30A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V |
товар відсутній |
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MUR2X060A10 | GeneSiC Semiconductor | Description: DIODE GEN PURP 1KV 60A SOT227 |
товар відсутній |
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MUR2X060A12 | GeneSiC Semiconductor | Description: DIODE GEN PURP 1.2KV 60A SOT227 |
товар відсутній |
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MUR2X100A06 | GeneSiC Semiconductor | Description: DIODE GEN PURP 600V 100A SOT227 |
товар відсутній |
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MUR2X100A10 | GeneSiC Semiconductor | Description: DIODE GEN PURP 1KV 100A SOT227 |
товар відсутній |
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MUR2X100A12 | GeneSiC Semiconductor | Description: DIODE GEN PURP 1.2KV 100A SOT227 |
товар відсутній |
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MUR2X120A02 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 200V 120A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 120 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
товар відсутній |
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MUR2X120A04 | GeneSiC Semiconductor | Description: DIODE GEN PURP 400V 120A SOT227 |
товар відсутній |
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MUR2X120A06 | GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 120A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 120 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товар відсутній |
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MUR2X120A10 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 1KV 120A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 120 A Current - Reverse Leakage @ Vr: 25 µA @ 1000 V |
товар відсутній |
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MUR2X120A12 | GeneSiC Semiconductor | Description: DIODE GEN PURP 1.2KV 120A SOT227 |
товар відсутній |
MBRT40035RL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 200A 3 TOWER
Description: DIODE SCHOTTKY 35V 200A 3 TOWER
товар відсутній
MBRT40040L |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 200A 3 TOWER
Description: DIODE SCHOTTKY 40V 200A 3 TOWER
товар відсутній
MBRT40040RL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 200A 3 TOWER
Description: DIODE SCHOTTKY 40V 200A 3 TOWER
товар відсутній
MBRT40045L |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 200A 3 TOWER
Description: DIODE SCHOTTKY 45V 200A 3 TOWER
товар відсутній
MBRT40045RL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 200A 3 TOWER
Description: DIODE SCHOTTKY 45V 200A 3 TOWER
товар відсутній
MBRT500150 |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 250A 3 TOWER
Description: DIODE SCHOTTKY 150V 250A 3 TOWER
товар відсутній
MBRT500150R |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 250A 3 TOWER
Description: DIODE SCHOTTKY 150V 250A 3 TOWER
товар відсутній
MBRT500200 |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 250A 3 TOWER
Description: DIODE SCHOTTKY 200V 250A 3 TOWER
товар відсутній
MBRT500200R |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 250A 3 TOWER
Description: DIODE SCHOTTKY 200V 250A 3 TOWER
товар відсутній
MBRT600150 |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 300A 3 TOWER
Description: DIODE SCHOTTKY 150V 300A 3 TOWER
товар відсутній
MBRT600150R |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 300A 3 TOWER
Description: DIODE SCHOTTKY 150V 300A 3 TOWER
товар відсутній
MBRT600200 |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 300A 3 TOWER
Description: DIODE SCHOTTKY 200V 300A 3 TOWER
товар відсутній
MBRT600200R |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 300A 3 TOWER
Description: DIODE SCHOTTKY 200V 300A 3 TOWER
товар відсутній
MBRT60020L |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 300A 3 TOWER
Description: DIODE SCHOTTKY 20V 300A 3 TOWER
товар відсутній
MBRT60020RL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 300A 3 TOWER
Description: DIODE SCHOTTKY 20V 300A 3 TOWER
товар відсутній
MBRT60030L |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 300A 3 TOWER
Description: DIODE SCHOTTKY 30V 300A 3 TOWER
товар відсутній
MBRT60030RL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 300A 3 TOWER
Description: DIODE SCHOTTKY 30V 300A 3 TOWER
товар відсутній
MBRT60035L |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 300A 3 TOWER
Description: DIODE SCHOTTKY 35V 300A 3 TOWER
товар відсутній
MBRT60035RL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 300A 3 TOWER
Description: DIODE SCHOTTKY 35V 300A 3 TOWER
товар відсутній
MBRT60040L |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 300A 3 TOWER
Description: DIODE SCHOTTKY 40V 300A 3 TOWER
товар відсутній
MBRT60040RL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 300A 3 TOWER
Description: DIODE SCHOTTKY 40V 300A 3 TOWER
товар відсутній
MBRT60045L |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 300A 3 TOWER
Description: DIODE SCHOTTKY 45V 300A 3 TOWER
товар відсутній
MBRT60045RL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 300A 3 TOWER
Description: DIODE SCHOTTKY 45V 300A 3 TOWER
товар відсутній
MSRT100100(A)D |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1KV 100A 3 TOWER
Description: DIODE GEN 1KV 100A 3 TOWER
товар відсутній
MSRT100120(A)D |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1.2KV 100A 3 TOWER
Description: DIODE GEN 1.2KV 100A 3 TOWER
товар відсутній
MSRT100140(A)D |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1.4KV 100A 3 TOWER
Description: DIODE GEN 1.4KV 100A 3 TOWER
товар відсутній
MSRT100160(A)D |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1.6KV 100A 3 TOWER
Description: DIODE GEN 1.6KV 100A 3 TOWER
товар відсутній
MSRT10060(A)D |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 100A 3 TOWER
Description: DIODE GEN PURP 600V 100A 3 TOWER
товар відсутній
MSRT10080(A)D |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 100A 3 TOWER
Description: DIODE GEN PURP 800V 100A 3 TOWER
товар відсутній
MSRT150100(A)D |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1KV 150A 3 TOWER
Description: DIODE GEN 1KV 150A 3 TOWER
товар відсутній
MSRT150120(A)D |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1.2KV 150A 3 TOWER
Description: DIODE GEN 1.2KV 150A 3 TOWER
товар відсутній
MSRT150140(A)D |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1.4KV 150A 3 TOWER
Description: DIODE GEN 1.4KV 150A 3 TOWER
товар відсутній
MSRT150160(A)D |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1.6KV 150A 3 TOWER
Description: DIODE GEN 1.6KV 150A 3 TOWER
товар відсутній
MSRT15060(A)D |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 150A 3 TOWER
Description: DIODE GEN PURP 600V 150A 3 TOWER
товар відсутній
MSRT15080(A)D |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 150A 3 TOWER
Description: DIODE GEN PURP 800V 150A 3 TOWER
товар відсутній
MSRT200100(A)D |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1KV 200A 3 TOWER
Description: DIODE GEN 1KV 200A 3 TOWER
товар відсутній
MSRT200120(A)D |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1.2KV 200A 3 TOWER
Description: DIODE GEN 1.2KV 200A 3 TOWER
товар відсутній
MSRT200140(A)D |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1.4KV 200A 3 TOWER
Description: DIODE GEN 1.4KV 200A 3 TOWER
товар відсутній
MSRT200160(A)D |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1.6KV 200A 3 TOWER
Description: DIODE GEN 1.6KV 200A 3 TOWER
товар відсутній
MSRT20060(A)D |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 200A 3 TOWER
Description: DIODE GEN PURP 600V 200A 3 TOWER
товар відсутній
MSRT20080(A)D |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 200A 3 TOWER
Description: DIODE GEN PURP 800V 200A 3 TOWER
товар відсутній
MSRTA200100(A)D |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1KV 200A 3 TOWER
Description: DIODE GEN 1KV 200A 3 TOWER
товар відсутній
MSRTA200120(A)D |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1.2KV 200A 3 TOWER
Description: DIODE GEN 1.2KV 200A 3 TOWER
товар відсутній
MSRTA200140(A)D |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1.4KV 200A 3 TOWER
Description: DIODE GEN 1.4KV 200A 3 TOWER
товар відсутній
MSRTA200160(A)D |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN 1.6KV 200A 3 TOWER
Description: DIODE GEN 1.6KV 200A 3 TOWER
товар відсутній
MSRTA20060(A)D |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 200A 3 TOWER
Description: DIODE GEN PURP 600V 200A 3 TOWER
товар відсутній
MSRTA20080(A)D |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 200A 3 TOWER
Description: DIODE GEN PURP 800V 200A 3 TOWER
товар відсутній
MSRTA30060(A)D |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 300A 3 TOWER
Description: DIODE GEN PURP 600V 300A 3 TOWER
товар відсутній
MSRTA30080(A)D |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 300A 3 TOWER
Description: DIODE GEN PURP 800V 300A 3 TOWER
товар відсутній
MUR2X030A04 |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Description: DIODE MODULE GP 400V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
товар відсутній
MUR2X060A10 |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1KV 60A SOT227
Description: DIODE GEN PURP 1KV 60A SOT227
товар відсутній
MUR2X060A12 |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.2KV 60A SOT227
Description: DIODE GEN PURP 1.2KV 60A SOT227
товар відсутній
MUR2X100A06 |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 100A SOT227
Description: DIODE GEN PURP 600V 100A SOT227
товар відсутній
MUR2X100A10 |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1KV 100A SOT227
Description: DIODE GEN PURP 1KV 100A SOT227
товар відсутній
MUR2X100A12 |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.2KV 100A SOT227
Description: DIODE GEN PURP 1.2KV 100A SOT227
товар відсутній
MUR2X120A02 |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 120 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE GEN PURP 200V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 120 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
товар відсутній
MUR2X120A04 |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 120A SOT227
Description: DIODE GEN PURP 400V 120A SOT227
товар відсутній
MUR2X120A06 |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 120 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE GEN PURP 600V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 120 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товар відсутній
MUR2X120A10 |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 1KV 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 120 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
Description: DIODE MODULE GP 1KV 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 120 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
товар відсутній
MUR2X120A12 |
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.2KV 120A SOT227
Description: DIODE GEN PURP 1.2KV 120A SOT227
товар відсутній