Технічний опис MUR2X030A10 GeneSiC Semiconductor
Description: DIODE MODULE GP 1000V 30A SOT227, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 85 ns, Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 30A, Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A, Current - Reverse Leakage @ Vr: 25 µA @ 1000 V.
Інші пропозиції MUR2X030A10
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MUR2X030A10 | Виробник : GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 1000 V |
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MUR2X030A10 | Виробник : GeneSiC Semiconductor |
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