Технічний опис MBR60045CTR GeneSiC Semiconductor
Description: DIODE MODULE 45V 300A 2TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 300A, Supplier Device Package: Twin Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 45 V, Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A, Current - Reverse Leakage @ Vr: 1 mA @ 20 V.
Інші пропозиції MBR60045CTR
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Ціна без ПДВ |
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MBR60045CTR | Виробник : GeneSiC Semiconductor |
 Description: DIODE MODULE 45V 300A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товар відсутній |
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MBR60045CTR | Виробник : GeneSiC Semiconductor |
Discrete Semiconductor Modules SI PWR SCHOTTKY 2TWR 20-100V 600A 45P/32 |
товар відсутній |