Технічний опис MBR20030CT MOTOROLA
Description: DIODE MOD SCHOTT 30V 200A 2TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 200A (DC), Supplier Device Package: Twin Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A, Current - Reverse Leakage @ Vr: 5 mA @ 20 V.
Інші пропозиції MBR20030CT
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MBR20030CT | Виробник : GeneSiC Semiconductor |
 Rectifier Diode Schottky 30V 200A 3-Pin Twin Tower |
товар відсутній |
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MBR20030CT | Виробник : GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 30V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товар відсутній |
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MBR20030CT | Виробник : GeneSiC Semiconductor |
Discrete Semiconductor Modules 30V 200A Schottky Recovery |
товар відсутній |