1N3889R GeneSiC Semiconductor

Description: DIODE GEN PURP REV 50V 12A DO4, Packaging: Bulk, Package / Case: DO-203AA, DO-4, Stud, Mounting Type: Chassis, Stud Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 200 ns, Technology: Standard, Reverse Polarity, Current - Average Rectified (Io): 12A, Supplier Device Package: DO-4, Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A, Current - Reverse Leakage @ Vr: 25 µA @ 50 V.