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ESDALD12BCX WeEn Semiconductors
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Category: Transil diodes - arrays
Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; SOD323; Ch: 1
Mounting: SMD
Manufacturer series: LD
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.35kW
Case: SOD323
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Max. forward impulse current: 10A
Breakdown voltage: 13.3V
Leakage current: 1µA
Number of channels: 1
Kind of package: reel; tape
кількість в упаковці: 90000 шт
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Технічний опис ESDALD12BCX WeEn Semiconductors
Category: Transil diodes - arrays, Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; SOD323; Ch: 1, Mounting: SMD, Manufacturer series: LD, Type of diode: TVS array, Features of semiconductor devices: ESD protection, Peak pulse power dissipation: 0.35kW, Case: SOD323, Max. off-state voltage: 12V, Semiconductor structure: bidirectional, Max. forward impulse current: 10A, Breakdown voltage: 13.3V, Leakage current: 1µA, Number of channels: 1, Kind of package: reel; tape, кількість в упаковці: 90000 шт.
Інші пропозиції ESDALD12BCX
Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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ESDALD12BCX | Виробник : WeEn Semiconductors |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.8pF @ 1MHz Current - Peak Pulse (10/1000µs): 10A Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: SOD-323 Bidirectional Channels: 1 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 35V Power Line Protection: No |
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ESDALD12BCX | Виробник : WeEn Semiconductors |
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товар відсутній |
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ESDALD12BCX | Виробник : WeEn Semiconductors |
![]() Description: Diode: TVS array; 13.3V; 10A; 350W; bidirectional; SOD323; Ch: 1 Mounting: SMD Manufacturer series: LD Type of diode: TVS array Features of semiconductor devices: ESD protection Peak pulse power dissipation: 0.35kW Case: SOD323 Max. off-state voltage: 12V Semiconductor structure: bidirectional Max. forward impulse current: 10A Breakdown voltage: 13.3V Leakage current: 1µA Number of channels: 1 Kind of package: reel; tape |
товар відсутній |